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Publication list for
Klaus-Tibor Grasser
as author or essentially involved person

628 records


Books and Editorships


6. T. Grasser:
"Hot Carrier Degradation in Semiconductor Devices";
Springer International Publishing, (2014), ISBN: 978-3-319-08993-5, 517 page(s) doi:10.1007/978-3-319-08994-2.

5. T. Grasser:
"Bias Temperature Instability for Devices and Circuits";
Springer Science+Business Media New York, (2013), ISBN: 978-1-4614-7908-6, 810 page(s) doi:10.1007/978-1-4614-7909-3.

4. G. Meller, T. Grasser:
"Organic Electronics";
Springer-Verlag, Berlin-Heidelberg, (2009), ISBN: 978-3-642-04537-0, 328 page(s) doi:10.1007/978-3-642-04538-7.

3. T. Grasser, S. Selberherr:
"Simulation of Semiconductor Processes and Devices 2007";
Springer-Verlag, Wien - New York, Wien, (2007), ISBN: 978-3-211-72860-4, 460 page(s) doi:10.1007/978-3-211-72861-1.

2. T. Grasser, S. Selberherr:
"Modelling the Negative Bias Temperature Instability (Editorial)";
Microelectronics Reliability, 47, (2007), 839 - 840 doi:10.1016/j.microrel.2006.10.005.

1. T. Grasser:
"Advanced Device Modeling and Simulation";
World Scientific Publishing Co., (2003), ISBN: 9-812-38607-6, 210 page(s) .


Publications in Scientific Journals


149. Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials, 4, (2017), 1 - 10 doi:10.1088/2053-1583/aa734a.

148. B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
"Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872.

147. C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
"Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs";
Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231.

146. R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
"Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367.

145. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086.

144. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part II: Theory";
IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454.

143. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004.

142. Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814.

141. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03.

140. M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
"On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14.

139. X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
"Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032.

138. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010.

137. G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481.

136. K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
"A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z.

135. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
"ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419.

134. K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
"Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
ACM Transactions on Mathematical Software, 43, (2016), 11:1 - 11:27 doi:10.1145/2907944.

133. P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014.

132. S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
"Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs";
IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920.

131. Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
"Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices";
Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009.

130. R. Coppeta, D. Holec, H. Ceric, T. Grasser:
"Evaluation of Dislocation Energy in Thin Films";
Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573.

129. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hole trapping at hydrogenic defects in amorphous silicon dioxide";
Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073.

128. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503.

127. A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
"Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107.

126. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
"Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433.

125. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704.

124. Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
"TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015.

123. B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
"Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
IEEE Electron Device Letters, 36, (2015), 300 - 302 doi:10.1109/LED.2015.2404293.

122. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282.

121. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021.

120. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
"On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18.

119. M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser:
"Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207.

118. M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575.

117. V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
"Circuit simulation of workload-dependent RTN and BTI based on trap kinetics";
Microelectronics Reliability, 54, (2014), 2364 - 2370.

116. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
"NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578.

115. Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
"An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs";
Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22.

114. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
Applied Physics Letters, 105, (2014), 1435071 - 1435075.

113. G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959.

112. G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
"Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors";
Microelectronics Reliability, 54, (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040.

111. K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Proceedings in Applied Mathematics and Mechanics, 14, (2014), 963 - 964 doi:10.1002/pamm.201410462.

110. S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
"Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric";
Journal of Computational Electronics, 1, (2014), 1 - 6 doi:10.1007/s10825-014-0593-9.

109. S. E. Tyaginov, Y. Wimmer, T. Grasser:
"Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T.

108. T. Aichinger, M. Nelhiebel, T. Grasser:
"Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures";
Microelectronics Reliability, 53, (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007.

107. V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
"Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP, (2013), doi:10.1109/TVLSI.2013.2240323.

106. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
"NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
IEEE Transactions on Device and Materials Reliability, 13, (invited) (2013), 497 - 506 doi:10.1109/TDMR.2013.2281731.

105. J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI";
IEEE Transactions on Electron Devices, 60, (2013), 396 - 404 doi:10.1109/TED.2012.2225625.

104. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken:
"Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs";
Microelectronic Engineering, 109, (2013), 250 - 256 doi:10.1016/j.mee.2013.03.001.

103. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues";
IEEE Transactions on Electron Devices, 60, (2013), 405 - 412.

102. B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken:
"Gate Current Random Telegraph Noise and Single Defect Conduction";
Microelectronic Engineering, 109, (2013), 123 - 125 doi:10.1016/j.mee.2013.03.110.

101. G. Pobegen, T. Grasser:
"Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757.

100. G. Pobegen, T. Grasser:
"On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816.

99. G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
"Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015.

98. G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
"Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521.

97. M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken:
"Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions";
Journal of Vacuum Science & Technology B, 31, (2013), 01A114-1 - 01A114-4 doi:10.1116/1.4772587.

96. J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken:
"BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic";
Microelectronics Reliability, 52, (2012), 1932 - 1935 doi:10.1016/j.microrel.2012.06.058.

95. J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken:
"Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs";
IEEE Electron Device Letters, 33, (2012), 779 - 781.

94. T. Grasser:
"Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities";
Microelectronics Reliability, 52, (invited) (2012), 39 - 70 doi:10.1016/j.microrel.2011.09.002.

93. K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser:
"New Insights on the PBTI Phenomena in SiON pMOSFETs";
Microelectronics Reliability, 52, (2012), 1891 - 1894 doi:10.1016/j.microrel.2012.06.015.

92. F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
"A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1.

91. M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Defect-Centric Perspective of Time-Dependent BTI Variability";
Microelectronics Reliability, 52, (2012), 1883 - 1890 doi:10.1016/j.microrel.2012.06.120.

90. M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser:
"Applicability of Macroscopic Transport Models to Decananometer MOSFETs";
IEEE Transactions on Electron Devices, 59, (2012), 639 - 646 doi:10.1109/TED.2011.2181177.

89. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
"On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065.

88. W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473.

87. T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel:
"The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666.

86. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Journal of Vacuum Science & Technology B, 29, (invited) (2011), 01AB01-1 - 01AB01-7.

85. G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Microelectronics Reliability, 51, (2011), 1530 - 1534 doi:10.1016/j.microrel.2011.06.024.

84. F. Schanovsky, W. Gös, T. Grasser:
"Multiphonon Hole Trapping from First Principles";
Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269.

83. I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021.

82. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267.

81. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken:
"Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
Journal of Vacuum Science & Technology B, 29, (2011), 01AA04-1 - 01AA04-5 doi:10.1116/1.3532947.

80. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken:
"Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress";
Applied Physics Letters, 98, (2011), 183506-1 - 183506-3 doi:10.1063/1.3586780.

79. M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken:
"Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics";
Microelectronic Engineering, 88, (2011), 1243 - 1246 doi:10.1016/j.mee.2011.03.097.

78. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089.

77. T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip";
IEEE Transactions on Device and Materials Reliability, 10, (2010), 3 - 8.

76. T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress";
Journal of Applied Physics, 107, (2010), 024508-1 - 024508-8.

75. T. Aichinger, M. Nelhiebel, T. Grasser:
"Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen";
Applied Physics Letters, 96, (2010), 133511-1 - 133511-3.

74. T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer:
"Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors";
Physical Review B, 82, (2010), 245318-1 - 245318-10 doi:10.1103/PhysRevB.82.245318.

73. B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
IEEE Electron Device Letters, 31, (2010), 411 - 413 doi:10.1109/LED.2010.2044014.

72. K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
Journal of Computational Physics, 229, (2010), 8750 - 8765.

71. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance";
Applied Physics Letters, 96, (2010), 223509-1 - 223509-3 doi:10.1063/1.3428783.

70. F. Schanovsky, W. Gös, T. Grasser:
"An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT";
Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x.

69. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0.

68. T. Aichinger, M. Nelhiebel, T. Grasser:
"A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI";
IEEE Transactions on Electron Devices, 56, (2009), 3018 - 3026.

67. T. Grasser, B. Kaczer:
"Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs";
IEEE Transactions on Electron Devices, 56, (2009), 1056 - 1062 doi:10.1109/TED.2009.2015160.

66. T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882.

65. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040.

64. B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks";
Journal of Vacuum Science & Technology B, 27, (2009), 459 - 462.

63. H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 106 - 114 doi:10.1109/TDMR.2009.2021389.

62. S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018.

61. S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen:
"Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films";
Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307.

60. M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser:
"Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer";
Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066.

59. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Microelectronics Reliability, 48, (2008), 1178 - 1184 doi:10.1016/j.microrel.2008.06.018.

58. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247.

57. T. Grasser, W. Gös, B. Kaczer:
"Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models";
IEEE Transactions on Device and Materials Reliability, 8, (invited) (2008), 79 - 97 doi:10.1109/TDMR.2007.912779.

56. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353.

55. P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser:
"Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 490.

54. K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken:
"Applicability of Charge Pumping on Germanium MOSFETs";
IEEE Electron Device Letters, 29, (2008), 1364 - 1366 doi:10.1109/LED.2008.2007582.

53. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"A 2D Non-Parabolic Six-Moments Model";
Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010.

52. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x.

51. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533.

50. R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Microelectronics Reliability, 47, (2007), 697 - 699.

49. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102.

48. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
"Comparison of Deposition Models for a TEOS LPCVD Process";
Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058.

47. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
"A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7.

46. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP - A Gate Stack Analyzer";
Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059.

45. G. Span, M. Wagner, T. Grasser, L. Holmgren:
"Miniaturized TEG with Thermal Generation of Free Carriers";
Physica Status Solidi - Rapid Research Letters, 1, (2007), 241 - 243 doi:10.1002/pssr.200701171.

44. M. Spevak, T. Grasser:
"Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26, (2007), 1408 - 1416.

43. O. Triebl, T. Grasser:
"Vector Discretization Schemes in Technology CAD Environments";
Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176.

42. M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser:
"Quantum Correction for DG MOSFETs";
Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7.

41. M. Wagner, G. Span, S. Holzer, T. Grasser:
"Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content";
Semiconductor Science and Technology, 22, (2007), 173 - 176.

40. J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
"Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514.

39. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639.

38. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6.

37. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845.

36. T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
"Numerical Analysis of SiC Merged PiN Schottky Diodes";
Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949.

35. T. Grasser:
"Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation";
Physica A: Statistical Mechanics and its Applications, 349, (2005), 221 - 258.

34. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
"Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311.

33. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium";
IEEE Transactions on Electron Devices, 52, (2005), 2404 - 2408.

32. S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793.

31. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"An Advanced Equation Assembly Module";
Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5.

30. T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042.

29. T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1.

28. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011.

27. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034.

26. J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015.

25. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035.

24. T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4.

23. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440.

22. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X.

21. T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150.

20. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1.

19. A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X.

18. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617.

17. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273.

16. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257.

15. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik, 444, (invited) (2002), 28 - 41.

14. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik, 444, (invited) (2002), 18 - 27.

13. T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354.

12. T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162.

11. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645.

10. H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031.

9. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002.

8. F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884.

7. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757.

6. T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366.

5. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000.

4. T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661.

3. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6.

2. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473.

1. T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5.


Contributions to Books


22. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
in "Circuit Design for Reliability", R. Reis, Y. Cao, G. Wirth (ed); Springer New York, 2015, ISBN: 978-1-4614-4077-2, 5 - 19 doi:10.1007/978-1-4614-4078-9_2.

21. W. Gös, F. Schanovsky, T. Grasser:
"Advanced Modeling of Oxide Defects";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 409 - 446 doi:10.1007/978-1-4614-7909-3_16.

20. T. Grasser:
"The Capture/Emission Time Map Approach to the Bias Temperature Instability";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 447 - 481.

19. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the RD Model";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 379 - 408.

18. K. Rupp, A. Jüngel, T. Grasser:
"A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
in "Lecture Notes in Computer Science, Vol. 7174", R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer, 2012, ISBN: 978-3-642-30396-8, 147 - 157 doi:10.1007/978-3-642-30397-5.

17. K. Rupp, A. Jüngel, T. Grasser:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
in "Progress in Industrial Mathematics at ECMI 2010", R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer, 2012, ISBN: 978-3-642-25099-6, 53 - 59 doi:10.1007/978-3-642-25100-9_7.

16. K. Rupp, P. Lagger, T. Grasser, A. Jüngel:
"Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
in "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242856.

15. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Models";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352.

14. W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
"Charge Trapping and the Negative Bias Temperature Instability";
in "Physics and Technology of High-k Materials 8", ECS Transactions, (invited) 2010, ISBN: 978-1-56677-822-0, 565 - 589.

13. K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
in "ASC Report 10/2010", issued by Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, 1 - 32.

12. O. Triebl, T. Grasser:
"Numerical Power/HV Device Modeling";
in "Power/HV MOS Devices Compact Modeling", Springer, (invited) 2010, ISBN: 978-90-481-3045-0, 1 - 32.

11. M. Vasicek, D. Esseni, C. Fiegna, T. Grasser:
"Modeling and Simulation Approaches for Drain Current Computation";
in "Nanoscale CMOS: Innovative Materials, Modeling and Characterization", issued by F. Balestra; Wiley, London, (invited) 2010, ISBN: 978-1-84821-180-3, 259 - 285.

10. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 443 - 450 doi:10.1007/978-3-642-12535-5_52.

9. T. Grasser, W. Gös, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability";
in "215th ECS Meeting", R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (ed); ECS Transactions, (invited) 2009, 265 - 287 doi:10.1149/1.3122096.

8. T. Grasser, W. Gös, B. Kaczer:
"Towards Engineering Modeling of Negative Bias Temperature Instability";
in "Defects in Microelectronic Materials and Devices", issued by D. Fleetwood, R. Schrimpf, S. Pantelides; Taylor and Francis/CRC Press, (invited) 2008, ISBN: 1420043765, 399 - 436.

7. B. Kaczer, T. Grasser, R. Fernandez, G. Groeseneken:
"Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9", R. Sah, J. Zhang, Y. Kamakura, M. Deen, J. Yota (ed); ECS Transactions, Pennington, (invited) 2007, ISBN: 978-1-56677-552-6, 265 - 281.

6. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
"Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425.

5. H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268.

4. M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser:
"Power Output Improvement of SiGe Thermoelectric Generators";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, 1151 - 1162.

3. T. Grasser:
"Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation";
in "Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II", issued by S.G. Pandalai; Transworld Research Network, (invited) 2004, ISBN: 81-7895-156-8, 423 - 446.

2. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

1. T. Grasser, S. Selberherr:
"Current Transport Models for Engineering Applications";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2002, ISBN: 0-471-21247-4, 87 - 98.


Talks and Poster Presentations (with Proceedings-Entry)


357. B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi:
"On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 2016-10-09 - 2016-10-13; in "2016 IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3, 3 page(s) .

356. Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
"A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90.

355. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
"Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209.

354. Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
"Temperature-dependent Hysteresis in Black Phosphorus FETs";
Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), .

353. K. Rupp, A. Morhammer, T. Grasser, A. Jüngel:
"Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors";
Talk: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 2016-05-16 - 2016-05-18; in "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", (2016), ISBN: 978-88-6655-967-2, 104.

352. K. Giering, G. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke:
"Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the IRPS 2016", (2016), 4C-4-1 - 4C-4-6 doi:10.1109/IRPS.2016.7574540.

351. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504.

350. Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the 2016 IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543.

349. M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
"Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of IRPS 2016", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644.

348. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2015), 535 - 538.

347. A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser:
"Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the 2015 IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064.

346. S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser:
"On the Temperature Behavior of Hot-Carrier Degradation";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "2015 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088.

345. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60.

344. Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser:
"Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331.

343. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651.

342. L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov:
"Experimental Evidences and Simulations of Trap Generation along a Percolation Path";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 226 - 229 doi:10.1109/ESSDERC.2015.7324755.

341. Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741.

340. B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 2015-09-14 - 2015-09-18; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754.

339. R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754.

338. H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser:
"Expanding TCAD Simulations from Grid to Cloud";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290.

337. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
"Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279.

336. P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser:
"Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 60 - 63 doi:10.1109/SISPAD.2015.7292258.

335. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254.

334. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98.

333. B. Ullmann, M. Waltl, T. Grasser:
"Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 2015-06-25 - 2015-06-26; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37.

332. G. Rzepa, W. Gös, B. Kaczer, T. Grasser:
"Characterization and Modeling of Reliability Issues in Nanoscale Devices";
Talk: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal; (invited) 2015-05-24 - 2015-05-27; in "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9, 2445 - 2448.

331. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471.

330. J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, G Groeseneken:
"NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 2F.4.1 - 2F.4.5 doi:10.1109/IRPS.2015.7112694.

329. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739.

328. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834.

327. B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
"Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706.

326. M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser:
"Electromigration Modelling of Void Nucleation in Open Cu-TSVs";
Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the IEEE 16th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100.

325. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) .

324. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778.

323. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763.

322. J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken:
"RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), ISBN: 978-1-4799-8001-7, 506 - 509 doi:10.1109/IEDM.2014.7047087.

321. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093.

320. K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke:
"NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 29 - 34 doi:10.1109/IIRW.2014.7049501.

319. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
"Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512.

318. Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511.

317. O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner:
"Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577.

316. W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567.

315. K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser:
"Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639.

314. G. Rzepa, W. Gös, G. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser:
"Physical Modeling of NBTI: From Individual Defects to Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568.

313. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570.

312. S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser:
"On the Importance of Electron-electron Scattering for Hot-carrier Degradation";
Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 2014-09-08 - 2014-09-11; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859.

311. E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Gös, T. Grasser, N. Horiguchi, G. Groeseneken:
"Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Device";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 254 - 257.

310. T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös:
"Evidence for Defect Pairs in SiON pMOSFETs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 262 - 267.

309. K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser:
"Automatic Finite Volume Discretizations Through Symbolic Computations";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2014-06-15 - 2014-06-20; in "Proc. 4th European Seminar on Computing", (2014), 192.

308. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge";
Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30.

307. M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
"Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162.

306. T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
"A unified perspective of RTN and BTI";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7.

305. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
"A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6.

304. B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser:
"Maximizing reliable performance of advanced CMOS circuits-A case study";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 2D.4.1 - 2D.4.6.

303. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8.

302. M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser:
"A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5.

301. T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G. Rott, H. Reisinger, J. Franco, B. Kaczer:
"Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620.

300. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel:
"Performance Portability Study of Linear Algebra Kernels in OpenCL";
Talk: International Workshop on OpenCL (IWOCL), Bristol, UK; 2014-05-12 - 2014-05-13; in "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7, 11 page(s) doi:10.1145/2664666.2664674.

299. K. Rupp, Ph. Tillet, A. Jungel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Talk: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 815.

298. J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken:
"Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 397 - 400 doi:10.1109/IEDM.2013.6724634.

297. T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer:
"Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637.

296. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer:
"Recent Advances in Understanding Oxide Traps in pMOS Transistors";
Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96.

295. W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser:
"Multi-Phonon Processes as the Origin of Reliability Issues";
Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 2013-10-27 - 2013-11-01; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), Vol.58/7/, 31 - 47 doi:10.1149/05807.0031ecst.

294. R. Coppeta, H. Ceric, D. Holec, T. Grasser:
"Critical thickness for GaN thin film on AlN substrate";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 133 - 136.

293. J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser:
"Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 69 - 72.

292. B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser:
"Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 94 - 97.

291. G. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser:
"Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 73 - 77.

290. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 98 - 101.

289. W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
"Understanding Correlated Drain and Gate Current Fluctuations";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 2013-09-30 - 2013-10-04; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56.

288. Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
"A method to determine the lateral trap position in ultra-scaled MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729.

287. K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel:
"A Note on the GPU Acceleration of Eigenvalue Computations";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 2013-09-21 - 2013-09-27; in "AIP Proceedings, volume 1558", (2013), 1536 - 1539.

286. S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441.

285. O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
"Direct Tunneling and Gate Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563.

284. R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
"Epitaxial Volmer-Weber Growth Modelling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570.

283. B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx:
"Experimental characterization of BTI defects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 444 - 450 doi:10.1109/SISPAD.2013.6650670.

282. F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser:
"A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 1 - 4 doi:10.1109/SISPAD.2013.6650559.

281. F. Schanovsky, W. Gös, T. Grasser:
"Advanced Modeling of Charge Trapping at Oxide Defects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 451 - 458 doi:10.1109/SISPAD.2013.6650671.

280. W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
"Understanding Correlated Drain and Gate Current Fluctuations";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56.

279. M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken:
"Degradation of time dependent variability due to interface state generation";
Talk: International Symposium on VLSI Technology, Kyoto, Japan; 2013-06-11 - 2013-06-14; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0, 190 - 191.

278. W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser:
"A Comprehensive Model for Correlated Drain and Gate Current Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 46 - 47.

277. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, Bened. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser:
"Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

276. T. Grasser:
"Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial); (invited) 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1.

275. T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer:
"Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

274. G. Pobegen, M. Nelhiebel, T. Grasser:
"Detrimental impact of hydrogen passivation on NBTI and HC degradation";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

273. P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken:
"Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 7.

272. M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser:
"Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "2012 International Electron Devices Meeting (IEDM) Technical Digest", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138.

271. T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer:
"On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "2012 International Electron Devices Meeting (IEDM) Technical Digest", (2012), 470 - 473 doi:10.1109/IEDM.2012.6479076.

270. T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
"Modeling of the bias temperature instability under dynamic stress and recovery conditions";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 2012-10-29 - 2012-11-01; in "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8, 1 - 4 doi:10.1109/ICSICT.2012.6466737.

269. G. Pobegen, M. Nelhiebel, T. Grasser:
"Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59.

268. K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser:
"Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 31 - 34.

267. S. E. Tyaginov, T. Grasser:
"Modeling of Hot-Carrier Degradation: Physics and Controversial Issues";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215.

266. P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser:
"On the Correlation Between NBTI, SILC, and Flicker Noise";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 60 - 64.

265. M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser:
"Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79.

264. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
"Reliability of SiGe Channel MOS";
Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting Abstracts", (2012), Vol.MA2012-02, 1 page(s) .

263. M. Bina, O. Triebl, Bened. Schwarz, M. Karner, B. Kaczer, T. Grasser:
"Simulation of Reliability on Nanoscale Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112.

262. K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser:
"Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 19 - 22.

261. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266.

260. S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265.

259. K. Rupp, T. Grasser, A. Jüngel:
"Recent advances in the spherical harmonics expansion of the Boltzmann transport equation";
Talk: Congresso Nationale Simai 2012, Turin, Italy; 2012-06-25 - 2012-06-28; in "Abstracts of Congresso Nationale Simai 2012", (2012), 183.

258. I. Starkov, H. Enichlmair, T. Grasser:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in "Abstract Booklet", (2012), 40.

257. J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser:
"TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors";
Talk: European Workshop on CMOS Variability, Nice, France; 2012-06-11 - 2012-06-12; in "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3, 4 page(s) .

256. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
"Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2012-05-30 - 2012-06-01; in "Proceedings of IEEE International Conference on IC Design and Technology", (2012), 1 - 4.

255. K. Rupp, P. Lagger, T. Grasser:
"Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 109 - 110.

254. T. Grasser:
"Recent Developments in Understanding the Bias Temperature Instability";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8, 315 - 322.

253. T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel:
"Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

252. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov:
"Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs";
Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

251. T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
"On the Frequency Dependence of the Bias Temperature Instability";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

250. B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, Bened. Schwarz, M. Bina, T. Grasser, G. Groeseneken:
"The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes";
Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

249. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

248. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

247. M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) .

246. I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

245. J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken:
"Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131580.

244. T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer:
"Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131624.

243. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Understanding Temperature Acceleration for NBTI";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131623.

242. K. Rupp, T. Grasser, A. Jüngel:
"On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries";
Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "2011 International Electron Devices Meeting (IEDM) Technical Digest", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131667.

241. M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser:
"Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 27 - 31.

240. B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken:
"Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; (invited) 2011-10-16 - 2011-10-20; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 32.

239. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 17 - 21.

238. R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton:
"Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 12 - 16.

237. G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1530 - 1534.

236. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), Vol.51, 1525 - 1529.

235. K. Rupp, A. Jüngel, T. Grasser:
"A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
Talk: Facing the Multicore Challenge II, Karlsruhe, Germany; 2011-09-28 - 2011-09-30; in "Proceedings of Facing the Multicore Challenge II", (2011), 11 page(s) .

234. W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; (invited) 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 153.

233. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106.

232. S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in "Proceedings of the 41st European Solid-State Device Research Conference", (2011), 151 - 154.

231. Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser:
"Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 11 - 14 doi:10.1109/SISPAD.2011.6035036.

230. K. Rupp, T. Grasser, A. Jüngel:
"Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 151 - 155 doi:10.1109/SISPAD.2011.6034964.

229. K. Rupp, T. Grasser, A. Jüngel:
"Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 147 - 150 doi:10.1109/SISPAD.2011.6034963.

228. F. Schanovsky, O. Baumgartner, T. Grasser:
"Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 15 - 18 doi:10.1109/SISPAD.2011.6035038.

227. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066.

226. S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065.

225. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251.

224. M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken:
"From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation";
Talk: Symposium on VLSI Technology, Kyoto, Japan; 2011-06-14 - 2011-06-16; in "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6, 2 page(s) .

223. W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer:
"Advanced Modeling of Oxide Defects for Random Telegraph Noise";
Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 2011-06-12 - 2011-06-16; in "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 page(s) .

222. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Modeling";
Talk: 219th ECS Meeting, Montreal, Canada; (invited) 2011-05-01 - 2011-05-06; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) .

221. J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, M. Cho, J. Mitard, L. Witters, T. Y. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser:
"On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 6 page(s) doi:10.1109/IRPS.2011.5784545.

220. T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer:
"The `Permanent´ Component of NBTI: Composition and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 9 page(s) .

219. B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, Ph. J. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken:
"Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations";
Poster: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 5 page(s) .

218. H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder:
"Understanding and Modeling AC BTI";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 8 page(s) .

217. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken:
"Response of a Single Trap to AC Negative Bias Temperature Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 8 page(s) .

216. T. Grasser:
"Charge Trapping in Oxides From RTN to BTI";
Talk: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 2011-04-10 - 2011-04-14; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 128 page(s) .

215. J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken:
"6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2010-12-06 - 2010-12-08; in "2010 International Electron Devices Meeting (IEDM) Technical Digest", (2010), 70 - 73 doi:10.1109/IEDM.2010.5703292.

214. T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel:
"Recent Advances in Understanding the Bias Temperature Instability";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2010-12-06 - 2010-12-08; in "2010 International Electron Devices Meeting (IEDM) Technical Digest", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295.

213. F. Schanovsky, W. Gös, T. Grasser:
"Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 163 - 166 doi:10.1109/IWCE.2010.5677989.

212. M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov:
"'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 76 - 79 doi:10.1109/IIRW.2010.5706490.

211. T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer:
"On the 'Permanent' Component of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 2 - 7 doi:10.1109/IIRW.2010.5706472.

210. Ph. Hehenberger, H. Reisinger, T. Grasser:
"Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11 doi:10.1109/IIRW.2010.5706473.

209. H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder:
"The Impact of Recovery on BTI Reliability Assessments";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 12 - 16 doi:10.1109/IIRW.2010.5706474.

208. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) .

207. W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
"Charge Trapping and the Negative Bias Temperature Instability";
Talk: 218th ECS Meeting, Las Vegas, USA; 2010-10-10 - 2010-10-15; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) .

206. C. Schlünder, H. Reisinger, W. Gustin, T. Grasser:
"A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery";
Talk: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 2010-09-13 - 2010-09-15; in "GMM- Fachbericht", (2010), Vol.66, 33 - 40.

205. F. Schanovsky, W. Gös, T. Grasser:
"Hole Capture into Oxide Defects in MOS Structures from First Principles";
Poster: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in "Abstract Book", (2010), 435.

204. K. Rupp, T. Grasser, A. Jüngel:
"System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 159 - 162 doi:10.1109/SISPAD.2010.5604542.

203. I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144.

202. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345.

201. P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer:
"Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 134 - 138.

200. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; (invited) 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 55.

199. F. Schanovsky, W. Gös, T. Grasser:
"Mulit-Phonon Hole-Trapping from First-Principles";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 54.

198. I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128.

197. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 28.

196. T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter:
"Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 1063 - 1068.

195. J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser:
"Improvements of NBTI Reliability in SiGe p-FETs";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 1082 - 1085.

194. T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös:
"The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 16 - 25.

193. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger:
"Origin of NBTI Variability in Deeply Scaled pFETs";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 26 - 32.

192. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 1073 - 1077.

191. H. Reisinger, T. Grasser, C. Schlunder, W. Gustin:
"The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 7 - 15.

190. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Recovery-Free Electron Spin Resonance Observations of NBTI Degradation";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 43 - 49.

189. K. Rupp, T. Grasser, A. Jüngel:
"A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: Junior Scientist Conference 2010 (JSC 2010), Wien; 2010-04-07 - 2010-04-09; in "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9, 7 - 8.

188. T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer:
"Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise";
Talk: International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 2009-12-07 - 2009-12-09; in "2009 International Electron Devices Meeting (IEDM) Technical Digest", (2009), 1 - 4 doi:10.1109/IEDM.2009.5424235.

187. B. Bindu, W. Gös, B. Kaczer, T. Grasser:
"Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 93 - 96.

186. H. Reisinger, T. Grasser, C. Schlünder:
"A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 30 - 35.

185. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 42 - 45.

184. R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser:
"On the Thermal Activation of Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8, 36 - 41.

183. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 page(s) .

182. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), .

181. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation";
Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 2009-09-14 - 2009-09-18; in "Proceedings of the 39th European Solid-State Device Research Conference", (2009), ISBN: 978-1-4244-4351-2, 311 - 314.

180. W. Gös, T. Grasser, M. Karner, B. Kaczer:
"A Model for Switching Traps in Amorphous Oxides";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 159 - 162 doi:10.1109/SISPAD.2009.5290226.

179. I. Starkov, S. E. Tyaginov, T. Grasser:
"Green´s Function Asymptotic in Two-Layered Periodic Medium";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112.

178. P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme:
"Possible Correlation between Flicker Noise and Bias Temperature Stress";
Talk: International Conference on Noise and Fluctuations (ICNF), Pisa; 2009-06-14 - 2009-06-19; in "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), 621 - 624.

177. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93.

176. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156.

175. T. Grasser, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability";
Talk: 215th ECS Meeting, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213, 793.

174. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Talk: International Reliability Physics Symposium (IRPS), Montreal; (invited) 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 1.

173. T. Aichinger, M. Nelhiebel, T. Grasser:
"Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 2 - 7.

172. T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"A Two-Stage Model for Negative Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 33 - 44.

171. Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel:
"Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique";
Poster: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 1033 - 1038.

170. B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken:
"NBTI from the Perspective of Defect States with Widely Distributed Time Scales";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 55 - 60.

169. S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
"Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 514 - 522.

168. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), .

167. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84.

166. T. Grasser:
"Towards Understanding Negative Bias Temperature Instability";
IEEE Conference Proceedings, in "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", (2008), 145 doi:10.1109/IRWS.2008.4796110.

165. T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel:
"Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2008-10-18 - 2008-10-22; in "2008 IEEE International Integrated Reliability Workshop Final Report", (2008), 91 - 95.

164. H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2008-10-18 - 2008-10-22; in "2008 IEEE International Integrated Reliability Workshop Final Report", (2008), 1 - 6.

163. T. Grasser, B. Kaczer, W. Gös:
"An Energy-Level Perspective of Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; (invited) 2008-09-29 - 2008-10-02; in "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008), .

162. W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser:
"Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239.

161. T. Grasser, W. Gös, B. Kaczer:
"Modeling Bias Temperature Instability During Stress and Recovery";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 65 - 68 doi:10.1109/SISPAD.2008.4648238.

160. M. Vasicek, J. Cervenka, M. Karner, T. Grasser:
"Consistent Higher-Order Transport Models for SOI MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 129 - 132 doi:10.1109/SISPAD.2008.4648254.

159. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254.

158. T. Grasser:
"Negative Bias Temperature Instability: Modeling Challenges and Perspectives";
Talk: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 2008-04-27 - 2008-05-01; in "2008 Reliability Physics Tutorial Notes", (2008), 113 - 120.

157. T. Grasser, B. Kaczer, W. Gös:
"An Energy-Level Perspective of Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2008-04-27 - 2008-05-01; in "Proceedings of the International Reliability Physics Symposium", (2008), 28 - 38.

156. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O´Connor, B. O´Sullivan, G. Groeseneken:
"Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2008-04-27 - 2008-05-01; in "Proceedings of the International Reliability Physics Symposium", (2008), 20 - 27.

155. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"A 2D-Non-Parabolic Six Moments Model";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

154. T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder:
"Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2007-12-10 - 2007-12-12; in "2007 International Electron Devices Meeting (IEDM) Technical Digest", (2007), ISBN: 1-4244-1508-x, 801 - 804 doi:10.1109/IEDM.2007.4419069.

153. W. Gös, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "2007 IEEE International Integrated Reliability Workshop Final Report", (2007), ISBN: 1-4244-1171-8, 27 - 32.

152. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "2007 IEEE International Integrated Reliability Workshop Final Report", (2007), ISBN: 1-4244-1171-8, 6 - 11.

151. M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser:
"Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 96 - 97.

150. W. Gös, T. Grasser:
"First-Principles Investigation on Oxide Trapping";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 157 - 160 doi:10.1007/978-3-211-72861-1_38.

149. H. Kosina, O. Triebl, T. Grasser:
"Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76.

148. M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser:
"Modeling of Macroscopic Transport Parameters in Inversion Layers";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48.

147. T. Grasser, B. Kaczer:
"Negative Bias Temperature Instability: Recoverable versus Permanent Degradation";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1124-6, 127 - 130.

146. O. Triebl, T. Grasser:
"Investigation of Vector Discretization Schemes for Box Volume Methods";
Talk: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-20 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), Vol.3, ISBN: 1-4200-6184-4, 61 - 64.

145. O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina:
"Adaptive Energy Integration of Non-Equilibrium Green´s Functions";
Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-19 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), Vol.3, ISBN: 1-4200-6184-4, 145 - 148.

144. T. Grasser, W. Gös, V. Sverdlov, B. Kaczer:
"The Universality of NBTI Relaxation and its Implications for Modeling and Characterization";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2007-04-15 - 2007-04-19; in "45th Annual International Reliability Physics Symposium", (2007), ISBN: 1-4244-0919-5, 268 - 280.

143. W. Grabinski, T. Grasser, G. Gildenblat, G.-J. Smit, M. Bucher, A. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T.A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Prégaldiny, CH. Lallement, L. Lemaitre:
"MOS-AK: Open Compact Modeling Forum";
Talk: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan; (invited) 2007-01-23 in "The 4th International Workshop on Compact Modeling", (2007), 1 - 11.

142. M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser:
"Power Output Improvement of SiGe Thermoelectric Generators";
Talk: Meeting of the Electrochemical Society (ECS), Cancun; 2006-10-29 - 2006-11-03; in "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

141. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr:
"Performance Analysis for High-Precision Interconnect Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Toulouse; 2006-10-23 - 2006-10-25; in "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9, 113 - 116.

140. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"A Generic Discretization Library";
Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 2006-10-22 - 2006-10-26; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 95 - 100.

139. T. Grasser, W. Gös, B. Kaczer:
"Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2006-10-16 - 2006-10-19; in "2006 IEEE International Integrated Reliability Workshop Final Report", (2006), ISBN: 1-4244-0297-2, 5 - 10.

138. S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr:
"An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 2006-09-27 - 2006-09-29; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244.

137. O. Triebl, T. Grasser:
"Vector Discretization Schemes Based on Unstructured Neighbourhood Information";
Talk: International Semiconductor Conference CAS, Sinaia; 2006-09-27 - 2006-09-29; in "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7, 337 - 340.

136. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833.

135. T. Grasser, R. Entner, O. Triebl, H. Enichlmair:
"TCAD Modeling of Negative Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 330 - 333 doi:10.1109/SISPAD.2006.282902.

134. H. Kosina, V. Sverdlov, T. Grasser:
"Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908.

133. M. Wagner, G. Span, S. Holzer, T. Grasser:
"Design Optimization of Large Area Si/SiGe Thermoelectric Generators";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 397 - 400 doi:10.1109/SISPAD.2006.282918.

132. G. Span, M. Wagner, S. Holzer, T. Grasser:
"Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions";
Talk: International Conference on Thermoelectrics, Vienna; 2006-08-06 - 2006-08-10; in "International Conference on Thermoelectrics", (2006), Vol.6, ISBN: 1-4244-0811-3, 23 - 28.

131. S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr:
"A Multi-Purpose Optimization Framework for TCAD Applications";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 76.

130. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"A Generic Approach to Scientific Computing";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 137.

129. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Automatic Linearization using Functional Programming for Scientific Computing";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 147.

128. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Performance Aspects of a DSEL for Scientific Computing with C++";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 2006-07-03 - 2006-07-07; in "Proceedings of the POOSC Conference", (2006), 37 - 41.

127. S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr:
"Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157.

126. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97.

125. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser:
"Comparison of Deposition Models for TEOS CVD Process";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 158 - 159.

124. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP-A Gate Stack Analyzer";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102.

123. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Talk: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa; (invited) 2006-06-25 - 2006-06-28; in "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), 1 - 2.

122. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A High Performance Generic Scientific Simulation Environment";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 61.

121. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"Advanced Equation Processing for TCAD";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 64.

120. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"A Computational Framework for Topological Operations";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 57.

119. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154.

118. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Influence of Interface and Oxide Traps on Negative Bias Temperature Instability";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164.

117. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256.

116. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30.

115. M. Wagner, T. Grasser, M. Karner, H. Kosina:
"Quantum Correction for DG MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88.

114. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"High Performance Process and Device Simulation with a Generic Environment";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) .

113. A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) .

112. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73.

111. M. Wagner, G. Span, T. Grasser:
"Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content";
Talk: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 216 - 217.

110. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD";
Poster: The Nanotechnology Conference and Trade Show, Boston; 2006-05-07 - 2006-05-11; in "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1, 526 - 529.

109. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 173 - 176.

108. P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 365 - 370.

107. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Investigation of NBTI Recovery During Measurement";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111.

106. M. Karner, M. Wagner, T. Grasser, H. Kosina:
"A Physically Based Quantum Correction Model for DG MOSFETs";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105.

105. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Process and Device Simulation With a Generic Scientific Simulation Environment";
Talk: International Conference on Microelectronics (MIEL), Beograd; 2006-04-14 - 2006-04-17; in "Proceedings International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 475 - 478.

104. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Concepts for High Performance Generic Scientific Computing";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-9.

103. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 5-1 - 5-8.

102. M. Wagner, M. Karner, T. Grasser:
"Quantum Correction Models for Modern Semiconductor Devices";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Semiconductor Devices", (2005), Vol.Vol. 1, 458 - 461.

101. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-26 - 2005-10-28; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 425 - 429.

100. E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"Three-Dimensional State-Of-The-Art Topography Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 430 - 432.

99. P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 469 - 473.

98. M. Spevak, T. Grasser:
"Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 474 - 478.

97. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512.

96. R. Heinzl, T. Grasser:
"Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 211 - 214 doi:10.1109/SISPAD.2005.201510.

95. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 235 - 238 doi:10.1109/SISPAD.2005.201516.

94. A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 187 - 190 doi:10.1109/SISPAD.2005.201504.

93. G. Span, M. Wagner, T. Grasser:
"Thermoelectric Power Generation Using Large Area pn-Junctions";
Talk: European Conference on Thermoelectrics (ECT), Nancy; 2005-09-01 - 2005-09-02; in "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), 72 - 75.

92. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol.Vol. 1, ISBN: 0-7803-9345-7, 175 - 178.

91. A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr:
"Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol.Vol. 2, ISBN: 0-7803-9345-7, 279 - 282.

90. H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr:
"Comprehensive Analysis of Vacancy Dynamics Due to Electromigration";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103.

89. Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr:
"Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts";
Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol.Vol. 2, ISBN: 3-901167-12-9, 637 - 640.

88. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Sevilla; 2005-05-09 - 2005-05-11; in "VLSI Circuits and Systems II", (2005), ISBN: 0-8194-5832-5, 380 - 387.

87. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48.

86. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis";
Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623.

85. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 25 - 28.

84. A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Level Set Method Based General Topography Simulator and its Application in Interconnect Processes";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707, 139 - 142.

83. S. Wagner, T. Grasser, S. Selberherr:
"Physical Modeling of Semiconductor Devices for Microwave Applications";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

82. W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

81. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308.

80. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69.

79. H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78.

78. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1.

77. T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26.

76. S. Wagner, T. Grasser, S. Selberherr:
"Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 351 - 354 doi:10.1007/978-3-7091-0624-2_83.

75. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

74. T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
"SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477.

73. T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
"Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77.

72. S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493.

71. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Concepts and Implementation of an Advanced Equation Assembly Module";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2004-07-18 - 2004-07-21; in "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2, 150 - 155.

70. S. Wagner, T. Grasser, S. Selberherr:
"Benchmarking Linear Solvers with Semiconductor Simulation Examples";
Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 2004-06-30 - 2004-07-02; in "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 page(s) .

69. S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin; (invited) 2004-06-24 - 2004-06-26; in "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7, 36 - 41.

68. A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
"Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
Talk: International Conference on Microelectronics (MIEL), Nis; 2004-05-16 - 2004-05-19; in "2004 International Conference on Microelectronics", (2004), ISBN: 0-7803-8166-1, 241 - 244.

67. R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), Vol.1, ISBN: 0-7803-8422-9, 114 - 117.

66. R. Kosik, T. Grasser, R. Entner, K. Dragosits:
"On the Highest Order Moment Closure Problem";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), Vol.1, ISBN: 0-7803-8422-9, 118 - 120.

65. S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
"Optimization and Inverse Modeling for TCAD Applications";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116.

64. S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838.

63. T. Grasser:
"Closure Relations for Macroscopic Transport Models";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington; (invited) 2003-12-10 - 2003-12-12; in "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4, 504 - 505.

62. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Generally Applicable Approach for Advanced Equation Assembling";
Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 2003-11-03 - 2003-11-05; in "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6, 494 - 499.

61. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced Equation Assembling Techniques for Numerical Simulators";
Talk: European Simulation and Modeling Conference (ESMC), Naples; 2003-10-27 - 2003-10-29; in "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x, 390 - 394.

60. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Simulator Module for Advanced Equation Assembling";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 55 - 64.

59. J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382.

58. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 383 - 388.

57. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202, 263 - 268.

56. T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 581 - 584.

55. R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters Using Inverse Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 363 - 366.

54. T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556.

53. T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 63 - 66 doi:10.1109/SISPAD.2003.1233638.

52. J.M. Park, T. Grasser, S. Selberherr:
"High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 273 - 282.

51. A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134.

50. T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 105 - 108.

49. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51.

48. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

47. S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 83 - 84.

46. S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0, 50 - 55 doi:10.1109/EDMO.2002.1174929.

45. R. Klima, T. Grasser, S. Selberherr:
"Controlling Scheme of the Device Simulator MINIMOS-NT";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 80 - 84.

44. V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3, 303 - 306.

43. R. Klima, T. Grasser, S. Selberherr:
"The Control System of the Device Simulator MINIMOS-NT";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 281 - 284.

42. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 235 - 238 doi:10.1109/SISPAD.2002.1034560.

41. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 195 - 198 doi:10.1109/SISPAD.2002.1034550.

40. T. Grasser, A. Gehring, S. Selberherr:
"Macroscopic Transport Models for Microelectronics Devices";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 2002-07-14 - 2002-07-18; in "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1, 223 - 228.

39. A. Gehring, T. Grasser, S. Selberherr:
"Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 560 - 563.

38. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"An Impact Ionization Model Including an Explicit Cold Carrier Population";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 572 - 575.

37. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
"The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 544 - 547.

36. T. Grasser, A. Gehring, S. Selberherr:
"Recent Advances in Transport Modeling for Miniaturized CMOS Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba; (invited) 2002-04-17 - 2002-04-19; in "Proceedings of the ICCDCS 2002", (2002), Vol.D027, ISBN: 0-7803-7380-4, 1 - 8.

35. T. Grasser, S. Selberherr:
"Limitations of Hydrodynamic and Energy-Transport Models";
Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; (invited) 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 584 - 591.

34. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 664 - 667.

33. A. Gehring, T. Grasser, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263.

32. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"Numerical Study of Partial-SOI LDMOSFET Power Devices";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117.

31. V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x, 187 - 191 doi:10.1109/EDMO.2001.974305.

30. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
Talk: International Conference on Nanotechnology, Maui; 2001-10-28 - 2001-10-30; in "Proceedings Conf. on Nanotechnology", (2001), ISBN: 0-7803-7215-8, 201 - 206 doi:10.1109/NANO.2001.966419.

29. H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M. Giles, S. Selberherr:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 2001-09-15 - 2001-09-18; in "Book of Abstracts of the 8th International Workshop on Computational Electronics (IWCE)", (2001), 67.

28. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
"Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in "Proceedings of the 31st European Solid-State Device Research Conference", (2001), ISBN: 2-914601-01-8, 215 - 218.

27. A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr:
"TCAD Analysis of Gain Cell Retention Time for SRAM Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 416 - 419 doi:10.1007/978-3-7091-6244-6_96.

26. T. Grasser, H. Kosina, S. Selberherr:
"An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 46 - 49 doi:10.1007/978-3-7091-6244-6_10.

25. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 54 - 57 doi:10.1007/978-3-7091-6244-6_12.

24. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Boundary Condition Models for Terminal Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 152 - 155 doi:10.1007/978-3-7091-6244-6_34.

23. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 428 - 431 doi:10.1007/978-3-7091-6244-6_99.

22. R. Klima, T. Grasser, S. Selberherr:
"Controlling TCAD Applications with an Object-Oriented Dynamic Database";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 161 - 165.

21. A. Wolf, T. Grasser, S. Selberherr:
"Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 314 - 318.

20. T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Talk: Ultra Shallow Junctions Conference, Napa; (invited) 2001-04-22 - 2001-04-26; in "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), 4 - 11.

19. T. Grasser:
"Simulation of Semiconductor Devices and Circuits at High Frequencies";
Talk: GMe Forum 2001, Wien; (invited) 2001-04-05 - 2001-04-06; in "Proceedings of the GMe Forum", (2001), 91 - 96.

18. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"A Simulation Study of Partially Depleted SOI MOSFETs";
Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1, 181 - 186.

17. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 474 - 477.

16. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko; (invited) 2001-02-12 - 2001-02-17; in "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8, 19 - 30.

15. R. Klima, T. Grasser, T. Binder, S. Selberherr:
"Controlling TCAD Applications with a Dynamic Database";
Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 2000-11-06 - 2000-11-09; in "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7, 103 - 112.

14. T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 2000-10-10 - 2000-10-14; in "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6, 43 - 52.

13. T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the 30th European Solid-State Device Research Conference", (2000), ISBN: 2-86332-248-6, 324 - 327 doi:10.1109/ESSDERC.2000.194780.

12. V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the 30th European Solid-State Device Research Conference", (2000), ISBN: 2-86332-248-6, 608 - 611 doi:10.1109/ESSDERC.2000.194851.

11. R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the 5th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 74 - 77 doi:10.1109/SISPAD.2000.871210.

10. T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2000-05-14 - 2000-05-17; in "22nd International Conference on Microelectronics", (2000), ISBN: 0-7803-5235-1, 35 - 42.

9. R. Quay, R. Reuter, T. Grasser, S. Selberherr:
"Thermal Simulations of III/V HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x, 87 - 92.

8. T. Grasser, H. Kosina, S. Selberherr:
"Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the 4th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 151 - 154 doi:10.1109/SISPAD.1999.799283.

7. T. Grasser, S. Selberherr, K. Tsueno, H. Masuda:
"Mobility Parameter Tuning for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in "Proceedings ESSDERC 98 Conf.", (1998), ISBN: 2-86332-234-6, 336 - 339.

6. T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the 3rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 247 - 250 doi:10.1007/978-3-7091-6827-1_62.

5. T. Grasser, R. Strasser, M. Knaipp, K. Tsueno, H. Masuda, S. Selberherr:
"Device Simulator Calibration for Quartermicron CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the 3rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 93 - 96 doi:10.1007/978-3-7091-6827-1_26.

4. G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
"A Physically-Based Electron Mobility Model for Silicon Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the 3rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 312 - 315 doi:10.1007/978-3-7091-6827-1_78.

3. T. Grasser, R. Strasser, M. Knaipp, H. Masuda, S. Selberherr:
"Calibration of a Mobility Model for Quartermicron CMOS Devices";
Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6, 75 - 77.

2. V. Palankovski, T. Grasser, S. Selberherr:
"SiGe HBT in Mixed-Mode Device and Circuit Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156.

1. M. Knaipp, T. Grasser, S. Selberherr:
"A Physically Based Substrate Current Simulation";
Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in "Proceedings ESSDERC 97 Conf.", (1997), ISBN: 2-86332-221-4, 196 - 199.


Talks and Poster Presentations (without Proceedings-Entry)


38. C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
"The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures";
Talk: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 2015-12-02 - 2015-12-05; .

37. T. Grasser:
"Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions";
Talk: IEEE EDS Distinguished Lecture, Hiroshima, Japan; (invited) 2015-08-26.

36. T. Grasser:
"Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
Talk: Kyoto Institute of Technology, Kyoto, Japan; (invited) 2015-08-24.

35. T. Grasser:
"Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
Talk: D2T Symposium, Tokyo, Japan; (invited) 2015-08-21.

34. T. Grasser:
"Oxide Defects in MOS Transistors: Characterization and Modeling";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Kinsale, Ireland; (invited) 2015-06-09 - 2015-06-11; .

33. T. Grasser:
"Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment";
Talk: CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland; (invited) 2015-04-08 - 2015-04-10; .

32. K. Rupp, A. Jüngel, T. Grasser:
"A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC";
Talk: Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA; 2015-03-22 - 2015-03-27; .

31. K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel:
"ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method";
Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 2015-03-11 - 2015-03-13; .

30. T. Grasser:
"Oxide Defects in MOS Transistors: Characterization and Modeling";
Talk: IEEE EDS Distinguished Lecture, Aranjuez, Spain; (invited) 2015-02-11.

29. T. Grasser:
"Characterization and Modeling of Charge Trapping and Hot Carrier Degradation";
Talk: IEEE EDS Distinguished Lecture, Agrate Brianza, Italy; (invited) 2014-12-11.

28. T. Grasser:
"Characterization and Modeling of Charge Trapping in CMOS Transistors";
Talk: International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy; (invited) 2014-10-02 - 2014-10-03; .

27. T. Grasser:
"Bias Temperature Instability in CMOS Nanodevices";
Talk: SINANO Summer School, Bertinoro, Italy; (invited) 2014-08-25 - 2014-08-29; .

26. T. Grasser:
"Aging in CMOS Devices: From Microscopic Physics to Compact Models";
Talk: The 2012 Forum on Specification & Design Languages, Vienna, Austria; (invited) 2012-09-18 - 2012-09-20; .

25. F. Schanovsky, T. Grasser:
"Bias Temperature Instabilities in highly-scaled MOSFETs";
Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; .

24. T. Grasser:
"Modeling of Device Reliability";
Talk: Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland; 2011-09-12 - 2011-09-16; .

23. T. Grasser:
"Oxide Defects: From Microscopic Physics to Compact Models";
Talk: SISPAD Workshop, Osaka, JAPAN; 2011-09-08 - 2011-09-10; .

22. T. Grasser:
"Cause, Detection, and Impact of Charge Trapping on Aging";
Talk: VLSI Symposium Short Course, Kyoto, Japan; 2011-06-14 - 2011-06-18; .

21. J. Franco, B. Kaczer, J. Mitard, G. Eneman, Ph. J. Roussel, F. Crupi, T. Grasser, L. Witters, T. Y. Hoffmann, G. Groeseneken:
"Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs";
Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 2010-12-02 - 2010-12-04; .

20. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, R. Degraeve, J. Franco, T. Kauerauf, T. Grasser, G. Groeseneken:
"Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress";
Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 2010-12-02 - 2010-12-04; .

19. T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, B. Kaczer:
"The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta; (invited) 2010-10-11.

18. T. Grasser:
"Recent Developments in Device Reliability Modeling";
Talk: MOS-AK ESSDERC Companion Workshop, Seville; (invited) 2010-09-17.

17. T. Grasser:
"Statistical Reliability in Nanoscale Devices";
Talk: SISPAD Workshop, Bologna; (invited) 2010-09-08.

16. T. Grasser:
"Transport Modeling in Modern Semiconductor Devices";
Talk: CoMoN Workshop 2010, Tarragona; (invited) 2010-06-30 - 2010-07-01; .

15. T. Grasser:
"Characterization and Modeling of the Negative Bias Temperature Instability";
Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", Duisburg; (invited) 2010-03-18 - 2010-03-19; .

14. J. Franco, B. Kaczer, A. Stesmans, V. Afanas´Ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken:
"Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs";
Talk: 40th Semiconductor Interface Specialists Conference (SISC), Washington; 2009-12-03 - 2009-12-05; .

13. T. Grasser:
"Physical Mechanisms and Modeling of the Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2009-10-05 - 2009-10-09; .

12. T. Grasser:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Cambridge; (invited) 2009-06-29 - 2009-07-01; .

11. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; 2008-09-29 - 2008-10-02; .

10. T. Grasser:
"Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation";
Talk: 3rd SINANO Device Modeling Summer School, Bertinoro, Italy; 2008-09-01 - 2008-09-05; .

9. K. Martens, B. Kaczer, T. Grasser, B. De Jaeger, M. Meuris, G. Groeseneken, H.E. Maes:
"Charge Pumping Charcaterization of Germanium MOSFETs";
Talk: Semiconductor Interface Specialists Conference (SISC), Arlington; 2007-12-06 - 2007-12-08; .

8. T. Grasser, M. Vasicek, M. Wagner:
"Higher-Order Moment Models for Engineering Applications";
Talk: Equadiff, Wien; 2007-08-05 - 2007-08-11; .

7. T. Grasser:
"Mixed Mode Device/Circuit Simulation";
Talk: MOS-AK ESSDERC Companion Workshop, Grenoble; (invited) 2005-09-16.

6. T. Grasser:
"Higher-Order Moment Models for Engineering Applications";
Talk: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano; (invited) 2005-02-17 - 2005-02-18; .

5. A. Sheikholeslami, C. Heitzinger, E. Al-Ani, R. Heinzl, T. Grasser, S. Selberherr:
"Three-Dimensional Surface Evolution Using a Level Set Method";
Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 2004-12-01.

4. T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08; .

3. S. Wagner, T. Grasser, S. Selberherr:
"Evaluation of Linear Solver Modules for Semiconductor Device Simulation";
Talk: International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara; (invited) 2004-06-02 - 2004-06-04; .

2. T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; .

1. T. Grasser:
"Simulation of SOI-Devices";
Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", München; (invited) 2001-05-17 - 2001-05-18; .


Habilitation Theses


1. T. Grasser:
"Simulation of Miniaturized Semiconductor Devices";
Technische Universität Wien/Fakultät für Elektrotechnik und Informationstechnik, (2002), .


Doctor's Theses (authored and supervised)


22. R. Stradiotto:
"Characterization of Electrically Active Defects at III-N/Dielectric Interfaces";
Reviewer: T. Grasser, G. Meneghesso; E360, 2016, oral examination: 2016-12-16.

21. M. Waltl:
"Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
Reviewer: T. Grasser, D. Schmitt-Landsiedel; E360, 2016, oral examination: 2016-09-09.

20. R. Coppeta:
"Dislocation Modeling in III-Nitrides";
Reviewer: T. Grasser, A. Köck; E360, 2015, oral examination: 2016-06-15.

19. Yu. Illarionov:
"Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors";
Reviewer: T. Grasser, L. Larcher; E360, 2015, oral examination: 2015-12-18.

18. M. Bina:
"Charge Transport Models for Reliability Engineering of Semiconductor Devices";
Reviewer: T. Grasser, C. Jungemann; E360, 2014, oral examination: 2014-03-25.

17. G. Pobegen:
"Degradation of electrical parameters of power semiconductor devices - process influences and modeling";
Reviewer: T. Grasser, P. Hadley; E360, 2013, oral examination: 2013-12-05.

16. F. Schanovsky:
"Atomistic Modeling in the Context of the Bias Temperature Instability";
Reviewer: T. Grasser, A. Schenk; E360, 2013, oral examination: 2013-03-19.

15. I. Starkov:
"Comprehensive Physical Modeling of Hot-Carrier Induced Degradation";
Reviewer: T. Grasser, M. Gröschl; E360, 2013, oral examination: 2013-01-14.

14. Rui Huang:
"Stress and Microstructural Evolution of Electroplated Copper Films";
Reviewer: T. Grasser, G. Dehm; E360, 2013, oral examination: 2013-01-09.

13. O. Triebl:
"Reliability Issues in High Voltage Semiconductor Devices";
Reviewer: T. Grasser, M. Gröschl; E360, 2012, oral examination: 2012-10-24.

12. W. Gös:
"Hole Trapping and the Negative Bias Temperature Instability";
Reviewer: T. Grasser, D. Süss; E360, 2011, oral examination: 2012-12-22.

11. K. Rupp:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
Reviewer: T. Grasser, C. Jungemann; E360, 2011, oral examination: 2011-12-19.

10. Ph. Hehenberger:
"Advanced Characterization of the Bias Temperature Instability";
Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011, oral examination: 2011-12-14.

9. T. Aichinger:
"On the Role of Hydrogen in Silicon Device Degradation and Metalization Processing";
Reviewer: T. Grasser, H. Hutter; Institut für Mikroelektronik, 2010, oral examination: 2010-09-01.

8. M. Vasicek:
"Advanced Macroscopic Transport Models";
Reviewer: T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009, oral examination: 2009-10-12.

7. M. Wagner:
"Simulation of Thermoelectric Devices";
Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2007, oral examination: 2007-12-18.

6. R. Entner:
"Modeling and Simulation of Negative Bias Temperature Instability";
Reviewer: T. Grasser, G. Magerl; Institut für Mikroelektronik, 2007, oral examination: 2007-08-13.

5. S. Holzer:
"Optimization for Enhanced Thermal Technology CAD Purposes";
Reviewer: T. Grasser, H. Schichl; Institut für Mikroelektronik, 2007, oral examination: 2007-06-28.

4. S. Wagner:
"Small-Signal Device and Circuit Simulation";
Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2005, oral examination: 2005-04-22.

3. J. Cervenka:
"Three-Dimensional Mesh Generation for Device and Process Simulation";
Reviewer: T. Grasser, H. Haas; Institut für Mikroelektronik, 2004, oral examination: 2004-10-20.

2. R. Kosik:
"Numerical Challenges on the Road to NanoTCAD";
Reviewer: T. Grasser, Ch. Schmeiser; Institut für Mikroelektronik, 2004, oral examination: 2004-09-09.

1. T. Grasser:
"Mixed-Mode Device Simulation";
Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1999, oral examination: 1999-05-21.


Diploma and Master Theses (authored and supervised)


21. M. Bellini:
"Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide";
Supervisor: T. Grasser, M. Jech; 2017, 2017, final examination: 2017-03-09.

20. T. Knobloch:
"Characterization and Physical Modeling of Degradation in MoS2 Transistors";
Supervisor: T. Grasser, G. Rzepa; E360, 2016, final examination: 2016-10-07.

19. M. Huymajer:
"Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS";
Supervisor: T. Grasser, M. Waltl; E360, 2016, final examination: 2016-06-16.

18. B. Stampfer:
"Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model";
Supervisor: T. Grasser, A. Grill; E360, 2016, final examination: 2016-01-22.

17. G. Rzepa:
"Microscopic Modeling of NBTI in MOS Transistors";
Supervisor: T. Grasser, W. Gös; E360, 2013, final examination: 2013-11-20.

16. M. Braitner:
"Erstellung und Verifikation von Modellen für Leistungs-MOSFETs für die quantitative EMV-Simulation";
Supervisor: T. Grasser, P.-J. Wagner; E360, 2012, final examination: 2012-01-13.

15. M. Waltl:
"Change Point Detection in Time Dependent Defect Spectroscopy Data";
Supervisor: T. Grasser, P.-J. Wagner; E360, 2011, final examination: 2011-11-25.

14. P. Lagger:
"Scattering Operators for the Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Supervisor: T. Grasser, K. Rupp; E360, 2011, final examination: 2011-10-07.

13. Bened. Schwarz:
"Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model";
Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011, final examination: 2011-06-17.

12. M. Bina:
"Simulation of Interface States Generated During Stress in MOSFETs";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2010, final examination: 2010-04-23.

11. Z. Stanojevic:
"Simulation of Carrier Transport in Ultra-Thin-Body Devices";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2009, final examination: 2009-06-19.

10. F. Schanovsky:
"Dispersive Transport Modeling within the Multiple Trapping Framework";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2008, final examination: 2008-03-14.

9. O. Baumgartner:
"Simulation of Quantum Transport Using the Non-Equilibrium Green´s Functions Formalism";
Supervisor: T. Grasser, M. Karner; Institut für Mikroelektronik, 2007, final examination: 2007-01-18.

8. M. Karner:
"Multi-Dimensional Simulation of Closed Quantum Systems";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, .

7. M. Spevak:
"Simulation of Rotationally Symmetric Semiconductor Devices";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, .

6. M. Wagner:
"A Base Library for Full Band Monte Carlo Simulations";
Supervisor: T. Grasser, H. Kosina; Institut für Mikroelektronik, 2004, .

5. R. Entner:
"Three-Dimensional Device Simulation with MINIMOS-NT Using the Wafer-State-Server";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2003, .

4. M. Bacher:
"Implementierung einer Client/Server-Architektur mit Graphischer Benutzeroberfläche als Verteilte Anwendung";
Supervisor: E. Langer, T. Grasser; Institut für Mikroelektronik, 2002, .

3. S. Wagner:
"The Minimos-NT Linear Equation Solving Module";
Supervisor: S. Selberherr, T. Grasser; Institut für Mikroelektronik, 2001, .

2. M. Gritsch:
"Implementation of a Non-Parabolic Energy-Transport Model";
Supervisor: H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999, .

1. T. Grasser:
"Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, .


Scientific Reports


12. T. Grasser:
"Verification and Validation of the Coupled HCI & NBTI Model for HV Devices";
(2010), 20 page(s) .

11. T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl:
"Customized Software Development Report";
(2010), 22 page(s) .

10. H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr:
"VISTA Status Report I";
(2008), 38 page(s) .

9. T. Grasser:
"Report on Coupled NBTI and HC Models for HV Devices";
(2008), 24 page(s) .

8. T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky:
"3 Year Report 2005-2007";
(2007), 34 page(s) .

7. D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina:
"Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits";
(2007), 107 page(s) .

6. M. Vasicek, T. Grasser:
"Higher-Order Macroscopic Transport Models";
(2007), 2 page(s) .

5. T. Grasser, M. Gritsch, C. Heitzinger, A. Hössinger, S. Selberherr:
"VISTA Status Report II";
(2001), 25 page(s) .

4. K. Dragosits, T. Grasser, R. Strasser, S. Selberherr:
"VISTA Status Report I";
(1999), 31 page(s) .

3. T. Grasser, A. Hössinger, R. Kosik, R. Mlekus, W. Pyka, M. Stockinger, S. Selberherr:
"VISTA Status Report II";
(1999), 58 page(s) .

2. K. Dragosits, T. Grasser, H. Kosina, R. Mlekus, W. Pyka, S. Selberherr:
"VISTA Status Report I";
(1998), 19 page(s) .

1. T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr:
"VISTA Status Report II";
(1997), 36 page(s) .