Join us on Thursday, April 18^th at 2PM, as we extend a warm welcome to Prof. Mark Kushner, a world-renowned professor of Plasma Physics and the Director of the Michigan Institute for Plasma Science and Engineering.

The importance of understanding high aspect ratio (HAR) plasma etching cannot be understated, as it has become a crucial step for fabricating high-density memory structures, 3D logic components, and deep trench isolation. In his presentation, Prof. Kushner will deliver a comprehensive review of current advancements in modeling HAR etching, focusing on very-low-frequency biases, voltage waveform tailoring, machine-learning-derived reaction mechanisms, and in-feature engineering to optimize particle transport within the feature.

If you are interested in learning more about "Model Based Approaches to Optimizing High Aspect Ratio Plasma Etching," a project supported by Samsung Electronics, Tokyo Electron US , Lam Research, and the US National Science Foundation, we invite you to join us on April 18^th at 2PM in CD 05 20 ( Fakultät für Elektrotechnik und Informationstechnik - ETIT Building).

Don't miss this opportunity to engage with one of the foremost authorities in Plasma Science!