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Publication list for
Siegfried Selberherr
as author or essentially involved person

1833 records


Books and Editorships


46. K. Matsumoto, B. Jonker, J. Weinbub, T. Machida, S. Selberherr, S.M. Goodnick:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1, 243 page(s) .

45. V. Sverdlov, S. Selberherr:
"Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
Solid-State Electronics, Elsevier, (2017), ISSN: 0038-1101, 206 page(s) .

44. J. Weinbub, D.K. Ferry, I. Knezevic, M. Nedjalkov, S. Selberherr:
"Book of Abstracts of the 2nd International Wigner Workshop (IW2)";
Institute for Microelectronics, TU Wien, Wien, (2017), ISBN: 978-3-200-05129-4, 51 page(s) .

43. V. Sverdlov, S. Selberherr:
"Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016";
Solid-State Electronics, 128, (2017), 1 - 2 doi:10.1016/j.sse.2016.10.015.

42. B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4, 88 page(s) .

41. V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr:
"2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
IEEE, (2016), ISBN: 978-1-4673-8608-1, 272 page(s) .

40. V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr:
"2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-29-8, 166 page(s) .

39. V. Sverdlov, S. Selberherr, F. Gamiz, S. Cristoloveanu:
"Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)";
IEEE Xplore, in "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-1-4673-8609-8, 1 doi:10.1109/ULIS.2016.7440034.

38. Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen:
"Advanced CMOS-Compatible Semiconductor Devices 17";
The Electrochemical Society, (2015), ISBN: 978-1-62332-238-0, 365 page(s) .

37. M. Pourfath:
"The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2014), ISBN: 978-3-7091-1800-9, 256 page(s) doi:10.1007/978-3-7091-1800-9.

36. V. Sverdlov, B. Jonker, K. Ishibashu, S.M. Goodnick, S. Selberherr:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2014), ISBN: 978-3-901578-28-1, 84 page(s) .

35. N. Mori, S. Selberherr:
"16th International Workshop on Computational Electronics Book of Abstracts";
Society for Micro- and Nanoelectronics, (2013), ISBN: 978-3-901578-26-7, 269 page(s) .

34. Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin:
"Advanced Semiconductor-on-Insulator Technology and Related Physics 16";
The Electrochemical Society, (2013), ISBN: 978-1-62332-027-0, 220 page(s) .

33. K. Ishibashi, S.M. Goodnick, S. Selberherr, A. Fujiwara:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2012), ISBN: 978-3-901578-25-0, 100 page(s) .

32. S.-M Hong, A.-T Pham, C. Jungemann:
"Deterministic Solvers for the Boltzmann Transport Equation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2011), ISBN: 978-3-7091-0777-5, 227 page(s) doi:10.1007/978-3-7091-0778-2.

31. Y. Omura, F. Gamiz, H. Ishii, J. A. Martino, B.-Y. Nguyen, J.-P. Raskin, S. Selberherr:
"Advanced Semiconductor-on-Insulator Technology and Related Physics 15";
The Electrochemical Society, (2011), ISBN: 978-1-56677-866-4, 333 page(s) .

30. V. Sverdlov:
"Strain-Induced Effects in Advanced MOSFETs";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2011), ISBN: 978-3-7091-0381-4, 252 page(s) doi:10.1007/978-3-7091-0382-1.

29. E. Sangiorgi, A. Asenov, H. Bennett, R. Dutton, D. Esseni, M. Giles, M. Hane, K. Nishi, J. Ranaweera, S. Selberherr:
"Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements";
IEEE Transactions on Electron Devices, 58, (2011), 2190 - 2196 doi:10.1109/TED.2011.2160884.

28. R. Klima, S. Selberherr:
"Programmieren in C, 3. Auflage";
Springer-Verlag, Wien - New York, Wien, (2010), ISBN: 978-3-7091-0392-0, 366 page(s) doi:10.1007/978-3-7091-0393-7.

27. H. Ceric, S. Selberherr:
"Editorial Preface to the Special Section on Electromigration Published in March 2009";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 103 doi:10.1109/TDMR.2009.2020086.

26. H. Kosina, S. Selberherr:
"The Field of Computational Electronics from a European Perspective (Guest Editorial)";
Journal of Computational Electronics, 8, (2009), 173 doi:10.1007/s10825-009-0302-2.

25. J. W. Swart, S. Selberherr, A. A. Susin, J. A. Diniz, N. Morimoto:
"Microelectronics Technology and Devices - SBMICRO 2008";
The Electrochemical Society, (2008), ISBN: 978-1-56677-646-2, 661 page(s) .

24. T. Grasser, S. Selberherr:
"Simulation of Semiconductor Processes and Devices 2007";
Springer-Verlag, Wien - New York, Wien, (2007), ISBN: 978-3-211-72860-4, 460 page(s) doi:10.1007/978-3-211-72861-1.

23. R. Klima, S. Selberherr:
"Programmieren in C, 2. Auflage";
Springer-Verlag, Wien - New York, Wien, (2007), ISBN: 978-3-211-72000-4, 366 page(s) .

22. T. Grasser, S. Selberherr:
"Modelling the Negative Bias Temperature Instability (Editorial)";
Microelectronics Reliability, 47, (2007), 839 - 840 doi:10.1016/j.microrel.2006.10.005.

21. H. Kosina, S. Selberherr:
"International Workshop on Computational Electronics (Editorial)";
Journal of Computational Electronics, 5, (2007), 283 - 284 doi:10.1007/s10825-006-0001-1.

20. E. Sangiorgi, A. Asenov, H.S. Bennett, R.W. Dutton, D. Esseni, M. Giles, M. Hane, C. Jungemann, K. Nishi, S. Selberherr, S. Takagi:
"Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices";
IEEE Transactions on Electron Devices, 54, (2007), 2072 - 2078 doi:10.1109/TED.2007.905342.

19. H. Kosina, S. Selberherr:
"11th International Workshop on Computational Electronics Book of Abstracts";
Technische Universität Wien, Institut für Mikroelektronik, Wien, (2006), ISBN: 3-901578-16-1, 400 page(s) .

18. V. Palankovski, R. Quay:
"Analysis and Simulation of Heterostructure Devices";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2004), ISBN: 978-3-7091-7193-6, 309 page(s) doi:10.1007/978-3-7091-0560-3.

17. P. Pichler:
"Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2004), ISBN: 978-3-7091-7204-9, 554 page(s) doi:10.1007/978-3-7091-0597-9.

16. C. Jungemann, B. Meinerzhagen:
"Hierarchical Device Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2003), ISBN: 978-3-7091-7226-1, 254 page(s) doi:10.1007/978-3-7091-6086-2.

15. R. Klima, S. Selberherr:
"Programmieren in C";
Springer-Verlag, Wien - New York, Wien, (2003), ISBN: 978-3-211-40514-7, 354 page(s) .

14. C. Wasshuber:
"Computational Single-Electronics";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2001), ISBN: 978-3-7091-7256-8, 278 page(s) doi:10.1007/978-3-7091-6257-6.

13. A. Nathan, H. Baltes:
"Microtransducer CAD";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1999), ISBN: 978-3-7091-7321-3, 427 page(s) doi:10.1007/978-3-7091-6428-0.

12. A. Schenk:
"Advanced Physical Models for Silicon Device Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1998), ISBN: 978-3-7091-7334-3, 349 page(s) doi:10.1007/978-3-7091-6494-5.

11. D. Schroeder:
"Modelling of Interface Carrier Transport for Device Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1994), ISBN: 978-3-7091-7368-8, 221 page(s) doi:10.1007/978-3-7091-6644-4.

10. N. Arora:
"MOSFET Models for VLSI Circuit Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1993), ISBN: 978-3-7091-9249-8, 605 page(s) doi:10.1007/978-3-7091-9247-4.

9. F. Fasching, S. Halama, S. Selberherr:
"Technology CAD Systems";
Springer-Verlag, Wien - New York, (1993), ISBN: 978-3-7091-9317-4, 309 page(s) doi:10.1007/978-3-7091-9315-0.

8. W. Joppich, S. Mijalkovic:
"Multigrid Methods for Process Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1993), ISBN: 978-3-7091-9255-9, 309 page(s) doi:10.1007/978-3-7091-9253-5.

7. S. Selberherr, H. Stippel, R. Strasser:
"Simulation of Semiconductor Devices and Processes, Vol.5";
Springer-Verlag, Wien - New York, (1993), ISBN: 978-3-7091-7372-5, 504 page(s) doi:10.1007/978-3-7091-6657-4.

6. W. Hänsch:
"The Drift Diffusion Equation and Its Applications in MOSFET Modeling";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1991), ISBN: 978-3-7091-9097-5, 271 page(s) doi:10.1007/978-3-7091-9095-1.

5. H.C. DeGraaff, F.M. Klassen:
"Compact Transistor Modeling for Circuit Design";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1990), ISBN: 978-3-7091-9045-6, 351 page(s) doi:10.1007/978-3-7091-9043-2.

4. C. Jacoboni, P. Lugli:
"The Monte Carlo Method for Semiconductor Device Simulation";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1989), ISBN: 978-3-7091-7453-1, 356 page(s) doi:10.1007/978-3-7091-6963-6.

3. P. Markowich:
"The Stationary Semiconductor Device Equations";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (1986), ISBN: 978-3-211-99937-0, 193 page(s) doi:10.1007/978-3-7091-3678-2.

2. S. Selberherr:
"Analysis and Simulation of Semiconductor Devices";
Springer-Verlag, Wien - New York, (1984), ISBN: 978-3-7091-8754-8, 294 page(s) doi:10.1007/978-3-7091-8752-4.

1. S. Selberherr:
"Two Dimensional Modeling of MOS Transistors";
Semiconductor Physics, Inc., Auszug aus der Dissertation in englischer Sprache, (1981), 146 page(s) .


Publications in Scientific Journals


339. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide";
IEEE Transactions on Electron Devices, 65, (2018), 674 - 679 doi:10.1109/TED.2017.2786086.

338. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics";
Physica Status Solidi - Rapid Research Letters, 11, (2017), 1700102-1 - 1700102-5 doi:10.1002/pssr.201700102.

337. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
Solid-State Electronics, 128, (invited) (2017), 141 - 147 doi:10.1016/j.sse.2016.10.029.

336. P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr:
"Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces";
Procedia Computer Science, 108, (2017), 245 - 254 doi:10.1016/j.procs.2017.05.067.

335. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation";
Journal of Physical Chemistry A, 121, (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983.

334. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032.

333. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spintronics as a Non-Volatile Complement to Modern Microelectronics";
Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47, (invited) (2017), 195 - 210.

332. L. Filipovic, S. Selberherr:
"Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
IEEE Transactions on Device and Materials Reliability, 16, (2016), 483 - 495 doi:10.1109/TDMR.2016.2625461.

331. L. Filipovic, S. Selberherr:
"Stress in Three-Dimensionally Integrated Sensor Systems";
Microelectronics Reliability, 61, (2016), 3 - 10 doi:10.1016/j.microrel.2015.09.013.

330. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34.

329. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"CMOS-Compatible Spintronic Devices: A Review";
Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006.

328. S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During Nanoindentation in Open TSVs";
IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727.

327. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
"ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419.

326. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688.

325. A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
"Investigation of Novel Silicon PV Cells of a Lateral Type";
Silicon, 7, (2015), 283 - 291 doi:10.1007/s12633-014-9227-x.

324. E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Lacerda de Orio, S. Selberherr:
"Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
Microelectronic Engineering, 137, (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014.

323. I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Boundary Conditions and the Wigner Equation Solution";
Journal of Computational Electronics, 14, (2015), 859 - 863 doi:10.1007/s10825-015-0720-2.

322. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov:
"Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition";
Journal of Computational Electronics, 14, (2015), 151 - 162 doi:10.1007/s10825-014-0635-3.

321. L. Filipovic, S. Selberherr:
"Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors";
Sensors, 15, (2015), 7206 - 7227 doi:10.3390/s150407206.

320. L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
Microelectronics Reliability, 55, (2015), 1843 - 1848 doi:10.1016/j.microrel.2015.06.014.

319. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072.

318. M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
"The Wigner Equation in the Presence of Electromagnetic Potentials";
Journal of Computational Electronics, 14, (2015), 888 - 893 doi:10.1007/s10825-015-0732-y.

317. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007.

316. F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr:
"Transformation Invariant Local Element Size Specification";
Applied Mathematics and Computation, 267, (2015), 195 - 206 doi:10.1016/j.amc.2015.04.027.

315. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"A Comparison of Approaches for the Solution of the Wigner Equation";
Mathematics and Computers in Simulation, 107, (2015), 108 - 119 doi:10.1016/j.matcom.2014.06.001.

314. V. Sverdlov, S. Selberherr:
"Silicon Spintronics: Progress and Challenges";
Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002.

313. J. Weinbub, M. Wastl, K. Rupp, F. Rudolf, S. Selberherr:
"ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering";
Applied Mathematics and Computation, 267, (2015), 282 - 293 doi:10.1016/j.amc.2015.03.094.

312. T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of Multipurpose Spintronic Devices";
International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215.

311. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023.

310. H. Ceric, R. Lacerda de Orio, W. H. Zisser, S. Selberherr:
"Microstructural Impact on Electromigration: A TCAD Study";
Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C.

309. L. Filipovic, S. Selberherr:
"The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
Microelectronics Reliability, 54, (2014), 1953 - 1958 doi:10.1016/j.microrel.2014.07.014.

308. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
"Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques";
Microelectronic Engineering, 117, (2014), 57 - 66 doi:10.1016/j.mee.2013.12.025.

307. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications";
IEEE Transactions on Semiconductor Manufacturing, 27, (2014), 269 - 277 doi:10.1109/TSM.2014.2298883.

306. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056.

305. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection in a Semiconductor Through a Space-Charge Layer";
Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035.

304. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89.

303. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141.

302. D. Osintsev, V. Sverdlov, S. Selberherr:
"Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29.

301. F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr:
"The Meshing Framework ViennaMesh for Finite Element Applications";
Journal of Computational and Applied Mathematics, 270, (2014), 166 - 177 doi:10.1016/j.cam.2014.02.005.

300. J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov:
"Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches";
Physica A: Statistical Mechanics and its Applications, 398, (2014), 194 - 198 doi:10.1016/j.physa.2013.12.045.

299. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"A Benchmark Study of the Wigner Monte Carlo Method";
Monte Carlo Methods and Applications, 20, (2014), 43 - 51 doi:10.1515/mcma-2013-0018.

298. J. Weinbub, K. Rupp, S. Selberherr:
"Highly Flexible and Reusable Finite Element Simulations with ViennaX";
Journal of Computational and Applied Mathematics, 270, (2014), 484 - 495 doi:10.1016/j.cam.2013.12.013.

297. J. Weinbub, K. Rupp, S. Selberherr:
"ViennaX: A Parallel Plugin Execution Framework for Scientific Computing";
Engineering with Computers, 30, (2014), 651 - 668 doi:10.1007/s00366-013-0314-1.

296. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Spin Transfer Oscillator";
Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936.

295. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099.

294. L. Filipovic, S. Selberherr:
"A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework";
Microelectronic Engineering, 107, (2013), 23 - 32 doi:10.1016/j.mee.2013.02.083.

293. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework";
Engineering Letters, 21, (invited) (2013), 224 - 240.

292. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y.

291. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017.

290. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683.

289. M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska:
"Wigner Quasi-Particle Attributes - An Asymptotic Perspective";
Applied Physics Letters, 102, (2013), 163113-1 - 163113-4 doi:10.1063/1.4802931.

288. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055.

287. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana, 42, (2013), 205 - 211.

286. P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr:
"Decoherence Effects in the Wigner Function Formalism";
Journal of Computational Electronics, 12, (2013), 388 - 396 doi:10.1007/s10825-013-0480-9.

285. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"Decoherence and Time Reversibility: The Role of Randomness at Interfaces";
Journal of Applied Physics, 114, (2013), 174902-1 - 174902-7 doi:10.1063/1.4828736.

284. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132.

283. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Multiple Purpose Spin Transfer Torque Operated Devices";
Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W.

282. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030.

281. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035.

280. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565.

279. A. Makarov, V. Sverdlov, S. Selberherr:
"Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020.

278. M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha:
"Physical Scales in the Wigner-Boltzmann Equation";
Annals of Physics, 328, (2012), 220 - 237 doi:10.1016/j.aop.2012.10.001.

277. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021.

276. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015.

275. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr:
"Physics-Based Modeling of GaN HEMTs";
IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118.

274. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 59, (2012), 433 - 440 doi:10.1109/TED.2011.2173690.

273. O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211.

272. H. Ceric, S. Selberherr:
"Electromigration in Submicron Interconnect Features of Integrated Circuits";
Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001.

271. J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Solid-State Electronics, 65-66, (2011), 81 - 87 doi:10.1016/j.sse.2011.06.041.

270. J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr:
"Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 2227 - 2234 doi:10.1109/TED.2011.2150226.

269. J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr:
"Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 2218 - 2226 doi:10.1109/TED.2011.2150225.

268. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376.

267. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503.

266. N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr:
"Performance Assessment of Nanoscale Field Effect Diodes";
IEEE Transactions on Electron Devices, 58, (2011), 2378 - 2384 doi:10.1109/TED.2011.2152844.

265. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049.

264. K. Rupp, S. Selberherr:
"The Economic Limit to Moore's Law";
IEEE Transactions on Semiconductor Manufacturing, 24, (2011), 1 - 4 doi:10.1109/TSM.2010.2089811.

263. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 58, (2011), 3725 - 3735 doi:10.1109/TED.2011.2163719.

262. O. Ertl, S. Selberherr:
"Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation";
Microelectronic Engineering, 87, (2010), 20 - 29 doi:10.1016/j.mee.2009.05.011.

261. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8.

260. N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model";
Journal of Electronic Materials, 39, (2010), 1902 - 1908 doi:10.1007/s11664-009-1035-5.

259. R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007.

258. K. Rupp, S. Selberherr:
"The Economic Limit to Moore´s Law";
Proceedings of the IEEE, 98, (2010), 351 - 353 doi:10.1109/JPROC.2010.2040205.

257. T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting";
Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008.

256. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893.

255. O. Ertl, S. Selberherr:
"A Fast Level Set Framework for Large Three-Dimensional Topography Simulations";
Computer Physics Communications, 180, (2009), 1242 - 1250 doi:10.1016/j.cpc.2009.02.002.

254. R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 505 - 520 doi:10.1080/17445760902758545.

253. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Journal Integrated Circuits and Systems, 4, (2009), 67 - 72.

252. C. Poschalko, S. Selberherr:
"Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads";
IEEE Transactions on Electromagnetic Compatibility, 51, (2009), 18 - 24 doi:10.1109/TEMC.2008.2008815.

251. P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 539 - 549 doi:10.1080/17445760902758552.

250. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling of Modern MOSFETs with Strain";
Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1.

249. V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
Journal Integrated Circuits and Systems, 4, (2009), 55 - 60.

248. J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1.

247. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9.

246. M. Pourfath, H. Kosina, S. Selberherr:
"Numerical Study of Quantum Transport in Carbon Nanotube Transistors";
Mathematics and Computers in Simulation, 79, (2008), 1051 - 1059 doi:10.1016/j.matcom.2007.09.004.

245. M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Journal of Physics: Conference Series, 109, (2008), 1 - 5 doi:10.1088/1742-6596/109/1/012029.

244. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019.

243. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7.

242. V. Sverdlov, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054.

241. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Current Transport Models for Nanoscale Semiconductor Devices";
Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001.

240. E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr:
"The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon";
Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004.

239. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533.

238. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102.

237. C. Heitzinger, Ch. Ringhofer, S. Selberherr:
"Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities";
Communications in Mathematical Sciences, 5, (2007), 779 - 788 doi:10.4310/CMS.2007.v5.n4.a2.

236. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
"Comparison of Deposition Models for a TEOS LPCVD Process";
Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058.

235. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
"A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7.

234. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP - A Gate Stack Analyzer";
Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059.

233. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat:
"High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs";
Microelectronic Engineering, 84, (2007), 2063 - 2066 doi:10.1016/j.mee.2007.04.085.

232. M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr:
"Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method";
IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240.

231. M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr:
"Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method";
IEEE Transactions on Microwave Theory and Techniques, 55, (2007), 1322 - 1331 doi:10.1109/TMTT.2007.897777.

230. M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Journal of Computational Electronics, 6, (2007), 321 - 324 doi:10.1007/s10825-006-0113-7.

229. M. Pourfath, H. Kosina, S. Selberherr:
"Geometry Optimization for Carbon Nanotube Transistors";
Solid-State Electronics, 51, (2007), 1565 - 1571 doi:10.1016/j.sse.2007.09.021.

228. M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling CNTFETs";
Journal of Computational Electronics, 6, (2007), 243 - 246 doi:10.1007/s10825-006-0099-1.

227. A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
"Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
Journal of Physics: Conference Series, 61, (2007), 1051 - 1055 doi:10.1088/1742-6596/61/1/208.

226. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations";
Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022.

225. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0.

224. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
"The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880.

223. R. Wittmann, S. Selberherr:
"A Study of Ion Implantation into Crystalline Germanium";
Solid-State Electronics, 51, (2007), 982 - 988 doi:10.1016/j.sse.2007.03.019.

222. J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
"Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514.

221. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639.

220. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
International Journal of High Speed Electronics and Systems, 16, (2006), 115 - 136 doi:10.1142/S0129156406003576.

219. M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Journal of Computational Electronics, 5, (2006), 155 - 159 doi:10.1007/s10825-006-8836-z.

218. M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Transistors";
Journal of Physics: Conference Series, 38, (2006), 29 - 32 doi:10.1088/1742-6596/38/1/008.

217. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6.

216. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field-Effect Transistors";
Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009.

215. W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2129 - 2139 doi:10.1109/TCAD.2005.862750.

214. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845.

213. T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
"Numerical Analysis of SiC Merged PiN Schottky Diodes";
Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949.

212. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788.

211. A. Gehring, S. Selberherr:
"Gate Current Modeling for MOSFETs";
Journal of Computational and Theoretical Nanoscience, 2, (invited) (2005), 26 - 44 doi:10.1166/jctn.2005.002.

210. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
"Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311.

209. C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
"A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24, (2005), 1485 - 1491 doi:10.1109/TCAD.2005.852297.

208. S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793.

207. M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park:
"Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors";
Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491.

206. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043.

205. M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z.

204. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013.

203. E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr:
"Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors";
IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402.

202. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"An Advanced Equation Assembly Module";
Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5.

201. T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042.

200. T. Binder, C. Heitzinger, S. Selberherr:
"A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23, (2004), 814 - 822 doi:10.1109/TCAD.2004.828130.

199. A. Gehring, S. Selberherr:
"Evolution of Current Transport Models for Engineering Applications";
Journal of Computational Electronics, 3, (2004), 149 - 155 doi:10.1007/s10825-004-7035-z.

198. A. Gehring, S. Selberherr:
"Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
IEEE Transactions on Device and Materials Reliability, 4, (2004), 306 - 319 doi:10.1109/TDMR.2004.836727.

197. A. Gehring, S. Selberherr:
"Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
Microelectronics Reliability, 44, (2004), 1879 - 1884 doi:10.1016/j.microrel.2004.07.101.

196. T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1.

195. C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation, 66, (2004), 219 - 230 doi:10.1016/j.matcom.2003.11.010.

194. C. Heitzinger, S. Selberherr:
"On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
Microelectronics Journal, 35, (2004), 167 - 171 doi:10.1016/j.mejo.2003.09.014.

193. C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process";
IEEE Transactions on Electron Devices, 51, (2004), 1129 - 1134 doi:10.1109/TED.2004.829868.

192. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011.

191. H. Kosina, M Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model";
Monte Carlo Methods and Applications, 10, (2004), 359 - 368 doi:10.1515/mcma.2004.10.3-4.359.

190. M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
Monte Carlo Methods and Applications, 10, (2004), 461 - 468 doi:10.1515/mcma.2004.10.3-4.461.

189. M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
"Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
Physical Review B, 70, (2004), 1 - 16 doi:10.1103/PhysRevB.70.115319.

188. M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology, 19, (2004), 226 - 228 doi:10.1088/0268-1242/19/4/076.

187. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034.

186. V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology, 4, (invited) (2004), 15 - 25.

185. V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability, 44, (invited) (2004), 889 - 897 doi:10.1016/j.microrel.2004.02.009.

184. V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224, (2004), 312 - 319 doi:10.1016/j.apsusc.2003.09.036.

183. J.M. Park, R. Klima, S. Selberherr:
"High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
Microelectronics Journal, 35, (2004), 299 - 304 doi:10.1016/S0026-2692(03)00192-7.

182. J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015.

181. Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
"Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
SIAM Journal on Applied Mathematics, 64, (2004), 1933 - 1953 doi:10.1137/S0036139903428914.

180. R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
"Analysis of Split-Drain MAGFETs";
IEEE Transactions on Electron Devices, 51, (2004), 2237 - 2245 doi:10.1109/TED.2004.839869.

179. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035.

178. T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4.

177. T. Binder, A. Hössinger, S. Selberherr:
"Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 1204 - 1214 doi:10.1109/TCAD.2003.816219.

176. H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426.

175. J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
"Three-Dimensional Device Optimization by Green's Functions";
European Physical Journal - Applied Physics, 21, (2003), 103 - 106 doi:10.1051/epjap:2002121.

174. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440.

173. A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability, 43, (2003), 1495 - 1500 doi:10.1016/S0026-2714(03)00265-8.

172. A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Journal of Computational Electronics, 2, (2003), 219 - 223 doi:10.1023/B:JCEL.0000011428.85286.7d.

171. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X.

170. T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150.

169. C. Harlander, R. Sabelka, S. Selberherr:
"Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method";
Microelectronics Journal, 34, (2003), 815 - 821 doi:10.1016/S0026-2692(03)00147-2.

168. C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 879 - 883 doi:10.1109/TCAD.2003.814259.

167. C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
"Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 285 - 292 doi:10.1109/TCAD.2002.807879.

166. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Journal of Computational Electronics, 2, (2003), 147 - 151 doi:10.1023/B:JCEL.0000011416.93047.69.

165. H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Mathematics and Computers in Simulation, 62, (2003), 367 - 375 doi:10.1016/S0378-4754(02)00245-8.

164. H. Kosina, M. Nedjalkov, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. I. Theory";
Journal of Applied Physics, 93, (2003), 3553 - 3563 doi:10.1063/1.1544654.

163. M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Mathematics and Computers in Simulation, 62, (2003), 453 - 461 doi:10.1016/S0378-4754(02)00246-X.

162. M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Microelectronics Journal, 34, (2003), 443 - 445 doi:10.1016/S0026-2692(03)00069-7.

161. M. Nedjalkov, H. Kosina, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
Journal of Applied Physics, 93, (2003), 3564 - 3571 doi:10.1063/1.1544655.

160. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1.

159. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics, 94, (2003), 5791 - 5799 doi:10.1063/1.1616982.

158. S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
IEICE Transactions on Electronics, E86-C, (2003), 350 - 356.

157. H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5.

156. A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X.

155. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617.

154. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273.

153. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257.

152. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik, 444, (invited) (2002), 28 - 41.

151. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik, 444, (invited) (2002), 18 - 27.

150. T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354.

149. T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162.

148. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645.

147. T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Physica B: Condensed Matter, 314, (2002), 301 - 304 doi:10.1016/S0921-4526(01)01417-X.

146. C. Heitzinger, S. Selberherr:
"An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
Microelectronics Journal, 33, (2002), 61 - 68 doi:10.1016/S0026-2692(01)00105-7.

145. H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031.

144. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002.

143. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Journal of Computational Electronics, 1, (2002), 27 - 31 doi:10.1023/A:1020799224110.

142. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Wigner Equation with Quantum Electron-Phonon Interaction";
Microelectronic Engineering, 63, (2002), 199 - 203 doi:10.1016/S0167-9317(02)00625-1.

141. K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Thin Films";
Radiation Effects and Defects in Solids, 156, (2001), 157 - 161 doi:10.1080/10420150108216888.

140. K. Dragosits, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
IEEE Transactions on Electron Devices, 48, (2001), 316 - 322 doi:10.1109/16.902733.

139. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757.

138. T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366.

137. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000.

136. T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661.

135. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6.

134. M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
VLSI Design, 13, (2001), 405 - 411 doi:10.1155/2001/54247.

133. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473.

132. V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits, 36, (invited) (2001), 1365 - 1370 doi:10.1109/4.944664.

131. V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
Radiation Effects and Defects in Solids, 156, (2001), 261 - 265 doi:10.1080/10420150108216903.

130. V. Palankovski, R. Schultheis, S. Selberherr:
"Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
IEEE Transactions on Electron Devices, 48, (2001), 1264 - 1269 doi:10.1109/16.925258.

129. V. Palankovski, S. Selberherr:
"Micro Materials Modeling in MINIMOS-NT";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7, (2001), 183 - 187 doi:10.1007/s005420000076.

128. R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices, 48, (2001), 210 - 217 doi:10.1109/16.902718.

127. R. Sabelka, S. Selberherr:
"A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures";
Microelectronics Journal, 32, (2001), 163 - 171 doi:10.1016/S0026-2692(00)00113-0.

126. H. Brech, T. Grave, S. Selberherr:
"Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
IEEE Transactions on Electron Devices, 47, (2000), 1957 - 1964 doi:10.1109/16.870581.

125. A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
IEICE Transactions on Electronics, E83-C, (2000), 1259 - 1266.

124. T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5.

123. A. Hössinger, E. Langer, S. Selberherr:
"Parallelization of a Monte Carlo Ion Implantation Simulator";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 560 - 567 doi:10.1109/43.845080.

122. M. Knaipp, W. Kanert, S. Selberherr:
"Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
Solid-State Electronics, 44, (2000), 1135 - 1143 doi:10.1016/S0038-1101(00)00046-0.

121. R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr:
"On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 1233 - 1240 doi:10.1109/43.892848.

120. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
Journal of Applied Physics, 87, (2000), 4308 - 4314 doi:10.1063/1.373070.

119. H. Kosina, M. Nedjalkov, S. Selberherr:
"Theory of the Monte Carlo Method for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 47, (2000), 1898 - 1908 doi:10.1109/16.870569.

118. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
IEICE Transactions on Electronics, E83-C, (2000), 1218 - 1223.

117. W. Pyka, H. Kirchauer, S. Selberherr:
"Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
Microelectronic Engineering, 53, (2000), 449 - 452 doi:10.1016/S0167-9317(00)00353-1.

116. W. Pyka, R. Martins, S. Selberherr:
"Optimized Algorithms for Three-Dimensional Cellular Topography Simulation";
IEEE Journal of Technology Computer Aided Design, 1, (2000), doi:10.1109/TCAD.1996.6449177.

115. R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing, 3, (2000), 149 - 155 doi:10.1016/S1369-8001(00)00015-9.

114. R. Strasser, S. Selberherr:
"Practical Inverse Modeling with SIESTA";
IEICE Transactions on Electronics, 83-C, (2000), 1303 - 1310.

113. K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Journal of the Korean Physical Society, 35, (1999), 104 - 106 doi:10.3938/jkps.35.104.

112. P. Fleischmann, W. Pyka, S. Selberherr:
"Mesh Generation for Application in Technology CAD";
IEICE Transactions on Electronics, E82-C, (invited) (1999), 937 - 947.

111. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43, (1999), 1791 - 1795 doi:10.1016/S0038-1101(99)00132-X.

110. V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B, 66, (1999), 46 - 49 doi:10.1016/S0921-5107(99)00118-X.

109. C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools";
IEEE Transactions on Semiconductor Manufacturing, 12, (1999), 76 - 86 doi:10.1109/66.744527.

108. W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
"Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18, (1999), 1741 - 1749 doi:10.1109/43.811323.

107. M. Radi, E. Leitner, S. Selberherr:
"AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
IEEE Journal of Technology Computer Aided Design, 1, (1999), doi:10.1109/TCAD.1996.6449174.

106. M. Stockinger, A. Wild, S. Selberherr:
"Drive Performance of an Asymmetric MOSFET Structure: The Peak Device";
Microelectronics Journal, 30, (1999), 229 - 233 doi:10.1016/S0026-2692(98)00111-6.

105. W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1236 - 1243 doi:10.1109/43.736563.

104. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics, 83, (1998), 3096 - 3101 doi:10.1063/1.367067.

103. E. Leitner, S. Selberherr:
"Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 561 - 572 doi:10.1109/43.709394.

102. R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
"High-Precision Interconnect Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1148 - 1159 doi:10.1109/43.736187.

101. R. Martins, S. Selberherr, F. Vaz:
"A CMOS IC for Portable EEG Acquisition Systems";
IEEE Transactions on Instrumentation and Measurement, 47, (1998), 1191 - 1196 doi:10.1109/19.746581.

100. H. Noll, S. Selberherr:
"Zur Entwicklung der Mikroelektronik";
Telematik, 4, (1998), 2 - 6.

99. R. Plasun, M. Stockinger, S. Selberherr:
"Integrated Optimization Capabilities in the VISTA Technology CAD Framework";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1244 - 1251 doi:10.1109/43.736564.

98. G. Schrom, De Vivek, S. Selberherr:
"VLSI Performance Metric Based on Minimum TCAD Simulations";
IEEE Journal of Technology Computer Aided Design, 1, (1998), doi:10.1109/TCAD.1996.6449169.

97. G. Schrom, A. Stach, S. Selberherr:
"An Interpolation Based MOSFET Model for Low-Voltage Applications";
Microelectronics Journal, 29, (1998), 529 - 534 doi:10.1016/S0026-2692(98)00002-0.

96. S. Selberherr:
"Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren";
Elektrotechnik und Informationstechnik (e&i), 115, (invited) (1998), 344 - 348 doi:10.1007/BF03159602.

95. C. Wasshuber, H. Kosina, S. Selberherr:
"A Comparative Study of Single-Electron Memories";
IEEE Transactions on Electron Devices, 45, (1998), 2365 - 2371 doi:10.1109/16.726659.

94. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
VLSI Design, 8, (1998), 219 - 223 doi:10.1155/1998/83017.

93. H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
IEEE Transactions on Electron Devices, 44, (1997), 1822 - 1828 doi:10.1109/16.641348.

92. P. Fleischmann, S. Selberherr:
"Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449165.

91. G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Materials Science Forum, 258-263, (1997), 939 - 944 doi:10.4028/www.scientific.net/MSF.258-263.939.

90. H. Kirchauer, S. Selberherr:
"Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 1431 - 1438 doi:10.1109/43.664225.

89. H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulation";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449163.

88. C. Köpf, H. Kosina, S. Selberherr:
"Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
Solid-State Electronics, 41, (1997), 1139 - 1152 doi:10.1016/S0038-1101(97)00051-8.

87. C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"High-Level TCAD Task Representation and Automation";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449162.

86. T. Simlinger, H. Brech, T. Grave, S. Selberherr:
"Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
IEEE Transactions on Electron Devices, 44, (1997), 700 - 707 doi:10.1109/16.568029.

85. C. Wasshuber, H. Kosina, S. Selberherr:
"A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449164.

84. C. Wasshuber, H. Kosina, S. Selberherr:
"SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 937 - 944 doi:10.1109/43.658562.

83. N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
"Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
Journal of Vacuum Science & Technology B, 14, (1996), 224 - 230 doi:10.1116/1.589033.

82. G. Schrom, C. Pichler, T. Simlinger, S. Selberherr:
"On the Lower Bounds of CMOS Supply Voltage";
Solid-State Electronics, 39, (1996), 425 - 430 doi:10.1016/0038-1101(95)00171-9.

81. K. Vinzenz, S. Selberherr:
"Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen";
Acta Chirurgica Austriaca, 28, (invited) (1996), 60 - 61.

80. W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Trajectory Split Method for Monte Carlo Simulation of Ion Implantation";
IEEE Transactions on Semiconductor Manufacturing, 8, (1995), 402 - 407 doi:10.1109/66.475181.

79. H. Brand, S. Selberherr:
"Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor";
IEEE Transactions on Electron Devices, 42, (1995), 2137 - 2146 doi:10.1109/16.477772.

78. S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
"The Viennese Integrated System for Technology CAD Applications";
Microelectronics Journal, 26, (1995), 137 - 158 doi:10.1016/0026-2692(95)98918-H.

77. S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr:
"VISTA - User Interface, Task Level, and Tool Integration";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1208 - 1222 doi:10.1109/43.466337.

76. N. Khalil, J. Faricelli, D. Bell, S. Selberherr:
"The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling";
IEEE Electron Device Letters, 16, (1995), 17 - 19 doi:10.1109/55.363213.

75. H. Kosina, E. Langer, S. Selberherr:
"Device Modelling for the 1990s";
Microelectronics Journal, 26, (invited) (1995), 217 - 233 doi:10.1016/0026-2692(95)98923-F.

74. M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
"The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI";
Technical Report of IEICE, 95, (1995), 63 - 68.

73. H. Puchner, S. Selberherr:
"An Advanced Model for Dopant Diffusion in Polysilicon";
IEEE Transactions on Electron Devices, 42, (1995), 1750 - 1755 doi:10.1109/16.464423.

72. H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr:
"Process Simulation for the 1990s";
Microelectronics Journal, 26, (invited) (1995), 203 - 215 doi:10.1016/0026-2692(95)98922-E.

71. E. Strasser, S. Selberherr:
"Algorithms and Models for Cellular Based Topography Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1104 - 1114 doi:10.1109/43.406712.

70. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii:
"A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon";
IEEE Transactions on Electron Devices, 41, (1994), 1646 - 1654 doi:10.1109/16.310119.

69. H. Brand, S. Selberherr:
"Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)";
IEICE Transactions on Electronics, E77-C, (1994), 179 - 186.

68. F. Fasching, W. Tuppa, S. Selberherr:
"VISTA - The Data Level";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 72 - 81 doi:10.1109/43.273748.

67. H. Kosina, S. Selberherr:
"A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 201 - 210 doi:10.1109/43.259943.

66. H. Stippel, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree";
IEICE Transactions on Electronics, E77-C, (1994), 118 - 123.

65. E. Strasser, G. Schrom, K. Wimmer, S. Selberherr:
"Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations";
IEICE Transactions on Electronics, E77-C, (1994), 92 - 97.

64. C. Fischer, G. Nanz, S. Selberherr:
"Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas";
Computer Methods in Applied Mechanics and Engineering, 110, (1993), 17 - 24 doi:10.1016/0045-7825(93)90016-Q.

63. S. Halama, S. Selberherr:
"Future Aspects of Process and Device Simulation";
Electron Technology, 26, (invited) (1993), 49 - 57.

62. S. Selberherr:
"Technology Computer-Aided Design";
South African Journal of Physics, 16, (invited) (1993), 1 - 5.

61. O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar:
"Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation";
SIAM Journal of Scientific and Statistical Computing, 13, (1992), 289 - 306 doi:10.1137/0913015.

60. G. Nanz, P. Dickinger, S. Selberherr:
"Calculation of Contact Currents in Device Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11, (1992), 128 - 136 doi:10.1109/43.108625.

59. J. Demel, S. Selberherr:
"Application of the Complete Tableau Approach in JANAP";
Electrosoft, 2, (1991), 243 - 260.

58. G. Nanz, W. Kausel, S. Selberherr:
"Self-Adaptive Space and Time Grids in Device Simulation";
International Journal for Numerical Methods in Engineering, 31, (1991), 1357 - 1374 doi:10.1002/nme.1620310709.

57. S. Selberherr:
"Device Modeling and Physics";
Physica Scripta, T35, (invited) (1991), 293 - 298 doi:10.1088/0031-8949/1991/T35/057.

56. S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar:
"On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers";
Computer Physics Communications, 67, (1991), 145 - 156 doi:10.1016/0010-4655(91)90227-C.

55. P. Habas, S. Selberherr:
"Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices";
Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20, (1990), 185 - 188.

54. P. Habas, S. Selberherr:
"On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling";
Solid-State Electronics, 33, (1990), 1539 - 1544 doi:10.1016/0038-1101(90)90134-Z.

53. W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl:
"BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts";
Microelectronics Journal, 21, (1990), 5 - 21 doi:10.1016/0026-2692(90)90014-T.

52. H. Kosina, S. Selberherr:
"Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors";
Japanese Journal of Applied Physics, 29, (1990), L2283 - L2285 doi:10.1143/JJAP.29.L2283.

51. S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
"The Evolution of the MINIMOS Mobility Model";
Archiv für Elektronik und Übertragungstechnik, 44, (1990), 161 - 172.

50. S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
"The Evolution of the MINIMOS Mobility Model";
Solid-State Electronics, 33, (1990), 1425 - 1436 doi:10.1016/0038-1101(90)90117-W.

49. S. Selberherr, E. Langer:
"Three Dimensional Process and Device Modeling";
Microelectronics Reliability, 30, (1990), 624 doi:10.1016/0026-2714(90)90512-L.

48. M. Thurner, P. Lindorfer, S. Selberherr:
"Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 1189 - 1197 doi:10.1109/43.62756.

47. M. Thurner, S. Selberherr:
"Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 856 - 867 doi:10.1109/43.57786.

46. G. Hobler, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8, (1989), 450 - 459 doi:10.1109/43.24873.

45. W. Kausel, H. Pötzl, G. Nanz, S. Selberherr:
"Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor";
Solid-State Electronics, 32, (1989), 685 - 709 doi:10.1016/0038-1101(89)90002-6.

44. J.O. Nylander, F. Masszi, S. Selberherr, S. Berg:
"Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity";
Solid-State Electronics, 32, (1989), 363 - 367 doi:10.1016/0038-1101(89)90125-1.

43. S. Selberherr:
"MOS Device Modeling at 77K";
IEEE Transactions on Electron Devices, 36, (1989), 1464 - 1474 doi:10.1109/16.30960.

42. S. Selberherr:
"Process Modeling";
Microelectronic Engineering, 9, (1989), 605 - 610 doi:10.1016/0167-9317(89)90129-9.

41. S. Selberherr, E. Langer:
"Three Dimensional Process and Device Modeling";
Microelectronics Journal, 20, (invited) (1989), 113 - 127 doi:10.1016/0026-2692(89)90126-2.

40. G. Hobler, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation Induced Point Defects";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7, (1988), 174 - 180 doi:10.1109/43.3147.

39. S. Selberherr:
"Computer für Wissenschaft und Forschung";
Österreichische Hochschulzeitung, 5, (invited) (1988), 9 - 10.

38. S. Selberherr:
"Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik";
Österreichische Hochschulzeitung, 7, (invited) (1988), 25.

37. M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl:
"A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon";
COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6, (1987), 37 - 44 doi:10.1108/eb010299.

36. W. Hänsch, S. Selberherr:
"MINIMOS 3: A MOSFET Simulator that Includes Energy Balance";
IEEE Transactions on Electron Devices, 34, (1987), 1074 - 1078 doi:10.1109/T-ED.1987.23047.

35. G. Hobler, E. Langer, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation with Spatial Moments";
Solid-State Electronics, 30, (1987), 445 - 455 doi:10.1016/0038-1101(87)90175-4.

34. A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
"Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain";
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33, (1986), 315 - 317 doi:10.1109/T-UFFC.1986.26834.

33. W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
IEEE Transactions on Electron Devices, 32, (1985), 156 - 167 doi:10.1109/T-ED.1985.21925.

32. W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
IEEE Journal of Solid-State Circuits, 20, (1985), 76 - 87 doi:10.1109/JSSC.1985.1052279.

31. P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC-Fabrication Steps";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4, (1985), 384 - 397 doi:10.1109/TCAD.1985.1270136.

30. P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC-Fabrication Steps";
IEEE Transactions on Electron Devices, 32, (1985), 1940 - 1953 doi:10.1109/T-ED.1985.22226.

29. P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
"Two-Dimensional Coupled Diffusion Modeling";
Physica B: Condensed Matter, 129, (1985), 187 - 191 doi:10.1016/0378-4363(85)90566-2.

28. S. Selberherr:
"Process and Device Modeling for VLSI";
Microelectronics Journal, 16, (1985), 56 - 57 doi:10.1016/S0026-2692(85)80172-5.

27. J. Demel, S. Selberherr:
"VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran";
Angewandte Informatik, 6, (1984), 244 - 247.

26. W. Jüngling, E. Guerrero, S. Selberherr:
"On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation";
COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3, (1984), 79 - 105.

25. P. Markowich, S. Selberherr:
"A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
Matematica Aplicada e Computacional, 3, (1984), 131 - 156.

24. A. Schütz, S. Selberherr, H. Pötzl:
"Modeling MOS-Transistors in the Avalanche Breakdown Regime";
Transactions on Computer Simulation, 1, (invited) (1984), 1 - 14.

23. A. Schütz, S. Selberherr, H. Pötzl:
"Temperature Distribution and Power Dissipation in MOSFETs";
Solid-State Electronics, 27, (1984), 394 - 395 doi:10.1016/0038-1101(84)90175-8.

22. S. Selberherr:
"Process and Device Modeling for VLSI";
Microelectronics Reliability, 24, (invited) (1984), 225 - 257 doi:10.1016/0026-2714(84)90450-5.

21. S. Selberherr, Ch. Ringhofer:
"Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3, (1984), 52 - 64 doi:10.1109/TCAD.1984.1270057.

20. A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich:
"Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 30, (1983), 1070 - 1082 doi:10.1109/T-ED.1983.21261.

19. E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
"Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
Sensors and Actuators, 4, (1983), 71 - 76 doi:10.1016/0250-6874(83)85010-0.

18. J. Machek, S. Selberherr:
"A Novel Finite Element Approach to Device Modelling";
IEEE Transactions on Electron Devices, 30, (1983), 1083 - 1092 doi:10.1109/T-ED.1983.21262.

17. P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr:
"An Asymptotic Analysis of Single-Junction Semiconductor Devices";
MRC Technical Summary Report, 2527, (1983), 1 - 62.

16. P. Markowich, Ch. Ringhofer, S. Selberherr:
"A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices";
MRC Technical Summary Report, 2482, (1983), 1 - 50.

15. P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini:
"A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations";
IEEE Transactions on Electron Devices, 30, (1983), 1165 - 1180 doi:10.1109/T-ED.1983.21273.

14. Ch. Ringhofer, S. Selberherr:
"Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
MRC Technical Summary Report, 2513, (1983), 1 - 49.

13. H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz:
"Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique";
Computers and the Humanities, 16, (1982), 69 - 84 doi:10.1007/BF02259737.

12. E. Langer, S. Selberherr, H. Mader:
"A Numerical Analysis of Bulk-Barrier Diodes";
Solid-State Electronics, 25, (1982), 317 - 324 doi:10.1016/0038-1101(82)90141-1.

11. E. Langer, S. Selberherr, H. Mader:
"Numerische Analyse der Bulk-Barrier Diode";
Archiv für Elektronik und Übertragungstechnik, 36, (1982), 86 - 91.

10. P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer:
"A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device";
MRC Technical Summary Report, 2388, (1982), 1 - 57.

9. A. Schütz, S. Selberherr, H. Pötzl:
"A Two-Dimensional Model of the Avalanche Effect in MOS Transistors";
Solid-State Electronics, 25, (1982), 177 - 183 doi:10.1016/0038-1101(82)90105-8.

8. A. Schütz, S. Selberherr, H. Pötzl:
"Analysis of Breakdown Phenomena in MOSFET's";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1, (1982), 77 - 85 doi:10.1109/TCAD.1982.1269997.

7. S. Selberherr, A. Schütz, H. Pötzl:
"Investigation of Parameter Sensitivity of Short Channel MOSFETs";
Solid-State Electronics, 25, (1982), 85 - 90 doi:10.1016/0038-1101(82)90035-1.

6. S. Selberherr, E. Guerrero:
"Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals";
Solid-State Electronics, 24, (1981), 591 - 593 doi:10.1016/0038-1101(81)90081-2.

5. S. Selberherr, A. Schütz, H. Pötzl:
"Two-Dimensional MOS Transistor Modelling";
European Electronics, 1, (invited) (1981), 20 - 30.

4. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
IEEE Transactions on Electron Devices, 27, (1980), 1540 - 1550 doi:10.1109/T-ED.1980.20068.

3. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
IEEE Journal of Solid-State Circuits, 15, (1980), 605 - 615 doi:10.1109/JSSC.1980.1051444.

2. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)";
Elektronikschau, 9, (1980), 18 - 23.

1. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)";
Elektronikschau, 10, (1980), 54 - 58.


Contributions to Books


93. I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Neumann Series Analysis of the Wigner Equation Solution";
in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 701 - 707 doi:10.1007/978-3-319-23413-7_97.

92. E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome:
"Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices";
in "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", 27, E. Gutierrez-Dominguez (ed); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, 17 - 185 doi:10.1049/PBCS027E_ch2.

91. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 120 - 123 doi:10.1109/ULIS.2016.7440067.

90. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films";
in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 695 - 700 doi:10.1007/978-3-319-23413-7_96.

89. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 226 - 229 doi:10.1109/ULIS.2016.7440094.

88. V. Sverdlov, D. Osintsev, S. Selberherr:
"Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
in "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, (invited) 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531-003.

87. V. Sverdlov, S. Selberherr:
"Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 202 - 205 doi:10.1109/ULIS.2016.7440088.

86. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
in "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6.

85. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
in "Lecture Notes in Computer Science", 8962, I. Dimov, S. Fidanova, I. Lirkov (ed); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, 27 - 33 doi:10.1007/978-3-319-15585-2_3.

84. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"The Influence of Electrostatic Lenses on Wave Packet Dynamics";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 277 - 284 doi:10.1007/978-3-319-26520-9_30.

83. L. Filipovic, S. Selberherr:
"Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 243 - 250 doi:10.1149/06605.0243ecst.

82. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst.

81. J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
"Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31.

80. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
in "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., (invited) 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001.

79. F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, A. Morhammer, S. Selberherr:
"Free Open Source Mesh Healing for TCAD Device Simulations";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 293 - 300 doi:10.1007/978-3-319-26520-9_32.

78. V. Sverdlov, S. Selberherr:
"Spin-Based CMOS-Compatible Devices";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, (invited) 2015, ISBN: 978-3-319-26519-3, 42 - 49 doi:10.1007/978-3-319-26520-9_4.

77. V. Sverdlov, S. Selberherr:
"Spin-Based Silicon and CMOS-Compatible Devices";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, (invited) 2015, ISBN: 978-1-62332-238-0, 223 - 231 doi:10.1149/06605.0223ecst.

76. J. Weinbub, P. Ellinghaus, S. Selberherr:
"Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 309 - 316 doi:10.1007/978-3-319-26520-9_34.

75. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
in "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5", F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst.

74. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Efficient Calculation of the Two-Dimensional Wigner Potential";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 3 doi:10.1109/IWCE.2014.6865812.

73. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Implications of the Coherence Length on the Discrete Wigner Potential";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 3 doi:10.1109/IWCE.2014.6865852.

72. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors";
in "Transactions on Engineering Technologies", G.-C. Yang, S.-L. Ao, L. Gelman (ed); Springer, 2014, ISBN: 978-94-017-8831-1, 295 - 310 doi:10.1007/978-94-017-8832-8.

71. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion and the Role of Screening Effects in Semiconductors";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865825.

70. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 58 - 61.

69. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing";
in "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", issued by CRC Press; T. Brozek (ed); CRC Press, 2014, ISBN: 978-1-4822-1490-1, 221 - 259.

68. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
in "Future Information Engineering", G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

67. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824.

66. D. Osintsev, V. Sverdlov, S. Selberherr:
"Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
in "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, Switzerland, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7.

65. P. Schwaha, M. Nedjalkov, S. Selberherr, J. M. Sellier, I. Dimov, R. Georgieva:
"Stochastic Alternative to Newton's Acceleration";
in "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2014, ISBN: 978-3-662-43879-4, 178 - 185 doi:10.1007/978-3-662-43880-0_19.

64. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Role of Annihilation in a Wigner Monte Carlo Approach";
in "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2014, ISBN: 978-3-662-43879-4, 186 - 193 doi:10.1007/978-3-662-43880-0_20.

63. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
in "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198.

62. V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33.

61. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862.

60. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory";
in "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2013, ISBN: 978-1118-44216-6, 93 - 101 doi:10.1002/9781118678107.ch6.

59. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
in "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", issued by The Electrochemical Society; Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed); ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208 doi:10.1149/05305.0203ecst.

58. J. Rodriguez, J. Weinbub, D. Pahr, K. Rupp, S. Selberherr:
"Distributed High-Performance Parallel Mesh Generation with ViennaMesh";
in "Lecture Notes in Computer Science", 7782, P. Manninen, P. Öster (ed); Springer, 2013, ISBN: 978-3-642-36802-8, 548 - 552 doi:10.1007/978-3-642-36803-5_44.

57. J. Weinbub, K. Rupp, S. Selberherr:
"A Flexible Dynamic Data Structure for Scientific Computing";
in "Lecture Notes in Electrical Engineering", 229, G.-C. Yang, S.-L. Ao, L. Gelman (ed); Springer, (invited) 2013, ISBN: 978-94-007-6189-6, 565 - 577 doi:10.1007/978-94-007-6190-2_43.

56. J. Weinbub, K. Rupp, S. Selberherr:
"A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing";
in "Lecture Notes in Computer Science", 7782, P. Manninen, P. Öster (ed); Springer, 2013, ISBN: 978-3-642-36802-8, 563 - 566 doi:10.1007/978-3-642-36803-5_47.

55. L. Filipovic, S. Selberherr:
"A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 447 - 454 doi:10.1007/978-3-642-29843-1_50.

54. L. Filipovic, S. Selberherr:
"A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator";
in "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 97 - 104 doi:10.1515/9783110293586.97.

53. V. Kysenko, K. Rupp, O. Marchenko, S. Selberherr, A. Anisimov:
"GPU-Accelerated Non-negative Matrix Factorization for Text Mining";
in "Lecture Notes in Computer Science, Vol. 7337", G. Bouma, A. Ittoo, E. Metais, H. Wortmann (ed); Springer, 2012, ISBN: 978-3-642-31177-2, 158 - 163 doi:10.1007/978-3-642-31178-9_15.

52. A. Makarov, V. Sverdlov, S. Selberherr:
"MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242842.

51. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
in "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4 doi:10.1109/ICCDCS.2012.6188899.

50. M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz:
"Role of the Physical Scales on the Transport Regime";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 3 doi:10.1109/IWCE.2012.6242848.

49. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242850.

48. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72.

47. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Monte Carlo Investigations of Electron Decoherence due to Phonons";
in "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 203 - 211.

46. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 3 doi:10.1109/IWCE.2012.6242860.

45. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Phonon-Induced Decoherence in Electron Evolution";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 472 - 479 doi:10.1007/978-3-642-29843-1_53.

44. J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
"Towards a Free Open Source Process and Device Simulation Framework";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242867.

43. J. Weinbub, K. Rupp, S. Selberherr:
"Towards Distributed Heterogenous High-Performance Computing with ViennaCL";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 359 - 367 doi:10.1007/978-3-642-29843-1_41.

42. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
in "Lecture Notes in Computer Science, Vol. 6046", I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer, 2011, ISBN: 978-3-642-18465-9, 87 - 94 doi:10.1007/978-3-642-18466-6_9.

41. M. Nedjalkov, S. Selberherr, I. Dimov:
"Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation";
in "Lecture Notes in Computer Science, Vol. 6046", I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer, 2011, ISBN: 978-3-642-18465-9, 95 - 102 doi:10.1007/978-3-642-18466-6_10.

40. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
in "ECS Transactions", 35, Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (ed); ECS, 2011, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806.

39. T. Windbacher, V. Sverdlov, S. Selberherr:
"Classical Device Modeling";
in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer, (invited) 2011, ISBN: 978-1-4419-8839-3, 1 - 96 doi:10.1007/978-1-4419-8840-9_1.

38. M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
"Particle Model of the Scattering-Induced Wigner Function Correction";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 411 - 418 doi:10.1007/978-3-642-12535-5_48.

37. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2010, ISBN: 978-0-470-55137-0, 281 - 291 doi:10.1002/9780470649343.ch24.

36. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 443 - 450 doi:10.1007/978-3-642-12535-5_52.

35. T. Windbacher, V. Sverdlov, S. Selberherr:
"Biotin-Streptavidin Sensitive BioFETs and Their Properties";
in "Biomedical Engineering Systems and Technologies", Springer, 2010, ISBN: 978-3-642-11720-6, 85 - 95 doi:10.1007/978-3-642-11721-3_6.

34. R. Heinzl, P. Schwaha, S. Selberherr:
"Modern Concepts for High-Perfomance Scientific Computing";
in "Software and Data Technologies", J. Filipe, B. Shishkov, M. Helfert, L. Maciaszek (ed); Springer, 2009, ISBN: 978-3-540-88654-9, 89 - 100.

33. R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr:
"A High Performance Generic Scientific Simulation Environment";
in "Lecture Notes in Computer Science, Vol. 4699", B. Kaagström, E. Elmroth, J. Dongarra, J. Wasniewski (ed); Springer, 2007, ISBN: 978-3-540-75754-2, 996 - 1005 doi:10.1007/978-3-540-75755-9_117.

32. M. Pourfath, H. Kosina, S. Selberherr:
"Carbon Nanotube Based Transistors: A Computational Study";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1041 - 1042 doi:10.1063/1.2730253.

31. K. Riedling, S. Selberherr:
"A Publication Database for Research Documentation and Performance Evaluation";
in "Innovations 2007", International Network for Engineering Education and Research (iNEER), Arlington, VA, USA, 2007, ISBN: 978-0-9741252-6-8, 365 - 380.

30. M. Spevak, R. Heinzl, P. Schwaha, S. Selberherr:
"A Computational Framework for Topological Operations";
in "Lecture Notes in Computer Science, Vol. 4699", B. Kaagström, E. Elmroth, J. Jackson, J. Wasniewski (ed); Springer, 2007, ISBN: 978-3-540-75754-2, 781 - 790 doi:10.1007/978-3-540-75755-9_95.

29. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
"Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425.

28. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1389 - 1390 doi:10.1063/1.2730422.

27. H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268.

26. A. Gehring, S. Selberherr:
"Tunneling Models for Semiconductor Device Simulation";
in "Handbook of Theoretical and Computational Nanotechnology", issued by Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, 469 - 543.

25. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
"Analysis of Hole Transport in Arbitrarily Strained Germanium";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 443 - 450 doi:10.1149/1.2355842.

24. M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
in "Physics and Technology of High-k Gate Dielectrics III, Vol. 1 No. 5", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (ed); ECS Transactions, 2006, ISBN: 1-56677-444-6, 693 - 703 doi:10.1149/1.2209316.

23. M. Karner, S. Holzer, W. Gös, M. Vasicek, M. Wagner, H. Kosina, S. Selberherr:
"Numerical Analysis of Gate Stacks";
in "Physics and Technology of High-k Gate Dielectrics 4, Vol. 3 No. 3", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (ed); ECS Transactions, 2006, ISBN: 1-56677-503-5, 299 - 308 doi:10.1149/1.2355721.

22. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronics Devices";
in "Frontiers in Electronics", H. Iwai, Y. Nishida, M. Shur, H. Wong (ed); World Scientific Publishing Co., 2006, ISBN: 978-981-256-884-7, 115 - 136 doi:10.1142/S0129156406003576.

21. V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
in "Lecture Notes in Computer Science, Vol. 3743", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2006, ISBN: 3-540-31994-8, 594 - 601 doi:10.1007/11666806_68.

20. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 45 - 54 doi:10.1149/1.2355793.

19. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
in "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", issued by The Electrochemical Society; J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (ed); ECS Transactions, (invited) 2006, ISBN: 1-56677-512-4, 207 - 216.

18. R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
"A Study of Boron Implantation into High Ge Content SiGe Alloys";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 667 - 676 doi:10.1149/1.2355862.

17. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
in "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, Vol. 1 No. 1", issued by H.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol; ECS Transactions, Pennington, 2005, ISBN: 1-56677-430-6, 103 - 113.

16. V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr:
"Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays";
in "Unsolved Problems of Noise and Fluctuations", issued by New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, 177 - 182.

15. R. Sabelka, C. Harlander, S. Selberherr:
"Interconnects and Propagation of High Frequency Signals";
in "Predictive Simulation of Semiconductor Processing", J. Dabrowski, E. Weber (ed); Springer, 2004, ISBN: 3-540-20481-4, 357 - 385.

14. R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
in "SiGe: Materials, Processing, and Devices", issued by The Electrochemical Society; ECS Transactions, 2004, ISBN: 1-56677-420-9, 181 - 192.

13. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

12. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in "Lecture Notes in Computer Science, Vol. 2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 170 - 177.

11. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
in "Lecture Notes in Computer Science, Vol. 2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 178 - 184.

10. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in "Lecture Notes in Computer Science, Vol.2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 185 - 193.

9. T. Grasser, S. Selberherr:
"Current Transport Models for Engineering Applications";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2002, ISBN: 0-471-21247-4, 87 - 98.

8. H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
in "Lecture Notes in Computer Science, Vol. 2179", S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2001, ISBN: 3-540-43043-1, 175 - 182.

7. E. Langer, S. Selberherr:
"Advanced Models, Applications, and Software Systems for High Performance Computing-Application in Microelectronics";
in "High Performance Scientific and Engineering Computing", H.J. Bungartz, F. Durst, C. Zenger (ed); Springer, (invited) 1999, ISBN: 3-540-65730-4, 291 - 308 doi:10.1007/978-3-642-60155-2_25.

6. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity and Beyond";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 1999, ISBN: 0-471-32183-4, 313 - 322.

5. E. Langer, S. Selberherr:
"Prozeßsimulation: Stand der Technik";
in "Festkörperprobleme 36", R. Helbig (ed); Vieweg, (invited) 1996, ISBN: 3-528-08043-4, 203 - 243.

4. S. Selberherr, C. Fischer, S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger:
"Device Structures and Device Simulation Techniques";
in "Low-Power HF Microelectronics", A.S. Machado (ed); The Institution of Electrical Engineers, (invited) 1996, ISBN: 0-85296-874-4, 57 - 83.

3. H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
"Simulation of ULSI Processes and Devices";
in "Computer Aided Innovation of New Materials", M. Doyama et al. (ed); North Holland Publishing Company, (invited) 1991, ISBN: 0-444-88864-0, 723 - 728.

2. S. Selberherr:
"On Modeling MOS-Devices";
in "Process and Device Modeling", W.L. Engl (ed); North Holland Publishing Company, (invited) 1986, ISBN: 0-444-87891-2, 265 - 299.

1. S. Selberherr, A. Schütz, H. Pötzl:
"Two-Dimensional MOS-Transistor Modeling";
in "Process and Device Simulation for MOS-VLSI Circuits", P. Antognetti, D. Antoniadis, R.W. Dutton, W.G. Oldham (ed); Martinus Nijhoff, (invited) 1983, ISBN: 90-247-2824-x, 490 - 581.


Talks and Poster Presentations (with Proceedings-Entry)


1100. M. Ballicchia, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Classical and Quantum Electron Evolution with a Repulsive Dopant";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 105 - 106.

1099. V. Sverdlov, S. Selberherr:
"A Single-Spin Switch";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 93 - 94.

1098. V. Sverdlov, J. Weinbub, S. Selberherr:
"Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 87 - 88.

1097. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics";
BIT's Annual World Congress of Nano Science & Technology, Fukuoka; (invited) 2017-10-24 - 2017-10-26; in "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), 343.

1096. V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr:
"Non-Volatility by Spin in Modern Nanoelectronics";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2017-10-09 - 2017-10-11; in "Proceedings of the 30th International Conference on Microelectronics (MIEL 2017)", (2017), ISBN: 978-1-5386-2562-0, 7 - 14.

1095. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spintronics as a Non-Volatile Complement to Nanoelectronics";
Talk: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia; (invited) 2017-10-04 - 2017-10-06; in "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9, 10 page(s) .

1094. L. Gnam, J. Weinbub, K. Rupp, F. Rudolf, S. Selberherr:
"Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation";
Talk: International Meshing Roundtable (IMR), Barcelona, Spanien; 2017-09-18 - 2017-09-21; in "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5 page(s) .

1093. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017), .

1092. L. Filipovic, R.L. de Orio, W. H. Zisser, S. Selberherr:
"Modeling Electromigration in Nanoscaled Copper Interconnects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 161 - 164 doi:10.23919/SISPAD.2017.8085289.

1091. P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr:
"Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 73 - 76 doi:10.23919/SISPAD.2017.8085267.

1090. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "2017 International Conference on Simulation of Semiconductor Processes and Devices", (2017), ISBN: 978-4-86348-612-6, 125 - 128 doi:10.23919/SISPAD.2017.8085280.

1089. V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr:
"MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications";
Talk: EMN Meeting on Memristive Switching & Network, Milan, Italy; (invited) 2017-08-14 - 2017-08-18; in "Proceedings of EMN Meeting on Memristive Switching & Network 2017", (2017), 33 - 34.

1088. G. Meller, S. Selberherr:
"Simulation of Injection Currents into Disordered Molecular Conductors";
Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 2017-07-19 - 2017-07-21; in "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017), .

1087. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment";
Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2017-07-08 - 2017-07-11; in "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9, 142 - 146.

1086. G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr:
"Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems";
Talk: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 2017-07-03 - 2017-07-06; in "Proceedings of the 2017 17th International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4, 1 - 8 doi:10.1109/ICCSA.2017.7999648.

1085. V. Sverdlov, J. Weinbub, S. Selberherr:
"Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach";
Talk: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 2017-06-26 - 2017-06-30; in "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0, 132 - 133.

1084. V. Sverdlov, J. Weinbub, S. Selberherr:
"Electron Spin at Work in Modern and Emerging Devices";
Talk: Energy-Materials-Nanotechnology Meeting (EMN) on Quantum, Wien, Austria; (invited) 2017-06-18 - 2017-06-22; in "Book of Abstracts of the 2017 EMN Meeting on Quantum", (2017), 31 - 33.

1083. P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
"Wigner Analysis of Surface Roughness in Quantum Wires";
Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 2017-06-05 in "Book of Abstracts of the 2nd International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 40 - 41.

1082. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Wigner Modelling of Surface Roughness in Quantum Wires";
Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 2017-06-05 - 2017-06-09; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 171 - 172.

1081. T. Sadi, E. Towie, M. Nedjalkov, A. Asenov, S. Selberherr:
"Monte Carlo Particles in Quantum Wires: Effects of the Confinement";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2017-06-05 - 2017-06-09; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), 89 - 90.

1080. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study";
Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 2017-06-05 - 2017-06-09; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 88 - 90.

1079. J. Weinbub, M. Nedjalkov, I. Dimov, S. Selberherr:
"Wigner-Signed Particles Study of Double Dopant Quantum Effects";
Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 2017-06-05 in "Book of Abstracts of the 2nd International Wigner Workshop (IW2)", (2017), ISBN: 978-3-200-05129-4, 50 - 51.

1078. L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr:
"Towards a Metric for an Automatic Hull Mesh Coarsening Strategy";
Talk: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 2017-06-01 - 2017-06-02; in "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2, 118 - 119.

1077. V. Sverdlov, S. Selberherr:
"Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 2017-05-28 - 2017-05-30; in "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869, 57.

1076. S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
"Exploiting Spin-Transfer Torque for Non-Volatile Computing";
Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 2017-03-16 - 2017-03-18; in "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), 130.

1075. V. Sverdlov, S. Selberherr:
"Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
Talk: APS March Meeting, New Orleans, USA; 2017-03-13 - 2017-03-17; in "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503, .

1074. V. Sverdlov, J. Weinbub, S. Selberherr:
"Modeling Spin-Dependent Phenomena for New Device Applications";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 45 - 46.

1073. P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
"Wigner Modelling of Quantum Wires";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 2.

1072. V. Sverdlov, J. Ghosh, S. Selberherr:
"Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 7.

1071. T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr:
"Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 43.

1070. M. Nedjalkov, J. Weinbub, S. Selberherr:
"Modeling Carrier Transport in Nanoscale Semiconductor Devices";
Talk: BIT's Annual World Congress of Nano Science & Technology, Singapore; (invited) 2016-10-26 - 2016-10-28; in "Abstracts of the BIT's 6th Annual World Congress of Nano Science & Technology-2016", (2016), 377.

1069. M. Nedjalkov, J. Weinbub, I. Dimov, S. Selberherr:
"Signed Particle Interpretation for Wigner-Quantum Electron Evolution";
National Congress of Physical Sciences, Sofia, Bulgaria; (invited) 2016-09-29 - 2016-10-02; in "Abstracts Third National Congress of Physical Sciences", (2016), 1.

1068. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-16; in "Proceedings of the ESSDERC 46th European Solid-State Device Research Conference", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648.

1067. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 265 - 268 doi:10.1109/SISPAD.2016.7605198.

1066. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 233 - 236 doi:10.1109/SISPAD.2016.7605190.

1065. V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210.

1064. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
Talk: SISPAD Workshop, Nürnberg, Germany; 2016-09-05 in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), .

1063. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
Talk: Spintronics IX, San Diego, CA, USA; (invited) 2016-08-28 - 2016-09-01; in "Proceedings of SPIE", (2016), Vol.9931, 12 page(s) doi:10.1117/12.2236151.

1062. A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 2016-07-04 - 2016-07-08; in "Proceedings of the ICEM 2016", (2016), 1 page(s) .

1061. L. Filipovic, S. Selberherr:
"Effects of the Deposition Process Variation on the Performance of Open TSVs";
Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 2188 - 2195 doi:10.1109/ECTC.2016.177.

1060. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 2016-05-25 - 2016-05-27; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) .

1059. L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Impact of Across-Wafer Variation on the Electrical Performance of TSVs";
Talk: International Interconnect Technology Conference (IITC), San Jose, CA, USA; 2016-05-23 - 2016-05-26; in "Proceedings of IEEE International Interconnect Technology Conference (IITC)", (2016), ISBN: 978-1-5090-0386-0, 130 - 132 doi:10.1109/IITC-AMC.2016.7507707.

1058. T. Windbacher, V. Sverdlov, S. Selberherr:
"Magnetic Nonvolatile Processing Environment";
Talk: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia; (invited) 2016-05-19 - 2016-05-20; in "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", (2016), 42 - 43.

1057. M. Nedjalkov, J. Weinbub, S. Selberherr:
"The Description of Carrier Transport for Quantum Systems";
Talk: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand; (invited) 2016-04-08 - 2016-04-11; in "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), 41 - 42.

1056. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Nanoelectronics with Spin";
Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 2016-04-04 - 2016-04-06; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20.

1055. A. Selinger, K. Rupp, S. Selberherr:
"Evaluation of Mobile ARM-Based SoCs for High Performance Computing";
Talk: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 2016-04-03 - 2016-04-06; in "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1, 21:1 - 21:7 doi:10.22360/SpringSim.2016.HPC.022.

1054. V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
"Silicon Spintronics";
Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 2016-03-21 - 2016-03-24; in "Book of Abstracts of the 2016 EMN Meeting on Magnetic Materials", (2016), 37 - 38.

1053. V. Sverdlov, S. Selberherr:
"Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures";
Talk: APS March Meeting, Baltimore, USA; 2016-03-14 - 2016-03-18; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), Vol.61/1, ISSN: 0003-0503, 1 page(s) .

1052. L. Filipovic, S. Selberherr:
"Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors";
Talk: World Congress of Smart Materials (WCSM), Singapore; (invited) 2016-03-04 - 2016-03-06; in "Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016", (2016), 517.

1051. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 68 - 69.

1050. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 128 - 129.

1049. V. Sverdlov, S. Selberherr:
"Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 116 - 117.

1048. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
IEEE Xplore, in "Proceedings of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479.

1047. J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
"Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
ACM, in "HPC '15 Proceedings of the Symposium on High Performance Computing", (2015), ISBN: 978-1-5108-0101-1, 217 - 224.

1046. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"ViennaWD - Applications";
Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 2015-11-29 in "Booklet of the 1st International Wigner Workshop (IW2)", (2015), 9.

1045. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"A Novel Method of SOT-MRAM Switching";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

1044. V. Sverdlov, S. Selberherr:
"Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

1043. J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

1042. J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"ViennaWD - Status and Outlook";
Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 2015-11-29 in "Booklet of the 1st International Wigner Workshop (IW2)", (2015), 8.

1041. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
Talk: Energy Materials Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 2015-11-16 - 2015-11-19; in "Book of Abstract of the Energy Materials Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16.

1040. L. Filipovic, S. Selberherr:
"Processing of Integrated Gas Sensor Devices";
Talk: IEEE International Conference on Electrical and Electronic Technology TENCON, Macau, China; (invited) 2015-11-01 - 2015-11-04; in "Proceedings of the IEEE Region 10 Annual Conference (TENCON)", (2015), ISBN: 978-1-4799-8639-2, 6 page(s) doi:10.1109/TENCON.2015.7372781.

1039. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 2015-10-12 - 2015-10-14; in "Technical Digest of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 105 - 106.

1038. F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
"Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality";
Talk: International Meshing Roundtable (IMR), Austin, Texas, USA; 2015-10-11 - 2015-10-14; in "Proceedings of the 24th International Meshing Roundtable (IMR24)", (2015), 5 page(s) .

1037. L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 71.

1036. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 140 - 141.

1035. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 2015-09-24 - 2015-09-26; in "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), 175.

1034. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
Talk: European Materials Research Society (EMRS), Warsaw, Poland; 2015-09-15 - 2015-09-18; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) .

1033. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 24 - 27 doi:10.1109/SISPAD.2015.7292249.

1032. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313.

1031. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357.

1030. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 93 - 94.

1029. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301955.

1028. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36.

1027. J. Ghosh, V. Sverdlov, S. Selberherr:
"Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301961.

1026. F. Roger, A. P. Singulani, S. Carniello, L. Filipovic, S. Selberherr:
"Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation";
Talk: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 2015-09-01 - 2015-09-04; in "Proceedings of the 6th International Workshop on CMOS Variability (VARI)", (2015), ISBN: 978-1-5090-0071-5, 39 - 44 doi:10.1109/VARI.2015.7456561.

1025. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"CMOS-Compatible Spintronic Devices";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 2015-09-01 - 2015-09-04; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103.

1024. J. Ghosh, V. Sverdlov, S. Selberherr:
"Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 130.

1023. V. Sverdlov, S. Selberherr:
"Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 114.

1022. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 2015-06-29 - 2015-07-02; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236.

1021. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics: Recent Advances and Challenges";
International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 2015-06-29 - 2015-06-30; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7.

1020. L. Filipovic, S. Selberherr:
"Stress in Three-Dimensionally Integrated Sensor Systems";
Talk: International Conference on Materials for Advanced Technologies(ICMAT), Singapore; (invited) 2015-06-28 - 2015-07-03; in "Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT)", (2015), 342.

1019. V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
"Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63.

1018. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62.

1017. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"The Influence of Electrostatic Lenses on Wave Packet Dynamics";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 39 - 40.

1016. M. Nedjalkov, P. Ellinghaus, S. Selberherr:
"The Aharanov-Bohm Effect from a Phase Space Perspective";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 59 - 60.

1015. D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin Lifetime in MOSFETs: A High Performance Computing Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61.

1014. F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, S. Selberherr:
"Mesh Healing for TCAD Simulations";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 66.

1013. V. Sverdlov, S. Selberherr:
"Spin-Based CMOS-Compatible Devices";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69.

1012. J. Weinbub, P. Ellinghaus, S. Selberherr:
"Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 73.

1011. L. Filipovic, S. Selberherr:
"Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1010. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1009. V. Sverdlov, S. Selberherr:
"Spin-Based Silicon and CMOS-Compatible Devices";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1008. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

1007. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 2015-05-20 - 2015-05-22; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58.

1006. H. Ceric, S. Selberherr:
"Compact Model for Solder Bump Electromigration Failure";
Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 2015-05-18 - 2015-05-21; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5, 159 - 161 doi:10.1109/IITC-MAM.2015.7325651.

1005. L. Filipovic, S. Selberherr:
"Kinetics of Droplet Motion During Spray Pyrolysis";
Talk: Energy Materials Nanotechnology (EMN East Meeting), Phuket, Thailand; (invited) 2015-05-08 - 2015-05-11; in "EMN Meeting on Droplets 2015 Program and Abstract Book", (2015), 127 - 128.

1004. V. Sverdlov, S. Selberherr:
"Spin-Based Devices for Future Microelectronics";
Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 2015-05-04 - 2015-05-06; in "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 page(s) doi:10.1109/ISNE.2015.7132030.

1003. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 2015-04-13 - 2015-04-16; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45.

1002. J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
"Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
Talk: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 2015-04-12 - 2015-04-15; in "Program Book of the 2015 Spring Simulation Multiconference (SpringSim´15)", (2015), ISBN: 1-56555-355-1, 74.

1001. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon and CMOS-Compatible Spintronics";
Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 2015-03-15 - 2015-03-17; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), Vol.28, ISBN: 978-1-61804-286-6, 17 - 20.

1000. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

999. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 2015-02-24 - 2015-02-27; in "Proceedings of 21st Iberchip Worshop", (2015), Vol.23, .

998. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829.

997. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

996. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"New Design of Spin-Torque Nano-Oscillators";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63.

995. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62.

994. L. Filipovic, S. Selberherr:
"About Processes and Performance of Integrated Gas Sensor Components";
Talk: Energy Materials Nanotechnology (EMN East Meeting), Orlando, USA; (invited) 2014-11-22 - 2014-11-25; in "Abstracts Intl.Conf.on Energy - Materials - Nanotechnology (EMN)", (2014), 96 - 97.

993. L. Filipovic, S. Selberherr:
"Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China; (invited) 2014-10-28 - 2014-10-31; in "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), ISBN: 978-1-4799-3282-5, 1692 - 1695 doi:10.1109/ICSICT.2014.7021507.

992. H. Ceric, W. H. Zisser, S. Selberherr:
"Quantum Mechanical Calculations of Electromigration Characteristics";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 16.

991. L. Filipovic, S. Selberherr:
"Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 41.

990. S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During the Nanoindentation in Open TSVs";
Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 44.

989. W. H. Zisser, H. Ceric, S. Selberherr:
"Void Evolution in Open TSVs";
Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 58.

988. R. Lacerda de Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
"On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2014-10-12 - 2014-10-16; in "Final Report International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523.

987. L. Filipovic, S. Selberherr:
"The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 36.

986. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48.

985. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 2014-09-23 - 2014-09-25; in "Abstracts 2014", (2014), 78.

984. M. Schrems, J. Siegert, P. Dorfi, J. Kraft, E. Stueckler, F. Schrank, S. Selberherr:
"Manufacturing of 3D Integrated Sensors and Circuits";
Talk: European Solid-State Device Research Conference (ESSDERC), Venice, Italy; (invited) 2014-09-22 - 2014-09-26; in "Proceedings of the 44th European Solid-State Device Research Conference", (2014), ISBN: 978-1-4799-4377-7, 162 - 165 doi:10.1109/ESSDERC.2014.6948785.

983. V. Sverdlov, D. Osintsev, S. Selberherr:
"Spin behaviour in strained silicon films";
Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 2014-09-15 - 2014-09-18; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) .

982. H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr:
"Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603.

981. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 113 - 116 doi:10.1109/SISPAD.2014.6931576.

980. L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr:
"Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 341 - 344 doi:10.1109/SISPAD.2014.6931633.

979. D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
"Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596.

978. F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
"Template-Based Mesh Generation for Semiconductor Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 217 - 220 doi:10.1109/SISPAD.2014.6931602.

977. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 297 - 300 doi:10.1109/SISPAD.2014.6931622.

976. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Induced Resistance Increase in Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610.

975. S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Analysis in Open TSVs after Nanoindentation";
Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 39 - 40.

974. W. H. Zisser, H. Ceric, S. Selberherr:
"Stress Development and Void Evolution in Open TSVs";
Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 38 - 39.

973. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 2014-08-20 - 2014-08-24; in "Eighth International Conference on Numerical Methods and Applications", (2014), 19.

972. D. Osintsev, V. Sverdlov, S. Selberherr:
"Valley degeneracy and spin lifetime enhancement in stressed silicon films";
Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 2014-07-28 - 2014-07-31; in "Book of Abstracts", (2014), 1.

971. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion in Silicon from a Ferromagnetic Contact";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 165.

970. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166.

969. V. Sverdlov, A. Makarov, S. Selberherr:
"Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 2014-07-06 - 2014-07-08; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19.

968. H. Ceric, S. Selberherr:
"Electromigration Reliability of Solder Bumps";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 336 - 339 doi:10.1109/IPFA.2014.6898145.

967. L. Filipovic, R. Orio, S. Selberherr:
"Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 321 - 326 doi:10.1109/IPFA.2014.6898137.

966. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179.

965. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26.

964. V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17.

963. F. Rudolf, Y. Wimmer, J. Weinbub, K. Rupp, S. Selberherr:
"Mesh Generation Using Dynamic Sizing Functions";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2014-06-15 - 2014-06-20; in "Proc. 4th European Seminar on Computing", (2014), 191.

962. I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Neumann Series Analysis of the Wigner Equation Solution";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 459.

961. V. Sverdlov, D. Osintsev, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456.

960. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Efficient Calculation of the Two-Dimensional Wigner Potential";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 19 - 20.

959. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Implications of the Coherence Length on the Discrete Wigner Potential";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 155 - 156.

958. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Injection in Silicon: The Role of Screening Effects";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 63 - 64.

957. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60.

956. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Multi-Dimensional Transient Challenge: The Wigner Particle Approach";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; (invited) 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 119 - 120.

955. T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194.

954. L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
"Effects of Sidewall Scallops on Open Tungsten TSVs";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 3E.3.1 - 3E.3.6 doi:10.1109/IRPS.2014.6860633.

953. H. Ceric, S. Selberherr:
"Electromigration Induced Failure of Solder Bumps and the Role of IMC";
Poster: International Interconnect Technology Conference (IITC), San Jose, USA; 2014-05-20 - 2014-05-23; in "Proc. Intl. Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1, 265 - 267 doi:10.1109/IITC.2014.6831891.

952. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 2014-05-12 - 2014-05-14; in "Proceedings of the 29th International Conference on Microelectronics", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081.

951. L. Filipovic, R. Orio, S. Selberherr:
"Process and Reliability of SF6/O2 Plasma Etched Copper TSVs";
Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 2014-04-07 - 2014-04-09; in "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1, 4 page(s) doi:10.1109/EuroSimE.2014.6813768.

950. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"High Performance MRAM-Based Stateful Logic";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 117 - 120 doi:10.1109/ULIS.2014.6813912.

949. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling of Spin-Based Silicon Technology";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891.

948. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 9 - 12 doi:10.1109/ULIS.2014.6813893.

947. A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 1 page(s) .

946. D. Osintsev, V. Sverdlov, S. Selberherr:
"Mobility and spin lifetime enhancement in thin silicon films by shear strain";
Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), Vol.59/1, 1 page(s) .

945. E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 2014-03-02 - 2014-03-05; in "Book of Abstracts", (2014), 2 page(s) .

944. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 - 2014-02-28; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89.

943. H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
"3D Technology Interconnect Reliability TCAD";
Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 2014-02-11 - 2014-02-13; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8.

942. L. Filipovic, R. Orio, S. Selberherr:
"Process and performance of Copper TSVs";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

941. D. Osintsev, V. Sverdlov, S. Selberherr:
"Increasing mobility and spin lifetime with shear strain in thin silicon films";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

940. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
8813, SPIE Digital Library, in "Proceedings of SPIE", (2013), ISBN: 978-0-8194-9728-4, 88132Q1 - 88132Q9 doi:10.1117/12.2025568.

939. A. Makarov, V. Sverdlov, S. Selberherr:
"Fast Switching STT-MRAM Cells for Future Universal Memory";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 2013-12-17 - 2013-12-20; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) .

938. J. Ghosh, V. Sverdlov, S. Selberherr:
"Influence of a Space Charge Region on Spin Transport in Semiconductor";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 2013-12-11 - 2013-12-13; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3, 27.

937. A. Makarov, V. Sverdlov, S. Selberherr:
"Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

936. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement in Strained Thin Silicon Films";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

935. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714.

934. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457.

933. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 2013-11-01 - 2013-11-02; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7.

932. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185.

931. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Induced Stress in Open TSVs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179.

930. A. Makarov, V. Sverdlov, S. Selberherr:
"Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797.

929. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 - 2013-09-20; in "Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886.

928. S. Amoroso, L. Gerrer, A. Asenov, J. M. Sellier, I. Dimov, M. Nedjalkov, S. Selberherr:
"Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 25 - 28 doi:10.1109/SISPAD.2013.6650565.

927. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577.

926. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling the Growth of Thin SnO2 Films using Spray Pyrolysis Deposition";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 208 - 211 doi:10.1109/SISPAD.2013.6650611.

925. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 163 - 166 doi:10.1109/SISPAD.2013.6650600.

924. R. Orio, H. Ceric, S. Selberherr:
"Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617.

923. D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618.

922. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"Two-dimensional Transient Wigner Particle Model";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 404 - 407 doi:10.1109/SISPAD.2013.6650660.

921. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Estimation in Open Tungsten TSV";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 65 - 68 doi:10.1109/SISPAD.2013.6650575.

920. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 368 - 371 doi:10.1109/SISPAD.2013.6650651.

919. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Analyses of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620.

918. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration";
Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208.

917. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69.

916. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101.

915. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: Conf. on Spintronics (SPINTRONICS), San Diego, USA; (invited) 2013-08-25 - 2013-08-29; in "Proceedings of SPIE", (2013), Vol.8813, ISBN: 978-0-8194-9728-4, 88132Q1-2Q9 doi:10.1117/12.2025568.

914. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Non-Volatile Magnetic Flip Flop";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 2013-07-29 - 2013-08-02; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 page(s) .

913. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications";
Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 2013-07-17 - 2013-07-19; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5, 1 page(s) .

912. H. Ceric, R. Orio, S. Selberherr:
"Analysis of Solder Bump Electromigration Reliability";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258.

911. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications";
Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8, 2 page(s) doi:10.1109/NanoArch.2013.6623033.

910. A. Makarov, V. Sverdlov, S. Selberherr:
"Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165.

909. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272.

908. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel MTJ-Based Shift Register for Non-Volatile Logic Applications";
Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 36 - 37 doi:10.1109/NanoArch.2013.6623038.

907. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
"Modeling Spray Pyrolysis Deposition";
Talk: World Congress on Engineering (WCE), London, UK; 2013-07-03 - 2013-07-05; in "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), ISBN: 978-988-19252-8-2, 987 - 992.

906. R. Orio, S. Selberherr:
"About Voids in Copper Interconnects";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Singapore; (invited) 2013-06-30 - 2013-07-05; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), 8.

905. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Design and Applications of Magnetic Tunnel Junction Based Logic Circuits";
Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 2013-06-24 - 2013-06-27; in "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4, 157 - 160 doi:10.1109/PRIME.2013.6603122.

904. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339.

903. D. Osintsev, V. Sverdlov, S. Selberherr:
"Calculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70.

902. Ph. Tillet, K. Rupp, S. Selberherr, C. Lin:
"Towards Performance-Portable, Scalable, and Convenient Linear Algebra";
Talk: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 2013-06-24 - 2013-06-25; in "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), 1 - 8.

901. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates";
Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 244 - 245.

900. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75.

899. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77.

898. P. Schwaha, J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Ultimate Equivalence Between Coherent Quantum and Classical Regimes";
Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 152 - 153.

897. V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Devices in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71.

896. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239.

895. R. Orio, S. Selberherr:
"Physically Based Models of Electromigration";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2013-06-03 - 2013-06-05; in "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", (2013), Vol.290, 1 - 2.

894. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov, R. Georgieva:
"Stochastic Alternative to Newton's Acceleration";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2013-06-03 - 2013-06-07; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 77 - 78.

893. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Role of Annihilation in a Wigner Monte Carlo Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2013-06-03 - 2013-06-07; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 78.

892. M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
"Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures";
Talk: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 2013-06-02 - 2013-06-05; in "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3, 48 - 51.

891. M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
"Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 2013-05-26 - 2013-05-29; in "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0, 135 - 136.

890. F. Rudolf, K. Rupp, S. Selberherr:
"ViennaMesh - a Highly Flexible Meshing Framework";
Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 2013-05-20 - 2013-05-25; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 page(s) .

889. J. Weinbub, K. Rupp, S. Selberherr:
"Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX";
Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 2013-05-20 - 2013-05-25; in "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 page(s) .

888. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in "223th ECS Meeting", (2013), Vol.894, ISBN: 978-1-56677-866-4, 1.

887. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates";
Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 68 - 69.

886. D. Osintsev, V. Sverdlov, S. Selberherr:
"Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65.

885. V. Sverdlov, S. Selberherr:
"Silicon Spintronics and its Applications";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; (invited) 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 51 - 52.

884. M. Schrems, C. Schrank, J. Siegert, J. Kraft, J. Teva, S. Selberherr:
"Metrology Requirements for Manufacturing 3D Integrated ICs";
Talk: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA; (invited) 2013-03-25 - 2013-03-28; in "Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), 137 - 139.

883. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of the valley degeneracy on spin relaxation in thin silicon films";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525.

882. D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhanced intervalley splitting and reduced spin relaxation in strained thin silicon films";
Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) .

881. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), Vol.46, 1 page(s) .

880. A. P. Singulani, H. Ceric, S. Selberherr:
"Thermo-mechanical Simulations of an Open Tungsten TSV";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-12-05 - 2012-12-07; in "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4, 110 - 114 doi:10.1109/EPTC.2012.6507061.

879. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21.

878. D. Osintsev, V. Sverdlov, S. Selberherr:
"Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 33.

877. M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
"Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs";
Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 2012-11-11 - 2012-11-15; in "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3, 55 - 58 doi:10.1109/ASDAM.2012.6418556.

876. R. Orio, S. Selberherr:
"Formation and Movement of Voids in Copper Interconnect Structures";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 2012-10-29 - 2012-11-01; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5, 378 - 381 doi:10.1109/ICSICT.2012.6467675.

875. V. Sverdlov, A. Makarov, S. Selberherr:
"Fast Switching in MTJs with a Composite Free Layer";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291.

874. T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Fully Electrically Read- Write Magneto Logic Gates";
Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in "Book of Abstracts", (2012), 1 page(s) .

873. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986.

872. A. Makarov, V. Sverdlov, S. Selberherr:
"High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer";
Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 2012-09-25 - 2012-09-27; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) .

871. D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spintronic Effects in Silicon";
Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 2012-09-24 - 2012-09-28; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) .

870. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 - 2012-09-21; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162.

869. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 2012-09-17 - 2012-09-21; in "Proceedings of the 42th European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2, 254 - 257 doi:10.1109/ESSDERC.2012.6343381.

868. H. Ceric, R. Orio, S. Selberherr:
"TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267.

867. G. Donnarumma, V. Palankovski, S. Selberherr:
"Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 125 - 128.

866. L. Filipovic, S. Selberherr:
"Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 189 - 192.

865. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 225 - 228.

864. A. Makarov, V. Sverdlov, S. Selberherr:
"Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232.

863. R. Orio, H. Ceric, S. Selberherr:
"Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271.

862. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156.

861. J. Weinbub, K. Rupp, S. Selberherr:
"A Flexible Execution Framework for High-Performance TCAD Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 400 - 403.

860. L. Filipovic, S. Selberherr:
"Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in "ECS Transactions", (2012), Vol.1, ISBN: 978-1-56677-990-6, 265 - 272 doi:10.1149/04901.0265ecst.

859. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in "ECS Transactions", (2012), Vol.1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst.

858. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-6.

857. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-27.

856. D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
"Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), Vol.1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413.

855. A. Makarov, V. Sverdlov, S. Selberherr:
"STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4.

854. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3.

853. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3.

852. V. Sverdlov, S. Selberherr:
"MOSFET and Spin Transistor Simulations";
Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; in "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 page(s) .

851. J. Weinbub, K. Rupp, S. Selberherr:
"A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing";
Talk: World Congress on Engineering (WCE), London, UK; 2012-07-04 - 2012-07-06; in "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3, 1076 - 1081.

850. H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Ab Initio Method for Electromigration Analysis";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306.

849. L. Filipovic, S. Selberherr:
"Simulation of Silicon Nanopatterning Using nc-AFM";
Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 2012-07-01 - 2012-07-05; in "Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM)", (2012), 108.

848. A. Makarov, V. Sverdlov, S. Selberherr:
"Reduction of the Switching Current in Spin Transfer Torque Random Access Memory";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 2012-06-25 - 2012-06-29; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49.

847. M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
"Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs";
Talk: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 2012-06-20 - 2012-06-22; in "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), 190 - 194.

846. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Memristive Charge- and Flux-Based Sensors";
Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 2012-06-12 - 2012-06-15; in "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9, 4 page(s) .

845. H. Ceric, R. Orio, S. Selberherr:
"Atomistic Method for Analysis of Electromigration";
Poster: IEEE International Interconnect Technology Conference, San Jose, USA; 2012-06-04 - 2012-06-06; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) .

844. H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr:
"Modeling of Microstructural Effects on Electromigration Failure";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 2012-05-28 - 2012-05-30; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51.

843. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"State Drift Optimization of Memristive Stateful IMP Logic Gates";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 243 - 244.

842. A. Makarov, V. Sverdlov, S. Selberherr:
"Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226.

841. M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz:
"Role of the Physical Scales on the Transport Regime";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 47 - 48.

840. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230.

839. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 177 - 178.

838. J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
"Towards a Free Open Source Process and Device Simulation Framework";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 141 - 142.

837. A. Makarov, V. Sverdlov, S. Selberherr:
"Recent Developments in Advanced Memory Modeling";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings of the 28th International Conference on Microelectronics", (2012), ISBN: 978-1-4673-0235-7, 49 - 52.

836. J. Weinbub, K. Rupp, S. Selberherr:
"Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development";
Talk: C++Now, Aspen, CO, USA; 2012-05-13 - 2012-05-18; in "Proceedings of C++Now (2012)", (2012), 10 page(s) .

835. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements";
Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 2012-04-29 - 2012-05-04; in "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 page(s) .

834. A. Makarov, S. Selberherr, V. Sverdlov:
"Emerging Non-Volatile Memories for Ultra-Low Power Applications";
Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 2012-04-23 - 2012-04-24; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24.

833. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling Emerging Non-Volatile Memories: Current Trends and Challenges";
Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 2012-04-01 - 2012-04-02; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056.

832. M. Lukash, K. Rupp, S. Selberherr:
"Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs";
Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 2012-03-26 - 2012-03-29; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) .

831. Ph. Tillet, K. Rupp, S. Selberherr:
"An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations";
Talk: High Performance Computing Symposium (HPC), Orlando, FL, USA; 2012-03-26 - 2012-03-29; in "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1, 7 page(s) .

830. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 2012-03-14 - 2012-03-17; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887.

829. V. Sverdlov, A. Makarov, S. Selberherr:
"Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer";
Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) .

828. M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry:
"Phonon Decoherence in Wigner-Boltzmann Transport";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2012-02-12 - 2012-02-17; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), 61 - 62.

827. D. Osintsev, V. Sverdlov, S. Selberherr:
"Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78.

826. S. Selberherr:
"Giving Silicon a Spin";
Talk: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia; (invited) 2012-01-05 - 2012-01-07; in "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 page(s) .

825. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

824. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

823. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

822. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

821. D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
"An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

820. A. Makarov, S. Selberherr, V. Sverdlov:
"Modeling of Advanced Memories";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568.

819. R. Orio, S. Selberherr:
"Compact Modeling of Interconnect Reliability";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117564.

818. A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
"Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181.

817. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) .

816. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444.

815. H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr:
"Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068.

814. L. Filipovic, S. Selberherr:
"A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 307 - 310 doi:10.1109/SISPAD.2011.6035031.

813. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Lifetime Estimation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040.

812. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049.

811. J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
"High-Quality Mesh Generation Based on Orthogonal Software Modules";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 139 - 142 doi:10.1109/SISPAD.2011.6035078.

810. R. Orio, H. Ceric, S. Selberherr:
"Modeling Electromigration Lifetimes of Copper Interconnects";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190.

809. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189.

808. L. Filipovic, S. Selberherr:
"A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator";
Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 2011-08-29 - 2011-09-02; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 30.

807. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Monte Carlo Investigations of Electron Decoherence due to Phonons";
Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 2011-08-29 - 2011-09-02; in "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 48.

806. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238.

805. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229.

804. J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
"A Generic High-Quality Meshing Framework";
Talk: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 2011-07-25 - 2011-07-28; in "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011), 1 page(s) .

803. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

802. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

801. H. Ceric, R. Orio, S. Selberherr:
"Integration of Atomistic and Continuum-Level Electromigration Models";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749.

800. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 2011-06-26 - 2011-07-01; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33.

799. L. Filipovic, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 42 - 43.

798. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64.

797. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Phonon-Induced Decoherence in Electron Evolution";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 74 - 75.

796. J. Weinbub, K. Rupp, S. Selberherr:
"Distributed Heterogenous High-Performance Computing with ViennaCL";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 88 - 90.

795. C. Poschalko, S. Selberherr:
"Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities";
Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 2011-05-16 - 2011-05-19; in "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 page(s) .

794. L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr:
"A Simulator for Local Anodic Oxidation of Silicon Surfaces";
Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 2011-05-08 - 2011-05-11; in "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8, 695 - 698 doi:10.1109/CCECE.2011.6030543.

793. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2011-05-01 - 2011-05-06; in "Meeting Abstracts", (2011), Vol.MA2011-01(23): 1453, 1.

792. Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement";
Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in "219th ECS Meeting", (2011), Vol.Vol.35, No.5, ISBN: 978-1-56677-866-4, 117 - 122 doi:10.1149/1.3570785.

791. A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr:
"Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method";
Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 2011-03-28 - 2011-04-01; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) .

790. D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
"Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), .

789. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998.

788. L. Filipovic, O. Ertl, S. Selberherr:
"Parallelization Strategy for Hierarchical Run Length Encoded Data Structures";
Talk: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 2011-02-15 - 2011-02-17; in "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9, 131 - 138 doi:10.2316/P.2011.719-045.

787. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60.

786. V. Sverdlov, S. Selberherr:
"Strain Engineering Techniques: A Rigorous Physical Review";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-05.

785. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-06.

784. M. Pourfath, V. Sverdlov, S. Selberherr:
"Transport Modeling for Nanoscale Semiconductor Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2010-11-01 - 2010-11-04; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), Vol.4, ISBN: 978-1-4244-5799-1, 1737 - 1740.

783. V. Sverdlov, S. Selberherr:
"Modeling of Modern MOSFETs with Strain";
Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina; (invited) 2010-11-01 - 2010-11-03; in "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3, 1 - 11.

782. A. Makarov, V. Sverdlov, S. Selberherr:
"A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934.

781. A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr:
"First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory";
Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186.

780. J. Weinbub, R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"A Lightweight Material Library for Scientific Computing in C++";
Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 454 - 458.

779. A. Makarov, V. Sverdlov, S. Selberherr:
"Monte Carlo Simulation of Bipolar Resistive Switching Memories";
Talk: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22.

778. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Enhanced Valley Splitting in Silicon Nanowires and Point Contacts";
Poster: Nanoelectronics Days 2010, Aachen, Germany; 2010-10-04 - 2010-10-07; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 118.

777. G. Mach, R. Heinzl, P. Schwaha, F. Stimpfl, J. Weinbub, S. Selberherr:
"A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1647 - 1650.

776. F. Stimpfl, J. Weinbub, R. Heinzl, P. Schwaha, S. Selberherr:
"A Unified Topological Layer for Finite Element Space Discretization";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1655 - 1658.

775. J. Weinbub, P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"A Dispatched Covariant Type System for Numerical Applications in C++";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0, 1663 - 1666.

774. J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 297 - 300.

773. A. Makarov, V. Sverdlov, S. Selberherr:
"A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399.

772. S. Vitanov, V. Palankovski, S. Selberherr:
"Hydrodynamic Models for GaN-Based HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) .

771. H. Ceric, R. Orio, S. Selberherr:
"Impact of Parameter Variability on Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523.

770. O. Ertl, L. Filipovic, S. Selberherr:
"Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5, 49 - 52 doi:10.1109/SISPAD.2010.5604573.

769. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517.

768. A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39.

767. M. Nedjalkov, S. Selberherr, I. Dimov:
"Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-43.

766. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices";
Talk: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 2010-08-01 - 2010-08-04; in "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274.

765. H. Ceric, R. Orio, S. Selberherr:
"Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170.

764. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312.

763. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 141.

762. M. Pourfath, V. Sverdlov, S. Selberherr:
"Modeling Demands for Nanoscale Devices";
Talk: Device Research Conference, South Bend; (invited) 2010-06-21 - 2010-06-23; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214.

761. J. Weinbub, K. Rupp, S. Selberherr:
"ViennaIPD - An Input Control Language for Scientific Computing";
Talk: Industrial Simulation Conference (ISC), Budapest; 2010-06-07 - 2010-06-09; in "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57, 34 - 38.

760. V. Sverdlov, S. Selberherr:
"Modeling Floating Body Z-RAM Storage Cells";
Talk: 27th International Conference on Microelectronics (MIEL 2010), Nis; (invited) 2010-05-16 - 2010-05-19; in "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0, 45 - 50.

759. C. Poschalko, S. Selberherr:
"Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables";
Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 2010-04-12 - 2010-04-16; in "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9, 1102 - 1105.

758. V. Sverdlov, S. Selberherr:
"Scalability of a Second Generation Z-RAM Cell: A Computational Study";
Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 2010-03-28 - 2010-04-01; in "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9, 232 - 247.

757. V. Sverdlov, O. Baumgartner, S. Selberherr:
"Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films";
Talk: APS March Meeting, Portland; 2010-03-15 - 2010-03-19; in "Bulletin American Physical Society (APS March Meeting 2010)", (2010), Vol.49/2, B9.00001.

756. O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2010-01-25 - 2010-01-27; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92.

755. M. Pourfath, S. Selberherr:
"Modeling Optical Sensors Based on Carbon Nanotubes";
Talk: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi; (invited) 2009-12-16 - 2009-12-19; in "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), 1381 - 1384.

754. M. Pourfath, S. Selberherr:
"Carbon-Based Electronics: A Computational Study";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi; (invited) 2009-12-15 - 2009-12-19; in "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 page(s) .

753. V. Sverdlov, O. Baumgartner, S. Selberherr:
"Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band";
Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 2009-12-09 - 2009-12-11; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1, TP6-03.1 - 2.

752. M. Pourfath, H. Kosina, S. Selberherr:
"Theoretical Study of Graphene Nanoribbon Photo-Detectors";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 2009-11-30 - 2009-12-04; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179.

751. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"Electromigration Failure Development in Modern Dual-Damascene Interconnects";
Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), Vol.15, ISBN: 978-3-90188-237-1, 5 page(s) .

750. V. Sverdlov, S. Selberherr:
"Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach";
Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), Vol.21, ISBN: 978-3-90188-237-1, 4 page(s) .

749. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling Techniques for Strained CMOS Technology";
Talk: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna; (invited) 2009-10-04 - 2009-10-09; in "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5, 3 - 18.

748. M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr:
"Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 2009-09-14 - 2009-09-17; in "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 13 - 14.

747. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222.

746. O. Ertl, S. Selberherr:
"A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 174 - 177 doi:10.1109/SISPAD.2009.5290221.

745. N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck:
"Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 71 - 74 doi:10.1109/SISPAD.2009.5290245.

744. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219.

743. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252.

742. O. Ertl, S. Selberherr:
"Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 61 - 68.

741. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration-Induced Failure Development";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352.

740. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396.

739. N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model";
Talk: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 2009-07-26 - 2009-07-30; in "Book of Abstracts", (2009), 91.

738. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr:
"Mobility Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 2009-07-07 - 2009-07-11; in "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301.

737. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration Induced Voids";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697.

736. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on the Electromigration Lifetime Distribution";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734.

735. V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr:
"Subband Structure in Ultra-Thin Silicon Films";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63.

734. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 2009-06-14 - 2009-06-19; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58.

733. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films";
Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 2009-06-13 - 2009-06-14; in "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96.

732. M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
"Particle Model of the Scattering-Induced Wigner Function Correction";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 79.

731. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93.

730. P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov:
"Classical Approximation of the Scattering Induced Wigner Correction Equation";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 177 - 180 doi:10.1109/IWCE.2009.5091092.

729. V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
"The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158.

728. T. Windbacher, V. Sverdlov, S. Selberherr:
"Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 169 - 172 doi:10.1109/IWCE.2009.5091122.

727. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance";
Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "215th ECS Meeting", (2009), Vol.19/4, ISBN: 978-1-56677-712-4, 15 - 26.

726. V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr:
"Valley Splitting in Thin Silicon Films from a Two-Band k·p Model";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 2009-03-18 - 2009-03-20; in "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280.

725. V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr:
"Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82.

724. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive Biofets";
Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 2009-01-14 - 2009-01-17; in "Final Program and Book of Abstracts", (2009), 42.

723. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive BioFETs";
Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 2009-01-14 - 2009-01-17; in "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2, 24 - 30.

722. M. Pourfath, S. Selberherr:
"Modeling Current Transport in Carbon Nanotube Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2008-12-08 - 2008-12-10; in "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2, 6 page(s) .

721. M. Pourfath, S. Selberherr:
"Analysis of Carbon Nanotube Photo-Detectors";
Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 2008-12-07 - 2008-12-12; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), TU-06.

720. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes";
Talk: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 2008-11-17 - 2008-11-19; in "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), 66 - 67.

719. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Stress-Induced Anisotropy of Electromigration in Copper Interconnects";
Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 2008-11-05 - 2008-11-07; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62.

718. V. Sverdlov, S. Selberherr:
"Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells";
Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 2008-10-27 - 2008-10-29; in "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1, 380 - 384.

717. M. Pourfath, H. Kosina, S. Selberherr:
"Current Transport in Carbon Nanotube Transistors";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 2008-10-20 - 2008-10-23; in "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2, 361 - 364.

716. S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure:
"Ultra-Scaled Z-RAM Cell";
Talk: 2008 IEEE International SOI Conference, New Paltz; 2008-10-06 - 2008-10-09; in "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8, 157 - 158.

715. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger:
"A General Bottom-Up Modeling Approach for BioFETs";
Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 2008-09-29 - 2008-09-30; in "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008), .

714. M. Pourfath, H. Kosina, S. Selberherr:
"Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors";
Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 2008-09-15 - 2008-09-19; in "European Solid-State Device Research Conference", (2008), 214 - 217.

713. O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr:
"Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 345 - 348 doi:10.1109/SISPAD.2008.4648308.

712. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Analysis of Microstructure Impact on Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282.

711. O. Ertl, S. Selberherr:
"Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 325 - 328 doi:10.1109/SISPAD.2008.4648303.

710. R. Orio, H. Ceric, S. Carniello, S. Selberherr:
"Analysis of Electromigration in Redundant Vias";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281.

709. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 265 - 268 doi:10.1109/SISPAD.2008.4648288.

708. V. Sverdlov, T. Windbacher, S. Selberherr:
"Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 145 - 148 doi:10.1109/SISPAD.2008.4648258.

707. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Simulation of Field-Effect Biosensors (BioFETs)";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 193 - 196 doi:10.1109/SISPAD.2008.4648270.

706. C. Poschalko, S. Selberherr:
"Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside";
Talk: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 2008-09-08 - 2008-09-12; in "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7, 109 - 114.

705. R. Orio, S. Carniello, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348.

704. V. Sverdlov, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 159 - 168.

703. C. Poschalko, S. Selberherr:
"Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots";
Talk: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 2008-08-18 - 2008-08-22; in "Proceedings International Symposium on Electromagnetic Compatibility", (2008), Vol.1113, ISBN: 978-1-4244-1699-8, doi:10.1109/ISEMC.2008.4652083.

702. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes";
Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 2008-07-27 - 2008-08-01; in "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7, 507 - 508.

701. R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 2008-07-08 in "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 page(s) .

700. P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 2008-07-08 in "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 6 page(s) .

699. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"TCAD Solutions for Submicron Copper Interconnect";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81.

698. P. Schwaha, F. Stimpfl, R. Heinzl, S. Selberherr:
"A Parallel Delaunay and Advancing Front Mesh Generation Approach";
Talk: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 2008-06-10 - 2008-06-13; in "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 page(s) .

697. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Delaunay Mesh Generation Approach without the Use of Convex Hulls";
Talk: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 2008-06-10 - 2008-06-13; in "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 page(s) .

696. C. Poschalko, S. Selberherr:
"Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model";
Talk: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 2008-05-19 - 2008-05-22; in "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), 634 - 637.

695. R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"A Parallel Generic Scientific Simulation Environment";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 2008-05-13 - 2008-05-16; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), .

694. P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 2008-05-13 - 2008-05-16; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), .

693. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"High Performance Parallel Mesh Generation and Adaptation";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 2008-05-13 - 2008-05-16; in "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008), .

692. H. Ceric, R. Orio, S. Selberherr:
"Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2008-05-11 - 2008-05-14; in "Proceedings 26th International Conference on Microelectronics", (2008), ISBN: 978-1-4244-1881-7, 69 - 76.

691. V. Sverdlov, S. Selberherr:
"Strain-Controlled Valley Splitting in Si-SiGe Heterostructures";
Talk: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 2008-05-11 - 2008-05-14; in "Abstract Book", (2008), 20 - 21.

690. M. Pourfath, S. Selberherr:
"Current Transport in Carbon Nanotube Transistors";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun; (invited) 2008-04-28 - 2008-04-30; in "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9, 6 page(s) .

689. V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr:
"Stress-Induced Valley Splitting in Silicon Thin Films";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 2008-03-12 - 2008-03-14; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96.

688. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 2008-01-23 - 2008-01-25; in "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42.

687. R. Orio, H. Ceric, S. Selberherr:
"Strain-Induced Anisotropy of Electromigration in Copper Interconnect";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

686. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

685. M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN2007), Waikoloa, Hawaii; 2007-12-02 - 2007-12-07; in "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), 37 - 38.

684. R. Heinzl, G. Mach, P. Schwaha, S. Selberherr:
"Labtool - A Managing Software for Computer Courses";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-24 - 2007-10-27; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 488 - 492.

683. R. Heinzl, G. Mach, P. Schwaha, S. Selberherr:
"A Performance Test Platform";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 483 - 487.

682. P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr:
"Electro-Biological Simulation using a Web Front-End";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 493 - 495.

681. F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Multi-Mode Mesh Generation Approach for Scientific Computing";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 506 - 513.

680. V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224.

679. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Predictive Simulation of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 2007-10-14 - 2007-10-17; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31.

678. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63.

677. V. Sverdlov, H. Kosina, S. Selberherr:
"Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 2007-10-01 - 2007-10-05; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), Vol.O1-14, .

676. H. Ceric, A. Nentchev, E. Langer, S. Selberherr:
"Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 37 - 40 doi:10.1007/978-3-211-72861-1_9.

675. J. Cervenka, H. Ceric, O. Ertl, S. Selberherr:
"Three-Dimensional Sacrificial Etching";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 433 - 436 doi:10.1007/978-3-211-72861-1_105.

674. O. Ertl, C. Heitzinger, S. Selberherr:
"Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 417 - 420 doi:10.1007/978-3-211-72861-1_101.

673. A. Nentchev, S. Selberherr:
"On the Magnetic Field Extraction for On-Chip Inductance Calculation";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 349 - 352 doi:10.1007/978-3-211-72861-1_84.

672. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Hydrodynamic Modeling of AlGaN/GaN HEMTs";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65.

671. V. Sverdlov, H. Kosina, S. Selberherr:
"Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model";
Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 2007-09-19 - 2007-09-21; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) .

670. M. Pourfath, H. Kosina, S. Selberherr:
"The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1123-8, 239 - 242.

669. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1124-6, 386 - 389.

668. H. Ceric, S. Selberherr:
"Electromigration Modeling for Interconnect Structures in Microelectronics";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro; (invited) 2007-09-03 - 2007-09-06; in "ECS Transactions", (2007), ISBN: 978-1-56677-565-6, 295 - 304.

667. A. Nentchev, S. Selberherr:
"Three-Dimensional On-Chip Inductance and Resistance Extraction";
Talk: Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro; 2007-09-03 - 2007-09-06; in "20th Symposium on Integrated Circuits and Systems Design", (2007), ISBN: 978-1-59593-910-4, 6 page(s) doi:10.1145/1284480.1284540.

666. R. Heinzl, P. Schwaha, S. Selberherr:
"Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design";
Talk: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 2007-07-22 - 2007-07-25; in "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-05-0, 100 - 107.

665. P. Schwaha, M. Schwaha, R. Heinzl, E. Ungersböck, S. Selberherr:
"Simulation Methodologies for Scientific Computing - Modern Application Design";
Talk: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 2007-07-22 - 2007-07-25; in "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-07-4, 270 - 276.

664. R. Heinzl, P. Schwaha, C. Giani, S. Selberherr:
"Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment";
Talk: High-End Visualization Workshop, Obergurgl; 2007-06-18 - 2007-06-22; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 5 - 13.

663. P. Schwaha, C. Giani, R. Heinzl, S. Selberherr:
"Visualization of Polynomials Used in Series Expansions";
Talk: High-End Visualization Workshop, Obergurgl; 2007-06-18 - 2007-06-22; in "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4, 139 - 148.

662. P. Schwaha, R. Heinzl, G. Mach, C. Pogoreutz, S. Fister, S. Selberherr:
"A High Performance Webapplication for an Electro-Biological Problem";
Talk: 21st European Conference on Modelling and Simulation, Prag; 2007-06-04 - 2007-06-06; in "Proceedings 21st European Conference on Modelling and Simulation", (2007), ISBN: 978-0-9553018-2-7, 218 - 222 doi:10.7148/2007-0218.

661. H. Ceric, S. Selberherr:
"Electromigration in Interconnect Structures of Microelectronic Circuits";
Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija; (invited) 2007-05-21 - 2007-05-25; in "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8, 23 - 28.

660. C. Heitzinger, Ch. Ringhofer, S. Selberherr:
"Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model";
Talk: Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago; 2007-05-06 - 2007-05-10; in "211th ECS Meeting", (2007), Vol.0947, ISSN: 1091-8213, .

659. J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Masapalomas; 2007-05-02 - 2007-05-04; in "Proceedings of SPIE", (2007), Vol.6589-6593, ISBN: 978-0-8194-6726-3, 65891L.1 - 65891L.9.

658. H. Ceric, E. Langer, S. Selberherr:
"Modeling of Residual Stresses in Thin Metal Films";
Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 2007-04-04 - 2007-04-06; in "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), 18.

657. H. Ceric, E. Langer, S. Selberherr:
"Three-Phase Model for the Volmer-Weber Crystal Growth";
Talk: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 2007-02-20 - 2007-02-23; in "Nanostructures and Carrier Interactions", (2007), 127.

656. Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr:
"Investigation of Intrinsic Stress Effects in Cantilever Structures";
Talk: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 2007-01-16 - 2007-01-19; in "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2, 4 page(s) .

655. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, P. Wong, Y. Nishi, K. Saraswat:
"Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2006-12-11 - 2006-12-13; in "2006 International Electron Devices Meeting (IEDM) Technical Digest", (2006), ISBN: 1-4244-0438-x, 937 - 940 doi:10.1109/IEDM.2006.346938.

654. M. Pourfath, H. Kosina, S. Selberherr:
"A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2006-12-11 - 2006-12-13; in "2006 International Electron Devices Meeting (IEDM) Technical Digest", (2006), ISBN: 1-4244-0438-x, 819 - 822 doi:10.1109/IEDM.2006.346739.

653. E. Ungersböck, H. Kosina, S. Selberherr:
"The Influence of Stress on Inversion Layer Mobility";
Talk: Advanced Heterostructure Workshop (AHW), Kona; (invited) 2006-12-03 - 2006-12-08; in "Abstracts Advanced Heterostructure Workshop", (2006), TH-2.

652. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
"Analysis of Hole Transport in Arbitrarily Strained Germanium";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

651. M. Karner, S. Holzer, M. Vasicek, W. Gös, M. Wagner, H. Kosina, S. Selberherr:
"Numerical Analysis of Gate Stacks";
Talk: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

650. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

649. R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
"A Study of Boron Implantation into High Ge Content SiGe Alloys";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

648. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr:
"Performance Analysis for High-Precision Interconnect Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Toulouse; 2006-10-23 - 2006-10-25; in "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9, 113 - 116.

647. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain Engineering for CMOS Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2006-10-23 - 2006-10-26; in "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127.

646. R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr:
"A Generic Topology Library";
Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 2006-10-22 - 2006-10-26; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 85 - 93.

645. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"A Generic Discretization Library";
Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 2006-10-22 - 2006-10-26; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 95 - 100.

644. S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr:
"An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 2006-09-27 - 2006-09-29; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244.

643. A. Nentchev, J. Cervenka, G. Marnaus, H. Enichlmair, S. Selberherr:
"Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 2006-09-27 - 2006-09-29; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 235 - 238.

642. M. Pourfath, H. Kosina, S. Selberherr:
"Optimal Design for Carbon Nanotube Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-19 - 2006-09-21; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 210 - 213.

641. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-18 - 2006-09-22; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 178 - 181.

640. Ch. Hollauer, H. Ceric, S. Selberherr:
"Modeling of Intrinsic Stress Effects in Deposited Thin Films";
Talk: EUROSENSORS XX, Göteborg; 2006-09-17 - 2006-09-20; in "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2, 324 - 325.

639. A. Sheikholeslami, S. Selberherr, F. Parhami, H. Puchner:
"Planarization of Passivation Layers during Manufacturing Processes of Image Sensors";
Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 2006-09-11 - 2006-09-14; in "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x, 35 - 36.

638. M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr:
"A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method";
Talk: European Microwave Week (EUMW), Manchester; 2006-09-10 - 2006-09-15; in "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0, 1 - 4.

637. H. Ceric, Ch. Hollauer, S. Selberherr:
"Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 192 - 195 doi:10.1109/SISPAD.2006.282869.

636. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833.

635. M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 314 - 317 doi:10.1109/SISPAD.2006.282898.

634. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 208 - 211 doi:10.1109/SISPAD.2006.282873.

633. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834.

632. R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr:
"Monte Carlo Simulation of Boron Implantation into (100) Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 381 - 384 doi:10.1109/SISPAD.2006.282914.

631. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 2006-08-28 - 2006-09-01; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216.

630. H. Ceric, J. Cervenka, E. Langer, S. Selberherr:
"Moving Boundary Applications in Process and Interconnect TCAD";
Talk: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 2006-08-13 - 2006-08-19; in "Proceedings Mini-Workshop on Anisotropic Motion Laws", (2006), Vol.Report No.38/2006, 13 - 16.

629. A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
"Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
Talk: International Conference on Nanoscience and Technology (ICNT), Basel; 2006-07-30 - 2006-08-04; in "International Conference on Nanoscience and Technology (ICNT 2006)", (2006), ISBN: 3-905084-71-6, 163 - 164.

628. K. Riedling, S. Selberherr:
"A Web-Based Publication Database for Performance Evaluation and Research Documentation";
Talk: International Conference for Engineering Education (ICEE), San Juan, Puerto Rico; 2006-07-23 - 2006-07-28; in "Proceedings of the ICEE 2006", (2006), ISBN: 1-58874-648-8, R2F-5 - R2F-10.

627. K. Riedling, S. Selberherr:
"A Flexible Web-Based Publication Database";
Talk: F. Malpica, A. Tremante, F. Welsch (ed); International Conference on Education and Information Systems: Technologies and Applications (EISTA), Orlando, Florida, USA; 2006-07-20 - 2006-07-23; in "Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006)", (2006), ISBN: 980-6560-79-5, 262 - 267.

626. S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr:
"A Multi-Purpose Optimization Framework for TCAD Applications";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 76.

625. H. Ceric, Ch. Hollauer, S. Selberherr:
"Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9, 359 - 363.

624. S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr:
"Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157.

623. R. Wittmann, H. Puchner, H. Ceric, S. Selberherr:
"Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44.

622. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP-A Gate Stack Analyzer";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102.

621. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Talk: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa; (invited) 2006-06-25 - 2006-06-28; in "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), 1 - 2.

620. M. Pourfath, H. Kosina, S. Selberherr:
"Optimizing the Performance of Carbon Nanotube Transistors";
Poster: IEEE Conference on Nanotechnology (IEEE-NANO), Cincinnati; 2006-06-17 - 2006-06-20; in "Sixth IEEE Conference on Nanotechnology, Vol.2", (2006), ISBN: 1-4244-0078-3, 520 - 523.

619. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154.

618. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations";
Talk: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18.

617. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256.

616. M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 345 - 346.

615. M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling-CNTFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 291 - 292.

614. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30.

613. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142.

612. M. Pourfath, H. Kosina, S. Selberherr:
"On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 page(s) .

611. A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) .

610. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73.

609. S. Holzer, S. Selberherr:
"Optimization Issue in Interconnect Analysis";
Talk: International Conference on Microelectronics (MIEL), Beograd; (invited) 2006-05-14 - 2006-05-17; in "Proceedings International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 465 - 470.

608. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Flow in Upcoming Microelectronic Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8.

607. S. Selberherr:
"Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices";
Talk: Workshop on Semiconductors and Micro- & Nano-Technology (SEMINATEC), Campinas; (invited) 2006-02-09 - 2006-02-10; in "Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology", (2006), 12 - 15.

606. V. Palankovski, A. Marchlewski, E. Ungersböck, S. Selberherr:
"Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 14-1 - 14-9.

605. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Transport in Nanoelectronic Semiconductor Devices";
Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 2006-01-10 - 2006-01-13; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495.

604. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field Effect Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2005-12-19 - 2005-12-21; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390.

603. S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr:
"Modeling of Velocity-Field Characteristics in Strained Silicon";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol.Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063.

602. S. Holzer, S. Selberherr:
"Material Parameter Identification for Interconnect Analysis";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; (invited) 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol.Vol. 2, ISBN: 81-7764-946-9, 635 - 641.

601. M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Field Effect Transistors";
Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 2005-11-27 - 2005-12-02; in "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), 155 - 156.

600. E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"Three-Dimensional State-Of-The-Art Topography Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 430 - 432.

599. A. Nentchev, R. Sabelka, W. Wessner, S. Selberherr:
"On Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), 420 - 424.

598. R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
"Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET";
Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2005-10-17 - 2005-10-20; in "2005 IEEE International Integrated Reliability Workshop Final Report", (2005), ISBN: 0-7803-8992-1, 99 - 102.

597. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
Talk: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), ISSN: 1091-8213, 1 page(s) .

596. M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics";
Talk: Meeting of the Electrochemical Society (ECS), Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), Vol.1119, ISSN: 1091-8213, 1 page(s) .

595. A. Nentchev, R. Sabelka, S. Selberherr:
"Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions";
Talk: VLSI Multilevel Interconnection Conference (VMIC), Fremont; 2005-10-03 - 2005-10-06; in "2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference", (2005), 547 - 552.

594. H. Ceric, Ch. Hollauer, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 2005-09-12 - 2005-09-14; in "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), P 17.

593. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 541 - 544.

592. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96.

591. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512.

590. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Stress Dependent Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 183 - 186 doi:10.1109/SISPAD.2005.201503.

589. M. Karner, A. Gehring, H. Kosina, S. Selberherr:
"Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 35 - 38 doi:10.1109/SISPAD.2005.201466.

588. A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 187 - 190 doi:10.1109/SISPAD.2005.201504.

587. W. Wessner, H. Ceric, J. Cervenka, S. Selberherr:
"Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 147 - 150 doi:10.1109/SISPAD.2005.201494.

586. R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the 10th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 191 - 194 doi:10.1109/SISPAD.2005.201505.

585. A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr:
"Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol.Vol. 2, ISBN: 0-7803-9345-7, 279 - 282.

584. M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr:
"The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors";
Talk: IEEE Conference on Nanotechnology (IEEE-NANO), Nagoya; 2005-07-11 - 2005-07-15; in "Proceedings of IEEE-NANO 2005", (2005), Vol.CDROM ISBN: 0-7803-9200-0, 4 page(s) .

583. A. Gehring, S. Selberherr:
"Current Transport Models for Nano-Scale Semiconductor Devices";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 2005-07-10 - 2005-07-13; in "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", (2005), Vol.Vol. 6, ISBN: 980-6560-58-2, 366 - 371.

582. M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 95 - 96.

581. H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr:
"Comprehensive Analysis of Vacancy Dynamics Due to Electromigration";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103.

580. H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37.

579. M. Pourfath, W.J. Park, H. Kosina, S. Selberherr:
"Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 50 - 51.

578. Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr:
"Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts";
Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol.Vol. 2, ISBN: 3-901167-12-9, 637 - 640.

577. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Talk: Proceedings of SPIE - The International Society for Optical Engineering, Sevilla; 2005-05-09 - 2005-05-11; in "VLSI Circuits and Systems II", (2005), ISBN: 0-8194-5832-5, 380 - 387.

576. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"A Physically-Based Electron Mobility Model for Strained Si Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16.

575. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48.

574. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis";
Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623.

573. M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 128 - 131.

572. R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr:
"Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol.Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32.

571. M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707, 95 - 98.

570. A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Level Set Method Based General Topography Simulator and its Application in Interconnect Processes";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707, 139 - 142.

569. A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 2005-01-19 - 2005-01-21; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72.

568. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba; (invited) 2004-12-17 - 2004-12-22; in "Extended Abstracts of WOFE 2004", (2004), 6.

567. V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

566. S. Wagner, T. Grasser, S. Selberherr:
"Physical Modeling of Semiconductor Devices for Microwave Applications";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

565. W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) .

564. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126.

563. A. Gehring, S. Selberherr:
"Gate Current Modeling for MOSFETs";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana; (invited) 2004-11-03 - 2004-11-05; in "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5, 1 - 8.

562. A. Gehring, S. Selberherr:
"Evolution of Current Transport Models for Engineering Applications";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; (invited) 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 20 - 21 doi:10.1109/IWCE.2004.1407298.

561. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308.

560. M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the 10th International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 237 - 238 doi:10.1109/IWCE.2004.1407414.

559. A. Gehring, S. Selberherr:
"Gate Leakage Models for Device Simulation";
Talk: R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (ed); International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 2004-10-18 - 2004-10-21; in "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", (2004), Vol.Volume II, ISBN: 0-7803-8511-x, 971 - 976.

558. R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 2004-10-03 - 2004-10-08; in "206th ECS Meeting", (2004), ISBN: 1-56677-420-9, 181 - 192.

557. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in "Proceeding of the 34th European Solid-State Device Research Conference", (2004), ISBN: 0780384784, 429 - 432.

556. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

555. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69.

554. H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78.

553. A. Gehring, S. Selberherr:
"On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 25 - 28 doi:10.1007/978-3-7091-0624-2_6.

552. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1.

551. T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26.

550. A. Hössinger, R. Minixhofer, S. Selberherr:
"Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 129 - 132 doi:10.1007/978-3-7091-0624-2_31.

549. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
"Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 149 - 152 doi:10.1007/978-3-7091-0624-2_35.

548. S. Wagner, T. Grasser, S. Selberherr:
"Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 351 - 354 doi:10.1007/978-3-7091-0624-2_83.

547. W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr:
"Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 165 - 168 doi:10.1007/978-3-7091-0624-2_39.

546. R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the 9th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 169 - 172 doi:10.1007/978-3-7091-0624-2_40.

545. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

544. T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
"SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477.

543. T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
"Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77.

542. S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493.

541. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Concepts and Implementation of an Advanced Equation Assembly Module";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2004-07-18 - 2004-07-21; in "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2, 150 - 155.

540. A. Gehring, S. Selberherr:
"Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 2004-07-05 - 2004-07-08; in "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7, 61 - 64.

539. S. Wagner, T. Grasser, S. Selberherr:
"Benchmarking Linear Solvers with Semiconductor Simulation Examples";
Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 2004-06-30 - 2004-07-02; in "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 page(s) .

538. S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin; (invited) 2004-06-24 - 2004-06-26; in "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7, 36 - 41.

537. V. Palankovski, S. Selberherr:
"Analysis of High Speed Heterostructure Devices";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2004-05-16 - 2004-05-19; in "2004 International Conference on Microelectronics", (2004), ISBN: 0-7803-8166-1, 115 - 122 doi:10.1109/ICMEL.2004.1314567.

536. A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
"Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
Talk: International Conference on Microelectronics (MIEL), Nis; 2004-05-16 - 2004-05-19; in "2004 International Conference on Microelectronics", (2004), ISBN: 0-7803-8166-1, 241 - 244.

535. R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), Vol.1, ISBN: 0-7803-8422-9, 114 - 117.

534. V. Palankovski, S. Selberherr:
"Numerical Simulation of Selected Semiconductor Devices";
Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), Vol.1, ISBN: 0-7803-8422-9, 122 - 125 doi:10.1109/ISSE.2004.1490390.

533. A. Sheikholeslami, C. Heitzinger, F. Badrieh, H. Puchner, S. Selberherr:
"Three-Dimensional Topography Simulation Based on a Level Set Method";
Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), Vol.2, ISBN: 0-7803-8422-9, 263 - 265.

532. S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
"Optimization and Inverse Modeling for TCAD Applications";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116.

531. E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120.

530. C. Heitzinger, A. Sheikholeslami, J. Fugger, O. Häberlen, M. Leicht, S. Selberherr:
"A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm";
Talk: Meeting of the Electrochemical Society, Electrochemical Processing in ULSI and MEMS, San Antonio; 2004-05-09 - 2004-05-13; in "205th ECS Meeting", (2004), 132 - 142.

529. V. Palankovski, S. Selberherr:
"Challenges in Modeling of High-Speed Electron Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; (invited) 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 45 - 50.

528. V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2003-12-16 - 2003-12-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4, 127 - 132 doi:10.1109/EDSSC.2003.1283498.

527. E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Analysis of Carrier Transport in Carbon Nanotube FET Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 1059 - 1061.

526. S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838.

525. V. Palankovski, S. Wagner, S. Selberherr:
"Numerical Analysis of Compound Semiconductor RF Devices";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAsIC), San Diego; (invited) 2003-11-09 - 2003-11-12; in "Proceedings GaAs IC Symposium", (2003), ISBN: 0-7803-7833-4, 107 - 110 doi:10.1109/GAAS.2003.1252374.

524. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Generally Applicable Approach for Advanced Equation Assembling";
Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 2003-11-03 - 2003-11-05; in "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6, 494 - 499.

523. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced Equation Assembling Techniques for Numerical Simulators";
Talk: European Simulation and Modeling Conference (ESMC), Naples; 2003-10-27 - 2003-10-29; in "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x, 390 - 394.

522. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Simulator Module for Advanced Equation Assembling";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 55 - 64.

521. W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46.

520. R. Wittmann, A. Hössinger, S. Selberherr:
"Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 35 - 40.

519. F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr:
"Static and Transient Simulation of Inelastic Trap-Assisted Tunneling";
Talk: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 2003-10-16 - 2003-10-17; in "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1, 65 - 68.

518. C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature Scale Simulation of Advanced Etching Processes";
Talk: Meeting of the Electrochemical Society, Physical Electrochemistry, Orlando; 2003-10-12 - 2003-10-16; in "204th ECS Meeting", (2003), ISBN: 1-56677-398-9, 1259.

517. J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382.

516. A. Sheikholeslami, C. Heitzinger, S. Selberherr, F. Badrieh, H. Puchner:
"Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 481 - 486.

515. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 383 - 388.

514. W. Wessner, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 523 - 528.

513. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202, 263 - 268.

512. T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 581 - 584.

511. F. Badrieh, H. Puchner, C. Heitzinger, A. Sheikholeslami, S. Selberherr:
"From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 441 - 444.

510. A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr:
"Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 473 - 476.

509. C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
"A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 457 - 460.

508. Ch. Hollauer, H. Ceric, S. Selberherr:
"Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 383 - 386.

507. R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters Using Inverse Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 363 - 366.

506. E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3, 411 - 414.

505. H. Kosina, M. Nedjalkov, S. Selberherr:
"Solution of the Space-Dependent Wigner Equation Using a Particle Model";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

504. M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

503. T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556.

502. K. Dragosits, V. Palankovski, S. Selberherr:
"Mobility Modeling in Presence of Quantum Effects";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 271 - 274 doi:10.1109/SISPAD.2003.1233689.

501. T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 63 - 66 doi:10.1109/SISPAD.2003.1233638.

500. A. Hössinger, J. Cervenka, S. Selberherr:
"A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 259 - 262 doi:10.1109/SISPAD.2003.1233686.

499. H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
"Comparison of Numerical Quantum Device Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 171 - 174 doi:10.1109/SISPAD.2003.1233664.

498. S. Smirnov, H. Kosina, S. Selberherr:
"Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 55 - 58 doi:10.1109/SISPAD.2003.1233636.

497. W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the 8th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 109 - 112 doi:10.1109/SISPAD.2003.1233649.

496. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Quasi-Particle Model of the Electron - Wigner Potential Interaction";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 2003-07-28 - 2003-08-01; in "Proceedings HCIS-13", (2003), Th 5-1.

495. V. Palankovski, S. Selberherr:
"Modeling High Speed Semiconductor Devices of Modern Communication Systems";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2003-07-27 - 2003-07-30; in "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9, 97 - 102.

494. V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Talk: Symposium on Diagnostics and Yield, Warsaw; (invited) 2003-06-22 - 2003-06-25; in "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), 1 - 11.

493. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 154 - 158.

492. A. Sheikholeslami, C. Heitzinger, S. Selberherr:
"A Method for Generating Structurally Aligned Grids Using a Level Set Approach";
Talk: European Simulation Multiconference (ESM), Nottingham; 2003-06-09 - 2003-06-11; in "Proc. 17th European Simulation Multiconference: Modelling and Simulation", (2003), ISBN: 3-936150-25-7, 496 - 501.

491. R. Wittmann, A. Hössinger, S. Selberherr:
"Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 159 - 163.

490. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 24.

489. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 35 - 36.

488. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 40 - 41.

487. A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 2003-05-25 - 2003-05-28; in "Book of Abstracts of the 9th International Workshop on Computational Electronics (IWCE)", (2003), 105 - 106.

486. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Talk: International Workshop on Computational Electronics (IWCE), Rome, Italy; 2003-05-25 - 2003-05-28; in "Book of Abstracts of the 9th International Workshop on Computational Electronics (IWCE)", (2003), 35 - 36.

485. A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr:
"Simulation of Void Formation in Interconnect Lines";
Talk: International Symposium on Microtechnologies for the New Millennium, Gran Canaria; 2003-05-19 - 2003-05-21; in "Proc. of SPIE-The International Society for Optical Engineering, VLSI Circuits and Systems", (2003), ISBN: 0-8194-4977-6, 445 - 452.

484. C. Heitzinger, A. Sheikholeslami, H. Puchner, S. Selberherr:
"Predictive Simulation of Void Formation During the Deposition of Silicon Nitride and Silicon Dioxide Films";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 356 - 365.

483. J.M. Park, T. Grasser, S. Selberherr:
"High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 273 - 282.

482. A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134.

481. T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 105 - 108.

480. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51.

479. H. Kosina, M. Nedjalkov, S. Selberherr:
"Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 190 - 193.

478. H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
"Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145.

477. C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 702 - 711.

476. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

475. V. Palankovski, S. Selberherr:
"Optimization of SiGe HBTs for Industrial Applications";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; (invited) 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 267 - 268.

474. S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 83 - 84.

473. M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Talk: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 2002-12-08 - 2002-12-13; in "Fourth International Conference on Low Dimensional Structures and Devices", (2002), 5.

472. S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0, 50 - 55 doi:10.1109/EDMO.2002.1174929.

471. R. Klima, T. Grasser, S. Selberherr:
"Controlling Scheme of the Device Simulator MINIMOS-NT";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 80 - 84.

470. R. Minixhofer, G. Röhrer, S. Selberherr:
"Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 70 - 74.

469. V. Palankovski, R. Klima, R. Schultheis, S. Selberherr:
"Three-Dimensional Analysis of Leakage Currents in III-V HBTs";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAsIC), Monterey; 2002-10-20 - 2002-10-23; in "Proceedings GaAs IC Symposium", (2002), ISBN: 0-7803-7447-9, 229 - 232 doi:10.1109/GAAS.2002.1049066.

468. C. Heitzinger, A. Sheikholeslami, S. Selberherr:
"Predictive Simulation of Etching and Deposition Processes Using the Level Set Method";
Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Prague; 2002-10-13 - 2002-10-17; in "ChiPPS-2002 Challenges in Predictive Process Simulation", (2002), 65 - 66.

467. V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3, 303 - 306.

466. K. Dragosits, V. Palankovski, S. Selberherr:
"Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 113 - 116.

465. A. Gehring, H. Kosina, S. Selberherr:
"Transmission Coefficient Estimation for High-k Gate Stack Evaluation";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 156 - 159.

464. R. Klima, T. Grasser, S. Selberherr:
"The Control System of the Device Simulator MINIMOS-NT";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 281 - 284.

463. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Particle Model for Wigner Transport through Tunneling Structures";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 136 - 139.

462. V. Gopinath, S. Aronowitz, V. Palankovski, S. Selberherr:
"Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior";
Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in "Proceedings of the 32nd European Solid-State Device Research Conference", (2002), ISBN: 88-900847-8-2, 631 - 634 doi:10.1109/ESSDERC.2002.195010.

461. C. Heitzinger, S. Selberherr, J. Fugger, O. Häberlen:
"On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method";
Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in "Proceedings of the 32nd European Solid-State Device Research Conference", (2002), ISBN: 88-900847-8-2, 347 - 350.

460. J.M. Park, R. Klima, S. Selberherr:
"Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance";
Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in "Proceedings of the 32nd European Solid-State Device Research Conference", (2002), ISBN: 88-900847-8-2, 283 - 286.

459. R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
"Three-Dimensional Analysis of a MAGFET at 300 K and 77 K";
Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in "Proceedings of the 32nd European Solid-State Device Research Conference", (2002), ISBN: 88-900847-8-2, 151 - 154.

458. T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
"A Strategy to Enforce the Discrete Minimax Principle on Finite