Publications

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5.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation Journal Article

Solid-State Electronics, 128 , pp. 135-140, 2016, (invited).

Links | BibTeX | Tags: Growth Rate, invited, Oxidation, SiC, Solid-State Electronics

4.

Vito Šimonka, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide Journal Article

Journal of Applied Physics, 120 (13), pp. 135705-1–135705-8, 2016.

Links | BibTeX | Tags: Growth Rate, Journal of Applied Physics, Oxidation, SiC

3.

Vito Šimonka, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 233 - 236, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: Growth Rate, Oxidation, Poster, SiC, SISPAD

2.

Paul Manstetten, Lado Filipovic, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 120-123, 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity

1.

Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr

Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 128-129, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, Oxidation, Poster, SiC