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Publication list for
Viktor Sverdlov
as author or essentially involved person

360 records


Books and Editorships


8. V. Sverdlov, S. Selberherr:
"Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
Solid-State Electronics, Elsevier, (2017), ISSN: 0038-1101, 206 page(s) .

7. V. Sverdlov, S. Selberherr:
"Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016";
Solid-State Electronics, 128, (2017), 1 - 2 doi:10.1016/j.sse.2016.10.015.

6. B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4, 88 page(s) .

5. V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr:
"2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
IEEE, (2016), ISBN: 978-1-4673-8608-1, 272 page(s) .

4. V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr:
"2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-29-8, 166 page(s) .

3. V. Sverdlov, S. Selberherr, F. Gamiz, S. Cristoloveanu:
"Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)";
IEEE Xplore, in "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-1-4673-8609-8, 1 doi:10.1109/ULIS.2016.7440034.

2. V. Sverdlov, B. Jonker, K. Ishibashu, S.M. Goodnick, S. Selberherr:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2014), ISBN: 978-3-901578-28-1, 84 page(s) .

1. V. Sverdlov:
"Strain-Induced Effects in Advanced MOSFETs";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2011), ISBN: 978-3-7091-0381-4, 252 page(s) doi:10.1007/978-3-7091-0382-1.


Publications in Scientific Journals


47. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34.

46. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"CMOS-Compatible Spintronic Devices: A Review";
Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006.

45. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072.

44. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007.

43. V. Sverdlov, S. Selberherr:
"Silicon Spintronics: Progress and Challenges";
Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002.

42. T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of multipurpose spintronic devices";
International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215.

41. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023.

40. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056.

39. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection in a Semiconductor Through a Space-Charge Layer";
Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035.

38. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89.

37. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141.

36. D. Osintsev, V. Sverdlov, S. Selberherr:
"Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29.

35. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Spin Transfer Oscillator";
Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936.

34. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y.

33. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017.

32. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683.

31. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055.

30. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana, 42, (2013), 205 - 211.

29. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Multiple Purpose Spin Transfer Torque Operated Devices";
Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W.

28. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030.

27. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565.

26. A. Makarov, V. Sverdlov, S. Selberherr:
"Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020.

25. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015.

24. F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
"A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1.

23. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022.

22. O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211.

21. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376.

20. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503.

19. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010.

18. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8.

17. T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting";
Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008.

16. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling of Modern MOSFETs with Strain";
Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1.

15. V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
Journal Integrated Circuits and Systems, 4, (2009), 55 - 60.

14. S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018.

13. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247.

12. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019.

11. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7.

10. V. Sverdlov, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054.

9. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Current Transport Models for Nanoscale Semiconductor Devices";
Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001.

8. V. Sverdlov, E. Ungersböck, H. Kosina:
"Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain";
IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340.

7. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations";
Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022.

6. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
"The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880.

5. Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev:
"A Numerical Study of Transport and Shot Noise in 2D Hopping";
Journal of Physics: Condensed Matter, 18, (2006), 1999 - 2012.

4. Y. Kinkhabwala, V. Sverdlov, K. Likharev:
"A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport";
Journal of Physics: Condensed Matter, 18, (2006), 2013 - 2027.

3. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6.

2. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field-Effect Transistors";
Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009.

1. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013.


Contributions to Books


39. E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome:
"Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices";
in "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", 27, E. Gutierrez-Dominguez (ed); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, 17 - 185 doi:10.1049/PBCS027E_ch2.

38. V. Sverdlov, D. Osintsev, S. Selberherr:
"Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
in "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, (invited) 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531-003.

37. V. Sverdlov, S. Selberherr:
"Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 202 - 205 doi:10.1109/ULIS.2016.7440088.

36. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
in "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6.

35. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst.

34. J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
"Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31.

33. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
in "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., (invited) 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001.

32. V. Sverdlov, S. Selberherr:
"Spin-Based CMOS-Compatible Devices";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, (invited) 2015, ISBN: 978-3-319-26519-3, 42 - 49 doi:10.1007/978-3-319-26520-9_4.

31. V. Sverdlov, S. Selberherr:
"Spin-Based Silicon and CMOS-Compatible Devices";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, (invited) 2015, ISBN: 978-1-62332-238-0, 223 - 231 doi:10.1149/06605.0223ecst.

30. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
in "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5", F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst.

29. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion and the Role of Screening Effects in Semiconductors";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865825.

28. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 58 - 61.

27. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing";
in "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", issued by CRC Press; T. Brozek (ed); CRC Press, 2014, ISBN: 978-1-4822-1490-1, 221 - 259.

26. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
in "Future Information Engineering", G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

25. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824.

24. D. Osintsev, V. Sverdlov, S. Selberherr:
"Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
in "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, Switzerland, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7.

23. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
in "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198.

22. V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33.

21. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862.

20. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory";
in "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2013, ISBN: 978-1118-44216-6, 93 - 101 doi:10.1002/9781118678107.ch6.

19. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
in "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", issued by The Electrochemical Society; Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed); ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208 doi:10.1149/05305.0203ecst.

18. A. Makarov, V. Sverdlov, S. Selberherr:
"MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242842.

17. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
in "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4 doi:10.1109/ICCDCS.2012.6188899.

16. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242850.

15. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72.

14. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
in "Lecture Notes in Computer Science, Vol. 6046", I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer, 2011, ISBN: 978-3-642-18465-9, 87 - 94 doi:10.1007/978-3-642-18466-6_9.

13. T. Windbacher, V. Sverdlov, S. Selberherr:
"Classical Device Modeling";
in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer, (invited) 2011, ISBN: 978-1-4419-8839-3, 1 - 96 doi:10.1007/978-1-4419-8840-9_1.

12. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2010, ISBN: 978-0-470-55137-0, 281 - 291 doi:10.1002/9780470649343.ch24.

11. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 443 - 450 doi:10.1007/978-3-642-12535-5_52.

10. T. Windbacher, V. Sverdlov, S. Selberherr:
"Biotin-Streptavidin Sensitive BioFETs and Their Properties";
in "Biomedical Engineering Systems and Technologies", Springer, 2010, ISBN: 978-3-642-11720-6, 85 - 95 doi:10.1007/978-3-642-11721-3_6.

9. V. Sverdlov, E. Ungersböck, H. Kosina:
"Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
in "Lecture Notes in Computer Science Vol. 4818", Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-80-86407-12-8, 157 - 164.

8. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
"Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425.

7. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
in "NATO Security through Science Series Vol.2006", Springer-Verlag, Netherlands, 2007, ISBN: 978-1-4020-6378-7, 357 - 362.

6. V. Sverdlov, E. Ungersböck, H. Kosina:
"Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
in "Springer Lecture Notes", Springer, 2007, 62 - 63.

5. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1389 - 1390 doi:10.1063/1.2730422.

4. V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
in "Lecture Notes in Computer Science, Vol. 3743", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2006, ISBN: 3-540-31994-8, 594 - 601 doi:10.1007/11666806_68.

3. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 45 - 54 doi:10.1149/1.2355793.

2. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
in "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", issued by The Electrochemical Society; J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (ed); ECS Transactions, (invited) 2006, ISBN: 1-56677-512-4, 207 - 216.

1. V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr:
"Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays";
in "Unsolved Problems of Noise and Fluctuations", issued by New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, 177 - 182.


Talks and Poster Presentations (with Proceedings-Entry)


249. V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study";
Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 2017-06-05 - 2017-06-09; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 88 - 90.

248. V. Sverdlov, S. Selberherr:
"Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 2017-05-28 - 2017-05-30; in "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869, 57.

247. S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
"Exploiting Spin-Transfer Torque for Non-Volatile Computing";
Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 2017-03-16 - 2017-03-18; in "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), 130.

246. V. Sverdlov, S. Selberherr:
"Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
Talk: APS March Meeting, New Orleans, USA; 2017-03-13 - 2017-03-17; in "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503, .

245. V. Sverdlov, J. Weinbub, S. Selberherr:
"Modeling Spin-Dependent Phenomena for New Device Applications";
Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 45 - 46.

244. V. Sverdlov, J. Ghosh, S. Selberherr:
"Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 7.

243. T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr:
"Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 43.

242. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-16; in "Proceedings of the ESSDERC 46th European Solid-State Device Research Conference", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648.

241. V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210.

240. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
Talk: SISPAD Workshop, Nürnberg, Germany; 2016-09-05 in "21st International Conference on Simulation of Semiconductor Processes and Devices", (2016), .

239. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
Talk: Spintronics IX, San Diego, CA, USA; (invited) 2016-08-28 - 2016-09-01; in "Proceedings of SPIE", (2016), Vol.9931, 12 page(s) doi:10.1117/12.2236151.

238. A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 2016-07-04 - 2016-07-08; in "Proceedings of the ICEM 2016", (2016), 1 page(s) .

237. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 2016-05-25 - 2016-05-27; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) .

236. T. Windbacher, V. Sverdlov, S. Selberherr:
"Magnetic Nonvolatile Processing Environment";
Talk: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia; (invited) 2016-05-19 - 2016-05-20; in "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", (2016), 42 - 43.

235. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Nanoelectronics with Spin";
Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 2016-04-04 - 2016-04-06; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20.

234. V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
"Silicon Spintronics";
Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 2016-03-21 - 2016-03-24; in "Book of Abstracts of the 2016 EMN Meeting on Magnetic Materials", (2016), 37 - 38.

233. V. Sverdlov, S. Selberherr:
"Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures";
Talk: APS March Meeting, Baltimore, USA; 2016-03-14 - 2016-03-18; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), Vol.61/1, ISSN: 0003-0503, 1 page(s) .

232. V. Sverdlov, S. Selberherr:
"Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), ISBN: 978-3-901578-29-8, 116 - 117.

231. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
IEEE Xplore, in "Proceedings of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479.

230. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"A Novel Method of SOT-MRAM Switching";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

229. V. Sverdlov, S. Selberherr:
"Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015), .

228. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
Talk: Energy Materials Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 2015-11-16 - 2015-11-19; in "Book of Abstract of the Energy Materials Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16.

227. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 2015-10-12 - 2015-10-14; in "Technical Digest of the 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 105 - 106.

226. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 140 - 141.

225. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 2015-09-24 - 2015-09-26; in "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), 175.

224. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
Talk: European Materials Research Society (EMRS), Warsaw, Poland; 2015-09-15 - 2015-09-18; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) .

223. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313.

222. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357.

221. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36.

220. J. Ghosh, V. Sverdlov, S. Selberherr:
"Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301961.

219. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"CMOS-Compatible Spintronic Devices";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 2015-09-01 - 2015-09-04; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103.

218. J. Ghosh, V. Sverdlov, S. Selberherr:
"Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 130.

217. V. Sverdlov, S. Selberherr:
"Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 114.

216. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 2015-06-29 - 2015-07-02; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236.

215. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics: Recent Advances and Challenges";
International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 2015-06-29 - 2015-06-30; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7.

214. V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
"Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63.

213. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62.

212. D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin Lifetime in MOSFETs: A High Performance Computing Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61.

211. V. Sverdlov, S. Selberherr:
"Spin-Based CMOS-Compatible Devices";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69.

210. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

209. V. Sverdlov, S. Selberherr:
"Spin-Based Silicon and CMOS-Compatible Devices";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

208. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) .

207. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 2015-05-20 - 2015-05-22; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58.

206. V. Sverdlov, S. Selberherr:
"Spin-Based Devices for Future Microelectronics";
Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 2015-05-04 - 2015-05-06; in "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 page(s) doi:10.1109/ISNE.2015.7132030.

205. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon Spintronics";
NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 2015-04-13 - 2015-04-16; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45.

204. V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
"Silicon and CMOS-Compatible Spintronics";
Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 2015-03-15 - 2015-03-17; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), Vol.28, ISBN: 978-1-61804-286-6, 17 - 20.

203. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, .

202. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 2015-02-24 - 2015-02-27; in "Proceedings of 21st Iberchip Worshop", (2015), Vol.23, .

201. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829.

200. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

199. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"New Design of Spin-Torque Nano-Oscillators";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63.

198. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62.

197. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 2014-09-23 - 2014-09-25; in "Abstracts 2014", (2014), 78.

196. V. Sverdlov, D. Osintsev, S. Selberherr:
"Spin behaviour in strained silicon films";
Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 2014-09-15 - 2014-09-18; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) .

195. D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
"Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596.

194. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 297 - 300 doi:10.1109/SISPAD.2014.6931622.

193. D. Osintsev, V. Sverdlov, S. Selberherr:
"Valley degeneracy and spin lifetime enhancement in stressed silicon films";
Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 2014-07-28 - 2014-07-31; in "Book of Abstracts", (2014), 1.

192. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion in Silicon from a Ferromagnetic Contact";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 165.

191. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166.

190. V. Sverdlov, A. Makarov, S. Selberherr:
"Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 2014-07-06 - 2014-07-08; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19.

189. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26.

188. V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17.

187. V. Sverdlov, D. Osintsev, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456.

186. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Injection in Silicon: The Role of Screening Effects";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 63 - 64.

185. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60.

184. T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the 17th International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194.

183. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 2014-05-12 - 2014-05-14; in "Proceedings of the 29th International Conference on Microelectronics", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081.

182. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"High Performance MRAM-Based Stateful Logic";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 117 - 120 doi:10.1109/ULIS.2014.6813912.

181. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling of Spin-Based Silicon Technology";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891.

180. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 9 - 12 doi:10.1109/ULIS.2014.6813893.

179. A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 1 page(s) .

178. D. Osintsev, V. Sverdlov, S. Selberherr:
"Mobility and spin lifetime enhancement in thin silicon films by shear strain";
Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), Vol.59/1, 1 page(s) .

177. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 - 2014-02-28; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89.

176. D. Osintsev, V. Sverdlov, S. Selberherr:
"Increasing mobility and spin lifetime with shear strain in thin silicon films";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

175. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
8813, SPIE Digital Library, in "Proceedings of SPIE", (2013), ISBN: 978-0-8194-9728-4, 88132Q1 - 88132Q9 doi:10.1117/12.2025568.

174. A. Makarov, V. Sverdlov, S. Selberherr:
"Fast Switching STT-MRAM Cells for Future Universal Memory";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 2013-12-17 - 2013-12-20; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) .

173. J. Ghosh, V. Sverdlov, S. Selberherr:
"Influence of a Space Charge Region on Spin Transport in Semiconductor";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 2013-12-11 - 2013-12-13; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3, 27.

172. A. Makarov, V. Sverdlov, S. Selberherr:
"Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

171. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement in Strained Thin Silicon Films";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013), 2 page(s) .

170. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714.

169. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457.

168. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 2013-11-01 - 2013-11-02; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7.

167. A. Makarov, V. Sverdlov, S. Selberherr:
"Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797.

166. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 - 2013-09-20; in "Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886.

165. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 163 - 166 doi:10.1109/SISPAD.2013.6650600.

164. D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618.

163. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 368 - 371 doi:10.1109/SISPAD.2013.6650651.

162. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration";
Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208.

161. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69.

160. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101.

159. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: Conf. on Spintronics (SPINTRONICS), San Diego, USA; (invited) 2013-08-25 - 2013-08-29; in "Proceedings of SPIE", (2013), Vol.8813, ISBN: 978-0-8194-9728-4, 88132Q1-2Q9 doi:10.1117/12.2025568.

158. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Non-Volatile Magnetic Flip Flop";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 2013-07-29 - 2013-08-02; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 page(s) .

157. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications";
Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 2013-07-17 - 2013-07-19; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5, 1 page(s) .

156. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications";
Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8, 2 page(s) doi:10.1109/NanoArch.2013.6623033.

155. A. Makarov, V. Sverdlov, S. Selberherr:
"Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165.

154. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272.

153. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel MTJ-Based Shift Register for Non-Volatile Logic Applications";
Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 36 - 37 doi:10.1109/NanoArch.2013.6623038.

152. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Design and Applications of Magnetic Tunnel Junction Based Logic Circuits";
Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 2013-06-24 - 2013-06-27; in "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4, 157 - 160 doi:10.1109/PRIME.2013.6603122.

151. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339.

150. D. Osintsev, V. Sverdlov, S. Selberherr:
"Calculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70.

149. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates";
Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 244 - 245.

148. A. Makarov, V. Sverdlov, S. Selberherr:
"Structural Optimization of MTJs with a Composite Free Layer";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75.

147. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77.

146. V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Devices in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71.

145. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the 16th International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239.

144. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in "223th ECS Meeting", (2013), Vol.894, ISBN: 978-1-56677-866-4, 1.

143. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates";
Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 68 - 69.

142. D. Osintsev, V. Sverdlov, S. Selberherr:
"Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65.

141. V. Sverdlov, S. Selberherr:
"Silicon Spintronics and its Applications";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; (invited) 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 51 - 52.

140. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of the valley degeneracy on spin relaxation in thin silicon films";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525.

139. D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhanced intervalley splitting and reduced spin relaxation in strained thin silicon films";
Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) .

138. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), Vol.46, 1 page(s) .

137. A. Makarov, V. Sverdlov, S. Selberherr:
"Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21.

136. D. Osintsev, V. Sverdlov, S. Selberherr:
"Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 33.

135. V. Sverdlov, A. Makarov, S. Selberherr:
"Fast Switching in MTJs with a Composite Free Layer";
Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291.

134. T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Fully Electrically Read- Write Magneto Logic Gates";
Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in "Book of Abstracts", (2012), 1 page(s) .

133. A. Makarov, V. Sverdlov, S. Selberherr:
"High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer";
Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 2012-09-25 - 2012-09-27; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) .

132. D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spintronic Effects in Silicon";
Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 2012-09-24 - 2012-09-28; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) .

131. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 - 2012-09-21; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162.

130. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 2012-09-17 - 2012-09-21; in "Proceedings of the 42th European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2, 254 - 257 doi:10.1109/ESSDERC.2012.6343381.

129. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 225 - 228.

128. A. Makarov, V. Sverdlov, S. Selberherr:
"Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232.

127. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156.

126. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-6.

125. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-27.

124. D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
"Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), Vol.1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413.

123. A. Makarov, V. Sverdlov, S. Selberherr:
"STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4.

122. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3.

121. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3.

120. V. Sverdlov, S. Selberherr:
"MOSFET and Spin Transistor Simulations";
Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; in "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 page(s) .

119. A. Makarov, V. Sverdlov, S. Selberherr:
"Reduction of the Switching Current in Spin Transfer Torque Random Access Memory";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 2012-06-25 - 2012-06-29; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49.

118. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Memristive Charge- and Flux-Based Sensors";
Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 2012-06-12 - 2012-06-15; in "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9, 4 page(s) .

117. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"State Drift Optimization of Memristive Stateful IMP Logic Gates";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 243 - 244.

116. A. Makarov, V. Sverdlov, S. Selberherr:
"Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226.

115. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the 15th International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230.

114. A. Makarov, V. Sverdlov, S. Selberherr:
"Recent Developments in Advanced Memory Modeling";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings of the 28th International Conference on Microelectronics", (2012), ISBN: 978-1-4673-0235-7, 49 - 52.

113. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements";
Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 2012-04-29 - 2012-05-04; in "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 page(s) .

112. A. Makarov, S. Selberherr, V. Sverdlov:
"Emerging Non-Volatile Memories for Ultra-Low Power Applications";
Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 2012-04-23 - 2012-04-24; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24.

111. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling Emerging Non-Volatile Memories: Current Trends and Challenges";
Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 2012-04-01 - 2012-04-02; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056.

110. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 2012-03-14 - 2012-03-17; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887.

109. V. Sverdlov, A. Makarov, S. Selberherr:
"Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer";
Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) .

108. D. Osintsev, V. Sverdlov, S. Selberherr:
"Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78.

107. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

106. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

105. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) .

104. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

103. D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
"An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 page(s) .

102. A. Makarov, S. Selberherr, V. Sverdlov:
"Modeling of Advanced Memories";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568.

101. A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
"Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181.

100. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) .

99. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444.

98. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049.

97. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189.

96. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238.

95. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229.

94. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

93. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) .

92. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64.

91. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in "219th ECS Meeting", (2011), Vol.Vol.35, No.5, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806.

90. Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement";
Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in "219th ECS Meeting", (2011), Vol.Vol.35, No.5, ISBN: 978-1-56677-866-4, 117 - 122 doi:10.1149/1.3570785.

89. A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr:
"Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method";
Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 2011-03-28 - 2011-04-01; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) .

88. D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
"Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), .

87. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998.

86. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60.

85. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100.

84. V. Sverdlov, S. Selberherr:
"Strain Engineering Techniques: A Rigorous Physical Review";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-05.

83. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-06.

82. M. Pourfath, V. Sverdlov, S. Selberherr:
"Transport Modeling for Nanoscale Semiconductor Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2010-11-01 - 2010-11-04; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), Vol.4, ISBN: 978-1-4244-5799-1, 1737 - 1740.

81. V. Sverdlov, S. Selberherr:
"Modeling of Modern MOSFETs with Strain";
Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina; (invited) 2010-11-01 - 2010-11-03; in "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3, 1 - 11.

80. A. Makarov, V. Sverdlov, S. Selberherr:
"A Monte Carlo Simulation of Reproducible Hysteresis in RRAM";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934.

79. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
"Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 5 - 8 doi:10.1109/IWCE.2010.5677927.

78. A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr:
"First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory";
Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186.

77. A. Makarov, V. Sverdlov, S. Selberherr:
"Monte Carlo Simulation of Bipolar Resistive Switching Memories";
Talk: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22.

76. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Enhanced Valley Splitting in Silicon Nanowires and Point Contacts";
Poster: Nanoelectronics Days 2010, Aachen, Germany; 2010-10-04 - 2010-10-07; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 118.

75. A. Makarov, V. Sverdlov, S. Selberherr:
"A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory";
Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399.

74. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517.

73. A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39.

72. V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr:
"Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices";
Talk: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 2010-08-01 - 2010-08-04; in "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274.

71. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312.

70. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 141.

69. M. Pourfath, V. Sverdlov, S. Selberherr:
"Modeling Demands for Nanoscale Devices";
Talk: Device Research Conference, South Bend; (invited) 2010-06-21 - 2010-06-23; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214.

68. V. Sverdlov, S. Selberherr:
"Modeling Floating Body Z-RAM Storage Cells";
Talk: 27th International Conference on Microelectronics (MIEL 2010), Nis; (invited) 2010-05-16 - 2010-05-19; in "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0, 45 - 50.

67. V. Sverdlov, S. Selberherr:
"Scalability of a Second Generation Z-RAM Cell: A Computational Study";
Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 2010-03-28 - 2010-04-01; in "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9, 232 - 247.

66. Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina:
"Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 2010-03-18 - 2010-03-19; in "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72.

65. V. Sverdlov, O. Baumgartner, S. Selberherr:
"Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films";
Talk: APS March Meeting, Portland; 2010-03-15 - 2010-03-19; in "Bulletin American Physical Society (APS March Meeting 2010)", (2010), Vol.49/2, B9.00001.

64. O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2010-01-25 - 2010-01-27; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92.

63. V. Sverdlov, O. Baumgartner, S. Selberherr:
"Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band";
Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 2009-12-09 - 2009-12-11; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1, TP6-03.1 - 2.

62. V. Sverdlov, S. Selberherr:
"Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach";
Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), Vol.21, ISBN: 978-3-90188-237-1, 4 page(s) .

61. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), .

60. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling Techniques for Strained CMOS Technology";
Talk: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna; (invited) 2009-10-04 - 2009-10-09; in "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5, 3 - 18.

59. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the 14th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252.

58. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396.

57. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr:
"Mobility Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts";
Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 2009-07-07 - 2009-07-11; in "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301.

56. V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr:
"Subband Structure in Ultra-Thin Silicon Films";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63.

55. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 2009-06-14 - 2009-06-19; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58.

54. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films";
Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 2009-06-13 - 2009-06-14; in "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96.

53. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93.

52. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131.

51. V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni:
"The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158.

50. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156.

49. T. Windbacher, V. Sverdlov, S. Selberherr:
"Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)";
Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the 13th International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 169 - 172 doi:10.1109/IWCE.2009.5091122.

48. V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance";
Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "215th ECS Meeting", (2009), Vol.19/4, ISBN: 978-1-56677-712-4, 15 - 26.

47. S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
"Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "2009 IEEE International Reliability Physics Symposium Proceedings", (2009), 514 - 522.

46. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), .

45. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84.

44. V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr:
"Valley Splitting in Thin Silicon Films from a Two-Band k·p Model";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 2009-03-18 - 2009-03-20; in "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280.

43. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58.

42. V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr:
"Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82.

41. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive Biofets";
Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 2009-01-14 - 2009-01-17; in "Final Program and Book of Abstracts", (2009), 42.

40. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive BioFETs";
Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 2009-01-14 - 2009-01-17; in "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2, 24 - 30.

39. V. Sverdlov, S. Selberherr:
"Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells";
Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 2008-10-27 - 2008-10-29; in "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1, 380 - 384.

38. S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure:
"Ultra-Scaled Z-RAM Cell";
Talk: 2008 IEEE International SOI Conference, New Paltz; 2008-10-06 - 2008-10-09; in "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8, 157 - 158.

37. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger:
"A General Bottom-Up Modeling Approach for BioFETs";
Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 2008-09-29 - 2008-09-30; in "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008), .

36. V. Sverdlov, T. Windbacher, S. Selberherr:
"Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 145 - 148 doi:10.1109/SISPAD.2008.4648258.

35. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Simulation of Field-Effect Biosensors (BioFETs)";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the 13th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 193 - 196 doi:10.1109/SISPAD.2008.4648270.

34. V. Sverdlov, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 159 - 168.

33. T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes";
Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 2008-07-27 - 2008-08-01; in "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7, 507 - 508.

32. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254.

31. M. Pourfath, V. Sverdlov, H. Kosina:
"On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors";
Talk: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 2008-06-29 - 2008-07-03; in "1st Fone Conference Nanoelectronics 2008", (2008), 41.

30. V. Sverdlov, S. Selberherr:
"Strain-Controlled Valley Splitting in Si-SiGe Heterostructures";
Talk: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 2008-05-11 - 2008-05-14; in "Abstract Book", (2008), 20 - 21.

29. V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr:
"Stress-Induced Valley Splitting in Silicon Thin Films";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 2008-03-12 - 2008-03-14; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96.

28. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 2008-01-23 - 2008-01-25; in "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42.

27. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) .

26. V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon";
Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224.

25. V. Sverdlov, H. Kosina:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the 12th International Workshop on Computational Electronics (IWCE)", (2007), 92 - 93.

24. V. Sverdlov, H. Kosina, S. Selberherr:
"Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 2007-10-01 - 2007-10-05; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), Vol.O1-14, .

23. V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina:
"Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), Vol.12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79.

22. V. Sverdlov:
"Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures";
Talk: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 2007-09-23 - 2007-09-28; in "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), 63 - 64.

21. V. Sverdlov, H. Kosina, S. Selberherr:
"Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model";
Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 2007-09-19 - 2007-09-21; in "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) .

20. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "European Solid-State Device Research Conference", (2007), ISBN: 1-4244-1124-6, 386 - 389.

19. T. Grasser, W. Gös, V. Sverdlov, B. Kaczer:
"The Universality of NBTI Relaxation and its Implications for Modeling and Characterization";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2007-04-15 - 2007-04-19; in "45th Annual International Reliability Physics Symposium", (2007), ISBN: 1-4244-0919-5, 268 - 280.

18. V. Sverdlov, E. Ungersböck, H. Kosina:
"Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 2007-01-24 - 2007-01-26; in "EUROSOI 2007", (2007), 39 - 40.

17. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) .

16. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain Engineering for CMOS Devices";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2006-10-23 - 2006-10-26; in "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127.

15. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 2006-10-15 - 2006-10-19; in "NATO Advanced Research Workshop Conference Abstracts", (2006), 77 - 78.

14. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-18 - 2006-09-22; in "Proceedings of the 36th European Solid-State Device Research Conference", (2006), ISBN: 1-4244-0301-4, 178 - 181.

13. H. Kosina, V. Sverdlov, T. Grasser:
"Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908.

12. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the 11th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834.

11. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 2006-08-28 - 2006-09-01; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216.

10. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations";
Talk: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18.

9. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30.

8. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Flow in Upcoming Microelectronic Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8.

7. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2006-03-08 - 2006-03-10; in "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), 133 - 134.

6. V. Sverdlov, H. Kosina, S. Selberherr:
"Current Transport in Nanoelectronic Semiconductor Devices";
Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 2006-01-10 - 2006-01-13; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495.

5. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field Effect Transistors";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2005-12-19 - 2005-12-21; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390.

4. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of ESSDERC 2005", (2005), Vol.CDROM ISBN: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96.

3. H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37.

2. V. Sverdlov:
"Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays";
Talk: International Conference on Unsolved Problems of Noise (UPON), Gallipoli; (invited) 2005-06-06 - 2005-06-10; in "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), 177 - 182.

1. A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 2005-01-19 - 2005-01-21; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72.


Talks and Poster Presentations (without Proceedings-Entry)


5. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization";
Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 2015-08-31 - 2015-09-01; .

4. V. Sverdlov, D. Osintsev, S. Selberherr:
"From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; (invited) 2014-01-27 - 2014-01-29; .

3. H. Kosina, V. Sverdlov:
"Impact of Strain and Defects on CMOS Process and Device Performance";
Talk: 15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece; (invited) 2007-06-20 - 2007-06-23; .

2. Y. Kinkhabwala, V. Sverdlov, K. Likharev:
"Quasi-continuous Charge Transfer via 2D Hopping";
Talk: APS March Meeting, Los Angeles; 2005-03-21 - 2005-03-25; .

1. V. Sverdlov, H. Kosina, Ch. Ringhofer, M Nedjalkov, S. Selberherr:
"Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm";
Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; 2004-11-04 - 2004-11-05; .


Habilitation Theses


1. V. Sverdlov:
"Strain-Induced Effects in Advanced MOSFETs";
Technische Universität Wien/Fakultät für Elektrotechnik und Informationstechnik, (2010), .


Doctor's Theses (authored and supervised)


4. J. Ghosh:
"Modeling Spin-Dependent Transport in Silicon";
Reviewer: V. Sverdlov, M. Bescond; E360, 2016, oral examination: 2016-03-03.

3. D. Osintsev:
"Modeling Spintronic Effects in Silicon";
Reviewer: V. Sverdlov, D. Süss; E360, 2014, oral examination: 2014-05-28.

2. H. Mahmoudi:
"Devices and Circuits for Stateful Logic and Memristive Sensing Applications";
Reviewer: V. Sverdlov, B. Meinerzhagen; E360, 2014, oral examination: 2014-04-28.

1. A. Makarov:
"Modeling of Emerging Resistive Switching Based Memory Cells";
Reviewer: V. Sverdlov, S. Cristoloveanu; E360, 2014, oral examination: 2014-03-18.


Scientific Reports


3. H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr:
"VISTA Status Report I";
(2009), 30 page(s) .

2. O. Baumgartner, W. Gös, A. Nentchev, F. Stimpfl, V. Sverdlov, S. Selberherr:
"VISTA Status Report II";
(2007), 32 page(s) .

1. S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr:
"VISTA Status Report I";
(2006), 32 page(s) .


Patents


4. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Spin Torque Magnetic Integrated Circuit";
Patent: International, No. Wo 2014/154497 A1; Patent priority number EP 13161375.4; submitted: 2014-03-13, granted: 2014-10-02.

3. T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Spin Torque Magnetic Integrated Circuit";
Patent: Europe, No. Ep 2784 020 A1; submitted: 2013-03-27, granted: 2014-10-01.

2. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"RRAM Implication Logic Gates";
Patent: International, No. Wo 2014/079747 A1; Patent priority number EP 12193826.0; submitted: 2013-11-13, .

1. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"RRAM Implication Logic Gates";
Patent: Europe, No. Ep 2 736 044 A1; submitted: 2012-11-22, .