Activities
Erasmus Langer
Siegfried Selberherr
Preface
Bindu Balakrishna Compact Modeling of Negative Bias Temperature Instability
Oskar Baumgartner Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices
Hajdin Ceric Three Dimensional Simulation of Electromigration Induced Voids
Johann Cervenka Three-Dimensional Device Simulation of a DotFET
Otmar Ertl Development of a Level Set Framework for Topography Simulation
Wolfgang Gös Impact of Quantum Effects on Charge Trapping in NBTI
Klaus-Tibor Grasser A Two Stage Model for Bias Temperature Instability
Philipp Hehenberger Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation
René Heinzl An Algebraic Topology Library
Hans Kosina Physical Modeling of Semiconductor Nanostructures
Goran Milovanovic Quantum Cascade Lasers
Neophytos Neophytou Modeling of Nanoscale Devices for Electronic and Thermoelectric Applications
Roberto Orio The Effect of Microstructure on Electromigration
Vassil Palankovski Analysis and Simulation of Advanced Heterostructure Devices
Mahdi Pourfath Analysis and Simulation of Graphene Nanoribbon Devices
Karl Rupp The Finite Element Method in Multiphysics Problems and Semiconductor Equations
Franz Schanovsky Atomistic Defect-Modeling in Gate Oxides
Philipp Schwaha Scattering Induced Wigner Corrections
Ivan Starkov The Modeling of Hot Carrier Reliability
Franz Stimpfl Parallel Multi-Segment Mesh Generation
Viktor Sverdlov Electron Subband Structure and Transport Enhancement in Strained Silicon Films and Surface Layers
Oliver Triebl Hot Carrier Reliability Issues in High-Voltage and Power Semiconductor Devices
Stanislav Tyaginov Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics
Martin-Thomas Vasicek Advanced Macroscopic Transport Models
Stanislav Vitanov Simulation of Novel Heterostructure Field-Effect Transistors
Paul-Jürgen Wagner Negative Bias Temperature Stress and Flicker Noise
Thomas Windbacher Biologically Sensitive Field-Effect Transistors
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