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application/pdfIEEEIEEE Transactions on Device and Materials Reliability;2018;18;2;10.1109/TDMR.2018.2813063BTICEThysteresisSiCthreshold voltageUnderstanding BTI in SiC MOSFETs and Its Impact on Circuit OperationKatja PuschkarskyHans ReisingerThomas AichingerWolfgang GustinTibor Grasser
IEEE Transactions on Device and Materials Reliability144 June 201821810.1109/TDMR.2018.2813063153
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