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Publication list for
Yannick Wimmer
as author or essentially involved person

27 records


Publications in Scientific Journals


8. P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014.

7. Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
"Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices";
Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009.

6. A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
"Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107.

5. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282.

4. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021.

3. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
"On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18.

2. M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575.

1. S. E. Tyaginov, Y. Wimmer, T. Grasser:
"Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T.


Talks and Poster Presentations (with Proceedings-Entry)


17. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504.

16. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2015), 535 - 538.

15. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60.

14. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254.

13. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts 18th International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98.

12. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471.

11. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739.

10. B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
"Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706.

9. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763.

8. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093.

7. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
"Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512.

6. Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511.

5. W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567.

4. K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser:
"Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639.

3. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570.

2. F. Rudolf, Y. Wimmer, J. Weinbub, K. Rupp, S. Selberherr:
"Mesh Generation Using Dynamic Sizing Functions";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2014-06-15 - 2014-06-20; in "Proc. 4th European Seminar on Computing", (2014), 191.

1. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), ISBN: 978-1-4799-0350-4, 98 - 101.


Diploma and Master Theses (authored and supervised)


2. M. Bellini:
"Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide";
Supervisor: T. Grasser, M. Jech, Y. Wimmer; 2017, 2017, final examination: 2017-03-09.

1. Y. Wimmer:
"Untersuchung neuartiger SiNx-Antireflexschichten für Silizium-Solarzellen";
Supervisor: J. Summhammer; Atominstitut, 2012, final examination: 2012-06-01.