Category Archives: Paper accepted

Papers Accepted in JPC A and in IEEE TED

Our papers, both spearheaded by Vito, “ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation” and “Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide” have been accepted for publication in  the Journal of Physical Chemistry A and in the IEEE Transactions on Electron Devices, respectively.

Papers Accepted SISPAD 2016

Our two manuscripts titled Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures and Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation have been accepted for poster presentation at the  2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). The conference will take place on September 6-8, 2016 in Nuremberg, Germany.