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Vito Šimonka, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide Journal Article

Journal of Applied Physics, 120 (13), pp. 135705-1–135705-8, 2016.

Links | BibTeX | Tags: Growth Rate, Journal of Applied Physics, Oxidation, SiC