Publications

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4.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 120-123, 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity

3.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 226-229 , 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Oxidation, SiC

2.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 68-69, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity, Talk

1.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 128-129, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, Oxidation, Poster, SiC