Stanislav Tyaginov was born in Leningrad (now Saint-Petersburg) in 1978. He received his MSc degree in physics (specialization: the physics of semiconductors) in 2002 and his doctoral
degree in physics in 2006 (his PhD was devoted to the problem of the impact of insulator thickness non-uniformities on MOS tunnel structure characteristics). He joined the Institute for
Microelectronics in January 2008 as a post-doc researcher. His scientific interests include the modeling of HCI-related degradation and TDDB as well as tunneling phenomena in MOS devices.