Category Archives: Paper accepted

Papers Accepted SISPAD 2016

Our two manuscripts titled Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures and Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation have been accepted for poster presentation at the  2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). The conference will take place on September 6-8, 2016 in Nuremberg, Germany.

Papers Accepted EUROSOI-ULIS 2016

Our two manuscripts titled Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations and  Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes have been accepted for the International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). The conference will take place January 25-27, 2016 in Vienna, Austria.