Publications

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19.

Dominik Koukola

Using Instancing to Model Boundary Conditions for Direct Flux in 3D High Performance TCAD Simulations Miscellaneous

Bachelor's Thesis, TU Wien, 2016.

BibTeX | Tags: Bachelor's Thesis, Plasma Etching

18.

Paul Ellinghaus, Mihail Nedjalkov, Josef Weinbub, Siegfried Selberherr

Wigner Modelling of Quantum Wires Inproceedings

Abstracts Workshop on Innovative Devices and Systems (WINDS), pp. 2, 2016, (invited).

Links | BibTeX | Tags: invited, Talk, Wigner

17.

Matthias Franz Glanz

Parallelization Strategies for Particle Monte Carlo Simulations Miscellaneous

Bachelor's Thesis, TU Wien, 2016.

BibTeX | Tags: Bachelor's Thesis, Wigner

16.

Mihail Nedjalkov, Josef Weinbub, Siegfried Selberherr

Modeling Carrier Transport in Nanoscale Semiconductor Devices Inproceedings

Abstracts of the BIT’s Annual World Congress of Nano Science & Technology (Nano S&T), pp. 377, 2016, (invited).

Links | BibTeX | Tags: invited, Talk, Wigner

15.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures Using One-Dimensional Radiosity Journal Article

Solid-State Electronics, 128 , pp. 141-147, 2016, (invited).

Links | BibTeX | Tags: High Aspect Ratio, invited, Neutral Particle Flux, Plasma Etching, Radiosity, Solid-State Electronics

14.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation Journal Article

Solid-State Electronics, 128 , pp. 135-140, 2016, (invited).

Links | BibTeX | Tags: Growth Rate, invited, Oxidation, SiC, Solid-State Electronics

13.

Vito Šimonka, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide Journal Article

Journal of Applied Physics, 120 (13), pp. 135705-1–135705-8, 2016.

Links | BibTeX | Tags: Growth Rate, Journal of Applied Physics, Oxidation, SiC

12.

Mihail Nedjalkov, Josef Weinbub, Ivan Dimov, Siegfried Selberherr

Signed Particle Interpretation for Wigner-Quantum Electron Evolution Inproceedings

Abstracts of the Third National Congress of Physical Sciences, pp. 1, 2016, (invited).

Links | BibTeX | Tags: invited, Talk, Wigner

11.

Josef Weinbub, Andreas Hössinger

Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach Inproceedings

Proceedings of the 24th High Performance Computing Symposium, pp. 18:1-18:8, 2016, ISBN: 978-1-5108-2318-1.

Links | BibTeX | Tags: FMM, HPC, HPC Symposium, Parallel Algorithm, Redistancing, Talk

10.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 265 - 268, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Poster, SISPAD

9.

Vito Šimonka, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 233 - 236, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: Growth Rate, Oxidation, Poster, SiC, SISPAD

8.

Josef Weinbub, Andreas Hössinger

Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method Journal Article

Procedia Computer Science, 80 , pp. 2271-2275, 2016.

Links | BibTeX | Tags: FIM, FMM, ICCS, Parallel Algorithm, Poster, Redistancing, SOFI

7.

Mihail Nedjalkov, Josef Weinbub, Siegfried Selberherr

The Description of Carrier Transport for Quantum Systems Inproceedings

Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum, pp. 41-42, 2016, (invited).

Links | BibTeX | Tags: EMN, invited, Wigner

6.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 120-123, 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity

5.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 226-229 , 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Oxidation, SiC

4.

Andreas Morhammer, Karl Rupp, Florian Rudolf, Josef Weinbub

Optimized Sparse Matrix-Matrix Multiplication for Multi-Core CPUs, GPUs, and MICs Inproceedings

Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC), pp. 23, 2016.

Links | BibTeX | Tags: AHPC, HPC

3.

Karl Rupp, Josef Weinbub

A Computational Scientist's Perspective on Current and Future Hardware Architectures Inproceedings

Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC), pp. 24, 2016.

Links | BibTeX | Tags: AHPC, HPC

2.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 68-69, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity, Talk

1.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 128-129, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, Oxidation, Poster, SiC