Alexander Toifl starts today as a doctoral student in the HPTCAD team and will investigate high performance modeling and simulation approaches for non-planar epitaxy. Alexander studied electrical engineering at the TU Wien and defended his Master’s thesis on “Modeling and Simulation of Thermal Annealing of Implanted GaN and SiC” (supervised by Vito) in June 2018. Welcome to our team, Alex!
On June, 28th our team member Paul Manstetten defended his dissertation “Efficient Flux Calculations for Topography Simulation” with distinction. He will continue his research within the team as a postdoctoral researcher.
Special thanks go to the defence committee: his supervisor, Prof. Siegfried Selberherr, the committee chair, Prof. Ulrich Schmid and last but not least the external reviewers: PD Dr. Harald Köstler from FAU Erlangen-Nürenberg, Germany and Prof. Michael Wimmer from TU Wien, Austria.
Michael Quell started as a doctoral student in the HPTCAD team on June 4. He will focus on high performance data structures for process TCAD. Welcome to our team!
Vito’s paper “Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide” has been accepted for publication in the Journal of Applied Physics.
The HPTCAD continues to grow in 2018. Luiz Felipe Aguinsky joined the HPTCAD team as a doctoral student. He will be working on advanced high performance etching simulations. Welcome to our team!
Our papers, both spearheaded by Vito, “ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation” and “Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide” have been accepted for publication in the Journal of Physical Chemistry A and in the IEEE Transactions on Electron Devices, respectively.
Our manuscript titled Using Graph Partitioning and Coloring for Flexible Coarse-Grained
Shared-Memory Parallel Mesh Adaptation has been accepted for presentation as a research note at the International Meshing Roundtable (IMR). The conference will take place September 18-21, 2017 in Barcelona, Spain.
Our manuscript titled Modeling and Simulation of Electrical Activation
of Acceptor-Type Dopants in Silicon Carbide has been accepted for presentation as a poster at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017. The conference will take place September 17-22, 2017 in Washington DC, USA.
Our papers entitled Accelerated Direct Flux Calculations
Using an Adaptively Refined Icosahedron and An Empirical Model for Electrical Activation of
Phosphorus and Nitrogen Implanted Silicon Carbide have been accepted for presentation at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). The conference will take place September 7-9, 2017 in Kamakura, Japan.
Our manuscript titled Evaluation of the Shared-Memory Parallel Fast Marching Method for
Re-Distancing Problems has been accepted for presentation as a PhD showcase at the International Conference on Computational Science and Its Applications (ICCSA) 2017. The conference will take place July 3-6, 2017 in Trieste, Italy.