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Publication list for
Hajdin Ceric
as author or essentially involved person

164 records


Books and Editorships


1. H. Ceric, S. Selberherr:
"Editorial Preface to the Special Section on Electromigration Published in March 2009";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 103 doi:10.1109/TDMR.2009.2020086.


Publications in Scientific Journals


26. S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During Nanoindentation in Open TSVs";
IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727.

25. P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014.

24. R. Coppeta, D. Holec, H. Ceric, T. Grasser:
"Evaluation of Dislocation Energy in Thin Films";
Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573.

23. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282.

22. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021.

21. H. Ceric, R. Lacerda de Orio, W. H. Zisser, S. Selberherr:
"Microstructural Impact on Electromigration: A TCAD Study";
Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C.

20. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099.

19. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132.

18. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035.

17. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021.

16. H. Ceric, S. Selberherr:
"Electromigration in Submicron Interconnect Features of Integrated Circuits";
Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001.

15. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049.

14. I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021.

13. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267.

12. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089.

11. R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm:
"Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing";
IEEE Transactions on Device and Materials Reliability, 10, (2010), 47 - 54 doi:10.1109/TDMR.2009.2032768.

10. R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel:
"Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing";
Measurement Science & Technology, 21, (2010), 55702 - 55710.

9. R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007.

8. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0.

7. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893.

6. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Journal Integrated Circuits and Systems, 4, (2009), 67 - 72.

5. J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1.

4. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9.

3. M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr:
"Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method";
IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240.

2. H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426.

1. H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5.


Contributions to Books


2. H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268.

1. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
in "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, Vol. 1 No. 1", issued by H.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol; ECS Transactions, Pennington, 2005, ISBN: 1-56677-430-6, 103 - 113.


Talks and Poster Presentations (with Proceedings-Entry)


118. S. Papaleo, M. Rovitto, H. Ceric:
"Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall";
Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 1617 - 1622 doi:10.1109/ECTC.2016.19.

117. M. Rovitto, H. Ceric:
"Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias";
Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 550 - 556 doi:10.1109/ECTC.2016.49.

116. H. Ceric, R. Lacerda de Orio, M. Rovitto:
"TCAD Approach for the Assessment of Interconnect Reliability";
Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 2016-05-30 - 2016-06-01; in "Abstracts of 14th International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21.

115. S. Papaleo, H. Ceric:
"A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8, PA-2-1 - PA-2-4 doi:10.1109/IRPS.2016.7574626.

114. A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser:
"Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the 2015 IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064.

113. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60.

112. H. Ceric, M. Rovitto:
"Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 194 - 197 doi:10.1109/SISPAD.2015.7292292.

111. S. Papaleo, W. H. Zisser, H. Ceric:
"Factors that Influence Delamination at the Bottom of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 421 - 424 doi:10.1109/SISPAD.2015.7292350.

110. S. Papaleo, W. H. Zisser, H. Ceric:
"Effects of the Initial Stress at the Bottom of Open TSVs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), .

109. M. Rovitto, W. H. Zisser, H. Ceric:
"Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), .

108. H. Ceric, S. Selberherr:
"Compact Model for Solder Bump Electromigration Failure";
Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 2015-05-18 - 2015-05-21; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5, 159 - 161 doi:10.1109/IITC-MAM.2015.7325651.

107. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471.

106. M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser:
"Electromigration Modelling of Void Nucleation in Open Cu-TSVs";
Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the IEEE 16th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100.

105. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763.

104. H. Ceric, W. H. Zisser, S. Selberherr:
"Quantum Mechanical Calculations of Electromigration Characteristics";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 16.

103. S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During the Nanoindentation in Open TSVs";
Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 44.

102. W. H. Zisser, H. Ceric, S. Selberherr:
"Void Evolution in Open TSVs";
Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 58.

101. R. Lacerda de Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
"On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2014-10-12 - 2014-10-16; in "Final Report International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523.

100. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
"Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512.

99. Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511.

98. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48.

97. H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr:
"Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603.

96. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Induced Resistance Increase in Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610.

95. S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Analysis in Open TSVs after Nanoindentation";
Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 39 - 40.

94. W. H. Zisser, H. Ceric, S. Selberherr:
"Stress Development and Void Evolution in Open TSVs";
Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 38 - 39.

93. H. Ceric, S. Selberherr:
"Electromigration Reliability of Solder Bumps";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 336 - 339 doi:10.1109/IPFA.2014.6898145.

92. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179.

91. H. Ceric, S. Selberherr:
"Electromigration Induced Failure of Solder Bumps and the Role of IMC";
Poster: International Interconnect Technology Conference (IITC), San Jose, USA; 2014-05-20 - 2014-05-23; in "Proc. Intl. Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1, 265 - 267 doi:10.1109/IITC.2014.6831891.

90. H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
"3D Technology Interconnect Reliability TCAD";
Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 2014-02-11 - 2014-02-13; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8.

89. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185.

88. R. Coppeta, H. Ceric, D. Holec, T. Grasser:
"Critical thickness for GaN thin film on AlN substrate";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 133 - 136.

87. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Induced Stress in Open TSVs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179.

86. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577.

85. R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
"Epitaxial Volmer-Weber Growth Modelling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570.

84. R. Orio, H. Ceric, S. Selberherr:
"Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617.

83. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Estimation in Open Tungsten TSV";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 65 - 68 doi:10.1109/SISPAD.2013.6650575.

82. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Analyses of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620.

81. H. Ceric, R. Orio, S. Selberherr:
"Analysis of Solder Bump Electromigration Reliability";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258.

80. A. P. Singulani, H. Ceric, E. Langer:
"Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 216 - 220.

79. A. P. Singulani, H. Ceric, E. Langer:
"Stress reduction induced by Bosch scallops on an open TSV technology";
Poster: International Interconnect Technology Conference (IITC), Kyoto, Japan; 2013-06-13 - 2013-06-15; in "Proceedings of International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9, 1 - 2 doi:10.1109/IITC.2013.6615578.

78. A. P. Singulani, H. Ceric, L. Filipovic, E. Langer:
"Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology";
Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 2013-04-14 - 2013-04-17; in "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8, 6 page(s) doi:10.1109/EuroSimE.2013.6529938.

77. A. P. Singulani, H. Ceric, E. Langer, S. Carniello:
"Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), ISBN: 978-1-4799-0112-8, CP.2.1 - CP.2.5 doi:10.1109/IRPS.2013.6532066.

76. A. P. Singulani, H. Ceric, S. Selberherr:
"Thermo-mechanical Simulations of an Open Tungsten TSV";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-12-05 - 2012-12-07; in "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4, 110 - 114 doi:10.1109/EPTC.2012.6507061.

75. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986.

74. H. Ceric, R. Orio, S. Selberherr:
"TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267.

73. R. Orio, H. Ceric, S. Selberherr:
"Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271.

72. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in "ECS Transactions", (2012), Vol.1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst.

71. H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Ab Initio Method for Electromigration Analysis";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306.

70. H. Ceric, R. Orio, S. Selberherr:
"Atomistic Method for Analysis of Electromigration";
Poster: IEEE International Interconnect Technology Conference, San Jose, USA; 2012-06-04 - 2012-06-06; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) .

69. H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr:
"Modeling of Microstructural Effects on Electromigration Failure";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 2012-05-28 - 2012-05-30; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51.

68. I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

67. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), Vol.51, 1525 - 1529.

66. I. Starkov, H. Ceric:
"Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91.

65. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106.

64. H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr:
"Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068.

63. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Lifetime Estimation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040.

62. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066.

61. S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065.

60. R. Orio, H. Ceric, S. Selberherr:
"Modeling Electromigration Lifetimes of Copper Interconnects";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190.

59. H. Ceric, R. Orio, S. Selberherr:
"Integration of Atomistic and Continuum-Level Electromigration Models";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749.

58. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251.

57. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 2011-06-26 - 2011-07-01; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33.

56. L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr:
"A Simulator for Local Anodic Oxidation of Silicon Surfaces";
Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 2011-05-08 - 2011-05-11; in "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8, 695 - 698 doi:10.1109/CCECE.2011.6030543.

55. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) .

54. H. Ceric, R. Orio, S. Selberherr:
"Impact of Parameter Variability on Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523.

53. H. Ceric, R. Orio, S. Selberherr:
"Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170.

52. R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel:
"Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 1 - 6.

51. I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144.

50. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345.

49. I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128.

48. R. Huang, W. Robl, T. Detzel, H. Ceric:
"Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing";
Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 2010-05-02 - 2010-05-06; in "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 911 - 917.

47. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"Electromigration Failure Development in Modern Dual-Damascene Interconnects";
Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), Vol.15, ISBN: 978-3-90188-237-1, 5 page(s) .

46. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222.

45. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219.

44. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration-Induced Failure Development";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352.

43. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration Induced Voids";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697.

42. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on the Electromigration Lifetime Distribution";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734.

41. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Stress-Induced Anisotropy of Electromigration in Copper Interconnects";
Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 2008-11-05 - 2008-11-07; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62.

40. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Analysis of Microstructure Impact on Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282.

39. R. Orio, H. Ceric, S. Carniello, S. Selberherr:
"Analysis of Electromigration in Redundant Vias";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281.

38. R. Orio, S. Carniello, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348.

37. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"TCAD Solutions for Submicron Copper Interconnect";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81.

36. H. Ceric, R. Orio, S. Selberherr:
"Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2008-05-11 - 2008-05-14; in "Proceedings 26th International Conference on Microelectronics", (2008), ISBN: 978-1-4244-1881-7, 69 - 76.

35. R. Orio, H. Ceric, S. Selberherr:
"Strain-Induced Anisotropy of Electromigration in Copper Interconnect";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

34. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63.

33. H. Ceric, A. Nentchev, E. Langer, S. Selberherr:
"Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 37 - 40 doi:10.1007/978-3-211-72861-1_9.

32. J. Cervenka, H. Ceric, O. Ertl, S. Selberherr:
"Three-Dimensional Sacrificial Etching";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 433 - 436 doi:10.1007/978-3-211-72861-1_105.

31. H. Ceric, S. Selberherr:
"Electromigration Modeling for Interconnect Structures in Microelectronics";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro; (invited) 2007-09-03 - 2007-09-06; in "ECS Transactions", (2007), ISBN: 978-1-56677-565-6, 295 - 304.

30. H. Ceric, S. Selberherr:
"Electromigration in Interconnect Structures of Microelectronic Circuits";
Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija; (invited) 2007-05-21 - 2007-05-25; in "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8, 23 - 28.

29. J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Masapalomas; 2007-05-02 - 2007-05-04; in "Proceedings of SPIE", (2007), Vol.6589-6593, ISBN: 978-0-8194-6726-3, 65891L.1 - 65891L.9.

28. H. Ceric, E. Langer, S. Selberherr:
"Modeling of Residual Stresses in Thin Metal Films";
Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 2007-04-04 - 2007-04-06; in "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), 18.

27. H. Ceric, E. Langer, S. Selberherr:
"Three-Phase Model for the Volmer-Weber Crystal Growth";
Talk: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 2007-02-20 - 2007-02-23; in "Nanostructures and Carrier Interactions", (2007), 127.

26. Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr:
"Investigation of Intrinsic Stress Effects in Cantilever Structures";
Talk: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 2007-01-16 - 2007-01-19; in "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2, 4 page(s) .

25. Ch. Hollauer, H. Ceric, S. Selberherr:
"Modeling of Intrinsic Stress Effects in Deposited Thin Films";
Talk: EUROSENSORS XX, Göteborg; 2006-09-17 - 2006-09-20; in "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2, 324 - 325.

24. M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr:
"A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method";
Talk: European Microwave Week (EUMW), Manchester; 2006-09-10 - 2006-09-15; in "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0, 1 - 4.

23. H. Ceric, Ch. Hollauer, S. Selberherr:
"Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 192 - 195 doi:10.1109/SISPAD.2006.282869.

22. H. Ceric, J. Cervenka, E. Langer, S. Selberherr:
"Moving Boundary Applications in Process and Interconnect TCAD";
Talk: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 2006-08-13 - 2006-08-19; in "Proceedings Mini-Workshop on Anisotropic Motion Laws", (2006), Vol.Report No.38/2006, 13 - 16.

21. H. Ceric, Ch. Hollauer, S. Selberherr:
"Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9, 359 - 363.

20. S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr:
"Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157.

19. R. Wittmann, H. Puchner, H. Ceric, S. Selberherr:
"Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44.

18. R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
"Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET";
Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2005-10-17 - 2005-10-20; in "2005 IEEE International Integrated Reliability Workshop Final Report", (2005), ISBN: 0-7803-8992-1, 99 - 102.

17. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
Talk: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), ISSN: 1091-8213, 1 page(s) .

16. H. Ceric, Ch. Hollauer, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 2005-09-12 - 2005-09-14; in "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), P 17.

15. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Stress Dependent Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 183 - 186 doi:10.1109/SISPAD.2005.201503.

14. W. Wessner, H. Ceric, J. Cervenka, S. Selberherr:
"Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 147 - 150 doi:10.1109/SISPAD.2005.201494.

13. H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr:
"Comprehensive Analysis of Vacancy Dynamics Due to Electromigration";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103.

12. Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr:
"Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts";
Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol.Vol. 2, ISBN: 3-901167-12-9, 637 - 640.

11. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Sevilla; 2005-05-09 - 2005-05-11; in "VLSI Circuits and Systems II", (2005), ISBN: 0-8194-5832-5, 380 - 387.

10. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis";
Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623.

9. R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
"Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32.

8. H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78.

7. W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46.

6. Ch. Hollauer, H. Ceric, S. Selberherr:
"Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 383 - 386.

5. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 154 - 158.

4. H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
"Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145.

3. T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
"A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 183 - 186 doi:10.1109/SISPAD.2002.1034547.

2. H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 253 - 256 doi:10.1109/SISPAD.2002.1034566.

1. H. Ceric, S. Selberherr:
"Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2002-07-08 - 2002-07-12; in "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9, 140 - 144.


Talks and Poster Presentations (without Proceedings-Entry)


5. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 2013-09-30 - 2013-10-04; .

4. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; .

3. K. Rupp, H. Ceric:
"Analytical and Numerical Investigation of the Segregation Problem";
Talk: 4th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo; 2010-06-20 - 2010-06-26; .

2. W. Wessner, H. Ceric, Ch. Hollauer, E. Langer, S. Selberherr:
"Electromigration Reliability TCAD Solutions";
Talk: SEMICON Europa2005, München; (invited) 2005-04-12 - 2005-04-14; .

1. H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 2002-10-07 - 2002-10-11; .


Habilitation Theses


1. H. Ceric:
"Reliability of Interconnect Structures for Modern Integrated Circuits";
TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2014), .


Doctor's Theses (authored and supervised)


3. S. Papaleo:
"Mechanical Reliability of Open Through Silicon Via Structures for Integrated Circuits";
Reviewer: H. Ceric, O. Thomas; E360, 2016, oral examination: 2016-12-19.

2. M. Rovitto:
"Electromigration Reliability Issue in Interconnects for Three-Dimensional Integration Technologies";
Reviewer: H. Ceric, K. Weide-Zaage; E360, 2016, oral examination: 2016-12-13.

1. H. Ceric:
"Numerical Techniques in Modern TCAD";
Reviewer: S. Selberherr, H. Haas; Institut für Mikroelektronik, 2005, oral examination: 2005-04-29.


Diploma and Master Theses (authored and supervised)


2. W. H. Zisser:
"Untersuchung an Kupferkristallen unter Zuhilfenahme von MD Simulationen";
Supervisor: E. Langer, H. Ceric; E360, 2011, final examination: 2011-10-12.

1. H. Ceric:
"Analyse von WDM-LAN Zugriffsprotokollen unter Zuhilfenahme von Semi-Markov-Modellen";
Supervisor: K. Bengi, H.R. van As; E 388, 2000, .


Scientific Reports


6. H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr:
"VISTA Status Report I";
(2009), 30 page(s) .

5. H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr:
"VISTA Status Report I";
(2008), 38 page(s) .

4. H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr:
"VISTA Status Report I";
(2007), 29 page(s) .

3. H. Ceric, M. Karner, A. Nentchev, P. Schwaha, E. Ungersböck, S. Selberherr:
"VISTA Status Report II";
(2005), 29 page(s) .

2. H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr:
"VISTA Status Report I";
(2004), 28 page(s) .

1. H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr:
"VISTA Status Report II";
(2002), 35 page(s) .