Peter Fleischmann and Siegfried Selberherr
Institute for Microelectronics, TU Vienna, Gußhausstraße 27-29, A-1040 Vienna, Austria
Phone: +43/1/58801-3859, FAX: +43/1/5059224
E-mail: firstname.lastname@example.org, WWW: http://www.iue.tuwien.ac.at
Abstract. - We introduce a combination of Delaunay methods with advancing front techniques especially suitable for local regridding and semiconductor simulation applications. Element quality improvement can be handled by local mesh adaptation steps. The three-dimensional meshing algorithm is suitable for complicated structures, because of its fully unstructured nature. The resulting Delaunay mesh possesses the flexibility possible within the scope of a tetrahedral representation not like octree based or other cartesian meshes which are commonly employed in Technology CAD (TCAD).
Figure 1: The emerging mesh of a hand