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CAD Models

TSI - Sillicon Thickness
TOX - Oxide Thickness
WFIN - Fin Width
HFIN - Fin Height
LG - Gate Lenght
All model-parameters are represented in milimeters.

Planar Devices

MOSFET and Single-Gate

MOSFET Type: MOSFET with TOX 0,9 nm and LG 26 nm1)
Source: Impact of Transistor Architecture MOSFET_meshed
MOSFET_simulated






Single_Gate Type: Single-Gate with TOX 1,2 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors Single_Gate_meshed
Single_Gate_simulated





Non-Planar Devices

Double-Gate

The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel
width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress
short channel effects and leads to higher currents as compared with a MOSFET having only one gate.

Type: Double-Gate FinFET with TOX 1,2 nm, WFIN 40 nm, HFIN 50 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Double_Gate_FinFET2 Type: Double-Gate FinFET with TOX 1,2 nm, WFIN 12 nm, HFIN 24 nm and LG 22 nm
Source: Types of multigate MOSFET Double_Gate_FinFET2_meshed
Double_Gate_FinFET2_simulated






Double_Gate_MOSFET Type: Double-Gate MOSFET with TOX 1,5 nm and LG 25 nm
Source: Double-Gate MOSFET Double_Gate_MOSFET_meshed
Double_Gate_MOSFET_simulated






Double_Gate_MOSFET2 Type: Double-Gate MOSFET with TOX 2 nm and LG 20 nm
Source: Double-Gate MOSFET Double_Gate_MOSFET2_meshed
Double_Gate_MOSFET2_simulated






Double_Gate_MOSFET3 Type: Double-Gate MOSFET with TOX 1 nm and LG 5,6 nm
Source: Nano Devices (SILVACO) Double_Gate_MOSFET3_meshed
Double_Gate_MOSFET3_simulated






Double_Gate_MOSFET_with_asymmetric_oxide_thickness Type: Double-Gate with asymmetric oxide thickness with TOX-Top 2 nm, TOX-Bottom 3 nm and LG 20 nm
Source: Double-Gate SOI Devices Double_Gate_MOSFET_asymmetric_meshed
Double_Gate_MOSFET_asymmetric_simulated






Tri Gate

In a tri-gate transistor, the gate surrounds the channel on all three sides and has much better control so that all the charge below
the transistor is removed (i.e. fully depleted). The stronger control decreases sub-threshold leakage, so the transistor is much better
at shutting off. This reduces (or eliminates) dopant variability as well, because less (or no) doping is needed to control the channel.

Tri_Gate2 Type: Tri-Gate with TOX 1 nm and LG 5,6 nm
Source: Nano Devices (SILVACO) Tri_Gate2_meshed
Tri_Gate2_simulated






Tri_Gate3 Type: Tri-Gate with TOX 1,2 nm, WFIN 12 nm, HFIN 15 nm and LG 22 nm
Source: Types of multigate MOSFET Tri_Gate3_meshed
Tri_Gate3_simulated






Tri_Gate4 Type: Tri-Gate with TOX 1,2 nm, WFIN 71,4 nm, HFIN 41,7 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Tri_Gate5 Type: Tri-Gate with TOX 1,2 nm, WFIN 55 nm, HFIN 36 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Bulk_Tri_Gate Type: Bulk Tri-Gate with TOX 1,2 nm, WFIN 12 nm, HFIN 15 nm and LG 22 nm
Source: Types of multigate MOSFET Bulk_Tri_Gate_meshed
Bulk_Tri_Gate_simulated






Bulk_Tri_Gate2 Type: Bulk Tri-Gate with TOX 0.85 nm, WFIN 8 nm, Tapering Angle of 84° and LG 24 nm
Source: Impact of Transistor Architecture





All-Around-Gate

Gate-all-around FETs are similar in concept to FinFETs except
that the gate material surrounds the channel region on all sides.

All_Around_Gate Type: All-Around-Gate with TOX 1 nm and LG 5,6 nm
Source: Nano Devices (SILVACO)





All_Around_Gate2 Type: All-Around-Gate with TOX 1,2 nm, WFIN 12 nm, HFIN 15 nm and LG 22 nm
Source: Types of multigate MOSFET





Four_Gate Type: Four-Gate with TOX 1 nm and LG 5,6 nm
Source: Nano Devices (SILVACO)  Four_Gate_meshed
Four_Gate_simulated





FlexFET

FlexFET is a SOI IDG-CMOS technology with a damascene metal top gate
and an implanted JFET bottom gate that are self-aligned in a gate trench.

FlexFET Type: FlexFET with TSI 4 nm, TOX 11 nm and LG 32 nm
Source: Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor





Special Gate-Form Devices

Omega_Gate Type: Omega-Gate with TOX 1,2 nm, WFIN 10 nm, HFIN 12 nm and LG 22 nm
Source: Types of multigate MOSFET Omega_Gate_meshed
Omega_Gate_simulated






Pi_Gate Type: Pi-Gate with TOX 1,2 nm, WFIN 10 nm, HFIN 12 nm and LG 22 nm
Source: Types of multigate MOSFET Pi_Gate_meshed
Pi_Gate_simulated






FreeCAD Tutorials

The following tutorials have been created using the screen-recording software Kazam.

Double-Gate MOSFET

Tri-Gate

1) The real-parameters of all transistors are in nanometers
cad_models.1414263800.txt.gz · Last modified: 2014/10/25 19:03 by resutik