Our papers, both spearheaded by Vito, “ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation” and “Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide” have been accepted for publication in the Journal of Physical Chemistry A and in the IEEE Transactions on Electron Devices, respectively.
Our manuscript titled Using Graph Partitioning and Coloring for Flexible Coarse-Grained
Shared-Memory Parallel Mesh Adaptation has been accepted for presentation as a research note at the International Meshing Roundtable (IMR). The conference will take place September 18-21, 2017 in Barcelona, Spain.
Our manuscript titled Modeling and Simulation of Electrical Activation
of Acceptor-Type Dopants in Silicon Carbide has been accepted for presentation as a poster at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017. The conference will take place September 17-22, 2017 in Washington DC, USA.
Our papers entitled Accelerated Direct Flux Calculations
Using an Adaptively Refined Icosahedron and An Empirical Model for Electrical Activation of
Phosphorus and Nitrogen Implanted Silicon Carbide have been accepted for presentation at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). The conference will take place September 7-9, 2017 in Kamakura, Japan.
Our manuscript titled Evaluation of the Shared-Memory Parallel Fast Marching Method for
Re-Distancing Problems has been accepted for presentation as a PhD showcase at the International Conference on Computational Science and Its Applications (ICCSA) 2017. The conference will take place July 3-6, 2017 in Trieste, Italy.
Together with Karl Rupp, Patricio Farrell, and Nella Rotundo, we have co-organized the Mini-Symposium on Computational and Numerical Methods in Electronics at the SIAM CSE 2017 conference, one of the flagship Computational Science and Engineering conferences.
The goal of our Mini-Symposium was to push CSE within the electrical engineering community, which is especially important, as CSE is still very much under-represented in this particular field. We had eight speakers, covering a broad range of topics. The introductory talk presented an overview of the Laboratory’s research challenges and approaches. The following talks were given (presenters underlined):
- Computational and Numerical Challenges in Semiconductor Process Simulation, P.Manstetten, V.Šimonka, G.Diamantopoulos, L.Gnam, A.Makarov, A.Hössinger, J.Weinbub (TU Wien, Austria)
- Electron Transport in Nanostructures: Physical Models and Numerical Methods, M.V.Fischetti (University of Texas at Dallas, USA), W.Vandenberghe, M.Van de Put, J.Fang, S.Chen
- Modeling Spin-Dependent Phenomena for New Device Application, V. Sverdlov (TU Wien, Austria), J.Weinbub, S.Selberherr
- Fast Reaction-Diffusion of Defects in Cadmium Telluride, D.Brinkman (San Jose State University, USA), C.Ringhofer
- How Do Electrons Move in Space? Flux Discretizations for Non-Boltzmann Statistics, P.Farrell (Weierstrass Institute, Germany), T.Koprucki, J.Fuhrmann
- Semiconductor Device Simulation Approaches for Massively Parallel Computing Architectures, K.Rupp (TU Wien, Austria)
- Modeling and Simulations Using Time-Dependent Density Functional Theory, J.Kestyn (University of Massachusetts Amherst, USA), E.Polizzi
- NEMO5: A Parallelized Multi-Scale and Multi-Physics Nanodevices Simulation Software, X.Guo (Purdue University, USA), D.Lemus, D.Mejia, J.Fonseca, G.Klimeck, T.Kubis
Our manuscript titled Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces has been accepted for presentation at the International Conference on Computational Science (ICCS) 2017. The conference will take place June 12-14, 2017 in Zürich, Switzerland.
Together with our industrial partner, Silvaco Inc., we are offering new master’s thesis topics and (sponsored) internships.
In general we are looking for young Bachelor’s or Master’s students (preferably from the TU Wien) with some experience and strong interest in C/C++ software engineering in GNU/Linux. All topics are on research relevant topics. Aside from developing highly required tools, the students will also get in touch with Silvaco and with other similarly minded students. The Students will get first hand experiences on working with a global software player within the fast progressing electronics industry.
Our manuscript titled Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide, spearheaded by Vito, has been accepted for publication in the Journal of Applied Physics. In this paper, we provide a full set of growth rate coefficients to enable high-accuracy two- and three-dimensional simulations of dry thermal oxidation of 4H-silicon carbide.