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application/pdfIEEEIEEE Transactions on Electron Devices;2019;66;11;10.1109/TED.2019.2938262Bias temperature instability (BTI)capture–emission-time (CET)high temperature gate stress (HTGS)hysteresisSiCReview on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityK. PuschkarskyT. GrasserT. AichingerW. GustinH. Reisinger
IEEE Transactions on Electron Devices4604 Nov. 2019116610.1109/TED.2019.29382624616
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