Publications

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5.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Inproceedings

Book of Abstracts of the International Conference on Silicon Carbide and Related Materials (ICSCRM), 2017.

Links | BibTeX | Tags: Annealing, ICSCRM, Poster, SiC, thermal activation

4.

Paul Manstetten; Lado Filipovic; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 265 - 268, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Poster, SISPAD

3.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 233 - 236, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: Growth Rate, Oxidation, Poster, SiC, SISPAD

2.

Josef Weinbub; Andreas Hössinger

Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method Journal Article

Procedia Computer Science, 80 , pp. 2271-2275, 2016.

Links | BibTeX | Tags: FIM, FMM, ICCS, Parallel Algorithm, Poster, Redistancing, SOFI

1.

Vito Šimonka; Georg Nawratil; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 128-129, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, Oxidation, Poster, SiC