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Publication list for
Hans Kosina
as author or essentially involved person

616 records


Books and Editorships


3. H. Kosina, S. Selberherr:
"The Field of Computational Electronics from a European Perspective (Guest Editorial)";
Journal of Computational Electronics, 8, (2009), 173 doi:10.1007/s10825-009-0302-2.

2. H. Kosina, S. Selberherr:
"International Workshop on Computational Electronics (Editorial)";
Journal of Computational Electronics, 5, (2007), 283 - 284 doi:10.1007/s10825-006-0001-1.

1. H. Kosina, S. Selberherr:
"11th International Workshop on Computational Electronics Book of Abstracts";
Technische Universität Wien, Institut für Mikroelektronik, Wien, (2006), ISBN: 3-901578-16-1, 400 page(s) .


Publications in Scientific Journals


173. M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein:
"Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures";
Nano Letters, 16, (2016), 3507 - 3518 doi:10.1021/acs.nanolett.6b00315.

172. S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
"The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO2 Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study";
Journal of Applied Physics, 114, (2016), 144302-1 - 1444302-9 doi:10.1063/1.4945392.

171. M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee:
"Electronic Properties of Dislocations";
Solid State Phenomena, 242, (2016), 141 - 146 doi:10.4028/www.scientific.net/SSP.242.141.

170. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach";
Journal of Electronic Materials, 45, (2016), 1584 - 1588 doi:10.1007/s11664-015-4124-7.

169. H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou:
"Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons";
Physical Review B, 91, (2015), 165410-1 - 165410-15 doi:10.1103/PhysRevB.91.165410.

168. M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"Numerical Study of Graphene Superlattice-Based Photodetectors";
IEEE Transactions on Electron Devices, 62, (2015), 593 - 600 doi:10.1109/TED.2014.2383354.

167. M. Moradinasab, M. Pourfath, H. Kosina:
"Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
IEEE Journal of Quantum Electronics, 51, (2015), 1 - 7 doi:10.1109/JQE.2014.2373171.

166. S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
"On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals";
Journal of Applied Physics, 118, (2015), 205303-1 - 205303--6 doi:10.1063/1.4936310.

165. N. Neophytou, H. Karamitaheri, H. Kosina:
"Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study";
Journal of Electronic Materials, 44, (2015), 1599 - 1605 doi:10.1007/s11664-014-3488-4.

164. Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause:
"Consistent Low-Field Mobility Modeling for Advanced MOS Devices";
Solid-State Electronics, 112, (2015), 37 - 45 doi:10.1016/j.sse.2015.02.008.

163. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices";
Journal of Applied Physics, 118, (2015), 224301-1 - 224301-6 doi:10.1063/1.4936839.

162. H. Karamitaheri, N. Neophytou, H. Kosina:
"Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires";
Journal of Applied Physics, 115, (2014), 024302_1 - 024302_7 doi:10.1063/1.4858375.

161. A. Mojibpour, M. Pourfath, H. Kosina:
"Optimization study of third harmonic generation in quantum cascade lasers";
Optics Express, 22, (2014), 20607 - 20612 doi:10.1364/OE.22.020607.

160. N. Neophytou, H. Kosina:
"Gated Si nanowires for large thermoelectric power factors";
Applied Physics Letters, 105, (2014), 073119-1 - 5 doi:10.1063/1.4893977.

159. P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"Diagonal-transition quantum cascade detector";
Applied Physics Letters, 105, (2014), 1 - 4 doi:10.1063/1.4894767.

158. S. Wolf, N. Neophytou, H. Kosina:
"Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness";
Journal of Applied Physics, 115, (2014), 204306 - 204313 doi:10.1063/1.4879242.

157. S. Wolf, N. Neophytou, Z. Stanojevic, H. Kosina:
"Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes";
Journal of Electronic Materials, 43, (2014), 3870 - 3875 doi:10.1007/S11664-014-3324-X.

156. O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina:
"VSP-a quantum-electronic simulation framework";
Journal of Computational Electronics, 12, (2013), 701 - 721 doi:10.1007/s10825-013-0535-y.

155. H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina:
"Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method";
Journal of Electronic Materials, 42, (2013), 2091 - 2097 doi:10.1007/s116640132533z.

154. H. Karamitaheri, N. Neophytou, H. Kosina:
"Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation";
Journal of Applied Physics, 113, (2013), 204305-1 - 204305-9 doi:10.1063/1.4808100.

153. H. Karamitaheri, N. Neophytou, H. Kosina:
"Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires";
Journal of Electronic Materials, 1, (2013), 1 - 8 doi:10.1007/s11664-013-2884-5.

152. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 60, (2013), 2142 - 2147 doi:10.1109/TED.2013.2262049.

151. J.-F. Mennemann, A. Jüngel, H. Kosina:
"Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator";
Journal of Computational Physics, 239, (2013), 187 - 205 doi:10.1016/j.jcp.2012.12.009.

150. N. Neophytou, H. Karamitaheri, H. Kosina:
"Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers";
Journal of Computational Electronics, 12, (2013), 611 - 622 doi:10.1007/s1082501305223.

149. N. Neophytou, H. Kosina:
"Optimizing Thermoelectric Power Factor by Means of a Potential Barrier";
Journal of Applied Physics, 114, (2013), 044315_1 - 044315-6 doi:10.1063/1.4816792.

148. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
"Power factor enhancement by inhomogeneous distribution of dopants in two-phase nanocrystalline systems";
Journal of Electronic Materials, 43, (2013), 1896 - 1904 doi:10.1007/s11664-013-z.

147. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
"Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si";
Nanotechnology, 24, (2013), 205402 doi:10.1088/0957-4484/24/20/205402.

146. H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina:
"Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons";
Journal of Applied Physics, 111, (2012), 054501-1 - 054501-9 doi:10.1063/1.3688034.

145. H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
"Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method";
Journal of Computational Electronics, 11, (invited) (2012), 14 - 21 doi:10.1007/s10825-011-0380-9.

144. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
"Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons";
Journal of Applied Physics, 111, (2012), 074318-1 - 074318-9 doi:10.1063/1.3702429.

143. H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices";
Journal of Applied Physics, 111, (2012), 093512-1 - 093512-6 doi:10.1063/1.4710988.

142. N. Neophytou, H. Kosina:
"Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors";
IEEE Electron Device Letters, 33, (2012), 652 - 654 doi:10.1109/LED.2012.2188879.

141. N. Neophytou, H. Kosina:
"Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands";
Solid-State Electronics, 70, (2012), 81 - 91 doi:10.1016/j.sse.2011.11.018.

140. N. Neophytou, H. Kosina:
"Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels";
Journal of Applied Physics, 112, (2012), 024305-1 - 024305-6 doi:10.1063/1.4737122.

139. N. Neophytou, H. Kosina:
"Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires";
Journal of Computational Electronics, 11, (invited) (2012), 29 - 44 doi:10.1007/s10825-012-0383-1.

138. N. Neophytou, H. Kosina:
"On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires";
Journal of Electronic Materials, 41, (2012), 1305 - 1311 doi:10.1007/s11664-011-1891-7.

137. B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"A bi-functional quantum cascade device for same-frequency lasing and detection";
Applied Physics Letters, 101, (2012), 1911091 - 1911094.

136. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022.

135. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina:
"Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness";
IEEE Transactions on Electron Devices, 59, (2012), 3527 - 3532 doi:10.1109/TED.2012.2218817.

134. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 59, (2012), 433 - 440 doi:10.1109/TED.2011.2173690.

133. J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Solid-State Electronics, 65-66, (2011), 81 - 87 doi:10.1016/j.sse.2011.06.041.

132. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices";
Journal of Applied Physics, 110, (2011), 054506-1 - 054506-6 doi:10.1063/1.3629990.

131. H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina:
"Graphene-Based Antidots for Thermoelectric Applications";
Journal of the Electrochemical Society, 158, (2011), K213 - K216 doi:10.1149/2.025112jes.

130. N. Neophytou, G. Klimeck, H. Kosina:
"Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities";
Journal of Applied Physics, 109, (2011), 053721-1 - 053721-6 doi:10.1063/1.3556435.

129. N. Neophytou, H. Kosina:
"Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation";
Physical Review B, 84, (2011), 085313-1 - 085313-15 doi:10.1103/PhysRevB.84.085313.

128. N. Neophytou, H. Kosina:
"Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires";
Physical Review B, 83, (2011), 245305-1 - 245305-16 doi:10.1103/PhysRevB.83.245305.

127. N. Neophytou, H. Kosina:
"Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement";
Applied Physics Letters, 99, (2011), 092110-1 - 092110-3 doi:10.1063/1.3631680.

126. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport";
Journal of Electronic Materials, 40, (2011), 753 - 758 doi:10.1007/s11664-011-1542-z.

125. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 58, (2011), 3725 - 3735 doi:10.1109/TED.2011.2163719.

124. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010.

123. A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
"Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires";
Nano Letters, 10, (2010), 3204 - 3208 doi:10.1021/nl102179c.

122. G. Milovanovic, H. Kosina:
"A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation";
Journal of Computational Electronics, 9, (2010), 211 - 217 doi:10.1007/s10825-010-0325-8.

121. M. Nedjalkov, H. Kosina, P. Schwaha:
"Device Modeling in the Wigner Picture";
Journal of Computational Electronics, 9, (2010), 218 - 223 doi:10.1007/s10825-010-0316-9.

120. N. Neophytou, S. Kim, G. Klimeck, H. Kosina:
"On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias";
Journal of Applied Physics, 107, (2010), 113701-1 - 113701-9.

119. N. Neophytou, H. Kosina:
"Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis";
Nano Letters, 10, (2010), 4913 - 4919 doi:10.1021/nl102875k.

118. N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model";
Journal of Electronic Materials, 39, (2010), 1902 - 1908 doi:10.1007/s11664-009-1035-5.

117. G. Milovanovic, O. Baumgartner, H. Kosina:
"On Open Boundary Conditions for Quantum Cascade Structures";
Optical and Quantum Electronics, 41, (2009), 921 - 932 doi:10.1007/s11082-010-9406-y.

116. M. Pourfath, H. Kosina:
"Computational Study of Carbon-Based Electronics";
Journal of Computational Electronics, 8, (2009), 427 - 440 doi:10.1007/s10825-009-0285-z.

115. G. Karlowatz, W. Wessner, H. Kosina:
"Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
Mathematics and Computers in Simulation, 79, (2008), 972 - 979 doi:10.1016/j.matcom.2008.02.021.

114. M. Pourfath, H. Kosina:
"Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets";
Journal of Computational and Theoretical Nanoscience, 5, (2008), 1128 - 1137 doi:10.1166/jctn.2008.011.

113. M. Pourfath, H. Kosina, S. Selberherr:
"Numerical Study of Quantum Transport in Carbon Nanotube Transistors";
Mathematics and Computers in Simulation, 79, (2008), 1051 - 1059 doi:10.1016/j.matcom.2007.09.004.

112. M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Journal of Physics: Conference Series, 109, (2008), 1 - 5 doi:10.1088/1742-6596/109/1/012029.

111. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019.

110. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7.

109. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Current Transport Models for Nanoscale Semiconductor Devices";
Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001.

108. E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr:
"The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon";
Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004.

107. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533.

106. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
"A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7.

105. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP - A Gate Stack Analyzer";
Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059.

104. H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
International Journal of High Speed Electronics and Systems, 17, (2007), 475 - 484.

103. L. Li, G. Meller, H. Kosina:
"Analytical Conductivity Model for Doped Organic Semiconductors";
Journal of Applied Physics, 101, (2007), 1 - 4.

102. L. Li, G. Meller, H. Kosina:
"Carrier Concentration Dependence of the Mobility in Organic Semiconductors";
Synthetic Metals, 157, (2007), 243 - 246.

101. L. Li, G. Meller, H. Kosina:
"Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes";
Applied Physics Letters, 91, (2007), 1 - 3 doi:10.1063/1.2801702.

100. L. Li, G. Meller, H. Kosina:
"Influence of Traps on Charge Transport in Organic Semiconductors";
Solid-State Electronics, 51, (2007), 445 - 448.

99. P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak:
"Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks";
IEEE Transactions on Electron Devices, 54, (2007), 106 - 114.

98. M. Pourfath, H. Kosina:
"The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors";
Nanotechnology, 18, (2007), 424036 - 424041 doi:10.1088/0957-4484/18/42/424036.

97. M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Journal of Computational Electronics, 6, (2007), 321 - 324 doi:10.1007/s10825-006-0113-7.

96. M. Pourfath, H. Kosina, S. Selberherr:
"Geometry Optimization for Carbon Nanotube Transistors";
Solid-State Electronics, 51, (2007), 1565 - 1571 doi:10.1016/j.sse.2007.09.021.

95. M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling CNTFETs";
Journal of Computational Electronics, 6, (2007), 243 - 246 doi:10.1007/s10825-006-0099-1.

94. V. Sverdlov, E. Ungersböck, H. Kosina:
"Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain";
IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340.

93. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations";
Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022.

92. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0.

91. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
"The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880.

90. M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser:
"Quantum Correction for DG MOSFETs";
Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7.

89. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639.

88. M. Karner, A. Gehring, H. Kosina:
"Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
Journal of Computational Electronics, 5, (2006), 161 - 165.

87. H. Kosina:
"Wigner function approach to nano device simulation";
International Journal of Computational Science and Engineering, 2, (2006), 100 - 118.

86. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
International Journal of High Speed Electronics and Systems, 16, (2006), 115 - 136 doi:10.1142/S0129156406003576.

85. L. Li, G. Meller, H. Kosina:
"Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors";
Microelectronics Journal, 38, (2006), 47 - 51.

84. G. Meller, L. Li, S. Holzer, H. Kosina:
"Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
Optical and Quantum Electronics, 38, (2006), 993 - 1004.

83. M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Journal of Computational Electronics, 5, (2006), 155 - 159 doi:10.1007/s10825-006-8836-z.

82. M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Transistors";
Journal of Physics: Conference Series, 38, (2006), 29 - 32 doi:10.1088/1742-6596/38/1/008.

81. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6.

80. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field-Effect Transistors";
Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009.

79. E. Ungersböck, H. Kosina:
"Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers";
Journal of Computational Electronics, 5, (2006), 79 - 83.

78. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845.

77. L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina:
"Method for Predicting fT for Carbon Nanotube FETs";
IEEE Transactions on Nanotechnology, Vol. 4, (2005), 699 - 704.

76. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788.

75. A. Gehring, H. Kosina:
"Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method";
Journal of Computational Electronics, 4, (2005), 67 - 70.

74. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
"Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311.

73. M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park:
"Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors";
Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491.

72. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043.

71. M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z.

70. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013.

69. E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr:
"Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors";
IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402.

68. T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1.

67. H. Kosina, M Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model";
Monte Carlo Methods and Applications, 10, (2004), 359 - 368 doi:10.1515/mcma.2004.10.3-4.359.

66. M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
Monte Carlo Methods and Applications, 10, (2004), 461 - 468 doi:10.1515/mcma.2004.10.3-4.461.

65. M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
"Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
Physical Review B, 70, (2004), 1 - 16 doi:10.1103/PhysRevB.70.115319.

64. M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology, 19, (2004), 226 - 228 doi:10.1088/0268-1242/19/4/076.

63. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034.

62. Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
"Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
SIAM Journal on Applied Mathematics, 64, (2004), 1933 - 1953 doi:10.1137/S0036139903428914.

61. S. Smirnov, H. Kosina:
"Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates";
Solid-State Electronics, 48, (invited) (2004), 1325 - 1335.

60. V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
"Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
Physics of Low-dimensional Structures, 5-6, (2003), 99 - 108.

59. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440.

58. A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability, 43, (2003), 1495 - 1500 doi:10.1016/S0026-2714(03)00265-8.

57. A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Journal of Computational Electronics, 2, (2003), 219 - 223 doi:10.1023/B:JCEL.0000011428.85286.7d.

56. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X.

55. T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150.

54. H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
International Journal of High Speed Electronics and Systems, 13, (invited) (2003), 727 - 769.

53. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Journal of Computational Electronics, 2, (2003), 147 - 151 doi:10.1023/B:JCEL.0000011416.93047.69.

52. H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Mathematics and Computers in Simulation, 62, (2003), 367 - 375 doi:10.1016/S0378-4754(02)00245-8.

51. H. Kosina, M. Nedjalkov, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. I. Theory";
Journal of Applied Physics, 93, (2003), 3553 - 3563 doi:10.1063/1.1544654.

50. M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Mathematics and Computers in Simulation, 62, (2003), 453 - 461 doi:10.1016/S0378-4754(02)00246-X.

49. M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Microelectronics Journal, 34, (2003), 443 - 445 doi:10.1016/S0026-2692(03)00069-7.

48. M. Nedjalkov, H. Kosina, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
Journal of Applied Physics, 93, (2003), 3564 - 3571 doi:10.1063/1.1544655.

47. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1.

46. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics, 94, (2003), 5791 - 5799 doi:10.1063/1.1616982.

45. S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
IEICE Transactions on Electronics, E86-C, (2003), 350 - 356.

44. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617.

43. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273.

42. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257.

41. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik, 444, (invited) (2002), 28 - 41.

40. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik, 444, (invited) (2002), 18 - 27.

39. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645.

38. T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Physica B: Condensed Matter, 314, (2002), 301 - 304 doi:10.1016/S0921-4526(01)01417-X.

37. H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031.

36. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002.

35. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Journal of Computational Electronics, 1, (2002), 27 - 31 doi:10.1023/A:1020799224110.

34. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Wigner Equation with Quantum Electron-Phonon Interaction";
Microelectronic Engineering, 63, (2002), 199 - 203 doi:10.1016/S0167-9317(02)00625-1.

33. F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884.

32. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757.

31. T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366.

30. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000.

29. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6.

28. H. Kosina, M. Nedjalkov:
"The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices";
Mathematics and Computers in Simulation, 55, (2001), 93 - 102.

27. M. Nedjalkov, H. Kosina:
"Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
Mathematics and Computers in Simulation, 55, (2001), 191 - 198.

26. M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
VLSI Design, 13, (2001), 405 - 411 doi:10.1155/2001/54247.

25. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
Journal of Applied Physics, 87, (2000), 4308 - 4314 doi:10.1063/1.373070.

24. H. Kosina, M. Nedjalkov, S. Selberherr:
"Theory of the Monte Carlo Method for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 47, (2000), 1898 - 1908 doi:10.1109/16.870569.

23. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
IEICE Transactions on Electronics, E83-C, (2000), 1218 - 1223.

22. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43, (1999), 1791 - 1795 doi:10.1016/S0038-1101(99)00132-X.

21. H. Kosina:
"A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis";
IEEE Transactions on Electron Devices, 46, (1999), 1196 - 1200.

20. K. Zankel, H. Kosina:
"Capacitance Simulation of Irradiated Semiconductor Detectors";
Il Nuovo Cimento, 112, (1999), 43 - 47.

19. G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
VLSI Design, 6, (1998), 209 - 212 doi:10.1155/1998/87014.

18. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics, 83, (1998), 3096 - 3101 doi:10.1063/1.367067.

17. H. Kosina, M. Harrer:
"A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
VLSI Design, 6, (1998), 205 - 208 doi:10.1155/1998/83430.

16. H. Kosina, G. Kaiblinger-Grujin:
"Ionized-Impurity Scattering of Majority Electrons in Silicon";
Solid-State Electronics, 42, (1998), 331 - 338 doi:10.1016/S0038-1101(97)00199-8.

15. H. Kosina, C. Troger:
"SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands";
VLSI Design, 8, (1998), 489 - 493 doi:10.1155/1998/39231.

14. C. Wasshuber, H. Kosina:
"Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge";
VLSI Design, 6, (1998), 35 - 38 doi:10.1155/1998/53694.

13. C. Wasshuber, H. Kosina, S. Selberherr:
"A Comparative Study of Single-Electron Memories";
IEEE Transactions on Electron Devices, 45, (1998), 2365 - 2371 doi:10.1109/16.726659.

12. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
VLSI Design, 8, (1998), 219 - 223 doi:10.1155/1998/83017.

11. G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Materials Science Forum, 258-263, (1997), 939 - 944 doi:10.4028/www.scientific.net/MSF.258-263.939.

10. C. Köpf, H. Kosina, S. Selberherr:
"Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
Solid-State Electronics, 41, (1997), 1139 - 1152 doi:10.1016/S0038-1101(97)00051-8.

9. H. Kosina:
"Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations";
Physica Status Solidi A, 163, (1997), 475 - 489.

8. C. Wasshuber, H. Kosina:
"A Single-Electron Device and Circuit Simulator";
Superlattices and Microstructures, 21, (1997), 37 - 42 doi:10.1006/spmi.1996.0138.

7. C. Wasshuber, H. Kosina, S. Selberherr:
"A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449164.

6. C. Wasshuber, H. Kosina, S. Selberherr:
"SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 937 - 944 doi:10.1109/43.658562.

5. S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
"The Viennese Integrated System for Technology CAD Applications";
Microelectronics Journal, 26, (1995), 137 - 158 doi:10.1016/0026-2692(95)98918-H.

4. H. Kosina, E. Langer, S. Selberherr:
"Device Modelling for the 1990s";
Microelectronics Journal, 26, (invited) (1995), 217 - 233 doi:10.1016/0026-2692(95)98923-F.

3. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii:
"A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon";
IEEE Transactions on Electron Devices, 41, (1994), 1646 - 1654 doi:10.1109/16.310119.

2. H. Kosina, S. Selberherr:
"A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 201 - 210 doi:10.1109/43.259943.

1. H. Kosina, S. Selberherr:
"Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors";
Japanese Journal of Applied Physics, 29, (1990), L2283 - L2285 doi:10.1143/JJAP.29.L2283.


Contributions to Books


38. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 301 - 308 doi:10.1007/978-3-319-26520-9_33.

37. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers";
in "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 59 - 67.

36. J.-F. Mennemann, A. Jüngel, H. Kosina:
"Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator";
in "ASC Report 17/2012", issued by Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2012, ISBN: 978-3-902627-05-6, 1 - 30.

35. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices";
in "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3", Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (ed); ECS Transactions, 2011, ISBN: 978-1-56677-864-0, 185 - 192.

34. M. Nedjalkov, D. Querlioz, P. Dollfus, H. Kosina:
"Wigner Function Approach";
in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer, (invited) 2011, ISBN: 978-1-4419-8839-3, 289 - 358 doi:10.1007/978-1-4419-8840-9_5.

33. M. Pourfath, H. Kosina:
"Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors";
in "Encyclopedia of Nanoscience and Nanotechnology", H. Nalwa (ed); American Scientific Publishers, 2011, ISBN: 1-58883-168-x, 541 - 581.

32. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 443 - 450 doi:10.1007/978-3-642-12535-5_52.

31. H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
in "Physics and Modeling of Tera- and Nano-Devices", World Scientific Publishing Co., Singapore, 2008, ISBN: 978-981-277-904-5, 31 - 40.

30. M. Nedjalkov, H. Kosina, D. Vasileska:
"Wigner Ensemble Monte Carlo: Challenges of 2D Nano-Device Simulation";
in "Lecture Notes in Computer Science Vol. 4818", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-80-86407-12-8, 139 - 147.

29. V. Sverdlov, E. Ungersböck, H. Kosina:
"Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
in "Lecture Notes in Computer Science Vol. 4818", Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-80-86407-12-8, 157 - 164.

28. M. Pourfath, H. Kosina, S. Selberherr:
"Carbon Nanotube Based Transistors: A Computational Study";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1041 - 1042 doi:10.1063/1.2730253.

27. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
"Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425.

26. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
in "NATO Security through Science Series Vol.2006", Springer-Verlag, Netherlands, 2007, ISBN: 978-1-4020-6378-7, 357 - 362.

25. V. Sverdlov, E. Ungersböck, H. Kosina:
"Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
in "Springer Lecture Notes", Springer, 2007, 62 - 63.

24. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1389 - 1390 doi:10.1063/1.2730422.

23. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
"Analysis of Hole Transport in Arbitrarily Strained Germanium";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 443 - 450 doi:10.1149/1.2355842.

22. M. Karner, A. Gehring, S. Holzer, H. Kosina:
"Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin/Heidelberg, 2006, ISBN: 3-540-31994-8, 572 - 577.

21. M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
in "Physics and Technology of High-k Gate Dielectrics III, Vol. 1 No. 5", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (ed); ECS Transactions, 2006, ISBN: 1-56677-444-6, 693 - 703 doi:10.1149/1.2209316.

20. M. Karner, S. Holzer, W. Gös, M. Vasicek, M. Wagner, H. Kosina, S. Selberherr:
"Numerical Analysis of Gate Stacks";
in "Physics and Technology of High-k Gate Dielectrics 4, Vol. 3 No. 3", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (ed); ECS Transactions, 2006, ISBN: 1-56677-503-5, 299 - 308 doi:10.1149/1.2355721.

19. H. Kosina, M. Nedjalkov:
"Wigner Function-Based Device Modeling";
in "Handbook of Theoretical and Computational Nanotechnology", issued by Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, 731 - 763.

18. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronics Devices";
in "Frontiers in Electronics", H. Iwai, Y. Nishida, M. Shur, H. Wong (ed); World Scientific Publishing Co., 2006, ISBN: 978-981-256-884-7, 115 - 136 doi:10.1142/S0129156406003576.

17. M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin/Heidelberg, 2006, ISBN: 3-540-31994-8, 149 - 156.

16. M. Pourfath, H. Kosina:
"Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin / Heidelberg, 2006, ISBN: 3-540-31994-8, 578 - 585.

15. V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
in "Lecture Notes in Computer Science, Vol. 3743", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2006, ISBN: 3-540-31994-8, 594 - 601 doi:10.1007/11666806_68.

14. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 45 - 54 doi:10.1149/1.2355793.

13. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
in "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", issued by The Electrochemical Society; J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (ed); ECS Transactions, (invited) 2006, ISBN: 1-56677-512-4, 207 - 216.

12. M. Karner, A. Gehring, S. Holzer, H. Kosina:
"On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling";
in "Springer Lecture Notes", Springer, 2005, 33 - 34.

11. V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr:
"Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays";
in "Unsolved Problems of Noise and Fluctuations", issued by New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, 177 - 182.

10. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

9. H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, (invited) 2003, ISBN: 9-812-38607-6, 27 - 69.

8. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in "Lecture Notes in Computer Science, Vol. 2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 170 - 177.

7. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
in "Lecture Notes in Computer Science, Vol. 2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 178 - 184.

6. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in "Lecture Notes in Computer Science, Vol.2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 185 - 193.

5. H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
in "Lecture Notes in Computer Science, Vol. 2179", S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2001, ISBN: 3-540-43043-1, 175 - 182.

4. M. Nedjalkov, T.V. Gurov, H. Kosina, P.A. Whitlock:
"Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II";
in "Springer Lecture Notes", Springer, 2001, A-27 - A-28.

3. M. Nedjalkov, T.V. Gurov, H. Kosina, P.A. Whitlock:
"Statistical Algorithms for Simulation of Quantum Kinetics in Semiconductors - Part II";
in "Large-Scale Scientific Computing", S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2001, ISBN: 3-540-43043-1, 183 - 190.

2. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity and Beyond";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 1999, ISBN: 0-471-32183-4, 313 - 322.

1. H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
"Simulation of ULSI Processes and Devices";
in "Computer Aided Innovation of New Materials", M. Doyama et al. (ed); North Holland Publishing Company, (invited) 1991, ISBN: 0-444-88864-0, 723 - 728.


Talks and Poster Presentations (with Proceedings-Entry)


317. O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, Z. Stanojevic, H. W. Cheng-Karner:
"Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 202 - 205 doi:10.1109/SISPAD.2015.7292294.

316. S. Nazemi, E. Soleimani, M. Pourfath, H. Kosina:
"The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 333 - 336.

315. A. Kefayati, M. Pourfath, H. Kosina:
"A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 7 - 8.

314. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 4 page(s) .

313. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations";
Talk: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 2015-06-28 - 2015-07-02; in "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 page(s) .

312. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 70.

311. N. Neophytou, M. Thesberg, M. Pourfath, H. Kosina:
"Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations";
Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

310. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study";
Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

309. O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner:
"Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577.

308. L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
"BTB Tunneling in InAs/Si Heterojunctions";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 245 - 248 doi:10.1109/SISPAD.2014.6931609.

307. Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
"On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 181 - 184 doi:10.1109/SISPAD.2014.6931593.

306. M. Moradinasab, M. Pourfath, H. Kosina:
"Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers";
Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 2014-09-07 - 2014-09-12; in "International Quantum Cascade Lasers School & Workshop 2014", (2014), 182 - 183.

305. M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors";
Talk: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 2014-09-01 - 2014-09-04; in "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), 1 - 2.

304. M. Moradinasab, M. Pourfath, H. Kosina:
"An Instability Study in Terahertz Quantum Cascade Lasers";
Talk: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 2014-08-03 - 2014-08-08; in "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), 10.

303. N. Neophytou, H. Kosina:
"Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach";
Talk: International Conference on Thermoelectrics, Nashville, USA; 2014-07-06 - 2014-07-10; in "Book of Abstracts", (2014), 1 page(s) .

302. N. Neophytou, H. Karamitaheri, H. Kosina:
"Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1.

301. Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
"Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1.

300. Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
"Full-Band Modeling of Mobility in p-Type FinFETs";
Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0, 83 - 84.

299. L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
"Band-to-Band Tunneling in 3D Devices";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 13 - 14.

298. N. Neophytou, H. Kosina:
"Thermoelectric properties of gated Si nanowires";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 197 - 198.

297. Z. Stanojevic, L. Filipovic, O. Baumgartner, H. Kosina:
"Fast Methods for Full-Band Mobility Calculation";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 51 - 52.

296. S. Touski, Z. Chaghazardi, M. Pourfath, M. Moradinasab, R. Faez, H. Kosina:
"Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 101 - 102.

295. Z. Stanojevic, L. Filipovic, O. Baumgartner, M. Karner, C. Kernstock, H. Kosina:
"Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 page(s) .

294. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Gated Silicon Nanowires";
Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), 1 page(s) .

293. L. Filipovic, Z. Stanojevic, O. Baumgartner, H. Kosina:
"3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

292. Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina:
"Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

291. Z. Stanojevic, M. Karner, H. Kosina:
"Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 332 - 335 doi:10.1109/IEDM.2013.6724618.

290. N. Neophytou, Z. Stanojevic, H. Kosina:
"Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations";
Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 2013-09-23 - 2013-09-26; in "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), 142.

289. O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
"Direct Tunneling and Gate Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563.

288. L. Filipovic, O. Baumgartner, H. Kosina:
"Modeling Direct Band-to-Band Tunneling using QTBM";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 212 - 215 doi:10.1109/SISPAD.2013.6650612.

287. N. Neophytou, Z. Stanojevic, H. Kosina:
"Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 81 - 84 doi:10.1109/SISPAD.2013.6650579.

286. Z. Stanojevic, H. Kosina:
"Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 352 - 355 doi:10.1109/SISPAD.2013.6650647.

285. H. Karamitaheri, N. Neophytou, H. Kosina:
"Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions";
Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 2013-06-30 - 2013-07-04; in "Book of Abstracts", (2013), 1 page(s) .

284. N. Neophytou, H. Karamitaheri, H. Kosina:
"Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons";
Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 2013-06-30 - 2013-07-04; in "Book of Abstracts", (2013), 1 page(s) .

283. Z. Stanojevic, H. Kosina:
"Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures";
Talk: Silicon Nanoelectronics Workshop, Kyoto, Japan; 2013-06-09 - 2013-06-10; in "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), 93 - 94.

282. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 86 - 87.

281. H. Karamitaheri, N. Neophytou, H. Kosina:
"Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 98 - 99.

280. Z. Stanojevic, O. Baumgartner, K. Schnass, M. Karner, H. Kosina:
"VSP - a Quantum Simulator for Engineering Applications";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 132 - 133.

279. S. Touski, M. Pourfath, H. Kosina:
"Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 108 - 109.

278. M. Moradinasab, M. Pourfath, H. Kosina:
"Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects";
Poster: Graphene Week, Chemnitz, Germany; 2013-06-02 - 2013-06-07; in "Book of Abstracts", (2013), 250.

277. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures";
Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) .

276. H. Kosina, N. Neophytou:
"Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; (invited) 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 419.

275. N. Neophytou, H. Kosina:
"Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; (invited) 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 488.

274. H. Karamitaheri, M. Pourfath, N. Neophytou, H. Kosina:
"Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor";
Talk: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting", (2012), 1 page(s) .

273. Z. Stanojevic, O. Baumgartner, H. Kosina:
"A stable discretization method for "Dirac-like" effective Hamiltonians";
Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 2012-09-02 - 2012-09-06; in "Proc. International Quantum Cascade Lasers School & Workshop", (2012), 127.

272. H. Karamitaheri, N. Neophytou, H. Kosina:
"Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method";
Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 2012-07-09 - 2012-07-12; in "Book of Abstracts", (2012), 1 page(s) .

271. N. Neophytou, H. Karamitaheri, H. Kosina:
"Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling";
Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 2012-07-09 - 2012-07-12; in "Book of Abstracts", (2012), 1 page(s) .

270. N. Neophytou, H. Karamitaheri, H. Kosina:
"Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications";
Talk: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 2012-07-03 - 2012-07-06; in "Abstract Book", (2012), 46.

269. H. Karamitaheri, M. Pourfath, H. Kosina:
"Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor";
Poster: Graphene Week, Delft, Netherlands; 2012-06-04 - 2012-06-08; in "Book of Abstracts", (2012), 1 page(s) .

268. M. Moradinasab, H. Karamitaheri, M. Pourfath, H. Kosina:
"On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors";
Poster: Graphene Week, Delft, Netherlands; 2012-06-04 - 2012-06-08; in "Book of Abstracts", (2012), 1 page(s) .

267. H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
"Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 77 - 78.

266. M. Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour, H. Kosina:
"Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 249 - 250.

265. H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour, H. Kosina:
"A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 217 - 218.

264. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; (invited) 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 67 - 68.

263. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
"Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors";
Talk: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 2012-05-06 - 2012-05-10; in "ECS Meeting", (2012), 1 page(s) .

262. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures";
Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) .

261. N. Neophytou, H. Kosina:
"Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 131 - 132.

260. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"An Investigation of ZGNR-Based Transistors";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

259. H. Karamitaheri, M. Pourfath, N. Neophytou, M. Pazoki, H. Kosina:
"First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications";
Talk: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 2011-12-05 - 2011-12-07; in "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5, 19 - 22.

258. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Transport Gap Engineering in Zigzag Graphene Nanoribbons";
Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 2011-11-21 - 2011-11-25; in "Poster Abstracts Book (TNT 2011)", (2011), 2.

257. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor of Low Dimensional Silicon Nanowires";
Talk: European Conference on Thermoelectrics, Thessaloniki, Greece; 2011-09-28 - 2011-09-30; in "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 page(s) .

256. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 91 - 94 doi:10.1109/SISPAD.2011.6035057.

255. N. Neophytou, H. Kosina:
"Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 31 - 34 doi:10.1109/SISPAD.2011.6035042.

254. Z. Stanojevic, M. Karner, K. Schnass, Ch. Kernstock, O. Baumgartner, H. Kosina:
"A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 143 - 146 doi:10.1109/SISPAD.2011.6035089.

253. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers";
Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 2011-08-29 - 2011-09-02; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 21.

252. N. Neophytou, H. Kosina:
"Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations";
Talk: 30th International Conference on Thermoelectrics, Michigan, USA; 2011-07-17 - 2011-07-21; in "Book of Abstracts", (2011), 1 page(s) .

251. N. Neophytou, H. Kosina:
"Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation";
Talk: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 2011-06-14 - 2011-06-17; in "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011), 1 page(s) .

250. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices";
Talk: 219th ECS Meeting, Montreal, Canada; 2011-05-01 - 2011-05-06; in "219th ECS Meeting", (2011), 1 page(s) .

249. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications";
Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 2011-04-18 - 2011-04-20; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765811.

248. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina:
"Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons";
Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 2011-04-18 - 2011-04-20; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765816.

247. H. Kosina:
"Semiconductor Device Modeling: The Last 30 Years";
Talk: GMe Forum 2011, Vienna, Austria; (invited) 2011-04-14 - 2011-04-15; in "Abstracts of the Invited Presentations", (2011), 9.

246. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations";
Talk: APS March Meeting, Dallas, Texas; 2011-03-21 - 2011-03-25; in "APS March Meeting 2011", (2011), 1 page(s) .

245. N. Neophytou, H. Kosina:
"Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011), 2 page(s) .

244. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100.

243. H. Kosina:
"Quantum Cascade Laser Modeling based on the Pauli Master Equation";
Talk: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien; (invited) 2010-11-03 - 2010-11-05; in "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), 6.

242. N. Neophytou, G. Klimeck, H. Kosina:
"A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires";
Poster: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 93 - 96 doi:10.1109/IWCE.2010.5678007.

241. M. Pourfath, A. Yazdanpanah Goharrizi, M. Fathipour, H. Kosina:
"On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 45 - 48 doi:10.1109/IWCE.2010.5677936.

240. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
"Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 5 - 8 doi:10.1109/IWCE.2010.5677927.

239. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Thermal Properties of Graphene Antidots";
Poster: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 102.

238. N. Neophytou, M. Wagner, H. Kosina:
"Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires";
Talk: 8th European Conference on Thermoelectrics (ECT 2010), Como; 2010-09-22 - 2010-09-24; in "Note-Book of Abstracts", (2010), 30.

237. J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 297 - 300.

236. M. Pourfath, A. Yazdanpanah Goharrizi, H. Kosina:
"The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons";
Talk: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in "Abstract Book", (2010), 419.

235. G. Milovanovic, O. Baumgartner, H. Kosina:
"Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach";
Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 2010-09-05 - 2010-09-09; in "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), 140 - 141.

234. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model";
Talk: 29th International Conference on Thermoelectrics, Shanghai; 2010-05-30 - 2010-06-03; in "Proceedings of the 29th International Conference on Thermoelectrics", (2010), 71.

233. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
"Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 2010-03-18 - 2010-03-19; in "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72.

232. N. Neophytou, H. Kosina:
"Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires";
Talk: Annual March Meeting of the American Physical Society, Portland; 2010-03-15 - 2010-03-19; in "Proceedings of the Annual March Meeting of the American Physical Society", (2010), 401.

231. N. Neophytou, H. Kosina:
"Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model";
Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 2010-02-21 - 2010-02-24; in "Nanostructured Thermoelectric Materials", (2010), 1 page(s) .

230. O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2010-01-25 - 2010-01-27; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92.

229. M. Pourfath, H. Kosina, S. Selberherr:
"Theoretical Study of Graphene Nanoribbon Photo-Detectors";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 2009-11-30 - 2009-12-04; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179.

228. G. Milovanovic, O. Baumgartner, H. Kosina:
"Simulation of Quantum Cascade Lasers using Robin Boundary Conditions";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 2009-09-14 - 2009-09-17; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 7 - 8.

227. M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr:
"Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 2009-09-14 - 2009-09-17; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 13 - 14.

226. H. Kosina:
"Transport Modeling for Nanowires and Nanotubes";
Talk: Final FoNE Conference, Miraflores de la Sierra, Madrid; 2009-09-09 - 2009-09-13; in "Proceedings of the Final FoNE Conference", (2009), 35.

225. N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck:
"Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 71 - 74 doi:10.1109/SISPAD.2009.5290245.

224. N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model";
Talk: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 2009-07-26 - 2009-07-30; in "Book of Abstracts", (2009), 91.

223. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93.

222. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131.

221. G. Milovanovic, H. Kosina:
"Nonparabolicity Effects in Quantum Cascade Lasers";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 189 - 192 doi:10.1109/IWCE.2009.5091129.

220. N. Neophytou, H. Kosina, T. Rakshit:
"Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 161 - 164 doi:10.1109/IWCE.2009.5091141.

219. V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
"The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158.

218. M. Pourfath, H. Kosina:
"Carbon Based Electronics: A Computational Study";
Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing; (invited) 2009-04-20 - 2009-04-24; in "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 18.

217. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58.

216. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes";
Talk: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 2008-11-17 - 2008-11-19; in "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), 66 - 67.

215. M. Pourfath, H. Kosina, S. Selberherr:
"Current Transport in Carbon Nanotube Transistors";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 2008-10-20 - 2008-10-23; in "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2, 361 - 364.

214. M. Pourfath, H. Kosina, S. Selberherr:
"Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors";
Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 2008-09-15 - 2008-09-19; in "European Solid-State Device Research Conference", (2008), 214 - 217.

213. O. Baumgartner, M. Karner, H. Kosina:
"Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 353 - 356 doi:10.1109/SISPAD.2008.4648310.

212. M. Pourfath, H. Kosina:
"Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 81 - 84 doi:10.1109/SISPAD.2008.4648242.

211. M. Pourfath, O. Baumgartner, H. Kosina:
"On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 2008-09-01 - 2008-09-04; in "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1, 99 - 100 doi:10.1109/NUSOD.2008.4668261.

210. M. Pourfath, V. Sverdlov, H. Kosina:
"On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors";
Talk: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 2008-06-29 - 2008-07-03; in "1st Fone Conference Nanoelectronics 2008", (2008), 41.

209. G. Milovanovic, H. Kosina:
"Valence Band Deformation Potentials in Semiconductors";
Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 2008-05-11 - 2008-05-14; in "Abstract Book", (2008), 215 - 216.

208. V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr:
"Stress-Induced Valley Splitting in Silicon Thin Films";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 2008-03-12 - 2008-03-14; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96.

207. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 2008-01-23 - 2008-01-25; in "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42.

206. M. Karner, O. Baumgartner, M. Pourfath, M. Vasicek, H. Kosina:
"Investigation of a MOSCAP Using NEGF";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

205. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

204. M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN2007), Waikoloa, Hawaii; 2007-12-02 - 2007-12-07; in "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), 37 - 38.

203. V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224.

202. V. Sverdlov, H. Kosina:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 92 - 93.

201. V. Sverdlov, H. Kosina, S. Selberherr:
"Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 2007-10-01 - 2007-10-05; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), Vol.O1-14, .

200. H. Kosina, O. Triebl, T. Grasser:
"Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76.

199. L. Li, G. Meller, H. Kosina:
"Charge Injection Model in Organic Light-Emitting Diodes based on a Master Equation";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 377 - 380 doi:10.1007/978-3-211-72861-1_91.

198. G. Meller, L. Li, S. Holzer, H. Kosina:
"Dynamic Monte Carlo Simulation of an Amorphous Organic Device";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 373 - 376 doi:10.1007/978-3-211-72861-1_90.

197. M. Pourfath, H. Kosina:
"The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 309 - 312 doi:10.1007/978-3-211-72861-1_74.

196. V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina:
"Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79.

195. M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser:
"Modeling of Macroscopic Transport Parameters in Inversion Layers";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48.

194. V. Sverdlov, H. Kosina, S. Selberherr:
"Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model";
Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 2007-09-19 - 2007-09-21; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) .

193. M. Pourfath, H. Kosina, S. Selberherr:
"The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1123-8, 239 - 242.

192. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1124-6, 386 - 389.

191. L. Li, G. Meller, H. Kosina:
"Charge Injection Model for Organic Light-Emitting Diodes";
Talk: International Conference on Organic Electronics (ICOE), Eindhoven; 2007-06-04 - 2007-06-07; in "International Conference on Organic Electronics", (2007), .

190. O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina:
"Adaptive Energy Integration of Non-Equilibrium Green´s Functions";
Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-19 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), Vol.3, ISBN: 1-4200-6184-4, 145 - 148.

189. V. Sverdlov, E. Ungersböck, H. Kosina:
"Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 2007-01-24 - 2007-01-26; in "EUROSOI 2007", (2007), 39 - 40.

188. L. Li, G. Meller, H. Kosina:
"Field-Dependent Effective Transport Energy in Organic Semiconductor";
Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 2006-12-11 - 2006-12-15; in "3rd Meeting on Molecular Electronics", (2006), T2-PC18.

187. M. Pourfath, H. Kosina, S. Selberherr:
"A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2006-12-11 - 2006-12-13; in "2006 International Electron Devices Meeting (IEDM) Technical Digest", (2006), ISBN: 1-4244-0438-x, 819 - 822 doi:10.1109/IEDM.2006.346739.

186. E. Ungersböck, H. Kosina, S. Selberherr:
"The Influence of Stress on Inversion Layer Mobility";
Talk: Advanced Heterostructure Workshop (AHW), Kona; (invited) 2006-12-03 - 2006-12-08; in "Abstracts Advanced Heterostructure Workshop", (2006), TH-2.

185. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
"Analysis of Hole Transport in Arbitrarily Strained Germanium";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

184. M. Karner, S. Holzer, M. Vasicek, W. Gös, M. Wagner, H. Kosina, S. Selberherr:
"Numerical Analysis of Gate Stacks";
Talk: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

183. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

182. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain Engineering for CMOS Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2006-10-23 - 2006-10-26; in "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127.

181. H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
Talk: International Workshop on Tera- and Nano-Devices: Physics and Modeling, Aizu-Wakamatsu; (invited) 2006-10-16 - 2006-10-19; in "IWTND06 Workbook", (2006), 26.

180. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 2006-10-15 - 2006-10-19; in "NATO Advanced Research Workshop Conference Abstracts", (2006), 77 - 78.

179. M. Pourfath, H. Kosina, S. Selberherr:
"Optimal Design for Carbon Nanotube Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-19 - 2006-09-21; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 210 - 213.

178. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-18 - 2006-09-22; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 178 - 181.

177. G. Meller, L. Li, S. Holzer, H. Kosina:
"Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 2006-09-11 - 2006-09-14; in "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x, 1 - 2.

176. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833.

175. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina:
"Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 63 - 66 doi:10.1109/SISPAD.2006.282839.

174. M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 314 - 317 doi:10.1109/SISPAD.2006.282898.

173. H. Kosina, V. Sverdlov, T. Grasser:
"Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908.

172. L. Li, G. Meller, H. Kosina:
"Doping Dependent Conductivity in Organic Semiconductors";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 204 - 207 doi:10.1109/SISPAD.2006.282872.

171. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 208 - 211 doi:10.1109/SISPAD.2006.282873.

170. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834.

169. M. Pourfath, H. Kosina:
"On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors";
Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 2006-09-04 - 2006-09-08; in "Proceedings Trends in Nanotechnology", (2006), 2 page(s) .

168. H. Kosina:
"Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices";
Talk: The 4th International Nanotech Symposium & Exhibition, Seoul; (invited) 2006-08-30 - 2006-09-01; in "Program Book NANO KOREA 2006", (2006), .

167. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 2006-08-28 - 2006-09-01; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216.

166. G. Meller, L. Li, S. Holzer, H. Kosina:
"Electron Kinetics in Disordered Organic Semiconductors";
Poster: ACS/IEEE/MRS Annual Organic Microelectronics Workshop, Toronto; 2006-07-09 - 2006-07-12; in "Abstracts 2nd Annual Organic Microelectronics Workshop", (2006), 42.

165. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP-A Gate Stack Analyzer";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102.

164. M. Pourfath, H. Kosina, S. Selberherr:
"Optimizing the Performance of Carbon Nanotube Transistors";
Poster: IEEE Conference on Nanotechnology (IEEE-NANO), Cincinnati; 2006-06-17 - 2006-06-20; in "Sixth IEEE Conference on Nanotechnology, Vol.2", (2006), ISBN: 1-4244-0078-3, 520 - 523.

163. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154.

162. M. Karner, A. Gehring, S. Holzer, M. Wagner, H. Kosina:
"Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 161 - 162.

161. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations";
Talk: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18.

160. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256.

159. L. Li, G. Meller, H. Kosina:
"Percolation Current in Organic Semiconductors";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 161 - 162.

158. M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 345 - 346.

157. M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling-CNTFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 291 - 292.

156. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30.

155. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142.

154. M. Wagner, T. Grasser, M. Karner, H. Kosina:
"Quantum Correction for DG MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88.

153. M. Pourfath, H. Kosina, S. Selberherr:
"On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 page(s) .

152. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73.

151. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Flow in Upcoming Microelectronic Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8.

150. M. Karner, M. Wagner, T. Grasser, H. Kosina:
"A Physically Based Quantum Correction Model for DG MOSFETs";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105.

149. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2006-03-08 - 2006-03-10; in "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), 133 - 134.

148. G. Karlowatz, W. Wessner, H. Kosina:
"Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-6.

147. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Transport in Nanoelectronic Semiconductor Devices";
Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 2006-01-10 - 2006-01-13; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495.

146. L. Li, H. Kosina:
"An Analytical Model for Organic Thin Film Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; 2005-12-19 - 2005-12-21; in "Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 571 - 574.

145. G. Meller, L. Li, H. Kosina:
"Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors";
Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 2005-12-19 - 2005-12-21; in "Second Meeting on Molecular Electronics", (2005), 107.

144. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field Effect Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2005-12-19 - 2005-12-21; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390.

143. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr:
"Modeling of Velocity-Field Characteristics in Strained Silicon";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol.Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063.

142. M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Field Effect Transistors";
Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 2005-11-27 - 2005-12-02; in "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), 155 - 156.

141. M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics";
Talk: Meeting of the Electrochemical Society (ECS), Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), Vol.1119, ISSN: 1091-8213, 1 page(s) .

140. L. Li, G. Meller, H. Kosina:
"Temperature and Field-dependence of Hopping Conduction in Organic Semiconductors";
Poster: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 2005-09-27 - 2005-09-30; in "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), 112 - 113.

139. G. Meller, L. Li, H. Kosina:
"Monte Carlo Simulation of Molecularly Doped Organic Semiconductors";
Talk: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 2005-09-27 - 2005-09-30; in "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), 44 - 45.

138. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 541 - 544.

137. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96.

136. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina:
"Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 223 - 226 doi:10.1109/SISPAD.2005.201513.

135. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512.

134. M. Karner, A. Gehring, H. Kosina, S. Selberherr:
"Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 35 - 38 doi:10.1109/SISPAD.2005.201466.

133. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park:
"Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 91 - 94 doi:10.1109/SISPAD.2005.201480.

132. E. Ungersböck, H. Kosina:
"The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 311 - 314 doi:10.1109/SISPAD.2005.201535.

131. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors";
Talk: IEEE Conference on Nanotechnology (IEEE-NANO), Nagoya; 2005-07-11 - 2005-07-15; in "Proceedings of IEEE-NANO 2005", (2005), Vol.CDROM ISBN: 0-7803-9200-0, 4 page(s) .

130. M. Karner, A. Gehring, H. Kosina:
"Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 97 - 98.

129. M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 95 - 96.

128. E. Ungersböck, H. Kosina:
"Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 10 - 11.

127. H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37.

126. M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 46.

125. M. Pourfath, W.J. Park, H. Kosina, S. Selberherr:
"Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 50 - 51.

124. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"A Physically-Based Electron Mobility Model for Strained Si Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16.

123. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48.

122. M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 128 - 131.

121. M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707, 95 - 98.

120. A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 2005-01-19 - 2005-01-21; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72.

119. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba; (invited) 2004-12-17 - 2004-12-22; in "Extended Abstracts of WOFE 2004", (2004), 6.

118. V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

117. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126.

116. A. Gehring, H. Kosina:
"Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 227 - 228 doi:10.1109/IWCE.2004.1407409.

115. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308.

114. M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 237 - 238 doi:10.1109/IWCE.2004.1407414.

113. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in "Proceeding of the 34th European Solid-State Device Research Conference", (2004), ISBN: 0780384784, 429 - 432.

112. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

111. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69.

110. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1.

109. T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26.

108. H. Kosina:
"Advanced Transport Models for Nanodevices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 2004-09-02 - 2004-09-04; in "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), 35.

107. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
"Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 149 - 152 doi:10.1007/978-3-7091-0624-2_35.

106. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

105. H. Kosina, V. Palankovski:
"Mobility Enhancement in Strained CMOS Devices";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; (invited) 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 101 - 105.

104. E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120.

103. E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Analysis of Carrier Transport in Carbon Nanotube FET Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 1059 - 1061.

102. F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr:
"Static and Transient Simulation of Inelastic Trap-Assisted Tunneling";
Talk: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 2003-10-16 - 2003-10-17; in "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1, 65 - 68.

101. E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 411 - 414.

100. T.V. Gurov, M. Nedjalkov, H. Kosina:
"Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in "Book of Abstracts MCM-2003", (2003), 10.

99. H. Kosina, M. Nedjalkov, S. Selberherr:
"Solution of the Space-Dependent Wigner Equation Using a Particle Model";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

98. M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

97. T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 63 - 66 doi:10.1109/SISPAD.2003.1233638.

96. H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
"Comparison of Numerical Quantum Device Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 171 - 174 doi:10.1109/SISPAD.2003.1233664.

95. S. Smirnov, H. Kosina, S. Selberherr:
"Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 55 - 58 doi:10.1109/SISPAD.2003.1233636.

94. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Quasi-Particle Model of the Electron - Wigner Potential Interaction";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 2003-07-28 - 2003-08-01; in "Proceedings HCIS-13", (2003), Th 5-1.

93. H. Kosina:
"VMC: a Code for Monte Carlo Simulation of Quantum Transport";
Talk: MEL-ARI/NID Workshop, Cork; 2003-06-23 - 2003-06-25; in "Proc. 12th MEL-ARI/NID Workshop", (2003), .

92. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 24.

91. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 35 - 36.

90. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 40 - 41.

89. A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 2003-05-25 - 2003-05-28; in "Book of Abstracts of the 9th International Workshop on Computational Electronics (IWCE)", (2003), 105 - 106.

88. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 2003-05-25 - 2003-05-28; in "Book of Abstracts of the 9th International Workshop on Computational Electronics (IWCE)", (2003), 35 - 36.

87. A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134.

86. T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 105 - 108.

85. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51.

84. H. Kosina, M. Nedjalkov, S. Selberherr:
"Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 190 - 193.

83. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

82. M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Talk: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 2002-12-08 - 2002-12-13; in "Fourth International Conference on Low Dimensional Structures and Devices", (2002), 5.

81. A. Gehring, H. Kosina, S. Selberherr:
"Transmission Coefficient Estimation for High-k Gate Stack Evaluation";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 156 - 159.

80. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Particle Model for Wigner Transport through Tunneling Structures";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 136 - 139.

79. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 235 - 238 doi:10.1109/SISPAD.2002.1034560.

78. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 195 - 198 doi:10.1109/SISPAD.2002.1034550.

77. M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
"Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 187 - 190 doi:10.1109/SISPAD.2002.1034548.

76. S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the 7th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 29 - 32 doi:10.1109/SISPAD.2002.1034509.

75. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"An Impact Ionization Model Including an Explicit Cold Carrier Population";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 572 - 575.

74. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
"The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 544 - 547.

73. A. Gehring, F. Jimenez-Molinos, A. Palma, H. Kosina, S. Selberherr:
"Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), München; 2002-03-07 - 2002-03-08; in "3rd European Workshop on Ultimate Integration of Silicon", (2002), 15 - 18.

72. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 664 - 667.

71. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"Numerical Study of Partial-SOI LDMOSFET Power Devices";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117.

70. M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
"A Wigner Equation for the Nanometer and Femtosecond Transport Regime";
Talk: International Conference on Nanotechnology, Maui; 2001-10-28 - 2001-10-30; in "Proceedings Conf. on Nanotechnology", (2001), ISBN: 0-7803-7215-8, 277 - 281.

69. H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M. Giles, S. Selberherr:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 2001-09-15 - 2001-09-18; in "Book of Abstracts of the 8th International Workshop on Computational Electronics (IWCE)", (2001), 67.

68. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Talk: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 2001-09-15 - 2001-09-18; in "Book of Abstracts of the 8th International Workshop on Computational Electronics (IWCE)", (2001), 4.

67. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
"Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in "Proceedings of the 31st European Solid-State Device Research Conference", (2001), ISBN: 2-914601-01-8, 215 - 218.

66. H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 2001-09-10 - 2001-09-14; in "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 141 - 143.

65. M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 2001-09-10 - 2001-09-14; in "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 58 - 59.

64. T. Grasser, H. Kosina, S. Selberherr:
"An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 46 - 49 doi:10.1007/978-3-7091-6244-6_10.

63. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 54 - 57 doi:10.1007/978-3-7091-6244-6_12.

62. H. Kosina, M. Nedjalkov, S. Selberherr:
"Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 140 - 143 doi:10.1007/978-3-7091-6244-6_31.

61. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Boundary Condition Models for Terminal Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the 6th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 152 - 155 doi:10.1007/978-3-7091-6244-6_34.

60. H. Kosina, R. Kosik, M. Nedjalkov:
"A Hierarchy of Kinetic Equations for Quantum Device Simulation";
Talk: Conference on Applied Mathematics in our Changing World, Berlin; (invited) 2001-09-02 - 2001-09-06; in "Proceedings First SIAM-EMS Conference on Applied Mathematics in our Changing World", (2001), 24.

59. T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 2001-08-27 - 2001-08-31; in "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), 27.

58. H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2001-06-06 - 2001-06-10; in "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), A-23.

57. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"A Simulation Study of Partially Depleted SOI MOSFETs";
Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1, 181 - 186.

56. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 474 - 477.

55. H. Kosina, M. Nedjalkov, S. Selberherr:
"Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 11 - 14.

54. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko; (invited) 2001-02-12 - 2001-02-17; in "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8, 19 - 30.

53. M. Gritsch, H. Kosina, C. Fischer, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 2000-10-25 - 2000-10-27; in "Proceedings EUROSOI 2000", (2000), 1 - 4.

52. M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 2000-05-22 - 2000-05-25; in "Book of Abstracts of the 7th International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6, 144 - 145 doi:10.1109/IWCE.2000.869966.

51. C. Troger, H. Kosina, S. Selberherr:
"A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 2000-01-20 - 2000-01-21; in "European Workshop on Ultimate Integration of Silicon", (2000), 123 - 126.

50. T. Grasser, H. Kosina, S. Selberherr:
"Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the 4th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 151 - 154 doi:10.1109/SISPAD.1999.799283.

49. M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the 4th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 155 - 158 doi:10.1109/SISPAD.1999.799284.

48. V. Palankovski, R. Strasser, H. Kosina, S. Selberherr:
"A Systematic Approach for Model Extraction for Device Simulation Application";
Talk: International Conference on Applied Modelling and Simulation, Cairns; 1999-09-01 - 1999-09-03; in "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1, 463 - 466.

47. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Analytical Model for the Electron Energy Relaxation Time";
Talk: Conference De Dispositivos Electronicos, Madrid; 1999-06-10 - 1999-06-11; in "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5, 263 - 266.

46. H. Kosina:
"The Monte Carlo Method for Semi-classical Charge Transport in Semiconductor Devices";
Talk: Seminar on Monte Carlo Methods (MCM), Varna; 1999-06-07 - 1999-06-11; in "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), 26 - 27.

45. M. Nedjalkov, H. Kosina:
"Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
Talk: Seminar on Monte Carlo Methods (MCM), Varna; 1999-06-07 - 1999-06-11; in "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), 43.

44. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modelling and Simulation, Philadelphia; 1999-05-05 - 1999-05-08; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8, 367 - 370.

43. V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr:
"A New Analytical Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 395 - 398.

42. V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the 3rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 105 - 108 doi:10.1007/978-3-7091-6827-1_29.

41. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity";
Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez; (invited) 1998-05-31 - 1998-06-05; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), P-Th-17.

40. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation";
Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 1998-05-06 - 1998-05-08; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3, M2.4.1..

39. C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Reexamination of Electron Mobility Dependence on Dopants in GaAs";
Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in "Proceedings ESSDERC 97 Conf.", (1997), ISBN: 2-86332-221-4, 304 - 307.

38. H. Kosina, S. Selberherr:
"Technology CAD: Process and Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 1997-09-14 - 1997-09-17; in "Proceedings MIEL 97 Conf.", (1997), ISBN: 0-7803-3664-x, 441 - 450.

37. H. Kosina, G. Kaiblinger-Grujin, S. Selberherr:
"A New Approach to Ionized-Impurity Scattering";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in "Proceedings of the 2nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 205 - 208 doi:10.1109/SISPAD.1997.621373.

36. C. Troger, H. Kosina, S. Selberherr:
"Modeling Nonparabolicity Effects in Silicon Inversion Layers";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in "Proceedings of the 2nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 323 - 326 doi:10.1109/SISPAD.1997.621403.

35. G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Talk: International Conference on Defects in Semiconductors, Aveiro; 1997-07-21 - 1997-07-25; in "Proceedings Intl. Conf. on Defects in Semiconductors", (1997), Vol.Proceedings Part 2, Section 11, 939 - 944.

34. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Electron Mobility in Doped Semiconductors";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in "Abstracts Intl. Conf. on Computational Physics", (1997), 30 - 31.

33. C. Troger, H. Kosina, S. Selberherr:
"A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in "Abstracts Intl. Conf. on Computational Physics", (1997), 26 - 27.

32. H. Kosina, C. Troger:
"SPIN - A Schrödinger Poisson Solver Including Nonparabolic Bands";
Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 1997-05-28 - 1997-05-30; in "Book of Abstracts of the 5th International Workshop on Computational Electronics (IWCE)", (1997), P51.

31. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 1997-05-28 - 1997-05-30; in "Book of Abstracts of the 5th International Workshop on Computational Electronics (IWCE)", (1997), FrP1.

30. C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in InP";
Talk: International Conference on Indium Phosphide an Related Materials, Hyannis; 1997-05-11 - 1997-05-15; in "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), 280 - 283.

29. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Monte Carlo Simulation of Electron Transport in Doped Silicon";
Talk: High Performance Computing Asia Conference, Seoul; 1997-04-28 - 1997-05-02; in "Proceedings High Performance Computing Asia 1997 Conf.", (1997), 444 - 449.

28. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors";
Talk: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in "Abstracts 21. Condensed Matter Physics Meeting", (1997), TA02.

27. C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys";
Poster: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in "Abstracts 21. Condensed Matter Physics Meeting", (1997), TP21.

26. C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System";
Talk: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 1996-09-23 - 1996-09-27; in "Proceedings Intl. Symposium on Compound Semiconductors", (1996), 675 - 678.

25. C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System";
Talk: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 1996-09-23 - 1996-09-27; in "Abstracts International Symposium on Compound Semiconductors (ISCS)", (1996), 30.

24. C. Wasshuber, H. Kosina:
"A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in "Proceedings of the 1st International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 135 - 136 doi:10.1109/SISPAD.1996.865311.

23. C. Wasshuber, H. Kosina:
"A Multipurpose Single Electron Device and Circuit Simulator";
Talk: Silicon Nanoelectronics Workshop, Honolulu; 1996-06-09 - 1996-06-10; in "Abstracts Silicon Nanoelectronics Workshop", (1996), 37.

22. C. Wasshuber, H. Kosina:
"A Single Electron Device and Circuit Simulator";
Talk: Nanostructures and Mesoscopic Systems, Santa Fe; 1996-05-19 - 1996-05-24; in "Proceedings Nanostructures and Mesoscopic Systems", (1996), 43.

21. M. Harrer, H. Kosina:
"A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 1995-10-30 - 1995-11-02; in "Book of Abstracts of the 4th International Workshop on Computational Electronics (IWCE)", (1995), 24.

20. G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations";
Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 1995-10-30 - 1995-11-02; in "Book of Abstracts of the 4th International Workshop on Computational Electronics (IWCE)", (1995), 25.

19. C. Wasshuber, H. Kosina:
"Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge";
Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 1995-10-30 - 1995-11-02; in "Book of Abstracts of the 4th International Workshop on Computational Electronics (IWCE)", (1995), 4.

18. H. Kosina, T. Simlinger:
"Modeling Concepts for Modern Semiconductor Devices";
Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 1995-10-11 - 1995-10-14; in "Proceedings CAS 95 Intl. Semiconductor Conference", (1995), ISBN: 0-7803-2647-4, 27 - 36.

17. T. Simlinger, H. Kosina, M. Rottinger, S. Selberherr:
"MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices";
Talk: European Solid-State Device Research Conference (ESSDERC), Den Haag; 1995-09-25 - 1995-09-27; in "Proceedings ESSDERC 95 Conference", (1995), ISBN: 2-86332-182-x, 83 - 86.

16. T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, S. Selberherr:
"Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 1995-09-24 - 1995-09-28; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 589 - 591.

15. H. Kosina, M. Harrer, P. Vogl, S. Selberherr:
"A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands";
Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 1995-09-06 - 1995-09-08; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 396 - 399 doi:10.1007/978-3-7091-6619-2_96.

14. C. Köpf, H. Kosina, S. Selberherr:
"Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation";
Talk: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 1995-08-28 - 1995-09-02; in "Proceedings Intl.Symposium on Compound Semiconductors", (1995), 1255 - 1260.

13. C. Köpf, H. Kosina, S. Selberherr:
"Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation";
Talk: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 1995-08-28 - 1995-09-02; in "Abstracts Intl.Symposium on Compound Semiconductors", (1995), 108.

12. M. Hackel, H. Kosina, S. Selberherr:
"Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields";
Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 1993-09-07 - 1993-09-09; in "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5, 65 - 68 doi:10.1007/978-3-7091-6657-4_15.

11. S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
"The Viennese Integrated System for Technology CAD Applications";
Talk: Workshop on Technology CAD Systems, Wien; (invited) 1993-09-06 in "Proceedings Technology CAD Systems Workshop", (1993), ISBN: 3-211-82505-3, 197 - 236 doi:10.1007/978-3-7091-9315-0_10.

10. M. Hackel, H. Kosina, S. Selberherr:
"Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures";
Talk: International Workshop on Computational Electronics (IWCE), Leeds, UK; 1993-08-11 - 1993-08-13; in "Proceedings of the 2nd International Workshop on Computational Electronics (IWCE)", (1993), 186 - 190.

9. P. Grubmair, P. Habas, O. Heinreichsberger, H. Kosina, C. Sala, S. Selberherr:
"Recent Advances in Device Simulation at the TU-Vienna";
Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 1992-10-06 - 1992-10-11; in "Proceedings CAS 92 Conference", (1992), 347 - 358.

8. H. Kosina, S. Selberherr:
"A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration";
Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 1992-05-31 - 1992-06-01; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 117 - 122.

7. H. Kosina, S. Selberherr:
"Improved Algorithms in Monte Carlo Device Simulation";
Talk: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; (invited) 1992-05-28 - 1992-05-29; in "Proceedings of the 1st International Workshop on Computational Electronics (IWCE)", (1992), 43 - 48.

6. H. Kosina, P. Lindorfer, S. Selberherr:
"Monte-Carlo-Poisson Coupling Using Transport Coefficients";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 1991-09-16 - 1991-09-19; in "Proceedings ESSDERC 91", (1991), ISBN: 0-444-89066-1, 53 - 56 doi:10.1016/0167-9317(91)90182-D.

5. H. Kosina, S. Selberherr:
"Analysis of Filter Techniques for Monte-Carlo Device Simulation";
Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 1991-09-12 - 1991-09-14; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 251 - 256.

4. H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
"Simulation of ULSI Processes and Devices";
Talk: Computer Aided Innovation of New Materials, Tokyo; (invited) 1990-08-28 - 1990-08-31; in "Abstracts Computer Aided Innovation of New Materials 90", (1990), 46.

3. H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
"Simulation of ULSI Processes and Devices";
Talk: Computer Aided Innovation of New Materials, Tokyo, Japan; (invited) 1990-08-28 - 1990-08-31; in "Proceedings Computer Aided Innovation of New Materials 90", (1990), ISBN: 0-444-88864-0, 723 - 728.

2. H. Kosina, S. Selberherr:
"Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Sendai; 1990-08-22 - 1990-08-24; in "Proceedings Solid State Devices and Materials Conference", (1990), ISBN: 4-930813-41-7, 139 - 142.

1. S. Selberherr, H. Kosina:
"Simulation of Nanometer MOS-Devices with MINIMOS";
Talk: VLSI Process and Device Modeling Workshop (VPAD), Kawasaki; (invited) 1990-08-20 - 1990-08-21; in "Proceedings 1990 VLSI Process/Device Modeling Workshop", (1990), 2 - 5.


Talks and Poster Presentations (without Proceedings-Entry)


31. H. Kosina:
"Semiconductor Device Modeling at the Nanoscale";
Talk: 42nd International Conference on Nano Engineering, MNE 2016, Wien; (invited) 2016-09-19 - 2016-09-23; .

30. M. Thesberg, N. Neophytou, M. Pourfath, H. Kosina:
"Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials";
Talk: Energy Materials Nanotechnology (EMN) - Thermoelectric Materials, Orlando, USA; (invited) 2016-02-22 - 2016-02-25; .

29. H. Kosina:
"Blessing or curse: Dissipative quantum transport in nano-scale devices";
Talk: Workshop "From Atom to Transistor" at the 45th European Solid-State Device Research Conference (ESSDERC), Graz; (invited) 2015-09-18.

28. A. Harrer, P. Reininger, R. Gansch, B. Schwarz, D. MacFarland, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"Quantum Cascade Detectors for Sensing Applications";
Talk: ICAVS8, Wien; 2015-07-12 - 2015-07-17; .

27. A. Harrer, P. Reininger, B. Schwarz, R. Gansch, S. Kalchmair, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"Advances in Quantum Cascade Detector Design";
Talk: 4th International Nanophotonics Meeting 2014, Igls; 2014-10-23 - 2014-10-25; .

26. M. Moradinasab, M. Pourfath, O. Baumgartner, H. Kosina:
"Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
Poster: The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA; 2013-09-15 - 2013-09-20; .

25. P. Reininger, B. Schwarz, A. Wirthmüller, A. Harrer, O. Baumgartner, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, L. Hvozdara, H. Kosina, G. Strasser:
"Towards higher temperature operation of quantum cascade detectors";
Talk: ITQW, New York, USA; 2013-09-15 - 2013-09-20; .

24. B. Schwarz, P. Reininger, D. Ristanic, O. Baumgartner, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, H. Kosina, G. Strasser:
"On-Chip mid-infrared light generation and detection";
Talk: ITQW, New York, USA; (invited) 2013-09-15 - 2013-09-20; .

23. G. Strasser, B. Schwarz, P. Reininger, O. Baumgartner, W. Schrenk, T. Zederbauer, H. Detz, A. M. Andrews, H. Kosina:
"Bi-functional Quantum Cascade Laser/Detectors for Integrated Photonics";
Talk: ÖPG-Jahrestagung, Linz; (invited) 2013-09-02 - 2013-09-06; .

22. A. Harrer, B. Schwarz, P. Reininger, R. Gansch, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
"Intersubband Detectors";
Talk: 3rd International Nanophotonics Meeting 2013, Salzburg; 2013-09-01 - 2013-09-03; .

21. B. Schwarz, P. Reininger, O. Baumgartner, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, H. Kosina, G. Strasser:
"Towards Mid-Infrared On-Chip Sensing utilizing a bi-functional Quantum Cascade Laser/Detector";
Talk: Conference on Electronic Properties of Two-Dimensional Systems / Modulated Semiconductor Structures (EP2Ds-MSS), Wroclaw, Polen; 2013-07-01 - 2013-07-05; .

20. B. Schwarz, P. Reininger, W. Schrenk, H. Detz, O. Baumgartner, T. Zederbauer, A. M. Andrews, H. Kosina, G. Strasser:
"Monolithically integrated quantum cascade laser and detector";
Talk: CLEO Europe 2013, München, Deutschland; 2013-05-12 - 2013-05-16; .

19. B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"Same-frequency detector and laser utilizing bi-functional quantum cascade active regions";
Talk: SPIE Photonics West 2013, San Francisco; 2013-02-02 - 2013-02-07; .

18. Z. Stanojevic, H. Kosina:
"Efficient Numerical Analysis of Dielectric Cavities";
Talk: European Semiconductor Laser Workshop (ESLW), Brussels, Belgium; 2012-09-21 - 2012-09-22; .

17. B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
"Optimization of intersubband devices for dual-color emission, absorption and detection";
Talk: ÖPG-Jahrestagung, Graz; 2012-09-18 - 2012-09-21; .

16. P. Reininger, B. Schwarz, S. Kalchmair, R. Gansch, O. Baumgartner, Z. Stanojevic, H. Kosina, W. Schrenk, G. Strasser:
"Simulation of a dual wavelength quantum cascade laser in a photonic crystal cavity";
Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 2012-09-02 - 2012-09-06; .

15. B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
"Dual-color quantum cascade structure for coherent emission and detection";
Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 2012-09-02 - 2012-09-06; .

14. P. Reininger, B. Schwarz, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
"Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser";
Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 2012-07-29 - 2012-08-03; .

13. B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
"A mid-infrared dual wavelenght quantum cascade structure designed for both emission and detection";
Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 2012-07-29 - 2012-08-03; .

12. B. Schwarz, P. Reininger, O. Baumgartner, Z. Stanojevic, H. Kosina, G. Strasser:
"Dual wavelength quantum cascade structure that can act both as laser and detector";
Talk: MIRTHE-IROn-SensorCAT virtual conference 2012, Princeton; 2012-06-26 - 2012-06-27; .

11. G. Milovanovic, O. Baumgartner, M. Nobile, H. Detz, A. M. Andrews, G. Strasser, H. Kosina:
"Monte Carlo Simulation of an Al-free Quantum Cascade Laser";
Talk: MIRTHE-IROn-SensorCAT virtual conference, Princenton; 2011-01-19 - 2011-01-20; .

10. A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
"Tuning the Electronic Properties of Ultra-strained Silicon Nanowires";
Talk: MRS Fall Meeting, Boston, USA; 2010-11-29 - 2010-12-03; .

9. L. Li, G. Meller, H. Kosina:
"Micro and Macroscopic Modeling of Charge Flows in Molecularly Disordered Organic Semiconductors";
Talk: SISPAD 2007 Companion Workshop 'Organic Electronics', Wien; 2007-09-28.

8. H. Kosina, V. Sverdlov:
"Impact of Strain and Defects on CMOS Process and Device Performance";
Talk: 15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece; (invited) 2007-06-20 - 2007-06-23; .

7. M. Nedjalkov, H. Kosina, D. Vasileska:
"Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation";
Talk: Large Scale Scientific Computations, Sozopol; 2007-06-05 - 2007-06-09; .

6. H. Kosina:
"Numerical Simulation of Quantum Devices Utilizing the Wigner Function Formalism";
Talk: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Wien; 2006-02-16 - 2006-02-17; .

5. H. Kosina:
"The Wigner Equation for Nanoscale Device Simulation";
Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; (invited) 2004-11-04 - 2004-11-05; .

4. V. Sverdlov, H. Kosina, Ch. Ringhofer, M Nedjalkov, S. Selberherr:
"Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm";
Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; 2004-11-04 - 2004-11-05; .

3. H. Kosina, M. Nedjalkov:
"The Wigner Equation for Quantum Device Modeling";
Talk: Workshop on Quantum and Many-Body Effects in Nanoscale Devices, Arizona State University; (invited) 2003-10-24 - 2003-10-25; .

2. A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; .

1. G. Kaiblinger-Grujin, C. Köpf, H. Kosina, S. Selberherr:
"Dependence of Electron Mobility on Impurities in Compound Semiconductors";
Talk: III-V Semiconductor Device Simulation Workshop, Turin; 1997-10-16 - 1997-10-17; .


Habilitation Theses


1. H. Kosina:
"Current Transport in Electronic Devices";
Technische Universität Wien/Fakultät für Elektrotechnik und Informationstechnik, (1997), .


Doctor's Theses (authored and supervised)


13. Z. Stanojevic:
"Physical Mobility Modeling for TCAD Device Simulation";
Reviewer: H. Kosina, F. Gamiz; E360, 2016, oral examination: 2016-09-26.

12. M. Moradinasab:
"Optical Properties of Semiconductor Nanostructures";
Reviewer: H. Kosina, T. Fromherz; E360, 2015, oral examination: 2015-04-24.

11. H. Karamitaheri:
"Thermal and Thermoelectric Properties of Nanostructures";
Reviewer: H. Kosina, E. Bauer; E360, 2013, oral examination: 2013-07-18.

10. G. Milovanovic:
"Numerical Modeling of Quantum Cascade Lasers";
Reviewer: H. Kosina, D. Süss; Institut für Mikroelektronik, 2011, oral examination: 2011-03-30.

9. G. Karlowatz:
"Advanced Monte Carlo Simulation for Semiconductor Devices";
Reviewer: H. Kosina, E. Benes; Institut für Mikroelektronik, 2009, oral examination: 2009-06-24.

8. L. Li:
"Charge Transport in Organic Semiconductor Materials and Devices";
Reviewer: H. Kosina, D. Süss; Institut für Mikroelektronik, 2008, oral examination: 2008-02-08.

7. S. Dhar:
"Analytical Mobility Models for Strained Silicon-Based Devices";
Reviewer: H. Kosina, G. Magerl; Institut für Mikroelektronik, 2007, oral examination: 2007-08-30.

6. M. Pourfath:
"Numeric Study of Quantum Transport in Carbon Nanotube-Based Transistors";
Reviewer: H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007, oral examination: 2007-07-03.

5. E. Ungersböck:
"Advanced Modeling of Strained CMOS Technology";
Reviewer: H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007, oral examination: 2007-04-23.

4. H. Kim:
"Design, simulation and fabrication of micro/nano functional structures using ION beams";
Reviewer: G. Hobler, H. Kosina; Institut für Festkörperelektronik, 2007, oral examination: 2007-04-20.

3. S. Smirnov:
"Physical Modeling of Electron Transport in Strained Silicon and Silicon-Germanium";
Reviewer: H. Kosina, K. Unterrainer; Institut für Mikroelektronik, 2003, oral examination: 2003-12-17.

2. M. Gritsch:
"Numerical Modeling of Silicon-on-Insulator MOSFETs";
Reviewer: H. Kosina, E. Gornik; Institut für Mikroelektronik, 2002, oral examination: 2002-12-20.

1. H. Kosina:
"Simulation des Ladungstransportes in elektronischen Bauelementen mit Hilfe der Monte-Carlo-Methode";
Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1992, oral examination: 1992-06-09.


Diploma and Master Theses (authored and supervised)


30. K. Schnass:
"Simulation of Ballistic Two-Dimensional Quantum Transport";
Supervisor: H. Kosina, O. Baumgartner; E360, 2016, final examination: 2016-11-18.

29. M. Kampl:
"Implementation of a backward Monte Carlo algorithm to investigate hot carriers in semiconductor devices";
Supervisor: H. Kosina, Z. Stanojevic; E360, 2015, final examination: 2015-11-20.

28. R. Sonderfeld:
"Numerical Calculation of Semiconductor Band Structures";
Supervisor: H. Kosina, Z. Stanojevic; E360, 2014, final examination: 2014-11-28.

27. S. Wolf:
"Monte-Carlo raytracing for thermal transport simulation";
Supervisor: H. Kosina; E360, 2013, final examination: 2013-06-13.

26. C. Kernstock:
"Design and Implementation of TCAD Environment Tools";
Supervisor: H. Kosina, M. Karner; Institut für Mikroelektronik, 2008, final examination: 2008-11-28.

25. B. Höflechner:
"A Random Number Generator Library for Monte Carlo Simulation";
Supervisor: H. Kosina, E. Ungersböck; Institut für Mikroelektronik, 2006, final examination: 2006-06-22.

24. M. Wagner:
"A Base Library for Full Band Monte Carlo Simulations";
Supervisor: T. Grasser, H. Kosina; Institut für Mikroelektronik, 2004, .

23. E. Ungersböck:
"Numerische Berechnung der Bandstruktur von Halbleitern";
Supervisor: P. Pongratz, H. Kosina; Institut für Mikroelektronik, 2002, final examination: 2002-05-15.

22. St. Ungersböck:
"Numerische Berechnung der Bandstruktur von Halbleitern";
Supervisor: P. Pongratz, H. Kosina; Institut für Festkörperphysik, 2002, .

21. M. Gritsch:
"Implementation of a Non-Parabolic Energy-Transport Model";
Supervisor: H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999, .

20. M. El Ghazi:
"Erstellung eines Programmes zur Dreidimensionalen Visualisierung von Simulationsdaten aus dem TCAD-Framework VISTA";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997, .

19. M. Standfest:
"Numerische Berechnung der Zustandsdichte von Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997, .

18. G. Zankl:
"Über die Erzeugung von Gitterstützpunkten in Dreidimensionalen Geometrien";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1997, .

17. R. Baldemair:
"Numerische Verfahren zur Darstellung von Energiebändern in Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996, .

16. S. Karlich:
"Simulation von Extrinsischer Diffusion in Silizium";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996, .

15. G. Koder:
"Analyse eines Hall Sensor-IC";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1996, .

14. T. Grasser:
"Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, .

13. M. Harrer:
"Monte-Carlo Simulation des Stationären Löchertransportes in Kovalenten Halbleitern mittels Reihenentwicklung des Valenzbandes";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, .

12. M. Müllauer:
"Modellierung von Paarstreuungen und Simulation ihrer Auswirkungen auf einen 1µm-BiCMOS-Prozeß";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, .

11. C. Troger:
"Numerische Modellierung des Elektronentransports in Halbleiter-Heteroübergängen";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, .

10. L. Wang:
"Monte-Carlo Simulation des Elektronentransports in Technologisch Signifikanten Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, .

9. R. Sabelka:
"Entwicklung einer X-Windows-Schnittstelle für das Programm OPERA";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1994, .

8. B. Czermak:
"Monte-Carlo Simulation des stationären Elektronentransportes in polaren Halbleitern";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1993, .

7. A. Lugbauer:
"Numerische Simulation von Band-zu-Band Tunneleffekten";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1991, .

6. R. Bauer:
"Numerische Bereichstransformation für die zweidimensionale Prozeß -Simulation";
Supervisor: S. Selberherr, K. Wimmer, H. Kosina; Institut für Mikroelektronik, 1990, .

5. G. Mayer:
"Anwendung des PIF (Profile Interchange Format) in der Prozeß- und Device-Simulation";
Supervisor: S. Selberherr, O. Heinreichsberger, H. Kosina; Institut für Mikroelektronik, 1990, .

4. F. Fasching:
"F2C - Ein Übersetzer von FORTRAN nach C";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1989, .

3. C. Fischer:
"Gittererzeugung in der zweidimensionalen Halbleiter-Bauelemente-Simulation";
Supervisor: G. Nanz, P. Dickinger, H. Kosina, S. Selberherr; Institut für Mikroelektronik, 1989, .

2. H. Pimingstorfer:
"Automatische Übersetzung von FORTRAN nach C";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1989, .

1. M. Stiftinger:
"Lösungsverfahren für die diskretisierte Kontinuitätsgleichung";
Supervisor: S. Selberherr, O. Heinreichsberger, H. Kosina; Institut für Mikroelektronik, 1989, .


Scientific Reports


8. T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl:
"Customized Software Development Report";
(2010), 22 page(s) .

7. H. Kosina, J. Cervenka:
"MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems";
(2010), 24 page(s) .

6. D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina:
"Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits";
(2007), 107 page(s) .

5. M. Karner, O. Baumgartner, H. Kosina:
"Threshold Voltage Modeling in Strained Si using VSP";
(2007), 26 page(s) .

4. M. Pourfath, H. Kosina:
"Simulation of Carbon Nanotube Transistors";
(2007), 42 page(s) .

3. K. Dragosits, C. Harlander, R. Kosik, H. Kosina, M. Nedjalkov, S. Selberherr:
"VISTA Status Report I";
(2000), 39 page(s) .

2. K. Dragosits, T. Grasser, H. Kosina, R. Mlekus, W. Pyka, S. Selberherr:
"VISTA Status Report I";
(1998), 19 page(s) .

1. M. Knaipp, H. Kosina, R. Mlekus, M. Radi, M. Rottinger, S. Selberherr:
"VISTA Status Report I";
(1997), 31 page(s) .


Patents


2. W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
"Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
Patent: United States, No. US20080121996A1; submitted: 2005-09-13, granted: 2008-05-29.

1. W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath:
"Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same";
Patent: Korea, No. EP1655791; submitted: 2005-09-09, granted: 2006-05-10.