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application/pdfIEEEIEEE Transactions on Device and Materials Reliability;2019;19;2;10.1109/TDMR.2019.2913258NBTIPBTImulti-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Vth</italic>replacement gateCMOSBTI modelsaging simulationsOn the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTIJ. FrancoZ. WuG. RzepaL.-A. RagnarssonH. DekkersA. VandoorenG. GroesenekenN. HoriguchiN. CollaertD. LintenT. GrasserB. Kaczer
IEEE Transactions on Device and Materials Reliability268 June 201921910.1109/TDMR.2019.2913258274
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