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Vito Šimonka, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 233 - 236, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: Growth Rate, Oxidation, Poster, SiC, SISPAD