A possibility to increase the mobility of carriers in silicon is to apply biaxial tensile or compressive strain. In the case of  substrates, for example, such strain shifts the two-fold degenerate ellipsoids down. Since they contribute to the in-plane transport through the transverse effective mass, total mobility is increased. The Monte Carlo method is used to study the influence of a general conduction band splitting on transport in strained layers grown on arbitrary-oriented relaxed silicon-germanium. Both X and L valley splitting is taken into account. In the case of high degeneracy a pure quantum mechanical effect stemming from the Pauli exclusion principle appears: The kinetics is partially or totally reversed. This effect is taken into consideration by a proper modification of the scattering operator.