Our manuscript titled Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces has been accepted for presentation at the International Conference on Computational Science (ICCS) 2017. The conference will take place June 12-14, 2017 in Zürich, Switzerland.
Our manuscript titled Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide, spearheaded by Vito, has been accepted for publication in the Journal of Applied Physics. In this paper, we provide a full set of growth rate coefficients to enable high-accuracy two- and three-dimensional simulations of dry thermal oxidation of 4H-silicon carbide.
Our two manuscripts titled Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures and Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation have been accepted for poster presentation at the 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). The conference will take place on September 6-8, 2016 in Nuremberg, Germany.
Our five-page manuscript titled Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method has been accepted for the International Conference on Computational Science (ICCS). The conference will take place June 6-8, 2016 in San Diego, CA, USA.
Our eight-page manuscript titled Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach has been accepted for presentation at the High Performance Computing (HPC) Symposium 2016. The conference will take place April 3-6, 2016 in Pasadena, CA, USA.
Our two manuscripts titled Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations and Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes have been accepted for the International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). The conference will take place January 25-27, 2016 in Vienna, Austria.