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Publication list for
Michael Waltl
as author or essentially involved person

38 records


Publications in Scientific Journals


9. Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials, 4, (2017), 1 - 10 doi:10.1088/2053-1583/aa734a.

8. R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
"Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367.

7. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086.

6. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part II: Theory";
IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454.

5. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004.

4. Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814.

3. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03.

2. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010.

1. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
"NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578.


Talks and Poster Presentations (with Proceedings-Entry)


26. Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
"A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90.

25. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
"Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209.

24. Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
"Temperature-dependent Hysteresis in Black Phosphorus FETs";
Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), .

23. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504.

22. Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the 2016 IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543.

21. M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
"Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of IRPS 2016", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644.

20. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2015), 535 - 538.

19. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651.

18. Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the 2015 45th European Solid State Device Research Conference", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741.

17. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
"Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279.

16. B. Ullmann, M. Waltl, T. Grasser:
"Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 2015-06-25 - 2015-06-26; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37.

15. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739.

14. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834.

13. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) .

12. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778.

11. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093.

10. W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567.

9. T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös:
"Evidence for Defect Pairs in SiON pMOSFETs";
Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 262 - 267.

8. T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
"A unified perspective of RTN and BTI";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7.

7. M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser:
"A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Conference Proceedings of International Reliability Physics Symposium", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5.

6. T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G. Rott, H. Reisinger, J. Franco, B. Kaczer:
"Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620.

5. T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer:
"Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "2013 International Electron Devices Meeting (IEDM) Technical Digest", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637.

4. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer:
"Recent Advances in Understanding Oxide Traps in pMOS Transistors";
Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96.

3. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, Bened. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser:
"Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

2. T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer:
"Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6.

1. M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser:
"Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79.


Doctor's Theses (authored and supervised)


1. M. Waltl:
"Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
Reviewer: T. Grasser, D. Schmitt-Landsiedel; E360, 2016, oral examination: 2016-09-09.


Diploma and Master Theses (authored and supervised)


2. M. Huymajer:
"Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS";
Supervisor: T. Grasser, M. Waltl; E360, 2016, final examination: 2016-06-16.

1. M. Waltl:
"Change Point Detection in Time Dependent Defect Spectroscopy Data";
Supervisor: T. Grasser, P.-J. Wagner; E360, 2011, final examination: 2011-11-25.