TU Home


Publication Database Home

Publication list for
Alexander Makarov
as author or essentially involved person

119 records


Publications in Scientific Journals


14. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"CMOS-Compatible Spintronic Devices: A Review";
Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006.

13. T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of multipurpose spintronic devices";
International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215.

12. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023.

11. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141.

10. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Spin Transfer Oscillator";
Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936.

9. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana, 42, (2013), 205 - 211.

8. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Multiple Purpose Spin Transfer Torque Operated Devices";
Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W.

7. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030.

6. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565.

5. A. Makarov, V. Sverdlov, S. Selberherr:
"Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020.

4. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015.

3. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376.

2. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503.

1. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8.


Contributions to Books


12. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
in "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6.

11. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
in "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., (invited) 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001.

10. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
in "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5", F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst.

9. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
in "Future Information Engineering", G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

8. V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33.

7. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862.

6. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory";
in "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2013, ISBN: 978-1118-44216-6, 93 - 101 doi:10.1002/9781118678107.ch6.

5. A. Makarov, V. Sverdlov, S. Selberherr:
"MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242842.

4. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
in "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4 doi:10.1109/ICCDCS.2012.6188899.

3. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72.

2. J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
"Towards a Free Open Source Process and Device Simulation Framework";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242867.

1. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
in "Lecture Notes in Computer Science, Vol. 6046", I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer, 2011, ISBN: 978-3-642-18465-9, 87 - 94 doi:10.1007/978-3-642-18466-6_9.


Talks and Poster Presentations (with Proceedings-Entry)


92. S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
"Exploiting Spin-Transfer Torque for Non-Volatile Computing";
Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 2017-03-16 - 2017-03-18; in "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), 130.

91. P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub:
"Computational and Numerical Challenges in Semiconductor Process Simulation";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 46.

90. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-16; in "Proceedings of the ESSDERC 46th European Solid-State Device Research Conference", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648.

89. V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210.

88. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
Talk: SISPAD Workshop, Nürnberg, Germany; 2016-09-05 in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), .

87. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
Talk: Spintronics IX, San Diego, CA, USA; (invited) 2016-08-28 - 2016-09-01; in "Proceedings of SPIE", (2016), Vol.9931, 12 page(s) doi:10.1117/12.2236151.

86. A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 2016-07-04 - 2016-07-08; in "Proceedings of the ICEM 2016", (2016), 1 page(s) .

85. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 2016-05-25 - 2016-05-27; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) .

84. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Nanoelectronics with Spin";
Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 2016-04-04 - 2016-04-06; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20.

83. V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
"Silicon Spintronics";
Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 2016-03-21 - 2016-03-24; in "Book of Abstracts of the 2016 EMN Meeting on Magnetic Materials", (2016), 37 - 38.

82. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
IEEE Xplore, in "Proceedings of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479.

81. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"A Novel Method of SOT-MRAM Switching";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

80. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
Talk: Energy Materials Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 2015-11-16 - 2015-11-19; in "Book of Abstract of the Energy Materials Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16.

79. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 2015-10-12 - 2015-10-14; in "Technical Digest of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 105 - 106.

78. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 140 - 141.

77. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 2015-09-24 - 2015-09-26; in "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), 175.

76. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357.

75. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"CMOS-Compatible Spintronic Devices";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 2015-09-01 - 2015-09-04; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103.

74. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics: Recent Advances and Challenges";
International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 2015-06-29 - 2015-06-30; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7.

73. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62.

72. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

71. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 2015-04-13 - 2015-04-16; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45.

70. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon and CMOS-Compatible Spintronics";
Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 2015-03-15 - 2015-03-17; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), Vol.28, ISBN: 978-1-61804-286-6, 17 - 20.

69. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 2015-02-24 - 2015-02-27; in "Proceedings of 21st Iberchip Worshop", (2015), Vol.23, .

68. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

67. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"New Design of Spin-Torque Nano-Oscillators";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63.

66. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62.

65. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166.

64. V. Sverdlov, A. Makarov, S. Selberherr:
"Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 2014-07-06 - 2014-07-08; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19.

63. V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17.

62. T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194.

61. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 2014-05-12 - 2014-05-14; in "Proceedings of the 29th International Conference on Microelectronics", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081.

60. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling of Spin-Based Silicon Technology";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891.

59. A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 1 page(s) .

58. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
8813, SPIE Digital Library, in "Proceedings of SPIE", (2013), ISBN: 978-0-8194-9728-4, 88132Q1 - 88132Q9 doi:10.1117/12.2025568.

57. A. Makarov, V. Sverdlov, S. Selberherr:
"Fast Switching STT-MRAM Cells for Future Universal Memory";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 2013-12-17 - 2013-12-20; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) .

56. A. Makarov, V. Sverdlov, S. Selberherr:
"Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

55. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457.

54. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 2013-11-01 - 2013-11-02; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7.

53. A. Makarov, V. Sverdlov, S. Selberherr:
"Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797.

52. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69.

51. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101.

50. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: Conf. on Spintronics (SPINTRONICS), San Diego, USA; (invited) 2013-08-25 - 2013-08-29; in "Proceedings of SPIE", (2013), Vol.8813, ISBN: 978-0-8194-9728-4, 88132Q1-2Q9 doi:10.1117/12.2025568.

49. A. Makarov, V. Sverdlov, S. Selberherr:
"Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165.

48. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272.

47. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339.

46. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75.

45. V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Devices in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71.

44. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239.

43. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21.

42. V. Sverdlov, A. Makarov, S. Selberherr:
"Fast Switching in MTJs with a Composite Free Layer";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291.

41. T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Fully Electrically Read- Write Magneto Logic Gates";
Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in "Book of Abstracts", (2012), 1 page(s) .

40. A. Makarov, V. Sverdlov, S. Selberherr:
"High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer";
Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 2012-09-25 - 2012-09-27; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) .

39. A. Makarov, V. Sverdlov, S. Selberherr:
"Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232.

38. A. Makarov, V. Sverdlov, S. Selberherr:
"STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4.

37. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3.

36. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3.

35. A. Makarov, V. Sverdlov, S. Selberherr:
"Reduction of the Switching Current in Spin Transfer Torque Random Access Memory";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 2012-06-25 - 2012-06-29; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49.

34. A. Makarov, V. Sverdlov, S. Selberherr:
"Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226.

33. J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
"Towards a Free Open Source Process and Device Simulation Framework";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 141 - 142.

32. A. Makarov, V. Sverdlov, S. Selberherr:
"Recent Developments in Advanced Memory Modeling";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings of the 28th International Conference on Microelectronics", (2012), ISBN: 978-1-4673-0235-7, 49 - 52.

31. A. Makarov, S. Selberherr, V. Sverdlov:
"Emerging Non-Volatile Memories for Ultra-Low Power Applications";
Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 2012-04-23 - 2012-04-24; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24.

30. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling Emerging Non-Volatile Memories: Current Trends and Challenges";
Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 2012-04-01 - 2012-04-02; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056.

29. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 2012-03-14 - 2012-03-17; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887.

28. V. Sverdlov, A. Makarov, S. Selberherr:
"Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer";
Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) .

27. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

26. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

25. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

24. D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
"An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

23. A. Makarov, S. Selberherr, V. Sverdlov:
"Modeling of Advanced Memories";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568.

22. A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
"Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181.

21. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) .

20. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444.

19. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049.

18. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189.

17. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238.

16. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229.

15. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

14. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

13. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64.

12. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in "219th ECS Meeting", (2011), Vol.Vol.35, No.5, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806.

11. A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr:
"Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method";
Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 2011-03-28 - 2011-04-01; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) .

10. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998.

9. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60.

8. A. Makarov, V. Sverdlov, S. Selberherr:
"A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934.

7. A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr:
"First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory";
Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186.

6. A. Makarov, V. Sverdlov, S. Selberherr:
"Monte Carlo Simulation of Bipolar Resistive Switching Memories";
Talk: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22.

5. A. Makarov, V. Sverdlov, S. Selberherr:
"A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399.

4. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517.

3. A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39.

2. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312.

1. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 141.


Doctor's Theses (authored and supervised)


1. A. Makarov:
"Modeling of Emerging Resistive Switching Based Memory Cells";
Reviewer: V. Sverdlov, S. Cristoloveanu; E360, 2014, oral examination: 2014-03-18.