A Modern Formulation of Knudsen Diffusion with Applications to Nanofabrication Inproceedings
In: Proceedings of the IEEE International Conference on Nanotechnology (NANO), 2023.
Hierarchical Grid Algorithms for Topography Simulation PhD Thesis
2023, (TU Wien, Supervisor: J. Weinbub, Reviewers: J. Schöberl (TU Wien) and Y.-H.R. Tsai (University of Texas at Austin) ).
3D Modeling of Feature-Scale Fluorocarbon Plasma Etching in Silica Journal Article
In: Journal of Computational Electronics, 2023.
Modeling Incomplete Conformality During Atomic Layer Deposition in High Aspect Ratio Structures Journal Article
In: Solid-State Electronics, vol. 201, pp. 108584, 2023, (invited).
A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions Journal Article
In: Journal of Scientific Computing, vol. 94, no. 3, 2023.
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations Journal Article
In: Solid-State Electronics, vol. 200, pp. 108534, 2023, (invited).
Phenomenological Modeling of Reactive Single-Particle Transport in Semiconductor Processing PhD Thesis
2022, (TU Wien, Supervisor: J. Weinbub, Reviewers: U. Schmid (TU Wien) and M. Law (University of Florida)).
Wigner Dynamics of Electron Quantum Superposition States in a Confined and Opened Quantum Dot Inproceedings
In: Proceedings of the IEEE International Conference on Nanotechnology (NANO), pp. 565-568, 2022.
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations Inproceedings
In: Book of Abstracts of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 117-118, 2022.
Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures Inproceedings
In: Book of Abstracts of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 40-41, 2022.
3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching Inproceedings
In: Book of Abstracts of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 32-33, 2022.
Wigner Signed-Particles: Computational Challenges and Simulation Opportunities Inproceedings
In: Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, 2022, (invited).
Quantum Transport in Phase Space: Introduction and Applications Conference
Summer School on Methods and Models of Kinetic Theory, 2022, (invited).
Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon Journal Article
In: Solid-State Electronics, vol. 191, pp. 108262, 2022, (invited).
Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes Inproceedings
In: Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC), 2022.
Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations Journal Article
In: Solid-State Electronics, vol. 191, pp. 108258, 2022, (invited).
2022, (TU Wien, Supervisor: J. Weinbub, Reviewers: E. Gröller (TU Wien) and M. Sussman (Florida State University)).
Electron Quantum Optics for Quantum Interference Logic Devices Inproceedings
In: Book of Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), pp. 58-59, 2021.
Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si Incollection
In: B. Cretu (Ed.): Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1-4, IEEE, 2021.
Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations Incollection
In: B. Cretu (Ed.): Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1-4, IEEE, 2021.
Modeling and Simulation of Two-Dimensional Single-Electron Dynamics Inproceedings
In: Proceedings of the Global Summit on Condensed Matter Physics (CONMAT), 2021, (invited).
Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators Journal Article
In: Journal of Micromechanics and Microengineering, vol. 31, no. 12, pp. 125003, 2021.
Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 229-232, 2021.
Modeling and Simulation of Two-Dimensional Single-Electron Control Inproceedings
In: Proceedings of the International Meet on Nanotechnology (NANOMEET), 2021, (invited).
Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations Inproceedings
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 109-110, 2021.
Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si Inproceedings
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 54 - 55, 2021.
Numerical Methods for Three-Dimensional Selective Epitaxy and Anisotropic Wet Etching Simulations PhD Thesis
2021, (TU Wien, Supervisor: J. Weinbub, Reviewers: U. Schmid (TU Wien) and L.-T. Cheng (University of California, San Diego)).
Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD Journal Article
In: IEEE Transactions on Electron Devices , vol. 68, no. 11, pp. 5430-5437, 2021.
In: M. van Beurden; N. Budko; W. Schilders (Ed.): Scientific Computing in Electrical Engineering, Mathematics in Industry, pp. 73 - 81, Springer International Publishing, 2021.
Evaluating Parallel Feature Detection Methods for Implicit Surfaces Inproceedings
In: Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC), 2021.
Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena Inproceedings
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 101 - 102, 2021.
Modeling Coulomb Interaction with a 'Wigner-Poisson' Coupling Scheme Inproceedings
In: Book of Abstracts of the International Wigner Workshop (IW2), pp. 64 - 65, 2021.
Electromagnetic Coherent Electron Control Inproceedings
In: Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC), pp. 1 - 4 , 2021, (invited).
Continuum Level-set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates Journal Article
In: Semiconductor Science and Technology, vol. 36, no. 4, pp. 045016, 2021.
Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes Journal Article
In: Journal of Computational and Applied Mathematics, vol. 392, pp. 113488, 2021.
Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine Conference
SURGE Silvaco UseRs Global Event, 2020, (invited).
Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 39-42, 2020.
Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method Incollection
In: I. Dimov; S. Fidanova (Ed.): Advances in High Performance Computing, Studies in Computational Intelligence, vol. 902, pp. 438-451, Springer International Publishing, 2020.
Single Electron Control by a Uniform Magnetic Field in a Focusing Double-Well Potential Structure Inproceedings
In: Proceedings of the IEEE International Conference on Nanotechnology (NANO), pp. 73 - 76 , 2020.
The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy Journal Article
In: IEEE Access, vol. 8, pp. 115406-115422, 2020.
Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes Inproceedings
In: Proceedings of the European Seminar on Computing (ESCO), pp. 1, 2020.
High Performance Mesh Adaptation for Technology Computer-Aided Design PhD Thesis
2020, (TU Wien, Supervisor: J. Weinbub, Reviewers: J. Schöberl (TU Wien) and N. Hitschfeld Kahler (Chile University) ).
Parallelized Construction of Extension Velocities for the Level-Set Method Incollection
In: R. Wyrzykowski; E. Deelman; J. Dongarra; K. Karczewski (Ed.): Parallel Processing and Applied Mathematics, vol. 12043, pp. 348 - 358, Springer International Publishing, 2020.
A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes Inproceedings
In: Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE), pp. 99-100, 2020.
High Performance Simulation of Microelectronic Devices with Nanometer Dimensions Miscellaneous
2020, (Habilitation, TU Wien).
Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation Inproceedings
In: Proceedings of the High Performance Computing Conference (HPC), pp. 45, 2019.
Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 335 - 338, 2019.
Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 327 - 330, 2019.
Computational Strategies for Two-Dimensional Wigner Monte Carlo Inproceedings
In: Proceedings of the High Performance Computing Conference (HPC), pp. 55-56, 2019, (invited).
Parallelized Construction of Extension Velocities for the Level-Set Method Inproceedings
In: Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM), pp. 42, 2019.
An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching Inproceedings
In: Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE), 2019.
A Flexible Shared-Memory Parallel Mesh Adaptation Framework Inproceedings
In: Proceedings of the International Conference on Computational Science and Its Applications (ICCSA), pp. 158-165, 2019.
Surface Morphology of 4H-SiC After Thermal Oxidation Journal Article
In: Materials Science Forum, vol. 963, pp. 180-183, 2019.
Electron Interference in Single- and Double-Dopant Potential Structures Inproceedings
In: Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC), pp. 103-104, 2019.
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics Journal Article
In: IEEE Transactions on Electron Devices , vol. 66, pp. 3060 - 3065 , 2019.
High Performance Computing Aspects in Semiconductor Process Simulation Inproceedings
In: Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD), pp. 3-4, 2019, (invited).
High-Performance Ray Tracing for Nonimaging Applications Inproceedings
In: Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD), pp. 20, 2019.
High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport Inproceedings
In: Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD), pp. 13, 2019.
A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description Inproceedings
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 109-110, 2019.
Effects of Repulsive Dopants on Quantum Transport in a Nanowire Inproceedings
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 115-116, 2019.
Linking Wigner Function Negativity to Quantum Coherence in a Nanowire Inproceedings
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 59-60, 2019.
Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach Inproceedings
In: Book of Abstracts of the International Wigner Workshop (IW2), pp. 24–25, 2019.
Electron Interference and Wigner Function Negativity in Dopant Potential Structures Inproceedings
In: Book of Abstracts of the International Wigner Workshop (IW2), pp. 14–15, 2019.
A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing Journal Article
In: Advances in Computational Mathematics, vol. 45, pp. 2029-2045, 2019.
Recent Advances in High Performance Process TCAD Inproceedings
In: Book of Abstracts of the SIAM Conference on Computational Science and Engineering (CSE) Conference , pp. 335, 2019.
Accelerating Flux Calculations Using Sparse Sampling Incollection
In: L. Filipovic; T. Grasser (Ed.): Miniaturized Transistors, pp. 176-192, MDPI, 2019, (invited).
Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms Incollection
In: G. Nikolov; N. T. Kolkovska; K. Georgiev (Ed.): Lecture Notes in Computer Science, vol. 11189, pp. 106-114, Springer, 2019.
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 336-339, 2018.
Electron Interference in a Double-Dopant Potential Structure Inproceedings
In: Abstracts Workshop on Innovative Devices and Systems (WINDS), pp. 52 - 53, 2018.
Thermal Oxidation and Dopant Activation of Silicon Carbide PhD Thesis
2018, (TU Wien, Supervisors: S. Selberherr and J. Weinbub, Reviewers: U. Schmid (TU Wien) and Y. Hijikata (Saitama University)).
Accelerating Flux Calculations Using Sparse Sampling Journal Article
In: Micromachines, vol. 9, no. 550, pp. 1-17, 2018, (invited).
Recent Advances in Wigner Function Approaches Journal Article
In: Applied Physics Reviews , no. 5, pp. 041104-1 - 041104-24, 2018, (invited).
Performance Improvements For Advanced Physical Etching And Deposition In Memory Technologies Conference
SURGE Silvaco UseRs Global Event , 2018, (invited).
Advancements In Annealing And Oxidation Steps For Compound Semiconductor Power Devices Conference
SURGE Silvaco UseRs Global Event, 2018, (invited).
Surface Morphology of 4H-SiC After Thermal Oxidation Inproceedings
In: Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM), 2018.
Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms Inproceedings
In: Proceedings of the International Conference on Numerical Methods and Applications (NM&A), 2018.
Efficient Flux Calculations for Topography Simulation PhD Thesis
2018, (TU Wien, Supervisors: S. Selberherr and J. Weinbub, Reviewers: M. Wimmer (TU Wien) and H. Köstler (FAU Erlangen-Nürenberg)).
Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide Inproceedings
In: Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT), pp. 42-44, 2018.
Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide Journal Article
In: Journal of Applied Physics, vol. 123, no. 23, pp. 235701, 2018.
Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme Incollection
In: Y. Shi; H. Fu; Y. Tian; V. Krzhizhanovskaya; M. Lees; J. Dongarra; P. Sloot (Ed.): Lecture Notes in Computer Science, vol. 10860, pp. 694-707, Springer, 2018.
A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing Inproceedings
In: Proceedings of the European Seminar on Computing (ESCO), 2018.
Comparison of High-Performance Graph Coloring Algorithms Inproceedings
In: Proceedings of the Vienna Young Scientists Symposium (VSS), pp. 30-31, 2018.
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Journal Article
In: Materials Science Forum, vol. 924, pp. 192-195, 2018.
Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide Journal Article
In: IEEE Transactions on Electron Devices, vol. 65, no. 2, pp. 674 - 679, 2018.
ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation Journal Article
In: Journal of Physical Chemistry A, vol. 121, no. 46, pp. 8791 - 8798, 2017.
Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation Inproceedings
In: Proceedings of the International Meshing Roundtable (IMR), 2017.
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Inproceedings
In: Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), 2017.
Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 73 - 76, 2017.
Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems Inproceedings
In: Proceedings of the International Conference on Computational Science and Its Applications (ICCSA), 2017.
Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 125 - 128, 2017.
Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces Journal Article
In: Procedia Computer Science, vol. 128, pp. 245 - 254, 2017.
Towards a Metric for an Automatic Hull Mesh Coarsening Strategy Inproceedings
In: Proceedings of the Vienna Young Scientists Symposium (VSS), pp. 118-119, 2017.
Computational and Numerical Challenges in Semiconductor Process Simulation Inproceedings
In: Book of Abstracts of the SIAM Conference on Computational Science and Engineering (CSE) Conference, 2017.
Modeling Spin-Dependent Phenomena for New Device Applications Inproceedings
In: Book of Abstracts of the SIAM Conference on Computational Science and Engineering (CSE) Conference , 2017, (invited).
Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures Using One-Dimensional Radiosity Journal Article
In: Solid-State Electronics, vol. 128, pp. 141-147, 2017, (invited).
Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation Journal Article
In: Solid-State Electronics, vol. 128, pp. 135-140, 2017, (invited).
Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav Conference
Faculty of Natural Sciences and Mathematics, University of Maribor, 2017, (invited).
Wigner Modelling of Quantum Wires Inproceedings
In: Abstracts Workshop on Innovative Devices and Systems (WINDS), pp. 2, 2016, (invited).
Modeling Carrier Transport in Nanoscale Semiconductor Devices Inproceedings
In: Abstracts of the BIT’s Annual World Congress of Nano Science & Technology (Nano S&T), pp. 377, 2016, (invited).
Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide Journal Article
In: Journal of Applied Physics, vol. 120, no. 13, pp. 135705, 2016.
Signed Particle Interpretation for Wigner-Quantum Electron Evolution Inproceedings
In: Abstracts of the National Congress of Physical Sciences, 2016, (invited).
Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach Inproceedings
In: Proceedings of the High Performance Computing (HPC) Symposium, pp. 18:1-18:8, 2016.
Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 265 - 268, 2016.
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Inproceedings
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 233 - 236, 2016.
Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method Journal Article
In: Procedia Computer Science, vol. 80, pp. 2271-2275, 2016.
The Description of Carrier Transport for Quantum Systems Inproceedings
In: Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum, pp. 41-42, 2016, (invited).
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations Incollection
In: V. Sverdlov; S. Selberherr (Ed.): 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 226-229 , 2016.
Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes Incollection
In: V. Sverdlov; S. Selberherr (Ed.): 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 120-123, 2016.
Optimized Sparse Matrix-Matrix Multiplication for Multi-Core CPUs, GPUs, and MICs Inproceedings
In: Book of Abstracts of the 2016 Austrian HPC (AHPC) Meeting, 2016.
A Computational Scientist's Perspective on Current and Future Hardware Architectures Inproceedings
In: Book of Abstracts of the Austrian HPC (AHPC) Meeting, 2016.
Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach Inproceedings
In: Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 68-69, 2016.
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Inproceedings
In: Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 128-129, 2016.