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Publication list for
Yury Illarionov
as author or essentially involved person

43 records


Books and Editorships


1. Yu. Illarionov:
"Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
Typography of St-Petersburg State Polytechnical University, St. Petersburg, (2014), 20 page(s) .


Publications in Scientific Journals


19. Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials, 4, (2017), 1 - 10 doi:10.1088/2053-1583/aa734a.

18. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications, 1, (2017), 1 - 7 doi:10.1038/s41699-017-0025-3.

17. M. Vexler, Yu. Illarionov, I. Grekhov:
"Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling";
Semiconductors (Physics of Semiconductor Devices), 51, (2017), 444 - 448 doi:10.1134/S1063782617040224.

16. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004.

15. Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814.

14. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03.

13. X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
"Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032.

12. M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov:
"Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures";
Technical Physics Letters, 42, (2016), 1090 - 1093 doi:10.1134/S1063785016110109.

11. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
"Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433.

10. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704.

9. Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
"TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015.

8. M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser:
"Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207.

7. Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
"An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs";
Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22.

6. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
Applied Physics Letters, 105, (2014), 1435071 - 1435075.

5. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
"Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes";
Journal of Applied Physics, 115, (2014), 223706-1 - 223706-5 doi:10.1063/1.4882375.

4. S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
"Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric";
Journal of Computational Electronics, 1, (2014), 1 - 6 doi:10.1007/s10825-014-0593-9.

3. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
"Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2 nm) fluoride layer";
Thin Solid Films, 545, (2013), 580 - 583 doi:10.1016/j.tsf.2013.07.050.

2. G.G. Kareva, M. I. Vexler, Yu. Illarionov:
"Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
Microelectronic Engineering, 109, (2013), 270 - 273 doi:10.1016/j.mee.2013.03.063.

1. M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov:
"A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures";
Semiconductors (Physics of Semiconductor Devices), 47, (2013), 686 - 694 doi:10.1134/S1063782613050230.


Talks and Poster Presentations (with Proceedings-Entry)


20. B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
"The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424.

19. Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser:
"Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338.

18. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532.

17. Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
"A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90.

16. Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
"Temperature-dependent Hysteresis in Black Phosphorus FETs";
Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), .

15. Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the 2016 IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543.

14. Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser:
"Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331.

13. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651.

12. Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741.

11. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834.

10. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) .

9. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778.

8. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge";
Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30.

7. M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
"Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162.

6. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
"A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6.

5. Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
"A method to determine the lateral trap position in ultra-scaled MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729.

4. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, D. V. Isakov, I. Grekhov:
"Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 229.

3. S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441.

2. M. I. Vexler, Yu. Illarionov, S. M. Suturin, V. V. Fedorov, N. S. Sokolov:
"Tunnel charge transport in Au/CaF2/Si(111) system";
Talk: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 74.

1. G.G. Kareva, M. I. Vexler, Yu. Illarionov:
"Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 2013-06-25 - 2013-06-28; in "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0, 246 - 247.


Talks and Poster Presentations (without Proceedings-Entry)


1. Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser:
"Reliability Perspective of 2D Electronics";
Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; .


Doctor's Theses (authored and supervised)


2. Yu. Illarionov:
"Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors";
Reviewer: T. Grasser, L. Larcher; E360, 2015, oral examination: 2015-12-18.

1. Yu. Illarionov:
"Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
Reviewer: M. I. Vexler, A. Baraban, L. Goray; Ioffe Institute, 2015, oral examination: 2015-01-22.