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application/pdfIEEE2019 IEEE International Reliability Physics Symposium (IRPS);2019; ; ; hot-carrier degradationnanowire FETscarrier energy distribution functioninterface defectsTCADimpact ionizationFull (<tex>$V_{\mathrm{g}},\ V_{\mathrm{d}}$</tex>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETsMichiel VandemaeleBen KaczerStanislav TyaginovZlatan StanojevicAlexander MakarovAdrian ChasinErik BuryHans MertensDimitri LintenGuido Groeseneken
2019 IEEE International Reliability Physics Symposium (IRPS)1 March 20197
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