TU Home


Publication Database Home

Publication list for members of
E360 - Institute for Microelectronics
as any persons named in the publication record

147 records


Contributions to Books


147. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
in "ECS Transactions", 80, D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst.

146. I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
"Neumann Series Analysis of the Wigner Equation Solution";
in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 701 - 707 doi:10.1007/978-3-319-23413-7_97.

145. E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome:
"Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices";
in "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", 27, E. Gutierrez-Dominguez (ed); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, 17 - 185 doi:10.1049/PBCS027E_ch2.

144. P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
"Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 120 - 123 doi:10.1109/ULIS.2016.7440067.

143. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films";
in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 695 - 700 doi:10.1007/978-3-319-23413-7_96.

142. V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 226 - 229 doi:10.1109/ULIS.2016.7440094.

141. V. Sverdlov, D. Osintsev, S. Selberherr:
"Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
in "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, (invited) 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531-003.

140. V. Sverdlov, S. Selberherr:
"Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 202 - 205 doi:10.1109/ULIS.2016.7440088.

139. L. Wang, T. Sadi, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
"Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 56 - 59 doi:10.1109/ULIS.2016.7440051.

138. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"A Universal Nonvolatile Processing Environment";
in "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6.

137. M. Bina, K. Rupp:
"The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation";
in "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 197 - 220 doi:10.1007/978-3-319-08994-2_6.

136. J. Cervenka, P. Ellinghaus, M. Nedjalkov:
"Deterministic Solution of the Discrete Wigner Equation";
in "Numerical Methods and Applications", I. Dimov, S. Fidanova, I. Lirkov (ed); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, 149 - 156 doi:10.1007/978-3-319-15585-2_17.

135. J. Cervenka, P. Ellinghaus, M. Nedjalkov, E. Langer:
"Optimization of the Deterministic Solution of the Discrete Wigner Equation";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 269 - 276 doi:10.1007/978-3-319-26520-9_29.

134. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
in "Lecture Notes in Computer Science", 8962, I. Dimov, S. Fidanova, I. Lirkov (ed); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, 27 - 33 doi:10.1007/978-3-319-15585-2_3.

133. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"The Influence of Electrostatic Lenses on Wave Packet Dynamics";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 277 - 284 doi:10.1007/978-3-319-26520-9_30.

132. L. Filipovic, S. Selberherr:
"Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 243 - 250 doi:10.1149/06605.0243ecst.

131. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst.

130. J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
"Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31.

129. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
in "Circuit Design for Reliability", R. Reis, Y. Cao, G. Wirth (ed); Springer New York, 2015, ISBN: 978-1-4614-4077-2, 5 - 19 doi:10.1007/978-1-4614-4078-9_2.

128. A. Makarov, V. Sverdlov, S. Selberherr:
"Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
in "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., (invited) 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001.

127. F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, A. Morhammer, S. Selberherr:
"Free Open Source Mesh Healing for TCAD Device Simulations";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 293 - 300 doi:10.1007/978-3-319-26520-9_32.

126. V. Sverdlov, S. Selberherr:
"Spin-Based CMOS-Compatible Devices";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, (invited) 2015, ISBN: 978-3-319-26519-3, 42 - 49 doi:10.1007/978-3-319-26520-9_4.

125. V. Sverdlov, S. Selberherr:
"Spin-Based Silicon and CMOS-Compatible Devices";
in "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, (invited) 2015, ISBN: 978-1-62332-238-0, 223 - 231 doi:10.1149/06605.0223ecst.

124. M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
"A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 301 - 308 doi:10.1007/978-3-319-26520-9_33.

123. S. E. Tyaginov:
"Physics-Based Modeling of Hot-Carrier Degradation";
in "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 105 - 150 doi:10.1007/978-3-319-08994-2_4.

122. J. Weinbub, P. Ellinghaus, S. Selberherr:
"Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 309 - 316 doi:10.1007/978-3-319-26520-9_34.

121. T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Novel Buffered Magnetic Logic Gate Grid";
in "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5", F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst.

120. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Efficient Calculation of the Two-Dimensional Wigner Potential";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 3 doi:10.1109/IWCE.2014.6865812.

119. P. Ellinghaus, M. Nedjalkov, S. Selberherr:
"Implications of the Coherence Length on the Discrete Wigner Potential";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 3 doi:10.1109/IWCE.2014.6865852.

118. L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors";
in "Transactions on Engineering Technologies", G.-C. Yang, S.-L. Ao, L. Gelman (ed); Springer, 2014, ISBN: 978-94-017-8831-1, 295 - 310 doi:10.1007/978-94-017-8832-8.

117. J. Ghosh, V. Sverdlov, S. Selberherr:
"Spin Diffusion and the Role of Screening Effects in Semiconductors";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865825.

116. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 58 - 61.

115. H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing";
in "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", issued by CRC Press; T. Brozek (ed); CRC Press, 2014, ISBN: 978-1-4822-1490-1, 221 - 259.

114. A. Makarov, V. Sverdlov, S. Selberherr:
"Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
in "Future Information Engineering", G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451.

113. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824.

112. D. Osintsev, V. Sverdlov, S. Selberherr:
"Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
in "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, Switzerland, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7.

111. P. Schwaha, M. Nedjalkov, S. Selberherr, J. M. Sellier, I. Dimov, R. Georgieva:
"Stochastic Alternative to Newton's Acceleration";
in "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2014, ISBN: 978-3-662-43879-4, 178 - 185 doi:10.1007/978-3-662-43880-0_19.

110. J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"The Role of Annihilation in a Wigner Monte Carlo Approach";
in "Large-Scale Scientific Computing", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2014, ISBN: 978-3-662-43879-4, 186 - 193 doi:10.1007/978-3-662-43880-0_20.

109. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
in "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198.

108. V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
"Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33.

107. T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862.

106. S. Ahmed, M. Nedjalkov, D. Vasileska:
"Comparative Study of Various Self-Consistent Event Biasing Schemes for Monte Carlo Simulations of Nanoscale MOSFETs";
in "Theory and Applications of Monte Carlo Simulations", V. Chan (ed); Intech Open Access Publisher, 2013, ISBN: 978-953-51-1012-5, 109 - 133 doi:10.5772/53113.

105. W. Gös, F. Schanovsky, T. Grasser:
"Advanced Modeling of Oxide Defects";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 409 - 446 doi:10.1007/978-1-4614-7909-3_16.

104. T. Grasser:
"The Capture/Emission Time Map Approach to the Bias Temperature Instability";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 447 - 481.

103. A. Makarov, V. Sverdlov, S. Selberherr:
"Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory";
in "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2013, ISBN: 978-1118-44216-6, 93 - 101 doi:10.1002/9781118678107.ch6.

102. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
in "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", issued by The Electrochemical Society; Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed); ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208 doi:10.1149/05305.0203ecst.

101. J. Rodriguez, J. Weinbub, D. Pahr, K. Rupp, S. Selberherr:
"Distributed High-Performance Parallel Mesh Generation with ViennaMesh";
in "Lecture Notes in Computer Science", 7782, P. Manninen, P. Öster (ed); Springer, 2013, ISBN: 978-3-642-36802-8, 548 - 552 doi:10.1007/978-3-642-36803-5_44.

100. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the RD Model";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 379 - 408.

99. J. Weinbub, K. Rupp, S. Selberherr:
"A Flexible Dynamic Data Structure for Scientific Computing";
in "Lecture Notes in Electrical Engineering", 229, G.-C. Yang, S.-L. Ao, L. Gelman (ed); Springer, (invited) 2013, ISBN: 978-94-007-6189-6, 565 - 577 doi:10.1007/978-94-007-6190-2_43.

98. J. Weinbub, K. Rupp, S. Selberherr:
"A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing";
in "Lecture Notes in Computer Science", 7782, P. Manninen, P. Öster (ed); Springer, 2013, ISBN: 978-3-642-36802-8, 563 - 566 doi:10.1007/978-3-642-36803-5_47.

97. O. Baumgartner, Z. Stanojevic, H. Kosina:
"Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers";
in "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 59 - 67.

96. L. Filipovic, S. Selberherr:
"A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 447 - 454 doi:10.1007/978-3-642-29843-1_50.

95. L. Filipovic, S. Selberherr:
"A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator";
in "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 97 - 104 doi:10.1515/9783110293586.97.

94. V. Kysenko, K. Rupp, O. Marchenko, S. Selberherr, A. Anisimov:
"GPU-Accelerated Non-negative Matrix Factorization for Text Mining";
in "Lecture Notes in Computer Science, Vol. 7337", G. Bouma, A. Ittoo, E. Metais, H. Wortmann (ed); Springer, 2012, ISBN: 978-3-642-31177-2, 158 - 163 doi:10.1007/978-3-642-31178-9_15.

93. A. Makarov, V. Sverdlov, S. Selberherr:
"MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242842.

92. A. Makarov, V. Sverdlov, S. Selberherr:
"New Trends in Microelectronics: Towards an Ultimate Memory Concept";
in "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4 doi:10.1109/ICCDCS.2012.6188899.

91. J.-F. Mennemann, A. Jüngel, H. Kosina:
"Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator";
in "ASC Report 17/2012", issued by Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2012, ISBN: 978-3-902627-05-6, 1 - 30.

90. M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz:
"Role of the Physical Scales on the Transport Regime";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 3 doi:10.1109/IWCE.2012.6242848.

89. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242850.

88. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72.

87. V. Palankovski, G. Donnarumma, J. Kuzmik:
"Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation";
in "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", issued by The Electrochemical Society; R. Garg, K. Shenai (ed); ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 223 - 228.

86. V. Palankovski, J. Kuzmik:
"A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications";
in "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", issued by The Electrochemical Society; R. Garg, K. Shenai (ed); ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 291 - 296.

85. K. Rupp, A. Jüngel, T. Grasser:
"A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
in "Lecture Notes in Computer Science, Vol. 7174", R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer, 2012, ISBN: 978-3-642-30396-8, 147 - 157 doi:10.1007/978-3-642-30397-5.

84. K. Rupp, A. Jüngel, T. Grasser:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
in "Progress in Industrial Mathematics at ECMI 2010", R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer, 2012, ISBN: 978-3-642-25099-6, 53 - 59 doi:10.1007/978-3-642-25100-9_7.

83. K. Rupp, P. Lagger, T. Grasser, A. Jüngel:
"Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
in "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242856.

82. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Monte Carlo Investigations of Electron Decoherence due to Phonons";
in "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 203 - 211.

81. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 3 doi:10.1109/IWCE.2012.6242860.

80. P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov:
"Phonon-Induced Decoherence in Electron Evolution";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 472 - 479 doi:10.1007/978-3-642-29843-1_53.

79. A. Starkov, O. Pakhomov, I. Starkov, A. Zaitsev, I. Baranov:
"Principles of Solid-State Cooler on Layered Multiferroics";
in "5th International Conference on Magnetic Refrigeration at Room Temperature", C. V. Muller (ed); Institut International Du Froid, 2012, ISBN: 978-2-91314-994-6, 573 - 581.

78. J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr:
"Towards a Free Open Source Process and Device Simulation Framework";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242867.

77. J. Weinbub, K. Rupp, S. Selberherr:
"Towards Distributed Heterogenous High-Performance Computing with ViennaCL";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 359 - 367 doi:10.1007/978-3-642-29843-1_41.

76. H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina:
"An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices";
in "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3", Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (ed); ECS Transactions, 2011, ISBN: 978-1-56677-864-0, 185 - 192.

75. A. Makarov, V. Sverdlov, S. Selberherr:
"Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations";
in "Lecture Notes in Computer Science, Vol. 6046", I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer, 2011, ISBN: 978-3-642-18465-9, 87 - 94 doi:10.1007/978-3-642-18466-6_9.

74. M. Nedjalkov, D. Querlioz, P. Dollfus, H. Kosina:
"Wigner Function Approach";
in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer, (invited) 2011, ISBN: 978-1-4419-8839-3, 289 - 358 doi:10.1007/978-1-4419-8840-9_5.

73. M. Nedjalkov, S. Selberherr, I. Dimov:
"Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation";
in "Lecture Notes in Computer Science, Vol. 6046", I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer, 2011, ISBN: 978-3-642-18465-9, 95 - 102 doi:10.1007/978-3-642-18466-6_10.

72. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
in "ECS Transactions", 35, Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (ed); ECS, 2011, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806.

71. M. Pourfath, H. Kosina:
"Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors";
in "Encyclopedia of Nanoscience and Nanotechnology", H. Nalwa (ed); American Scientific Publishers, 2011, ISBN: 1-58883-168-x, 541 - 581.

70. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Models";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352.

69. T. Windbacher, V. Sverdlov, S. Selberherr:
"Classical Device Modeling";
in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer, (invited) 2011, ISBN: 978-1-4419-8839-3, 1 - 96 doi:10.1007/978-1-4419-8840-9_1.

68. J. Cervenka, A. Zoric, T. Gurov, G. Arsov:
"GRINKO - Grid e-Infrastructure and Networking with Kosovo";
in "JOINT RESEARCH AND TECHNOLOGY DEVELOPMENT Projects 2007-2010", KAIP, 2010, 150 - 162.

67. W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
"Charge Trapping and the Negative Bias Temperature Instability";
in "Physics and Technology of High-k Materials 8", ECS Transactions, (invited) 2010, ISBN: 978-1-56677-822-0, 565 - 589.

66. M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
"Particle Model of the Scattering-Induced Wigner Function Correction";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 411 - 418 doi:10.1007/978-3-642-12535-5_48.

65. K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
in "ASC Report 10/2010", issued by Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, 1 - 32.

64. V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2010, ISBN: 978-0-470-55137-0, 281 - 291 doi:10.1002/9780470649343.ch24.

63. O. Triebl, T. Grasser:
"Numerical Power/HV Device Modeling";
in "Power/HV MOS Devices Compact Modeling", Springer, (invited) 2010, ISBN: 978-90-481-3045-0, 1 - 32.

62. M. Vasicek, D. Esseni, C. Fiegna, T. Grasser:
"Modeling and Simulation Approaches for Drain Current Computation";
in "Nanoscale CMOS: Innovative Materials, Modeling and Characterization", issued by F. Balestra; Wiley, London, (invited) 2010, ISBN: 978-1-84821-180-3, 259 - 285.

61. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
in "Lecture Notes in Computer Science, Vol. 5910", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2010, ISSN: 0302-9743, 443 - 450 doi:10.1007/978-3-642-12535-5_52.

60. T. Windbacher, V. Sverdlov, S. Selberherr:
"Biotin-Streptavidin Sensitive BioFETs and Their Properties";
in "Biomedical Engineering Systems and Technologies", Springer, 2010, ISBN: 978-3-642-11720-6, 85 - 95 doi:10.1007/978-3-642-11721-3_6.

59. T. Grasser, W. Gös, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability";
in "215th ECS Meeting", R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (ed); ECS Transactions, (invited) 2009, 265 - 287 doi:10.1149/1.3122096.

58. R. Heinzl, P. Schwaha, S. Selberherr:
"Modern Concepts for High-Perfomance Scientific Computing";
in "Software and Data Technologies", J. Filipe, B. Shishkov, M. Helfert, L. Maciaszek (ed); Springer, 2009, ISBN: 978-3-540-88654-9, 89 - 100.

57. T. Grasser, W. Gös, B. Kaczer:
"Towards Engineering Modeling of Negative Bias Temperature Instability";
in "Defects in Microelectronic Materials and Devices", issued by D. Fleetwood, R. Schrimpf, S. Pantelides; Taylor and Francis/CRC Press, (invited) 2008, ISBN: 1420043765, 399 - 436.

56. H. Kosina:
"Nanoelectronic Device Simulation Based on the Wigner Function Formalism";
in "Physics and Modeling of Tera- and Nano-Devices", World Scientific Publishing Co., Singapore, 2008, ISBN: 978-981-277-904-5, 31 - 40.

55. M. Nedjalkov, H. Kosina, D. Vasileska:
"Wigner Ensemble Monte Carlo: Challenges of 2D Nano-Device Simulation";
in "Lecture Notes in Computer Science Vol. 4818", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-80-86407-12-8, 139 - 147.

54. V. Palankovski, M. Wagner, W. Heiss:
"Monte Carlo Simulation of Electron Transport in PbTe";
in "Springer Proceedings in Physics, Vol. 119", Springer-Verlag, Wien - New York, 2008, ISBN: 13978-1-4020-8424-9, 77 - 79.

53. V. Sverdlov, E. Ungersböck, H. Kosina:
"Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
in "Lecture Notes in Computer Science Vol. 4818", Springer-Verlag, Berlin-Heidelberg, 2008, ISBN: 978-80-86407-12-8, 157 - 164.

52. S. Vitanov, V. Palankovski:
"Monte Carlo Study of Electron Transport of InN";
in "Springer Proceedings in Physics, Vol. 119", Springer-Verlag, Wien - New York, 2008, ISBN: 13978-1-4020-8424-9, 97 - 100.

51. T.V. Gurov, E. Atanassov, M. Nedjalkov, I. Dimov:
"Modeling of Carrier Transport in Nanowires";
in "Lecture Notes in Computing Sciences Vol. 4487", Springer-Verlag, Berlin-Heidelberg, 2007, 739 - 746.

50. R. Heinzl, M. Spevak, P. Schwaha, S. Selberherr:
"A High Performance Generic Scientific Simulation Environment";
in "Lecture Notes in Computer Science, Vol. 4699", B. Kaagström, E. Elmroth, J. Dongarra, J. Wasniewski (ed); Springer, 2007, ISBN: 978-3-540-75754-2, 996 - 1005 doi:10.1007/978-3-540-75755-9_117.

49. B. Kaczer, T. Grasser, R. Fernandez, G. Groeseneken:
"Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9", R. Sah, J. Zhang, Y. Kamakura, M. Deen, J. Yota (ed); ECS Transactions, Pennington, (invited) 2007, ISBN: 978-1-56677-552-6, 265 - 281.

48. M. Pourfath, H. Kosina, S. Selberherr:
"Carbon Nanotube Based Transistors: A Computational Study";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1041 - 1042 doi:10.1063/1.2730253.

47. K. Riedling, S. Selberherr:
"A Publication Database for Research Documentation and Performance Evaluation";
in "Innovations 2007", International Network for Engineering Education and Research (iNEER), Arlington, VA, USA, 2007, ISBN: 978-0-9741252-6-8, 365 - 380.

46. M. Spevak, R. Heinzl, P. Schwaha, S. Selberherr:
"A Computational Framework for Topological Operations";
in "Lecture Notes in Computer Science, Vol. 4699", B. Kaagström, E. Elmroth, J. Jackson, J. Wasniewski (ed); Springer, 2007, ISBN: 978-3-540-75754-2, 781 - 790 doi:10.1007/978-3-540-75755-9_95.

45. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
"Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425.

44. V. Sverdlov, E. Ungersböck, H. Kosina:
"Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions";
in "NATO Security through Science Series Vol.2006", Springer-Verlag, Netherlands, 2007, ISBN: 978-1-4020-6378-7, 357 - 362.

43. V. Sverdlov, E. Ungersböck, H. Kosina:
"Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering";
in "Springer Lecture Notes", Springer, 2007, 62 - 63.

42. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1389 - 1390 doi:10.1063/1.2730422.

41. S. Vitanov, M. Nedjalkov, V. Palankovski:
"A Monte Carlo Model of Piezoelectric Scattering in GaN";
in "Lecture Notes in Computer Science, Vol. 4310", Springer-Verlag, Berlin-Heidelberg, 2007, ISBN: 978-3-540-70940-4, 197 - 204.

40. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Modeling of Electron Transport in GaN-Based Materials and Devices";
in "AIP Conference Proceedings, Vol. 893", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1399 - 1400.

39. H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268.

38. A. Gehring, S. Selberherr:
"Tunneling Models for Semiconductor Device Simulation";
in "Handbook of Theoretical and Computational Nanotechnology", issued by Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, 469 - 543.

37. T.V. Gurov, E. Atanassov, I. Dimov, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part II: Stochastic Approach and Grid Implementation";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin/Heidelberg, 2006, ISBN: 3-540-31994-8, 157 - 163.

36. G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr:
"Analysis of Hole Transport in Arbitrarily Strained Germanium";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 443 - 450 doi:10.1149/1.2355842.

35. M. Karner, A. Gehring, S. Holzer, H. Kosina:
"Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin/Heidelberg, 2006, ISBN: 3-540-31994-8, 572 - 577.

34. M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
"Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics";
in "Physics and Technology of High-k Gate Dielectrics III, Vol. 1 No. 5", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (ed); ECS Transactions, 2006, ISBN: 1-56677-444-6, 693 - 703 doi:10.1149/1.2209316.

33. M. Karner, S. Holzer, W. Gös, M. Vasicek, M. Wagner, H. Kosina, S. Selberherr:
"Numerical Analysis of Gate Stacks";
in "Physics and Technology of High-k Gate Dielectrics 4, Vol. 3 No. 3", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (ed); ECS Transactions, 2006, ISBN: 1-56677-503-5, 299 - 308 doi:10.1149/1.2355721.

32. H. Kosina, M. Nedjalkov:
"Wigner Function-Based Device Modeling";
in "Handbook of Theoretical and Computational Nanotechnology", issued by Forschungszentrum Karlsruhe; American Scientific Publishers, Los Angeles, 2006, ISBN: 1-58883-042-x, 731 - 763.

31. H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronics Devices";
in "Frontiers in Electronics", H. Iwai, Y. Nishida, M. Shur, H. Wong (ed); World Scientific Publishing Co., 2006, ISBN: 978-981-256-884-7, 115 - 136 doi:10.1142/S0129156406003576.

30. M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin/Heidelberg, 2006, ISBN: 3-540-31994-8, 149 - 156.

29. M. Pourfath, H. Kosina:
"Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors";
in "Lecture Notes in Computer Science Vol. 3743", Springer-Verlag, Berlin / Heidelberg, 2006, ISBN: 3-540-31994-8, 578 - 585.

28. V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr:
"Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator";
in "Lecture Notes in Computer Science, Vol. 3743", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2006, ISBN: 3-540-31994-8, 594 - 601 doi:10.1007/11666806_68.

27. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 45 - 54 doi:10.1149/1.2355793.

26. E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr:
"Modeling of Advanced Semiconductor Devices";
in "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", issued by The Electrochemical Society; J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (ed); ECS Transactions, (invited) 2006, ISBN: 1-56677-512-4, 207 - 216.

25. M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser:
"Power Output Improvement of SiGe Thermoelectric Generators";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, 1151 - 1162.

24. R. Wittmann, S. Uppal, A. Hössinger, J. Cervenka, S. Selberherr:
"A Study of Boron Implantation into High Ge Content SiGe Alloys";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 667 - 676 doi:10.1149/1.2355862.

23. Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress";
in "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, Vol. 1 No. 1", issued by H.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol; ECS Transactions, Pennington, 2005, ISBN: 1-56677-430-6, 103 - 113.

22. M. Karner, A. Gehring, S. Holzer, H. Kosina:
"On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling";
in "Springer Lecture Notes", Springer, 2005, 33 - 34.

21. M. Nedjalkov:
"Wigner Transport in Presence of Phonons: Particle Models of the Electron Kinetics";
in "From Nanostructures to Nanosensing Applications Volume 160", issued by Societa Italiana Di Fisica; A. D´Amico, G. Balestrino, A. Paoletti (ed); IOS Press, Amsterdam, (invited) 2005, ISBN: 1-58603-527-4, 55 - 103.

20. V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr:
"Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays";
in "Unsolved Problems of Noise and Fluctuations", issued by New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, 177 - 182.

19. T. Grasser:
"Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation";
in "Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II", issued by S.G. Pandalai; Transworld Research Network, (invited) 2004, ISBN: 81-7895-156-8, 423 - 446.

18. R. Sabelka, C. Harlander, S. Selberherr:
"Interconnects and Propagation of High Frequency Signals";
in "Predictive Simulation of Semiconductor Processing", J. Dabrowski, E. Weber (ed); Springer, 2004, ISBN: 3-540-20481-4, 357 - 385.

17. R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
in "SiGe: Materials, Processing, and Devices", issued by The Electrochemical Society; ECS Transactions, 2004, ISBN: 1-56677-420-9, 181 - 192.

16. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

15. H. Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, (invited) 2003, ISBN: 9-812-38607-6, 27 - 69.

14. H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in "Lecture Notes in Computer Science, Vol. 2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 170 - 177.

13. M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
in "Lecture Notes in Computer Science, Vol. 2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 178 - 184.

12. S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in "Lecture Notes in Computer Science, Vol.2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 185 - 193.

11. T. Grasser, S. Selberherr:
"Current Transport Models for Engineering Applications";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2002, ISBN: 0-471-21247-4, 87 - 98.

10. H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
in "Lecture Notes in Computer Science, Vol. 2179", S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2001, ISBN: 3-540-43043-1, 175 - 182.

9. M. Nedjalkov, T.V. Gurov, H. Kosina, P.A. Whitlock:
"Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II";
in "Springer Lecture Notes", Springer, 2001, A-27 - A-28.

8. M. Nedjalkov, T.V. Gurov, H. Kosina, P.A. Whitlock:
"Statistical Algorithms for Simulation of Quantum Kinetics in Semiconductors - Part II";
in "Large-Scale Scientific Computing", S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2001, ISBN: 3-540-43043-1, 183 - 190.

7. E. Langer, S. Selberherr:
"Advanced Models, Applications, and Software Systems for High Performance Computing-Application in Microelectronics";
in "High Performance Scientific and Engineering Computing", H.J. Bungartz, F. Durst, C. Zenger (ed); Springer, (invited) 1999, ISBN: 3-540-65730-4, 291 - 308 doi:10.1007/978-3-642-60155-2_25.

6. C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity and Beyond";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 1999, ISBN: 0-471-32183-4, 313 - 322.

5. E. Langer, S. Selberherr:
"Prozeßsimulation: Stand der Technik";
in "Festkörperprobleme 36", R. Helbig (ed); Vieweg, (invited) 1996, ISBN: 3-528-08043-4, 203 - 243.

4. S. Selberherr, C. Fischer, S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger:
"Device Structures and Device Simulation Techniques";
in "Low-Power HF Microelectronics", A.S. Machado (ed); The Institution of Electrical Engineers, (invited) 1996, ISBN: 0-85296-874-4, 57 - 83.

3. H. Kosina, K. Wimmer, C. Fischer, S. Selberherr:
"Simulation of ULSI Processes and Devices";
in "Computer Aided Innovation of New Materials", M. Doyama et al. (ed); North Holland Publishing Company, (invited) 1991, ISBN: 0-444-88864-0, 723 - 728.

2. S. Selberherr:
"On Modeling MOS-Devices";
in "Process and Device Modeling", W.L. Engl (ed); North Holland Publishing Company, (invited) 1986, ISBN: 0-444-87891-2, 265 - 299.

1. S. Selberherr, A. Schütz, H. Pötzl:
"Two-Dimensional MOS-Transistor Modeling";
in "Process and Device Simulation for MOS-VLSI Circuits", P. Antognetti, D. Antoniadis, R.W. Dutton, W.G. Oldham (ed); Martinus Nijhoff, (invited) 1983, ISBN: 90-247-2824-x, 490 - 581.