TU Home


Publication Database Home

Publication list for members of
E360 - Institute for Microelectronics
as any persons named in the publication record

records


Publications in Scientific Journals


610. E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger:
"Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy";
IEEE Transactions on Nanotechnology, 16, (2017), 245 - 252 doi:10.1109/TNANO.2017.2657888.

609. B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
"Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872.

608. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
Solid-State Electronics, 128, (invited) (2017), 141 - 147 doi:10.1016/j.sse.2016.10.029.

607. C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
"Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs";
Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231.

606. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032.

605. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086.

604. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part II: Theory";
IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454.

603. N.S. Azar, M. Pourfath:
"Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents";
The Journal of Physical Chemistry C, 120, (2016), 16804 - 16814 doi:10.1021/acs.jpcc.6b05318.

602. Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez:
"Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness";
Journal of Applied Physics, 120, (2016), 053904-1 - 053904-5 doi:10.1063/1.4960354.

601. L. Filipovic, S. Selberherr:
"Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
IEEE Transactions on Device and Materials Reliability, 16, (2016), 483 - 495 doi:10.1109/TDMR.2016.2625461.

600. L. Filipovic, S. Selberherr:
"Stress in Three-Dimensionally Integrated Sensor Systems";
Microelectronics Reliability, 61, (2016), 3 - 10 doi:10.1016/j.microrel.2015.09.013.

599. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34.

598. M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein:
"Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures";
Nano Letters, 16, (2016), 3507 - 3518 doi:10.1021/acs.nanolett.6b00315.

597. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004.

596. Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814.

595. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03.

594. M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
"On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14.

593. X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
"Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032.

592. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010.

591. A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"CMOS-Compatible Spintronic Devices: A Review";
Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006.

590. S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
"The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO2 Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study";
Journal of Applied Physics, 114, (2016), 144302-1 - 1444302-9 doi:10.1063/1.4945392.

589. N. Neophytou, M. Thesberg:
"Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor";
Journal of Computational Electronics, 15, (invited) (2016), 16 - 26 doi:10.1007/s10825-016-0792-7.

588. S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution During Nanoindentation in Open TSVs";
IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727.

587. M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee:
"Electronic Properties of Dislocations";
Solid State Phenomena, 242, (2016), 141 - 146 doi:10.4028/www.scientific.net/SSP.242.141.

586. G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481.

585. K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
"A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z.

584. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
"ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419.

583. K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
"Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
ACM Transactions on Mathematical Software, 43, (2016), 11:1 - 11:27 doi:10.1145/2907944.

582. P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014.

581. V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688.

580. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach";
Journal of Electronic Materials, 45, (2016), 1584 - 1588 doi:10.1007/s11664-015-4124-7.

579. S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
"Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs";
IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920.

578. M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov:
"Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures";
Technical Physics Letters, 42, (2016), 1090 - 1093 doi:10.1134/S1063785016110109.

577. J. Weinbub, A. Hössinger:
"Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method";
Procedia Computer Science, 80, (2016), 2271 - 2275 doi:10.1016/j.procs.2016.05.408.

576. Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
"Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices";
Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009.

575. M. Zeraati, S.M.V. Allaei, I.A. Sarsari, M. Pourfath, D. Donadio:
"Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study";
Physical Review B, 93, (2016), 085424-1 - 085424-6 doi:10.1103/PhysRevB.93.085424.

574. M. Asad, S. Salimian, M. Sheikhi, M. Pourfath:
"Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS2 Nanoparticles";
Sensors and Actuators A: Physical, 232, (2015), 285 - 291 doi:10.1016/j.sna.2015.06.018.

573. M. Asad, M. Sheikhi, M. Pourfath, M. Moradi:
"High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs";
Sensors and Actuators B: Chemical, 210, (2015), 1 - 8 doi:10.1016/j.snb.2014.12.086.

572. A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
"Investigation of Novel Silicon PV Cells of a Lateral Type";
Silicon, 7, (2015), 283 - 291 doi:10.1007/s12633-014-9227-x.

571. E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Lacerda de Orio, S. Selberherr:
"Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
Microelectronic Engineering, 137, (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014.

570. R. Coppeta, D. Holec, H. Ceric, T. Grasser:
"Evaluation of Dislocation Energy in Thin Films";
Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573.

569. I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Boundary Conditions and the Wigner Equation Solution";
Journal of Computational Electronics, 14, (2015), 859 - 863 doi:10.1007/s10825-015-0720-2.

568. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hole trapping at hydrogenic defects in amorphous silicon dioxide";
Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073.

567. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503.

566. A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
"Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107.

565. M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari:
"Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain";
Physical Review B, 91, (2015), 1154121 - 1154128 doi:10.1103/PhysRevB.91.115412.

564. P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov:
"Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition";
Journal of Computational Electronics, 14, (2015), 151 - 162 doi:10.1007/s10825-014-0635-3.

563. L. Filipovic, S. Selberherr:
"Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors";
Sensors, 15, (2015), 7206 - 7227 doi:10.3390/s150407206.

562. L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
"Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
Microelectronics Reliability, 55, (2015), 1843 - 1848 doi:10.1016/j.microrel.2015.06.014.

561. N. Ghobadi, M. Pourfath:
"Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing";
IEEE Electron Device Letters, 36, (2015), 280 - 282 doi:10.1109/LED.2014.2388452.

560. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072.

559. M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Strain Induced Mobility Modulation in Single-Layer MoS2";
Journal of Physics D: Applied Physics, 48, (2015), 375104-1 - 375104-11 doi:10.1088/0022-3727/48/37/375104.

558. M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( M = Mo, W ; X = S , Se)";
IEEE Transactions on Electron Devices, 62, (2015), 3192 - 3198 doi:10.1109/TED.2015.2461617.

557. M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
"Very Large Strain Gauges Based on Single Layer MoSe2 and WSe2 for Sensing Applications";
Applied Physics Letters, 107, (2015), 253503-1 - 253503-4 doi:10.1063/1.4937438.

556. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
"Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433.

555. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704.

554. Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
"TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015.

553. B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
"Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
IEEE Electron Device Letters, 36, (2015), 300 - 302 doi:10.1109/LED.2015.2404293.

552. H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou:
"Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons";
Physical Review B, 91, (2015), 165410-1 - 165410-15 doi:10.1103/PhysRevB.91.165410.

551. M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"Numerical Study of Graphene Superlattice-Based Photodetectors";
IEEE Transactions on Electron Devices, 62, (2015), 593 - 600 doi:10.1109/TED.2014.2383354.

550. M. Moradinasab, M. Pourfath, H. Kosina:
"Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
IEEE Journal of Quantum Electronics, 51, (2015), 1 - 7 doi:10.1109/JQE.2014.2373171.

549. S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
"On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals";
Journal of Applied Physics, 118, (2015), 205303-1 - 205303--6 doi:10.1063/1.4936310.

548. M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
"The Wigner Equation in the Presence of Electromagnetic Potentials";
Journal of Computational Electronics, 14, (2015), 888 - 893 doi:10.1007/s10825-015-0732-y.

547. N. Neophytou, H. Karamitaheri, H. Kosina:
"Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study";
Journal of Electronic Materials, 44, (2015), 1599 - 1605 doi:10.1007/s11664-014-3488-4.

546. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007.

545. V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin:
"Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs";
Applied Physics Letters, 106, (2015), 183505-1 - 183505-5 doi:10.1063/1.4921006.

544. F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr:
"Transformation Invariant Local Element Size Specification";
Applied Mathematics and Computation, 267, (2015), 195 - 206 doi:10.1016/j.amc.2015.04.027.

543. N. Sefidmooye Azar, M. Pourfath:
"A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites";
IEEE Transactions on Electron Devices, 62, (2015), 1584 - 1589 doi:10.1109/TED.2015.2411992.

542. J. M. Sellier, M. Nedjalkov, I. Dimov:
"An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism";
Physics Reports, 577, (2015), 1 - 34 doi:10.1016/j.physrep.2015.03.001.

541. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"A Comparison of Approaches for the Solution of the Wigner Equation";
Mathematics and Computers in Simulation, 107, (2015), 108 - 119 doi:10.1016/j.matcom.2014.06.001.

540. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282.

539. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021.

538. Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause:
"Consistent Low-Field Mobility Modeling for Advanced MOS Devices";
Solid-State Electronics, 112, (2015), 37 - 45 doi:10.1016/j.sse.2015.02.008.

537. V. Sverdlov, S. Selberherr:
"Silicon Spintronics: Progress and Challenges";
Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002.

536. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices";
Journal of Applied Physics, 118, (2015), 224301-1 - 224301-6 doi:10.1063/1.4936839.

535. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
"On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18.

534. M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser:
"Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207.

533. L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs";
IEEE Transactions on Electron Devices, 62, (2015), 2106­ - 2112 doi:10.1109/TED.2015.2436351.

532. J. Weinbub, P. Ellinghaus, M. Nedjalkov:
"Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
Journal of Computational Electronics, 14, (2015), 922 - 929 doi:10.1007/s10825-015-0730-0.

531. J. Weinbub, M. Wastl, K. Rupp, F. Rudolf, S. Selberherr:
"ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering";
Applied Mathematics and Computation, 267, (2015), 282 - 293 doi:10.1016/j.amc.2015.03.094.

530. T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
"Modelling of multipurpose spintronic devices";
International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215.

529. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023.

528. S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov:
"Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues";
IEEE Transactions on Electron Devices, 61, (2014), 1292 - 1298 doi:10.1109/TED.2014.2312820.

527. M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath:
"High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles";
Sensors and Actuators A: Physical, 220, (2014), 213 - 220 doi:10.1016/j.sna.2014.10.017.

526. M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575.

525. V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
"Circuit simulation of workload-dependent RTN and BTI based on trap kinetics";
Microelectronics Reliability, 54, (2014), 2364 - 2370.

524. H. Ceric, R. Lacerda de Orio, W. H. Zisser, S. Selberherr:
"Microstructural Impact on Electromigration: A TCAD Study";
Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C.

523. N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath:
"A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 61, (2014), 23 - 29 doi:10.1109/TED.2013.2290773.

522. L. Filipovic, S. Selberherr:
"The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
Microelectronics Reliability, 54, (2014), 1953 - 1958 doi:10.1016/j.microrel.2014.07.014.

521. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
"Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques";
Microelectronic Engineering, 117, (2014), 57 - 66 doi:10.1016/j.mee.2013.12.025.

520. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications";
IEEE Transactions on Semiconductor Manufacturing, 27, (2014), 269 - 277 doi:10.1109/TSM.2014.2298883.

519. N. Ghobadi, M. Pourfath:
"A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures";
IEEE Transactions on Electron Devices, 61, (2014), 186 - 192 doi:10.1109/TED.2013.2291788.

518. N. Ghobadi, M. Pourfath:
"On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors";
Journal of Applied Physics, 116, (2014), 1845061 - 1845067 doi:10.1063/1.4901584.

517. M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath:
"Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design";
IEEE Transactions on Electron Devices, 61, (2014), 4000 - 4006 doi:10.1109/TED.2014.2362774.

516. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056.

515. J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
"Spin Injection in a Semiconductor Through a Space-Charge Layer";
Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035.

514. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
"NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578.

513. Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
"An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs";
Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22.

512. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
Applied Physics Letters, 105, (2014), 1435071 - 1435075.

511. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
"Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes";
Journal of Applied Physics, 115, (2014), 223706-1 - 223706-5 doi:10.1063/1.4882375.

510. H. Karamitaheri, N. Neophytou, H. Kosina:
"Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires";
Journal of Applied Physics, 115, (2014), 024302_1 - 024302_7 doi:10.1063/1.4858375.

509. J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl:
"Self-Heating in GaN Transistors Designed for High-Power Operation";
IEEE Transactions on Electron Devices, 61, (2014), 3429 - 3434 doi:10.1109/TED.2014.2350516.

508. B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
"Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids";
Journal of Electronic Materials, 43, (2014), 3812 - 3816 doi:10.1007/s11664-014-3170-x.

507. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89.

506. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141.

505. A. Mojibpour, M. Pourfath, H. Kosina:
"Optimization study of third harmonic generation in quantum cascade lasers";
Optics Express, 22, (2014), 20607 - 20612 doi:10.1364/OE.22.020607.

504. M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski:
"Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors";
Applied Surface Science, 312, (2014), 157 - 161 doi:10.1016/j.apsusc.2014.04.078.

503. D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano:
"Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys";
Physica Status Solidi A, 211, (2014), 1255 - 1258 doi:10.1002/pssa.201300130.

502. N. Neophytou, H. Kosina:
"Gated Si nanowires for large thermoelectric power factors";
Applied Physics Letters, 105, (2014), 073119-1 - 5 doi:10.1063/1.4893977.

501. D. Osintsev, V. Sverdlov, S. Selberherr:
"Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29.

500. G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959.

499. P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"Diagonal-transition quantum cascade detector";
Applied Physics Letters, 105, (2014), 1 - 4 doi:10.1063/1.4894767.

498. G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
"Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors";
Microelectronics Reliability, 54, (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040.

497. F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr:
"The Meshing Framework ViennaMesh for Finite Element Applications";
Journal of Computational and Applied Mathematics, 270, (2014), 166 - 177 doi:10.1016/j.cam.2014.02.005.

496. K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Proceedings in Applied Mathematics and Mechanics, 14, (2014), 963 - 964 doi:10.1002/pamm.201410462.

495. J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov:
"Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches";
Physica A: Statistical Mechanics and its Applications, 398, (2014), 194 - 198 doi:10.1016/j.physa.2013.12.045.

494. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"A Benchmark Study of the Wigner Monte Carlo Method";
Monte Carlo Methods and Applications, 20, (2014), 43 - 51 doi:10.1515/mcma-2013-0018.

493. S. Soleimani Kahnoj, S. Touski, M. Pourfath:
"The effect of electron-electron interaction induced dephasing on electronic transport in graphene nanoribbons";
Applied Physics Letters, 105, (2014), 1035021 - 1035024 doi:10.1063/1.4894859.

492. M. Tapajna, N. Killat, V. Palankovski, D. Gregusova, K. Cico, J. Carlin, N. Grandjean, M. Kuball, J. Kuzmik:
"Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors";
IEEE Transactions on Electron Devices, 61, (2014), 2793 - 2801 doi:10.1109/TED.2014.2332235.

491. S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
"Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric";
Journal of Computational Electronics, 1, (2014), 1 - 6 doi:10.1007/s10825-014-0593-9.

490. S. E. Tyaginov, Y. Wimmer, T. Grasser:
"Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T.

489. J. Weinbub, A. Hössinger:
"Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method";
Journal of Computational Electronics, 13, (2014), 877 - 884 doi:10.1007/s10825-014-0604-x.

488. J. Weinbub, K. Rupp, S. Selberherr:
"Highly Flexible and Reusable Finite Element Simulations with ViennaX";
Journal of Computational and Applied Mathematics, 270, (2014), 484 - 495 doi:10.1016/j.cam.2013.12.013.

487. J. Weinbub, K. Rupp, S. Selberherr:
"ViennaX: A Parallel Plugin Execution Framework for Scientific Computing";
Engineering with Computers, 30, (2014), 651 - 668 doi:10.1007/s00366-013-0314-1.

486. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Novel Bias-Field-Free Spin Transfer Oscillator";
Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936.

485. S. Wolf, N. Neophytou, H. Kosina:
"Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness";
Journal of Applied Physics, 115, (2014), 204306 - 204313 doi:10.1063/1.4879242.

484. S. Wolf, N. Neophytou, Z. Stanojevic, H. Kosina:
"Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes";
Journal of Electronic Materials, 43, (2014), 3870 - 3875 doi:10.1007/S11664-014-3324-X.

483. W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
"Electromigration Reliability of Open TSV Structures";
Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099.

482. T. Aichinger, M. Nelhiebel, T. Grasser:
"Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures";
Microelectronics Reliability, 53, (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007.

481. O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina:
"VSP-a quantum-electronic simulation framework";
Journal of Computational Electronics, 12, (2013), 701 - 721 doi:10.1007/s10825-013-0535-y.

480. V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
"Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP, (2013), doi:10.1109/TVLSI.2013.2240323.

479. D. Demidov, K. Ahnert, K. Rupp, P. Gottschling:
"Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries";
SIAM Journal on Scientific Computing, 35, (2013), 453 - 472 doi:10.1137/120903683.

478. L. Filipovic, S. Selberherr:
"A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework";
Microelectronic Engineering, 107, (2013), 23 - 32 doi:10.1016/j.mee.2013.02.083.

477. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework";
Engineering Letters, 21, (invited) (2013), 224 - 240.

476. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
"NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
IEEE Transactions on Device and Materials Reliability, 13, (invited) (2013), 497 - 506 doi:10.1109/TDMR.2013.2281731.

475. J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI";
IEEE Transactions on Electron Devices, 60, (2013), 396 - 404 doi:10.1109/TED.2012.2225625.

474. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken:
"Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs";
Microelectronic Engineering, 109, (2013), 250 - 256 doi:10.1016/j.mee.2013.03.001.

473. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues";
IEEE Transactions on Electron Devices, 60, (2013), 405 - 412.

472. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
"Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2 nm) fluoride layer";
Thin Solid Films, 545, (2013), 580 - 583 doi:10.1016/j.tsf.2013.07.050.

471. M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik:
"Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region";
IEEE Electron Device Letters, 34, (2013), 432 - 434 doi:10.1109/LED.2013.2241388.

470. B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken:
"Gate Current Random Telegraph Noise and Single Defect Conduction";
Microelectronic Engineering, 109, (2013), 123 - 125 doi:10.1016/j.mee.2013.03.110.

469. H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina:
"Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method";
Journal of Electronic Materials, 42, (2013), 2091 - 2097 doi:10.1007/s116640132533z.

468. H. Karamitaheri, N. Neophytou, H. Kosina:
"Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation";
Journal of Applied Physics, 113, (2013), 204305-1 - 204305-9 doi:10.1063/1.4808100.

467. H. Karamitaheri, N. Neophytou, H. Kosina:
"Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires";
Journal of Electronic Materials, 1, (2013), 1 - 8 doi:10.1007/s11664-013-2884-5.

466. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 60, (2013), 2142 - 2147 doi:10.1109/TED.2013.2262049.

465. G.G. Kareva, M. I. Vexler, Yu. Illarionov:
"Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode";
Microelectronic Engineering, 109, (2013), 270 - 273 doi:10.1016/j.mee.2013.03.063.

464. K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi:
"Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain";
IEEE Transactions on Electron Devices, 60, (2013), 2464 - 2470 doi:10.1109/TED.2013.2266300.

463. H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement";
Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y.

462. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory";
Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017.

461. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683.

460. J.-F. Mennemann, A. Jüngel, H. Kosina:
"Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator";
Journal of Computational Physics, 239, (2013), 187 - 205 doi:10.1016/j.jcp.2012.12.009.

459. M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska:
"Wigner Quasi-Particle Attributes - An Asymptotic Perspective";
Applied Physics Letters, 102, (2013), 163113-1 - 163113-4 doi:10.1063/1.4802931.

458. N. Neophytou, H. Karamitaheri, H. Kosina:
"Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers";
Journal of Computational Electronics, 12, (2013), 611 - 622 doi:10.1007/s1082501305223.

457. N. Neophytou, H. Kosina:
"Optimizing Thermoelectric Power Factor by Means of a Potential Barrier";
Journal of Applied Physics, 114, (2013), 044315_1 - 044315-6 doi:10.1063/1.4816792.

456. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
"Power factor enhancement by inhomogeneous distribution of dopants in two-phase nanocrystalline systems";
Journal of Electronic Materials, 43, (2013), 1896 - 1904 doi:10.1007/s11664-013-z.

455. N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
"Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si";
Nanotechnology, 24, (2013), 205402 doi:10.1088/0957-4484/24/20/205402.

454. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055.

453. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana, 42, (2013), 205 - 211.

452. G. Pobegen, T. Grasser:
"Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757.

451. G. Pobegen, T. Grasser:
"On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816.

450. G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
"Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015.

449. G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
"Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521.

448. P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr:
"Decoherence Effects in the Wigner Function Formalism";
Journal of Computational Electronics, 12, (2013), 388 - 396 doi:10.1007/s10825-013-0480-9.

447. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"Decoherence and Time Reversibility: The Role of Randomness at Interfaces";
Journal of Applied Physics, 114, (2013), 174902-1 - 174902-7 doi:10.1063/1.4828736.

446. A. P. Singulani, H. Ceric, S. Selberherr:
"Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132.

445. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling";
Ferroelectrics, 442, (2013), 10 - 17 doi:10.1080/00150193.2013.773854.

444. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them";
Journal of Experimental and Theoretical Physics, 116, (2013), 987 - 994 doi:10.1134/S1063776113060149.

443. A. S. Starkov, I. Starkov:
"Domain Wall Motion for Slowly Varying Electric Field";
Ferroelectrics, 442, (2013), 1 - 9 doi:10.1080/00150193.2013.773852.

442. I. Starkov, H. Enichlmair:
"Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs";
Journal of Vacuum Science & Technology B, 31, (2013), 01A118-1 - 01A118-7 doi:10.1116/1.4774106.

441. S. M. Tabatabaei, M. Noei, K. Khaliji, M. Pourfath, M. Fathipour:
"A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor";
Journal of Applied Physics, 113, (2013), 163708-1 - 163708-6 doi:10.1063/1.4803032.

440. M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken:
"Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions";
Journal of Vacuum Science & Technology B, 31, (2013), 01A114-1 - 01A114-4 doi:10.1116/1.4772587.

439. S. Touski, M. Pourfath:
"Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons";
Applied Physics Letters, 103, (2013), 1435061 - 1435063 doi:10.1063/1.4824362.

438. M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov:
"A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures";
Semiconductors (Physics of Semiconductor Devices), 47, (2013), 686 - 694 doi:10.1134/S1063782613050230.

437. T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
"Multiple Purpose Spin Transfer Torque Operated Devices";
Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W.

436. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030.

435. S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan:
"Impact of Effective Mass on the Scaling Behavior of the fT and fmax of III-V High-Electron-Mobility Transistors";
IEEE Transactions on Nanotechnology, 11, (2012), 1160 - 1173.

434. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035.

433. J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken:
"BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic";
Microelectronics Reliability, 52, (2012), 1932 - 1935 doi:10.1016/j.microrel.2012.06.058.

432. J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken:
"Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs";
IEEE Electron Device Letters, 33, (2012), 779 - 781.

431. T. Grasser:
"Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities";
Microelectronics Reliability, 52, (invited) (2012), 39 - 70 doi:10.1016/j.microrel.2011.09.002.

430. H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina:
"Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons";
Journal of Applied Physics, 111, (2012), 054501-1 - 054501-9 doi:10.1063/1.3688034.

429. H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina:
"Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method";
Journal of Computational Electronics, 11, (invited) (2012), 14 - 21 doi:10.1007/s10825-011-0380-9.

428. J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski:
"Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors";
Japanese Journal of Applied Physics, 51, (2012), 054102-1 - 054102-5 doi:10.1143/JJAP.51.054102.

427. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565.

426. A. Makarov, V. Sverdlov, S. Selberherr:
"Emerging Memory Technologies: Trends, Challenges, and Modeling Methods";
Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020.

425. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
"Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons";
Journal of Applied Physics, 111, (2012), 074318-1 - 074318-9 doi:10.1063/1.3702429.

424. M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha:
"Physical Scales in the Wigner-Boltzmann Equation";
Annals of Physics, 328, (2012), 220 - 237 doi:10.1016/j.aop.2012.10.001.

423. H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
"Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices";
Journal of Applied Physics, 111, (2012), 093512-1 - 093512-6 doi:10.1063/1.4710988.

422. N. Neophytou, H. Kosina:
"Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors";
IEEE Electron Device Letters, 33, (2012), 652 - 654 doi:10.1109/LED.2012.2188879.

421. N. Neophytou, H. Kosina:
"Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands";
Solid-State Electronics, 70, (2012), 81 - 91 doi:10.1016/j.sse.2011.11.018.

420. N. Neophytou, H. Kosina:
"Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels";
Journal of Applied Physics, 112, (2012), 024305-1 - 024305-6 doi:10.1063/1.4737122.

419. N. Neophytou, H. Kosina:
"Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires";
Journal of Computational Electronics, 11, (invited) (2012), 29 - 44 doi:10.1007/s10825-012-0383-1.

418. N. Neophytou, H. Kosina:
"On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires";
Journal of Electronic Materials, 41, (2012), 1305 - 1311 doi:10.1007/s11664-011-1891-7.

417. M. Noei, M. Moradinasab, M. Fathipour:
"A computational study of ballistic graphene nanoribbon field effect transistors";
Physica E: Low-dimensional Systems and Nanostructures, 44, (2012), 1780 - 1786 doi:10.1016/j.physe.2011.12.018.

416. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021.

415. F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci:
"Multi-Scale Modelling for Devices and Circuits";
E-Nano Newsletter, Special Issue April 2012, (2012), 31 page(s) .

414. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015.

413. K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser:
"New Insights on the PBTI Phenomena in SiON pMOSFETs";
Microelectronics Reliability, 52, (2012), 1891 - 1894 doi:10.1016/j.microrel.2012.06.015.

412. K. Rupp:
"High-Level Manipulation of OpenCL-Based Subvectors and Submatrices";
Procedia Computer Science, 9, (2012), 1857 - 1866 doi:10.1016/j.procs.2012.04.204.

411. F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
"A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1.

410. B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
"A bi-functional quantum cascade device for same-frequency lasing and detection";
Applied Physics Letters, 101, (2012), 1911091 - 1911094.

409. Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina:
"Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement";
Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022.

408. A. Starkov, O. Pakhomov, I. Starkov:
"Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions";
Ferroelectrics, 427, (2012), 78 - 83 doi:10.1080/00150193.2012.674413.

407. A. Starkov, O. Pakhomov, I. Starkov:
"Solid-State Cooler: New Opportunities";
Ferroelectrics, 430, (2012), 108 - 114 doi:10.1080/00150193.2012.677730.

406. M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Defect-Centric Perspective of Time-Dependent BTI Variability";
Microelectronics Reliability, 52, (2012), 1883 - 1890 doi:10.1016/j.microrel.2012.06.120.

405. M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser:
"Applicability of Macroscopic Transport Models to Decananometer MOSFETs";
IEEE Transactions on Electron Devices, 59, (2012), 639 - 646 doi:10.1109/TED.2011.2181177.

404. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr:
"Physics-Based Modeling of GaN HEMTs";
IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118.

403. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina:
"Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness";
IEEE Transactions on Electron Devices, 59, (2012), 3527 - 3532 doi:10.1109/TED.2012.2218817.

402. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 59, (2012), 433 - 440 doi:10.1109/TED.2011.2173690.

401. O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr:
"Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films";
IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211.

400. H. Ceric, S. Selberherr:
"Electromigration in Submicron Interconnect Features of Integrated Circuits";
Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001.

399. J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio:
"Strained MOSFETs on Ordered SiGe Dots";
Solid-State Electronics, 65-66, (2011), 81 - 87 doi:10.1016/j.sse.2011.06.041.

398. A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov:
"Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics";
Journal of Vacuum Science & Technology B, 29, (2011), 01A501-1 - 01A501-5 doi:10.1116/1.3532944.

397. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
"On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065.

396. A. Garcia-Barrientos, V. Palankovski:
"Numerical Simulations of Amplification of Space Charge Waves in n-InP Films";
Materials Science and Engineering B, 176, (2011), 1368 - 1372 doi:10.1016/j.mseb.2011.02.014.

395. A. Garcia-Barrientos, V. Palankovski:
"Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity";
Applied Physics Letters, 98, (2011), 072110-1 - 072110-3 doi:10.1063/1.3555467.

394. W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473.

393. T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel:
"The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666.

392. R. Heinzl, P. Schwaha:
"A Generic Topology Library";
Science of Computer Programming, 76, (2011), 324 - 346 doi:10.1016/j.scico.2009.09.007.

391. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Journal of Vacuum Science & Technology B, 29, (invited) (2011), 01AB01-1 - 01AB01-7.

390. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices";
Journal of Applied Physics, 110, (2011), 054506-1 - 054506-6 doi:10.1063/1.3629990.

389. H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina:
"Graphene-Based Antidots for Thermoelectric Applications";
Journal of the Electrochemical Society, 158, (2011), K213 - K216 doi:10.1149/2.025112jes.

388. J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr:
"Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 2227 - 2234 doi:10.1109/TED.2011.2150226.

387. J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr:
"Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 2218 - 2226 doi:10.1109/TED.2011.2150225.

386. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376.

385. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations";
Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503.

384. N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr:
"Performance Assessment of Nanoscale Field Effect Diodes";
IEEE Transactions on Electron Devices, 58, (2011), 2378 - 2384 doi:10.1109/TED.2011.2152844.

383. N. Neophytou, G. Klimeck, H. Kosina:
"Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities";
Journal of Applied Physics, 109, (2011), 053721-1 - 053721-6 doi:10.1063/1.3556435.

382. N. Neophytou, H. Kosina:
"Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation";
Physical Review B, 84, (2011), 085313-1 - 085313-15 doi:10.1103/PhysRevB.84.085313.

381. N. Neophytou, H. Kosina:
"Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires";
Physical Review B, 83, (2011), 245305-1 - 245305-16 doi:10.1103/PhysRevB.83.245305.

380. N. Neophytou, H. Kosina:
"Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement";
Applied Physics Letters, 99, (2011), 092110-1 - 092110-3 doi:10.1063/1.3631680.

379. N. Neophytou, H. Kosina:
"Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport";
Journal of Electronic Materials, 40, (2011), 753 - 758 doi:10.1007/s11664-011-1542-z.

378. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049.

377. G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Microelectronics Reliability, 51, (2011), 1530 - 1534 doi:10.1016/j.microrel.2011.06.024.

376. H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari:
"Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity";
Journal of Applied Physics, 110, (2011), 064320-1 - 064320-6 doi:10.1063/1.3641981.

375. K. Rupp, S. Selberherr:
"The Economic Limit to Moore's Law";
IEEE Transactions on Semiconductor Manufacturing, 24, (2011), 1 - 4 doi:10.1109/TSM.2010.2089811.

374. F. Schanovsky, W. Gös, T. Grasser:
"Multiphonon Hole Trapping from First Principles";
Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269.

373. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field";
Technical Physics Letters, 79, (2011), 1139 - 1141 doi:10.1134/S1063785011120133.

372. I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021.

371. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267.

370. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken:
"Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
Journal of Vacuum Science & Technology B, 29, (2011), 01AA04-1 - 01AA04-5 doi:10.1116/1.3532947.

369. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken:
"Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress";
Applied Physics Letters, 98, (2011), 183506-1 - 183506-3 doi:10.1063/1.3586780.

368. M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken:
"Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics";
Microelectronic Engineering, 88, (2011), 1243 - 1246 doi:10.1016/j.mee.2011.03.097.

367. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089.

366. A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr:
"An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons";
IEEE Transactions on Electron Devices, 58, (2011), 3725 - 3735 doi:10.1109/TED.2011.2163719.

365. T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip";
IEEE Transactions on Device and Materials Reliability, 10, (2010), 3 - 8.

364. T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress";
Journal of Applied Physics, 107, (2010), 024508-1 - 024508-8.

363. T. Aichinger, M. Nelhiebel, T. Grasser:
"Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen";
Applied Physics Letters, 96, (2010), 133511-1 - 133511-3.

362. O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation";
Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010.

361. O. Ertl, S. Selberherr:
"Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation";
Microelectronic Engineering, 87, (2010), 20 - 29 doi:10.1016/j.mee.2009.05.011.

360. T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer:
"Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors";
Physical Review B, 82, (2010), 245318-1 - 245318-10 doi:10.1103/PhysRevB.82.245318.

359. R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm:
"Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing";
IEEE Transactions on Device and Materials Reliability, 10, (2010), 47 - 54 doi:10.1109/TDMR.2009.2032768.

358. R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel:
"Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing";
Measurement Science & Technology, 21, (2010), 55702 - 55710.

357. B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
IEEE Electron Device Letters, 31, (2010), 411 - 413 doi:10.1109/LED.2010.2044014.

356. A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli:
"Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires";
Nano Letters, 10, (2010), 3204 - 3208 doi:10.1021/nl102179c.

355. A. Makarov, V. Sverdlov, S. Selberherr:
"Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique";
Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8.

354. S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher:
"Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz";
IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244.

353. G. Milovanovic, H. Kosina:
"A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation";
Journal of Computational Electronics, 9, (2010), 211 - 217 doi:10.1007/s10825-010-0325-8.

352. M. Nedjalkov, H. Kosina, P. Schwaha:
"Device Modeling in the Wigner Picture";
Journal of Computational Electronics, 9, (2010), 218 - 223 doi:10.1007/s10825-010-0316-9.

351. N. Neophytou, S. Kim, G. Klimeck, H. Kosina:
"On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias";
Journal of Applied Physics, 107, (2010), 113701-1 - 113701-9.

350. N. Neophytou, H. Kosina:
"Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis";
Nano Letters, 10, (2010), 4913 - 4919 doi:10.1021/nl102875k.

349. N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model";
Journal of Electronic Materials, 39, (2010), 1902 - 1908 doi:10.1007/s11664-009-1035-5.

348. R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007.

347. K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
Journal of Computational Physics, 229, (2010), 8750 - 8765.

346. K. Rupp, S. Selberherr:
"The Economic Limit to Moore´s Law";
Proceedings of the IEEE, 98, (2010), 351 - 353 doi:10.1109/JPROC.2010.2040205.

345. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance";
Applied Physics Letters, 96, (2010), 223509-1 - 223509-3 doi:10.1063/1.3428783.

344. F. Schanovsky, W. Gös, T. Grasser:
"An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT";
Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x.

343. A. S. Starkov, O. V. Pakhomov, I. Starkov:
"Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model";
JETP Letters, 91, (2010), 507 - 511.

342. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0.

341. S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko:
"Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures";
Materials Science in Semiconductor Processing, 13, (2010), 405 - 410 doi:10.1016/j.mssp.2011.07.003.

340. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs";
Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026.

339. T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting";
Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008.

338. T. Aichinger, M. Nelhiebel, T. Grasser:
"A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI";
IEEE Transactions on Electron Devices, 56, (2009), 3018 - 3026.

337. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893.

336. O. Ertl, S. Selberherr:
"A Fast Level Set Framework for Large Three-Dimensional Topography Simulations";
Computer Physics Communications, 180, (2009), 1242 - 1250 doi:10.1016/j.cpc.2009.02.002.

335. A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski:
"Nonstationary Effects of the Space Charge in Semiconductor Structures";
Journal of Applied Physics, 105, (2009), 074501-1 - 074501-6 doi:10.1063/1.3093689.

334. T. Grasser, B. Kaczer:
"Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs";
IEEE Transactions on Electron Devices, 56, (2009), 1056 - 1062 doi:10.1109/TED.2009.2015160.

333. T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882.

332. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040.

331. R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment";
International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 505 - 520 doi:10.1080/17445760902758545.

330. B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks";
Journal of Vacuum Science & Technology B, 27, (2009), 459 - 462.

329. G. Milovanovic, O. Baumgartner, H. Kosina:
"On Open Boundary Conditions for Quantum Cascade Structures";
Optical and Quantum Electronics, 41, (2009), 921 - 932 doi:10.1007/s11082-010-9406-y.

328. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Journal Integrated Circuits and Systems, 4, (2009), 67 - 72.

327. C. Poschalko, S. Selberherr:
"Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads";
IEEE Transactions on Electromagnetic Compatibility, 51, (2009), 18 - 24 doi:10.1109/TEMC.2008.2008815.

326. M. Pourfath, H. Kosina:
"Computational Study of Carbon-Based Electronics";
Journal of Computational Electronics, 8, (2009), 427 - 440 doi:10.1007/s10825-009-0285-z.

325. H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 106 - 114 doi:10.1109/TDMR.2009.2021389.

324. P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications";
International Journal of Parallel, Emergent and Distributed Systems, 24, (2009), 539 - 549 doi:10.1080/17445760902758552.

323. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling of Modern MOSFETs with Strain";
Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1.

322. V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress";
Journal Integrated Circuits and Systems, 4, (2009), 55 - 60.

321. S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018.

320. S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen:
"Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films";
Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307.

319. M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser:
"Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer";
Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066.

318. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Microelectronics Reliability, 48, (2008), 1178 - 1184 doi:10.1016/j.microrel.2008.06.018.

317. J. Cervenka, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Sacrificial Etching";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1.

316. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247.

315. T. Grasser, W. Gös, B. Kaczer:
"Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models";
IEEE Transactions on Device and Materials Reliability, 8, (invited) (2008), 79 - 97 doi:10.1109/TDMR.2007.912779.

314. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353.

313. G. Karlowatz, W. Wessner, H. Kosina:
"Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation";
Mathematics and Computers in Simulation, 79, (2008), 972 - 979 doi:10.1016/j.matcom.2008.02.021.

312. P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser:
"Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 490.

311. K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken:
"Applicability of Charge Pumping on Germanium MOSFETs";
IEEE Electron Device Letters, 29, (2008), 1364 - 1366 doi:10.1109/LED.2008.2007582.

310. M. Nedjalkov, D. Vasileska:
"Semi-Discrete 2D Wigner-Particle Approach";
Journal of Computational Electronics, 7, (2008), 222 - 225 doi:10.1007/s10825-008-0197-3.

309. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9.

308. M. Pourfath, H. Kosina:
"Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets";
Journal of Computational and Theoretical Nanoscience, 5, (2008), 1128 - 1137 doi:10.1166/jctn.2008.011.

307. M. Pourfath, H. Kosina, S. Selberherr:
"Numerical Study of Quantum Transport in Carbon Nanotube Transistors";
Mathematics and Computers in Simulation, 79, (2008), 1051 - 1059 doi:10.1016/j.matcom.2007.09.004.

306. M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance";
Journal of Physics: Conference Series, 109, (2008), 1 - 5 doi:10.1088/1742-6596/109/1/012029.

305. K. Raleva, D. Vasileska, S.M. Goodnick, M. Nedjalkov:
"Modeling Thermal Effects in Nanodevices";
IEEE Transactions on Electron Devices, 55, (2008), 1306 - 1316.

304. V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019.

303. V. Sverdlov, H. Kosina, S. Selberherr:
"Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory";
Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7.

302. V. Sverdlov, S. Selberherr:
"Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond";
Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054.

301. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Current Transport Models for Nanoscale Semiconductor Devices";
Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001.

300. E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr:
"The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon";
Mathematics and Computers in Simulation, 79, (2008), 1071 - 1077 doi:10.1016/j.matcom.2007.10.004.

299. S. Vainshtein, V. Yuferev, V. Palankovski, D. Ong, J. Kostamovaara:
"Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations";
Applied Physics Letters, 92, (2008), 062114-1 - 062114-3 doi:10.1063/1.2870096.

298. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"A 2D Non-Parabolic Six-Moments Model";
Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010.

297. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x.

296. S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study";
Solid-State Electronics, 52, (2008), 1791 - 1795 doi:10.1016/j.sse.2008.07.011.

295. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533.

294. R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Microelectronics Reliability, 47, (2007), 697 - 699.

293. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102.

292. C. Heitzinger, Ch. Ringhofer, S. Selberherr:
"Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities";
Communications in Mathematical Sciences, 5, (2007), 779 - 788 doi:10.4310/CMS.2007.v5.n4.a2.

291. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
"Comparison of Deposition Models for a TEOS LPCVD Process";
Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058.

290. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
"A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7.

289. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP - A Gate Stack Analyzer";
Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059.

288. H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
International Journal of High Speed Electronics and Systems, 17, (2007), 475 - 484.

287. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersböck, S. Selberherr, A.-T Pham, B. Meinerzhagen, P. Wong, Y. Nishida, K. Saraswat:
"High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs";
Microelectronic Engineering, 84, (2007), 2063 - 2066 doi:10.1016/j.mee.2007.04.085.

286. L. Li, G. Meller, H. Kosina:
"Analytical Conductivity Model for Doped Organic Semiconductors";
Journal of Applied Physics, 101, (2007), 1 - 4.

285. L. Li, G. Meller, H. Kosina:
"Carrier Concentration Dependence of the Mobility in Organic Semiconductors";
Synthetic Metals, 157, (2007), 243 - 246.

284. L. Li, G. Meller, H. Kosina:
"Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes";
Applied Physics Letters, 91, (2007), 1 - 3 doi:10.1063/1.2801702.

283. L. Li, G. Meller, H. Kosina:
"Influence of Traps on Charge Transport in Organic Semiconductors";
Solid-State Electronics, 51, (2007), 445 - 448.

282. M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr:
"Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method";
IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240.

281. M. Movahhedi, A. Abdipour, A. Nentchev, M. Dehghan, S. Selberherr:
"Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method";
IEEE Transactions on Microwave Theory and Techniques, 55, (2007), 1322 - 1331 doi:10.1109/TMTT.2007.897777.

280. M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
"Ultrafast Wigner Transport in Quantum Wires";
Journal of Computational Electronics, 6, (2007), 235 - 238 doi:10.1007/s10825-006-0101-y.

279. M. Nedjalkov, D. Vasileska, I. Dimov, G. Arsov:
"Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices";
Monte Carlo Methods and Applications, 13, (2007), 299 - 331 doi:10.1515/MCMA.2007.017.

278. P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak:
"Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks";
IEEE Transactions on Electron Devices, 54, (2007), 106 - 114.

277. M. Pourfath, H. Kosina:
"The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors";
Nanotechnology, 18, (2007), 424036 - 424041 doi:10.1088/0957-4484/18/42/424036.

276. M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Journal of Computational Electronics, 6, (2007), 321 - 324 doi:10.1007/s10825-006-0113-7.

275. M. Pourfath, H. Kosina, S. Selberherr:
"Geometry Optimization for Carbon Nanotube Transistors";
Solid-State Electronics, 51, (2007), 1565 - 1571 doi:10.1016/j.sse.2007.09.021.

274. M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling CNTFETs";
Journal of Computational Electronics, 6, (2007), 243 - 246 doi:10.1007/s10825-006-0099-1.

273. A. Sheikholeslami, F. Parhami, H. Puchner, S. Selberherr:
"Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers";
Journal of Physics: Conference Series, 61, (2007), 1051 - 1055 doi:10.1088/1742-6596/61/1/208.

272. G. Span, M. Wagner, T. Grasser, L. Holmgren:
"Miniaturized TEG with Thermal Generation of Free Carriers";
Physica Status Solidi - Rapid Research Letters, 1, (2007), 241 - 243 doi:10.1002/pssr.200701171.

271. M. Spevak, T. Grasser:
"Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26, (2007), 1408 - 1416.

270. V. Sverdlov, E. Ungersböck, H. Kosina:
"Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain";
IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340.

269. V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr:
"Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations";
Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022.

268. O. Triebl, T. Grasser:
"Vector Discretization Schemes in Technology CAD Environments";
Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176.

267. E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0.

266. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
"The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880.

265. M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser:
"Quantum Correction for DG MOSFETs";
Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7.

264. M. Wagner, G. Span, S. Holzer, T. Grasser:
"Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content";
Semiconductor Science and Technology, 22, (2007), 173 - 176.

263. R. Wittmann, S. Selberherr:
"A Study of Ion Implantation into Crystalline Germanium";
Solid-State Electronics, 51, (2007), 982 - 988 doi:10.1016/j.sse.2007.03.019.

262. J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
"Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514.

261. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639.

260. M. Karner, A. Gehring, H. Kosina:
"Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
Journal of Computational Electronics, 5, (2006), 161 - 165.

259. Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev:
"A Numerical Study of Transport and Shot Noise in 2D Hopping";
Journal of Physics: Condensed Matter, 18, (2006), 1999 - 2012.

258. Y. Kinkhabwala, V. Sverdlov, K. Likharev:
"A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport";
Journal of Physics: Condensed Matter, 18, (2006), 2013 - 2027.

257. H. Kosina:
"Wigner function approach to nano device simulation";
International Journal of Computational Science and Engineering, 2, (2006), 100 - 118.

256. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
International Journal of High Speed Electronics and Systems, 16, (2006), 115 - 136 doi:10.1142/S0129156406003576.

255. L. Li, G. Meller, H. Kosina:
"Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors";
Microelectronics Journal, 38, (2006), 47 - 51.

254. G. Meller, L. Li, S. Holzer, H. Kosina:
"Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems";
Optical and Quantum Electronics, 38, (2006), 993 - 1004.

253. M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski:
"Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires";
Physical Review B, 74, (2006), 035311-1 - 035311-18 doi:10.1103/PhysRevB.74.035311.

252. M. Pourfath, H. Kosina, S. Selberherr:
"A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors";
Journal of Computational Electronics, 5, (2006), 155 - 159 doi:10.1007/s10825-006-8836-z.

251. M. Pourfath, H. Kosina, S. Selberherr:
"Rigorous Modeling of Carbon Nanotube Transistors";
Journal of Physics: Conference Series, 38, (2006), 29 - 32 doi:10.1088/1742-6596/38/1/008.

250. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6.

249. V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling Current Transport in Ultra-Scaled Field-Effect Transistors";
Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009.

248. E. Ungersböck, H. Kosina:
"Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers";
Journal of Computational Electronics, 5, (2006), 79 - 83.

247. W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2129 - 2139 doi:10.1109/TCAD.2005.862750.

246. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845.

245. T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
"Numerical Analysis of SiC Merged PiN Schottky Diodes";
Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949.

244. L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina:
"Method for Predicting fT for Carbon Nanotube FETs";
IEEE Transactions on Nanotechnology, Vol. 4, (2005), 699 - 704.

243. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788.

242. A. Gehring, H. Kosina:
"Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method";
Journal of Computational Electronics, 4, (2005), 67 - 70.

241. A. Gehring, S. Selberherr:
"Gate Current Modeling for MOSFETs";
Journal of Computational and Theoretical Nanoscience, 2, (invited) (2005), 26 - 44 doi:10.1166/jctn.2005.002.

240. T. Grasser:
"Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation";
Physica A: Statistical Mechanics and its Applications, 349, (2005), 221 - 258.

239. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
"Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311.

238. C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
"A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24, (2005), 1485 - 1491 doi:10.1109/TCAD.2005.852297.

237. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium";
IEEE Transactions on Electron Devices, 52, (2005), 2404 - 2408.

236. S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793.

235. M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park:
"Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors";
Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491.

234. M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043.

233. M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z.

232. V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr:
"Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach";
Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013.

231. E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr:
"Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors";
IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402.

230. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"An Advanced Equation Assembly Module";
Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5.

229. T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042.

228. T. Binder, C. Heitzinger, S. Selberherr:
"A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23, (2004), 814 - 822 doi:10.1109/TCAD.2004.828130.

227. A. Gehring, S. Selberherr:
"Evolution of Current Transport Models for Engineering Applications";
Journal of Computational Electronics, 3, (2004), 149 - 155 doi:10.1007/s10825-004-7035-z.

226. A. Gehring, S. Selberherr:
"Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
IEEE Transactions on Device and Materials Reliability, 4, (2004), 306 - 319 doi:10.1109/TDMR.2004.836727.

225. A. Gehring, S. Selberherr:
"Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
Microelectronics Reliability, 44, (2004), 1879 - 1884 doi:10.1016/j.microrel.2004.07.101.

224. T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1.

223. C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation, 66, (2004), 219 - 230 doi:10.1016/j.matcom.2003.11.010.

222. C. Heitzinger, Ch. Ringhofer:
"A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation";
Journal of Computational Electronics, 3, (2004), 33 - 44.

221. C. Heitzinger, S. Selberherr:
"On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
Microelectronics Journal, 35, (2004), 167 - 171 doi:10.1016/j.mejo.2003.09.014.

220. C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process";
IEEE Transactions on Electron Devices, 51, (2004), 1129 - 1134 doi:10.1109/TED.2004.829868.

219. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011.

218. H. Kosina, M Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model";
Monte Carlo Methods and Applications, 10, (2004), 359 - 368 doi:10.1515/mcma.2004.10.3-4.359.

217. M. Nedjalkov, S. Ahmed, D. Vasileska:
"A Self-Consistent Event Biasing Scheme for Statistical Enhancement";
Journal of Computational Electronics, 3, (2004), 305 - 309.

216. M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
Monte Carlo Methods and Applications, 10, (2004), 461 - 468 doi:10.1515/mcma.2004.10.3-4.461.

215. M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
"Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
Physical Review B, 70, (2004), 1 - 16 doi:10.1103/PhysRevB.70.115319.

214. M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology, 19, (2004), 226 - 228 doi:10.1088/0268-1242/19/4/076.

213. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034.

212. V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology, 4, (invited) (2004), 15 - 25.

211. V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability, 44, (invited) (2004), 889 - 897 doi:10.1016/j.microrel.2004.02.009.

210. V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224, (2004), 312 - 319 doi:10.1016/j.apsusc.2003.09.036.

209. J.M. Park, R. Klima, S. Selberherr:
"High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
Microelectronics Journal, 35, (2004), 299 - 304 doi:10.1016/S0026-2692(03)00192-7.

208. J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015.

207. Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
"Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
SIAM Journal on Applied Mathematics, 64, (2004), 1933 - 1953 doi:10.1137/S0036139903428914.

206. R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
"Analysis of Split-Drain MAGFETs";
IEEE Transactions on Electron Devices, 51, (2004), 2237 - 2245 doi:10.1109/TED.2004.839869.

205. S. Smirnov, H. Kosina:
"Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates";
Solid-State Electronics, 48, (invited) (2004), 1325 - 1335.

204. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035.

203. T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4.

202. T. Binder, A. Hössinger, S. Selberherr:
"Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 1204 - 1214 doi:10.1109/TCAD.2003.816219.

201. V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak:
"Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers";
Physics of Low-dimensional Structures, 5-6, (2003), 99 - 108.

200. H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426.

199. J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
"Three-Dimensional Device Optimization by Green's Functions";
European Physical Journal - Applied Physics, 21, (2003), 103 - 106 doi:10.1051/epjap:2002121.

198. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440.

197. A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability, 43, (2003), 1495 - 1500 doi:10.1016/S0026-2714(03)00265-8.

196. A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Journal of Computational Electronics, 2, (2003), 219 - 223 doi:10.1023/B:JCEL.0000011428.85286.7d.

195. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X.

194. T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150.

193. C. Harlander, R. Sabelka, S. Selberherr:
"Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method";
Microelectronics Journal, 34, (2003), 815 - 821 doi:10.1016/S0026-2692(03)00147-2.

192. C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 879 - 883 doi:10.1109/TCAD.2003.814259.

191. C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
"Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22, (2003), 285 - 292 doi:10.1109/TCAD.2002.807879.

190. H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
International Journal of High Speed Electronics and Systems, 13, (invited) (2003), 727 - 769.

189. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Journal of Computational Electronics, 2, (2003), 147 - 151 doi:10.1023/B:JCEL.0000011416.93047.69.

188. H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Mathematics and Computers in Simulation, 62, (2003), 367 - 375 doi:10.1016/S0378-4754(02)00245-8.

187. H. Kosina, M. Nedjalkov, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. I. Theory";
Journal of Applied Physics, 93, (2003), 3553 - 3563 doi:10.1063/1.1544654.

186. M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Mathematics and Computers in Simulation, 62, (2003), 453 - 461 doi:10.1016/S0378-4754(02)00246-X.

185. M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Microelectronics Journal, 34, (2003), 443 - 445 doi:10.1016/S0026-2692(03)00069-7.

184. M. Nedjalkov, H. Kosina, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
Journal of Applied Physics, 93, (2003), 3564 - 3571 doi:10.1063/1.1544655.

183. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1.

182. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics, 94, (2003), 5791 - 5799 doi:10.1063/1.1616982.

181. S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
IEICE Transactions on Electronics, E86-C, (2003), 350 - 356.

180. H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5.

179. A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X.

178. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617.

177. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273.

176. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257.

175. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik, 444, (invited) (2002), 28 - 41.

174. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik, 444, (invited) (2002), 18 - 27.

173. T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354.

172. T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162.

171. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645.

170. T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Physica B: Condensed Matter, 314, (2002), 301 - 304 doi:10.1016/S0921-4526(01)01417-X.

169. C. Heitzinger, S. Selberherr:
"An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
Microelectronics Journal, 33, (2002), 61 - 68 doi:10.1016/S0026-2692(01)00105-7.

168. H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031.

167. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002.

166. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Journal of Computational Electronics, 1, (2002), 27 - 31 doi:10.1023/A:1020799224110.

165. M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Wigner Equation with Quantum Electron-Phonon Interaction";
Microelectronic Engineering, 63, (2002), 199 - 203 doi:10.1016/S0167-9317(02)00625-1.

164. K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Thin Films";
Radiation Effects and Defects in Solids, 156, (2001), 157 - 161 doi:10.1080/10420150108216888.

163. K. Dragosits, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
IEEE Transactions on Electron Devices, 48, (2001), 316 - 322 doi:10.1109/16.902733.

162. T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz:
"Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures ";
Concurrency and Computation: Practice and Experience, 13, (2001), 1 - 17.

161. F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884.

160. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757.

159. T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366.

158. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000.

157. T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661.

156. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6.

155. H. Kosina, M. Nedjalkov:
"The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices";
Mathematics and Computers in Simulation, 55, (2001), 93 - 102.

154. M. Nedjalkov, H. Kosina:
"Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling";
Mathematics and Computers in Simulation, 55, (2001), 191 - 198.

153. M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
VLSI Design, 13, (2001), 405 - 411 doi:10.1155/2001/54247.

152. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473.

151. V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits, 36, (invited) (2001), 1365 - 1370 doi:10.1109/4.944664.

150. V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
Radiation Effects and Defects in Solids, 156, (2001), 261 - 265 doi:10.1080/10420150108216903.

149. V. Palankovski, R. Schultheis, S. Selberherr:
"Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
IEEE Transactions on Electron Devices, 48, (2001), 1264 - 1269 doi:10.1109/16.925258.

148. V. Palankovski, S. Selberherr:
"Micro Materials Modeling in MINIMOS-NT";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7, (2001), 183 - 187 doi:10.1007/s005420000076.

147. R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices, 48, (2001), 210 - 217 doi:10.1109/16.902718.

146. R. Sabelka, S. Selberherr:
"A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures";
Microelectronics Journal, 32, (2001), 163 - 171 doi:10.1016/S0026-2692(00)00113-0.

145. H. Brech, T. Grave, S. Selberherr:
"Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
IEEE Transactions on Electron Devices, 47, (2000), 1957 - 1964 doi:10.1109/16.870581.

144. A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
IEICE Transactions on Electronics, E83-C, (2000), 1259 - 1266.

143. T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5.

142. A. Hössinger, E. Langer, S. Selberherr:
"Parallelization of a Monte Carlo Ion Implantation Simulator";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 560 - 567 doi:10.1109/43.845080.

141. M. Knaipp, W. Kanert, S. Selberherr:
"Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
Solid-State Electronics, 44, (2000), 1135 - 1143 doi:10.1016/S0038-1101(00)00046-0.

140. R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr:
"On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19, (2000), 1233 - 1240 doi:10.1109/43.892848.

139. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
Journal of Applied Physics, 87, (2000), 4308 - 4314 doi:10.1063/1.373070.

138. H. Kosina, M. Nedjalkov, S. Selberherr:
"Theory of the Monte Carlo Method for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 47, (2000), 1898 - 1908 doi:10.1109/16.870569.

137. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
IEICE Transactions on Electronics, E83-C, (2000), 1218 - 1223.

136. H. Puchner, R. Castagnetti, W. Pyka:
"Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions";
Microelectronic Engineering, 53, (2000), 429 - 432.

135. W. Pyka, H. Kirchauer, S. Selberherr:
"Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
Microelectronic Engineering, 53, (2000), 449 - 452 doi:10.1016/S0167-9317(00)00353-1.

134. W. Pyka, R. Martins, S. Selberherr:
"Optimized Algorithms for Three-Dimensional Cellular Topography Simulation";
IEEE Journal of Technology Computer Aided Design, 1, (2000), doi:10.1109/TCAD.1996.6449177.

133. R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing, 3, (2000), 149 - 155 doi:10.1016/S1369-8001(00)00015-9.

132. R. Strasser, S. Selberherr:
"Practical Inverse Modeling with SIESTA";
IEICE Transactions on Electronics, 83-C, (2000), 1303 - 1310.

131. K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Journal of the Korean Physical Society, 35, (1999), 104 - 106 doi:10.3938/jkps.35.104.

130. P. Fleischmann, W. Pyka, S. Selberherr:
"Mesh Generation for Application in Technology CAD";
IEICE Transactions on Electronics, E82-C, (invited) (1999), 937 - 947.

129. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43, (1999), 1791 - 1795 doi:10.1016/S0038-1101(99)00132-X.

128. H. Kosina:
"A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis";
IEEE Transactions on Electron Devices, 46, (1999), 1196 - 1200.

127. V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B, 66, (1999), 46 - 49 doi:10.1016/S0921-5107(99)00118-X.

126. C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools";
IEEE Transactions on Semiconductor Manufacturing, 12, (1999), 76 - 86 doi:10.1109/66.744527.

125. W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
"Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18, (1999), 1741 - 1749 doi:10.1109/43.811323.

124. M. Radi, E. Leitner, S. Selberherr:
"AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
IEEE Journal of Technology Computer Aided Design, 1, (1999), doi:10.1109/TCAD.1996.6449174.

123. M. Stockinger, A. Wild, S. Selberherr:
"Drive Performance of an Asymmetric MOSFET Structure: The Peak Device";
Microelectronics Journal, 30, (1999), 229 - 233 doi:10.1016/S0026-2692(98)00111-6.

122. K. Zankel, H. Kosina:
"Capacitance Simulation of Irradiated Semiconductor Detectors";
Il Nuovo Cimento, 112, (1999), 43 - 47.

121. W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1236 - 1243 doi:10.1109/43.736563.

120. G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
VLSI Design, 6, (1998), 209 - 212 doi:10.1155/1998/87014.

119. G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics, 83, (1998), 3096 - 3101 doi:10.1063/1.367067.

118. H. Kosina, M. Harrer:
"A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure";
VLSI Design, 6, (1998), 205 - 208 doi:10.1155/1998/83430.

117. H. Kosina, G. Kaiblinger-Grujin:
"Ionized-Impurity Scattering of Majority Electrons in Silicon";
Solid-State Electronics, 42, (1998), 331 - 338 doi:10.1016/S0038-1101(97)00199-8.

116. H. Kosina, C. Troger:
"SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands";
VLSI Design, 8, (1998), 489 - 493 doi:10.1155/1998/39231.

115. E. Leitner, S. Selberherr:
"Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 561 - 572 doi:10.1109/43.709394.

114. R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
"High-Precision Interconnect Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1148 - 1159 doi:10.1109/43.736187.

113. R. Martins, S. Selberherr, F. Vaz:
"A CMOS IC for Portable EEG Acquisition Systems";
IEEE Transactions on Instrumentation and Measurement, 47, (1998), 1191 - 1196 doi:10.1109/19.746581.

112. M. Nedjalkov, I. Dimov, H. Haug:
"Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering";
Physica Status Solidi B - Basic Solid State Physics, 209, (1998), 109 - 121.

111. H. Noll, S. Selberherr:
"Zur Entwicklung der Mikroelektronik";
Telematik, 4, (1998), 2 - 6.

110. R. Plasun, M. Stockinger, S. Selberherr:
"Integrated Optimization Capabilities in the VISTA Technology CAD Framework";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1244 - 1251 doi:10.1109/43.736564.

109. G. Schrom, De Vivek, S. Selberherr:
"VLSI Performance Metric Based on Minimum TCAD Simulations";
IEEE Journal of Technology Computer Aided Design, 1, (1998), doi:10.1109/TCAD.1996.6449169.

108. G. Schrom, A. Stach, S. Selberherr:
"An Interpolation Based MOSFET Model for Low-Voltage Applications";
Microelectronics Journal, 29, (1998), 529 - 534 doi:10.1016/S0026-2692(98)00002-0.

107. S. Selberherr:
"Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren";
Elektrotechnik und Informationstechnik (e&i), 115, (invited) (1998), 344 - 348 doi:10.1007/BF03159602.

106. C. Wasshuber:
"Grenzen der Miniaturisierung - Die Zukunft der Mikroelektronik";
Informatik Spektrum, 21, (invited) (1998), 223 - 226.

105. C. Wasshuber, H. Kosina:
"Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge";
VLSI Design, 6, (1998), 35 - 38 doi:10.1155/1998/53694.

104. C. Wasshuber, H. Kosina, S. Selberherr:
"A Comparative Study of Single-Electron Memories";
IEEE Transactions on Electron Devices, 45, (1998), 2365 - 2371 doi:10.1109/16.726659.

103. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
VLSI Design, 8, (1998), 219 - 223 doi:10.1155/1998/83017.

102. H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
IEEE Transactions on Electron Devices, 44, (1997), 1822 - 1828 doi:10.1109/16.641348.

101. P. Fleischmann, S. Selberherr:
"Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449165.

100. G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Materials Science Forum, 258-263, (1997), 939 - 944 doi:10.4028/www.scientific.net/MSF.258-263.939.

99. H. Kirchauer, S. Selberherr:
"Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 1431 - 1438 doi:10.1109/43.664225.

98. H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulation";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449163.

97. C. Köpf, H. Kosina, S. Selberherr:
"Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
Solid-State Electronics, 41, (1997), 1139 - 1152 doi:10.1016/S0038-1101(97)00051-8.

96. H. Kosina:
"Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations";
Physica Status Solidi A, 163, (1997), 475 - 489.

95. C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"High-Level TCAD Task Representation and Automation";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449162.

94. T. Simlinger, H. Brech, T. Grave, S. Selberherr:
"Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
IEEE Transactions on Electron Devices, 44, (1997), 700 - 707 doi:10.1109/16.568029.

93. C. Wasshuber, H. Kosina:
"A Single-Electron Device and Circuit Simulator";
Superlattices and Microstructures, 21, (1997), 37 - 42 doi:10.1006/spmi.1996.0138.

92. C. Wasshuber, H. Kosina, S. Selberherr:
"A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling";
IEEE Journal of Technology Computer Aided Design, 1, (1997), doi:10.1109/TCAD.1996.6449164.

91. C. Wasshuber, H. Kosina, S. Selberherr:
"SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16, (1997), 937 - 944 doi:10.1109/43.658562.

90. N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
"Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
Journal of Vacuum Science & Technology B, 14, (1996), 224 - 230 doi:10.1116/1.589033.

89. G. Schrom, C. Pichler, T. Simlinger, S. Selberherr:
"On the Lower Bounds of CMOS Supply Voltage";
Solid-State Electronics, 39, (1996), 425 - 430 doi:10.1016/0038-1101(95)00171-9.

88. K. Vinzenz, S. Selberherr:
"Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen";
Acta Chirurgica Austriaca, 28, (invited) (1996), 60 - 61.

87. W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Trajectory Split Method for Monte Carlo Simulation of Ion Implantation";
IEEE Transactions on Semiconductor Manufacturing, 8, (1995), 402 - 407 doi:10.1109/66.475181.

86. H. Brand, S. Selberherr:
"Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor";
IEEE Transactions on Electron Devices, 42, (1995), 2137 - 2146 doi:10.1109/16.477772.

85. P. Habas:
"The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs";
Microelectronic Engineering, 28, (1995), 171 - 174 doi:10.1016/0167-9317(95)00038-A.

84. S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr:
"The Viennese Integrated System for Technology CAD Applications";
Microelectronics Journal, 26, (1995), 137 - 158 doi:10.1016/0026-2692(95)98918-H.

83. S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger, S. Selberherr:
"VISTA - User Interface, Task Level, and Tool Integration";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1208 - 1222 doi:10.1109/43.466337.

82. N. Khalil, J. Faricelli, D. Bell, S. Selberherr:
"The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling";
IEEE Electron Device Letters, 16, (1995), 17 - 19 doi:10.1109/55.363213.

81. H. Kosina, E. Langer, S. Selberherr:
"Device Modelling for the 1990s";
Microelectronics Journal, 26, (invited) (1995), 217 - 233 doi:10.1016/0026-2692(95)98923-F.

80. M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
"The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI";
Technical Report of IEICE, 95, (1995), 63 - 68.

79. H. Puchner, S. Selberherr:
"An Advanced Model for Dopant Diffusion in Polysilicon";
IEEE Transactions on Electron Devices, 42, (1995), 1750 - 1755 doi:10.1109/16.464423.

78. H. Stippel, E. Leitner, C. Pichler, H. Puchner, E. Strasser, S. Selberherr:
"Process Simulation for the 1990s";
Microelectronics Journal, 26, (invited) (1995), 203 - 215 doi:10.1016/0026-2692(95)98922-E.

77. E. Strasser, S. Selberherr:
"Algorithms and Models for Cellular Based Topography Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14, (1995), 1104 - 1114 doi:10.1109/43.406712.

76. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessene, P. Dollfus, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. Izuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T.-W. Tang, K. Taniguchi, J.L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.-L. Wang, X. Wang, C.-S. Yao, P.D. Yoder, A. Yoshii:
"A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon";
IEEE Transactions on Electron Devices, 41, (1994), 1646 - 1654 doi:10.1109/16.310119.

75. H. Brand, S. Selberherr:
"Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)";
IEICE Transactions on Electronics, E77-C, (1994), 179 - 186.

74. F. Fasching, W. Tuppa, S. Selberherr:
"VISTA - The Data Level";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 72 - 81 doi:10.1109/43.273748.

73. H. Kosina, S. Selberherr:
"A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13, (1994), 201 - 210 doi:10.1109/43.259943.

72. H. Stippel, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree";
IEICE Transactions on Electronics, E77-C, (1994), 118 - 123.

71. E. Strasser, G. Schrom, K. Wimmer, S. Selberherr:
"Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations";
IEICE Transactions on Electronics, E77-C, (1994), 92 - 97.

70. C. Fischer, G. Nanz, S. Selberherr:
"Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas";
Computer Methods in Applied Mechanics and Engineering, 110, (1993), 17 - 24 doi:10.1016/0045-7825(93)90016-Q.

69. S. Halama, S. Selberherr:
"Future Aspects of Process and Device Simulation";
Electron Technology, 26, (invited) (1993), 49 - 57.

68. S. Selberherr:
"Technology Computer-Aided Design";
South African Journal of Physics, 16, (invited) (1993), 1 - 5.

67. P. Habas, J. Faricelli:
"Investigation of the Physical Modeling of the Gate-Depletion Effect";
IEEE Transactions on Electron Devices, 39, (1992), 1496 - 1500.

66. M. Hackel, M. Faber, H. Markum:
"Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks";
Physical Review D, 46, (1992), 5648 - 5654.

65. M. Hackel, M. Faber, H. Markum, M. Müller:
"Chiral Interface for QCD with Dynamical Quarks";
International Journal of Modern Physics C, 3, (1992), 961 - 970.

64. O. Heinreichsberger, S. Selberherr, M. Stiftinger, K. Traar:
"Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation";
SIAM Journal of Scientific and Statistical Computing, 13, (1992), 289 - 306 doi:10.1137/0913015.

63. G. Nanz, P. Dickinger, S. Selberherr:
"Calculation of Contact Currents in Device Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11, (1992), 128 - 136 doi:10.1109/43.108625.

62. J. Demel, S. Selberherr:
"Application of the Complete Tableau Approach in JANAP";
Electrosoft, 2, (1991), 243 - 260.

61. E. Langer:
"Fundamental Analysis of Surface Acoustic Wave Propagation";
International Journal of Engineering Science, 29, (1991), 331 - 343.

60. G. Nanz, W. Kausel, S. Selberherr:
"Self-Adaptive Space and Time Grids in Device Simulation";
International Journal for Numerical Methods in Engineering, 31, (1991), 1357 - 1374 doi:10.1002/nme.1620310709.

59. S. Selberherr:
"Device Modeling and Physics";
Physica Scripta, T35, (invited) (1991), 293 - 298 doi:10.1088/0031-8949/1991/T35/057.

58. S. Selberherr, M. Stiftinger, O. Heinreichsberger, K. Traar:
"On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers";
Computer Physics Communications, 67, (1991), 145 - 156 doi:10.1016/0010-4655(91)90227-C.

57. P. Dickinger:
"New Models of High Voltage DMOS Devices for Circuit Simulation";
Electrosoft, 1, (1990), 298 - 308.

56. P. Habas:
"A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility";
Solid-State Electronics, 33, (1990), 923 - 933.

55. P. Habas, S. Selberherr:
"Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices";
Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20, (1990), 185 - 188.

54. P. Habas, S. Selberherr:
"On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling";
Solid-State Electronics, 33, (1990), 1539 - 1544 doi:10.1016/0038-1101(90)90134-Z.

53. W. Kausel, J.O. Nylander, G. Nanz, S. Selberherr, H. Pötzl:
"BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts";
Microelectronics Journal, 21, (1990), 5 - 21 doi:10.1016/0026-2692(90)90014-T.

52. H. Kosina, S. Selberherr:
"Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors";
Japanese Journal of Applied Physics, 29, (1990), L2283 - L2285 doi:10.1143/JJAP.29.L2283.

51. E. Langer:
"Fundamental Analysis of Surface Acoustic Wave Propagation";
Archiv für Elektronik und Übertragungstechnik, 44, (1990), 225 - 232.

50. E. Langer:
"Special Issue on "Semiconductor devices and electronic circuit design"";
Electrosoft, 1, (1990), .

49. S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
"The Evolution of the MINIMOS Mobility Model";
Archiv für Elektronik und Übertragungstechnik, 44, (1990), 161 - 172.

48. S. Selberherr, W. Hänsch, M. Seavey, J. Slotboom:
"The Evolution of the MINIMOS Mobility Model";
Solid-State Electronics, 33, (1990), 1425 - 1436 doi:10.1016/0038-1101(90)90117-W.

47. M. Thurner, P. Lindorfer, S. Selberherr:
"Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 1189 - 1197 doi:10.1109/43.62756.

46. M. Thurner, S. Selberherr:
"Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9, (1990), 856 - 867 doi:10.1109/43.57786.

45. G. Hobler, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8, (1989), 450 - 459 doi:10.1109/43.24873.

44. W. Kausel, H. Pötzl, G. Nanz, S. Selberherr:
"Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor";
Solid-State Electronics, 32, (1989), 685 - 709 doi:10.1016/0038-1101(89)90002-6.

43. J.O. Nylander, F. Masszi, S. Selberherr, S. Berg:
"Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity";
Solid-State Electronics, 32, (1989), 363 - 367 doi:10.1016/0038-1101(89)90125-1.

42. S. Selberherr:
"MOS Device Modeling at 77K";
IEEE Transactions on Electron Devices, 36, (1989), 1464 - 1474 doi:10.1109/16.30960.

41. S. Selberherr:
"Process Modeling";
Microelectronic Engineering, 9, (1989), 605 - 610 doi:10.1016/0167-9317(89)90129-9.

40. S. Selberherr, E. Langer:
"Three Dimensional Process and Device Modeling";
Microelectronics Journal, 20, (invited) (1989), 113 - 127 doi:10.1016/0026-2692(89)90126-2.

39. G. Hobler, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation Induced Point Defects";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7, (1988), 174 - 180 doi:10.1109/43.3147.

38. S. Selberherr:
"Computer für Wissenschaft und Forschung";
Österreichische Hochschulzeitung, 5, (invited) (1988), 9 - 10.

37. S. Selberherr:
"Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik";
Österreichische Hochschulzeitung, 7, (invited) (1988), 25.

36. M. Budil, E. Guerrero, T. Brabec, S. Selberherr, H. Pötzl:
"A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon";
COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6, (1987), 37 - 44 doi:10.1108/eb010299.

35. W. Hänsch, S. Selberherr:
"MINIMOS 3: A MOSFET Simulator that Includes Energy Balance";
IEEE Transactions on Electron Devices, 34, (1987), 1074 - 1078 doi:10.1109/T-ED.1987.23047.

34. G. Hobler, E. Langer, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation with Spatial Moments";
Solid-State Electronics, 30, (1987), 445 - 455 doi:10.1016/0038-1101(87)90175-4.

33. A.R. Baghai-Wadji, S. Selberherr, F. Seifert:
"Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain";
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33, (1986), 315 - 317 doi:10.1109/T-UFFC.1986.26834.

32. W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
IEEE Transactions on Electron Devices, 32, (1985), 156 - 167 doi:10.1109/T-ED.1985.21925.

31. W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods";
IEEE Journal of Solid-State Circuits, 20, (1985), 76 - 87 doi:10.1109/JSSC.1985.1052279.

30. P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC-Fabrication Steps";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4, (1985), 384 - 397 doi:10.1109/TCAD.1985.1270136.

29. P. Pichler, W. Jüngling, S. Selberherr, E. Guerrero, H. Pötzl:
"Simulation of Critical IC-Fabrication Steps";
IEEE Transactions on Electron Devices, 32, (1985), 1940 - 1953 doi:10.1109/T-ED.1985.22226.

28. P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl:
"Two-Dimensional Coupled Diffusion Modeling";
Physica B: Condensed Matter, 129, (1985), 187 - 191 doi:10.1016/0378-4363(85)90566-2.

27. J. Demel, S. Selberherr:
"VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran";
Angewandte Informatik, 6, (1984), 244 - 247.

26. W. Jüngling, E. Guerrero, S. Selberherr:
"On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation";
COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3, (1984), 79 - 105.

25. P. Markowich, S. Selberherr:
"A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments";
Matematica Aplicada e Computacional, 3, (1984), 131 - 156.

24. A. Schütz, S. Selberherr, H. Pötzl:
"Modeling MOS-Transistors in the Avalanche Breakdown Regime";
Transactions on Computer Simulation, 1, (invited) (1984), 1 - 14.

23. A. Schütz, S. Selberherr, H. Pötzl:
"Temperature Distribution and Power Dissipation in MOSFETs";
Solid-State Electronics, 27, (1984), 394 - 395 doi:10.1016/0038-1101(84)90175-8.

22. S. Selberherr:
"Process and Device Modeling for VLSI";
Microelectronics Reliability, 24, (invited) (1984), 225 - 257 doi:10.1016/0026-2714(84)90450-5.

21. S. Selberherr, Ch. Ringhofer:
"Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3, (1984), 52 - 64 doi:10.1109/TCAD.1984.1270057.

20. A.F. Franz, G. Franz, S. Selberherr, Ch. Ringhofer, P. Markowich:
"Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 30, (1983), 1070 - 1082 doi:10.1109/T-ED.1983.21261.

19. E. Langer, S. Selberherr, P. Markowich, Ch. Ringhofer:
"Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials";
Sensors and Actuators, 4, (1983), 71 - 76 doi:10.1016/0250-6874(83)85010-0.

18. J. Machek, S. Selberherr:
"A Novel Finite Element Approach to Device Modelling";
IEEE Transactions on Electron Devices, 30, (1983), 1083 - 1092 doi:10.1109/T-ED.1983.21262.

17. P. Markowich, Ch. Ringhofer, E. Langer, S. Selberherr:
"An Asymptotic Analysis of Single-Junction Semiconductor Devices";
MRC Technical Summary Report, 2527, (1983), 1 - 62.

16. P. Markowich, Ch. Ringhofer, S. Selberherr:
"A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices";
MRC Technical Summary Report, 2482, (1983), 1 - 50.

15. P. Markowich, Ch. Ringhofer, S. Selberherr, M. Lentini:
"A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations";
IEEE Transactions on Electron Devices, 30, (1983), 1165 - 1180 doi:10.1109/T-ED.1983.21273.

14. Ch. Ringhofer, S. Selberherr:
"Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs";
MRC Technical Summary Report, 2513, (1983), 1 - 49.

13. H. Goebl, S. Selberherr, W.-D Rase, H. Pudlatz:
"Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique";
Computers and the Humanities, 16, (1982), 69 - 84 doi:10.1007/BF02259737.

12. E. Langer, S. Selberherr, H. Mader:
"A Numerical Analysis of Bulk-Barrier Diodes";
Solid-State Electronics, 25, (1982), 317 - 324 doi:10.1016/0038-1101(82)90141-1.

11. E. Langer, S. Selberherr, H. Mader:
"Numerische Analyse der Bulk-Barrier Diode";
Archiv für Elektronik und Übertragungstechnik, 36, (1982), 86 - 91.

10. P. Markowich, Ch. Ringhofer, S. Selberherr, E. Langer:
"A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device";
MRC Technical Summary Report, 2388, (1982), 1 - 57.

9. A. Schütz, S. Selberherr, H. Pötzl:
"A Two-Dimensional Model of the Avalanche Effect in MOS Transistors";
Solid-State Electronics, 25, (1982), 177 - 183 doi:10.1016/0038-1101(82)90105-8.

8. A. Schütz, S. Selberherr, H. Pötzl:
"Analysis of Breakdown Phenomena in MOSFET's";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1, (1982), 77 - 85 doi:10.1109/TCAD.1982.1269997.

7. S. Selberherr, A. Schütz, H. Pötzl:
"Investigation of Parameter Sensitivity of Short Channel MOSFETs";
Solid-State Electronics, 25, (1982), 85 - 90 doi:10.1016/0038-1101(82)90035-1.

6. S. Selberherr, E. Guerrero:
"Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals";
Solid-State Electronics, 24, (1981), 591 - 593 doi:10.1016/0038-1101(81)90081-2.

5. S. Selberherr, A. Schütz, H. Pötzl:
"Two-Dimensional MOS Transistor Modelling";
European Electronics, 1, (invited) (1981), 20 - 30.

4. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
IEEE Transactions on Electron Devices, 27, (1980), 1540 - 1550 doi:10.1109/T-ED.1980.20068.

3. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - A Two-Dimensional MOS Transistor Analyzer";
IEEE Journal of Solid-State Circuits, 15, (1980), 605 - 615 doi:10.1109/JSSC.1980.1051444.

2. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1)";
Elektronikschau, 9, (1980), 18 - 23.

1. S. Selberherr, A. Schütz, H. Pötzl:
"MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2)";
Elektronikschau, 10, (1980), 54 - 58.