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device_colletion

Device Collection

TSI - Sillicon Thickness
TOX - Oxide Thickness
WFIN - Fin Width
HFIN - Fin Height
LG - Gate Lenght
All model-parameters are represented in milimeters.

Planar Devices

MOSFET and Single-Gate

Type: MOSFET with TOX 0,9 nm and LG 26 nm1)
Source: Impact of Transistor Architecture





Type: Single-Gate with TOX 1,2 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Non-Planar Devices

Double-Gate

The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel
width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress
short channel effects and leads to higher currents as compared with a MOSFET having only one gate.

Type: Double-Gate FinFET with TOX 1,2 nm, WFIN 40 nm, HFIN 50 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Type: Double-Gate FinFET with TOX 1,2 nm, WFIN 12 nm, HFIN 24 nm and LG 22 nm
Source: Types of multigate MOSFET





Type: Double-Gate MOSFET with TOX 1,5 nm and LG 25 nm
Source: Double-Gate MOSFET





Type: Double-Gate MOSFET with TOX 2 nm and LG 20 nm
Source: Double-Gate MOSFET





Type: Double-Gate MOSFET with TOX 1 nm and LG 5,6 nm
Source: Comparison of 3-Dimensional Quantum Effects in Nano Devices





Type: Double-Gate with asymmetric oxide thickness with TOX-Top 2 nm, TOX-Bottom 3 nm and LG 20 nm
Source: Double-Gate SOI Devices





Tri Gate

In a tri-gate transistor, the gate surrounds the channel on all three sides and has much better control so that all the charge below
the transistor is removed (i.e. fully depleted). The stronger control decreases sub-threshold leakage, so the transistor is much better
at shutting off. This reduces (or eliminates) dopant variability as well, because less (or no) doping is needed to control the channel.

Type: Tri-Gate with TOX 1 nm and LG 5,6 nm
Source: Comparison of 3-Dimensional Quantum Effects in Nano Devices





Type: Tri-Gate with TOX 1,2 nm, WFIN 12 nm, HFIN 15 nm and LG 22 nm
Source: Types of multigate MOSFET





Type: Tri-Gate with TOX 1,2 nm, WFIN 71,4 nm, HFIN 41,7 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Type: Tri-Gate with TOX 1,2 nm, WFIN 55 nm, HFIN 36 nm and LG 60 nm
Source: Advanced Depleted-Substrate Transistors





Type: Bulk Tri-Gate with TOX 1,2 nm, WFIN 12 nm, HFIN 15 nm and LG 22 nm
Source: Types of multigate MOSFET





Type: Bulk Tri-Gate with TOX 0.85 nm, WFIN 8 nm, Tapering Angle of 84° and LG 24 nm
Source: Impact of Transistor Architecture





All-Around-Gate

Gate-all-around FETs are similar in concept to FinFETs except
that the gate material surrounds the channel region on all sides.

Type: All-Around-Gate with TOX 1 nm and LG 5,6 nm
Source: Comparison of 3-Dimensional Quantum Effects in Nano Devices





Type: All-Around-Gate with TOX 1,2 nm, WFIN 12 nm, HFIN 15 nm and LG 22 nm
Source: Types of multigate MOSFET





Type: Four-Gate with TOX 1 nm and LG 5,6 nm
Source: Comparison of 3-Dimensional Quantum Effects in Nano Devices





FlexFET

FlexFET is a SOI IDG-CMOS technology with a damascene metal top gate
and an implanted JFET bottom gate that are self-aligned in a gate trench.

Type: FlexFET with TSI 4 nm, TOX 11 nm and LG 32 nm
Source: Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor





Special Gate-Form Devices

Type: Omega-Gate with TOX 1,2 nm, WFIN 10 nm, HFIN 12 nm and LG 22 nm
Source: Types of multigate MOSFET






Type: Pi-Gate with TOX 1,2 nm, WFIN 10 nm, HFIN 12 nm and LG 22 nm
Source: Types of multigate MOSFET






FreeCAD Tutorials

The following tutorials have been created using the screen-recording software Kazam.

Double-Gate MOSFET

Tri-Gate

1) The real-parameters of all transistors are in nanometers
device_colletion.txt · Last modified: 2014/09/17 13:54 by viennastar