Activities Erasmus Langer Siegfried Selberherr Preface Oskar Baumgartner VSP, an Efficient Design Tool for Quantum Cascade Lasers Markus Bina Reliability and Variability in MOS Devices Hajdin Ceric Atomistic Methods for Analysis of Electromigration Johann Cervenka Simulation of Process Variations of LDMOS Transistors Lado Filipovic Process Simulations using the Level Set Method with Monte Carlo Wolfgang Gös Gate Current Fluctuations in Nanoscale Devices Klaus-Tibor Grasser On the Frequency Dependence of the Bias Temperature Instability Hossein Karamitaheri Thermoelectric Engineering of Graphene Antidot Lattices Hans Kosina Numerical Modeling of Nanoelectronic Devices Hiwa Mahmoudi Spintronic Devices for Novel Memristive Sensing Schemes and Stateful Logic Applications Alexander Makarov Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations Marian Molnar Simulation of High Electron Mobility Transistors Mahdi Moradinasab Optical Properties of Graphene Nanoribbons Mihail Nedjalkov Physical Scales in the Wigner-Boltzmann Equation Neophytos Neophytou Modeling of Nanoscale Devices for Thermoelectric Applications Roberto Orio Electromigration Lifetime Extrapolation for Copper Dual-Damascene Interconnects Dmitry Osintsev Current and Conductance Modulation at Elevated Temperatures in Silicon and InAs-Based Spin Field-Effect Transistors Vassil Palankovski Analysis and Simulation of Advanced Heterostructure Devices Mahdi Pourfath Optical Properties of Graphene Nanoribbons Embedded in Boron Nitride Karl Rupp Three-Dimensional Simulation of Semiconductor Devices by Solving the Boltzmann Transport Equation Franz Schanovsky The Microscopic Limit of the Reaction-Diffusion Model Anderson Singulani Thermo-Mechanical Simulation of an Open TSV Technology Zlatan Stanojevic Convergent Modeling of Optoelectronic Nanostructures Ivan Starkov Accurate Modeling of Hot-Carrier Degradation Viktor Sverdlov Modeling Silicon Spintronic Devices Oliver Triebl Efficient Hot-Carrier Degradation Modeling using Macroscopic Transport Equations Stanislav Tyaginov An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation Paul-Jürgen Wagner Assessment of the Loss of Recoverable Component of NBTI Michael Waltl Bias Temperature Instability Parameter Extraction from the Time Dependent Defect Spectroscopy Josef Weinbub Parallel Task Graph Execution Framework for Semiconductor Device Simulation Thomas Windbacher Spintronics – Progressing Towards Future Memory Devices and Fully Nonvolatile Processing Systems Wolfhard Zisser Electromigration Simulations at the Atomistic Level
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