Team

Director

Viktor Sverdlov received his Master of Science and PhD degrees in physics from the State University of St.Petersburg, Russia, in 1985 and 1989, respectively. From 1989 to 1999 he worked as a staff research scientist at the V.A.Fock Institute of Physics, St.Petersburg State University. During this time, he visited ICTP (Italy, 1993), the University of Geneva (Switzerland, 1993-1994), the University of Oulu (Finland,1995), the Helsinki University of Technology (Finland, 1996, 1998), the Free University of Berlin (Germany, 1997), and NORDITA (Denmark, 1998). In 1999, he became a staff research scientist at the State University of New York at Stony Brook. He joined the Institute for Microelectronics, Technische Universität Wien, in 2004. His scientific interests include device simulations, computational physics, solid-state physics, and nanoelectronics.

Phone: +43 1 58801-36033

Administration

Diana Pop was born in Brasov, Romania. She received the bachelor’s degree in applied physics from Transylvania University of Brasov Romania, the master’s degree in remote engineering and the master of arts following the IBM study at FH Kärnten, Austria, in 2009, 2011 and 2016 respectively. From 2009 to 2011 Diana was with IEEE Women in Engineering and in 2009 she was a visiting research engineer at Massachusetts Institute of Technology, USA. Diana is currently employed as project manager at the Institute for Microelectronics, where she is in charge of the European and national funded projects and part of the administration of the institute. She joined the CDL for Nonvolatile Memory and Logic in October 2018 and is responsible for financial and organizational topics.

Petra Kamptner-Jonas born in Vienna, Austria. She has over 30 years of experience in the private sector of which almost 20 years she was in a leading position. Petra is currently employed as project support at the Institute for Microelectronics. She joined the CDL for Nonvolatile Memory and Logic teams in April 2021 and is supporting the team members with administrative tasks.


Phone: +43-1-58801-36012

Postdoctoral Researchers

Roberto L. de Orio studied electrical engineering at the University of Campinas (Unicamp), where he received a Bachelor degree in 2004 and a Master degree in 2006. He joined the Institute for Microelectronics in October 2006, where he received his doctoral degree in 2010 and worked as a post-doctoral researcher until 2013 focused on modeling and simulation of electromigration and reliability issues in interconnects of integrated circuits. From 2014 to 2018 he was Assistant Professor at the Faculty of Electrical and Computer Engineering of Unicamp. In October 2018 he rejoined the Institute for Microelectronics as a research scientist on non-volatile magnetic memory devices.


PhD Students

Mario Bendra was born in 1993 in Steyr, Austria. He received his BSc degree in Mechanical Engineering from the University of Applied Sciences Upper Austria in 2017. After an exchange semester at the University of the Sunshine Coast, Australia in 2018, he received the degree of Diplomingenieur in Mechanical Engineering from the University of Applied Sciences Upper Austria in 2019. Mario joined the Institute for Microelectronics in October 2020, where he is working towards his doctoral degree focusing on developing and implementing advanced computational approaches to simulate and optimize spin-transfer torque magnetoresistive memories.

Phone: +43 1 58801-36072

Johannes Ender was born in 1988 in Hohenems, Austria. In 2013 he finished his Master’s studies at the University of Applied Sciences in Vorarlberg. After working in industry for three years he pursued the Master’s studies of Computational Science at the University of Vienna. In November 2018 he joined the Institute for Microelectronics where he started his PhD studies researching the simulation of non-volatile magnetic memory devices.

 

Tomáš Hadamek was born in Opava, Czech Republic, in 1992. He received his Bachelor degree in Mechatronics from Brno University of Technology in 2015. After an exchange year at the Norwegian University of Science and Technology, Norway, he enrolled in a Master program therein, receiving his Master’s degree (MSc) in Physics in November 2018. In addition to his expertise in condensed-matter physics, Tomáš has previous experience working in the fields of numerical acoustics and robotics. Tomáš joined the Institute for Microelectronics am in July 2020, where he is working towards his doctoral degree. His research in NovoMemLog is focused on micromagnetic simulations for non-volatile magnetic memory devices.

Nils Petter Jørstad was born in Warsaw, Poland, in 1995. He received his Bachelor’s degree in Physics at the Norwegian University of Science and Technology (NTNU), Norway, in 2019. After a summer internship at Manipal University in Jaipur, India, he enrolled in the Master’s program in Physics at NTNU. He obtained his Master’s degree in 2021, specializing in computational physics. Nils joined the Institute for Microelectronics in September 2021, where he is pursuing a PhD degree focusing on the implementation of spin and magnetization dynamics in simulations of non-volatile magnetic memory devices.

Bernhard Pruckner was born in 1994 in Vienna. He received his BSc degree in Technical Physics at the TU Wien in 2017. After completing his BSc degree, Bernhard was offered an exchange internship at Instituto Superior Tecnico in Lisbon where he was modeling laser-plasma interactions using a finite difference method. He continued his study at the TU Wien simultaneously working on his Master thesis at the Austrian Institute of Technology on coupled finite volume – finite element approach for simulating solidification processes in aluminum alloys. He successfully defended the thesis at the TU Wien in 2020 and received his Masters degree in Technical Physics. After working at the Division of Nuclear Medicine at AKH Wien he joined the Institute for Microeletronics in December 2022, where he is pursuing a PhD degree in micromagnetic simulations for non-volatile magnetic memory devices.