Erasmus Langer
Siegfried Selberherr
Oskar Baumgartner
Markus Bina
Hajdin Ceric
Johann Cervenka
Raffaele Coppeta
Lado Filipovic
Lidija Filipovic
Wolfgang Gös
Klaus-Tibor Grasser
Hossein Karamitaheri
Hans Kosina
Hiwa Mahmoudi
Alexander Makarov
Mahdi Moradinasab
Mihail Nedjalkov
Neophytos Neophytou
Roberto Orio
Dmitry Osintsev
Mahdi Pourfath
Florian Rudolf
Franz Schanovsky
Anderson Singulani
Zlatan Stanojevic
Viktor Sverdlov
Stanislav Tyaginov
Michael Waltl
Josef Weinbub
Yannick Wimmer
Thomas Windbacher
Wolfhard Zisser

Viktor Sverdlov
Privatdoz. MSc PhD
Viktor Sverdlov received his MSc and PhD degrees in physics from the State University of St.Petersburg, Russia, in 1985 and 1989, respectively. From 1989 to 1999 he worked as a staff research scientist at the V.A.Fock Institute of Physics, St.Petersburg State University. During this time, he visited ICTP (Italy, 1993), the University of Geneva (Switzerland, 1993-1994), the University of Oulu (Finland,1995), the Helsinki University of Technology (Finland, 1996, 1998), the Free University of Berlin (Germany, 1997), and NORDITA (Denmark, 1998). In 1999, he became a staff research scientist at the State University of New York at Stony Brook. He joined the Institute for Microelectronics at the Technische Universität Wien, in 2004. In May 2011 he received the venia docendi in microelectronics. His scientific interests include device simulations, computational physics, solid-state physics, and nanoelectronics.

Modeling Spin-Based Devices in Silicon

Continuous miniaturization of CMOS devices has allowed the extraordinary increase in performance of integrated circuits to become a magnificent reality. Numerous tough problems were solved on this exciting journey; however, growing technological challenges and soaring costs will gradually bring CMOS scaling to an end. This puts foreseeable limitations on future performance improvements, causing research on alternative technologies and computational principles to become paramount. The spin of an electron possesses several exciting properties suitable for future devices. It is characterized by two projections on a chosen axis – up or down, and it can change its orientation rapidly by utilizing an amazingly small amount of energy. Employing spin, as a compliment to electron charge, opens new exciting opportunities for developing conceptually new non-volatile nanoelectronic devices for future low power applications.
Silicon, the main material of microelectronics, is characterized by weak spin-orbit interaction and zero-spin nuclei, which gives rise to a long spin lifetime. This makes silicon perfectly suited for spin-driven applications. Spin propagation through an undoped 350μm thick silicon wafer supports the potential to fabricate silicon spin-based devices in the near future. However, the relatively large spin relaxation experimentally observed in electrically-gated lateral-channel silicon structures might become an obstacle in realizing spin driven devices, prompting an urgent need for a deeper understanding of the fundamental spin relaxation mechanisms in silicon.
We utilize a spin-dependent k·p Hamiltonian, where only the [001] valleys are included. Without strain the unprimed subbands are degenerate along the [100] and [010] directions. This degeneracy produces substantial mixing between the spin-up and spin-down states from the opposite valleys, resulting in hot spots characterized by strong spin relaxation (figure 1). In strained samples the hot spots are moved away from the center of the two-dimensional Brillouin zone (figure 2), which reduces their contribution to spin relaxation. Thus, strain used to enhance the on-current in nano-CMOS can also be used to boost spin lifetime.

Figure 1. Spin relaxation hot spots in relaxed silicon films.

Figure 2. Spin relaxation hot spots in strained silicon films.

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