|Worked for the IµE until December 31, 2017|
Thomas Windbacher was born in Mödling, Austria, in 1979. He studied physics at the Technische Universität Wien, where he received the degree of Diplomingenieur in
October 2006. He joined the Institute for Microelectronics in October 2006 and finished his doctoral degree on engineering gate stacks for field-effect transistors in 2010. From 2010
until the beginning of 2012 he worked as a patent attorney candidate in Leoben. In March 2012 he rejoined the Institute for Microelectronics, where he currently works on the modeling and
simulation of magnetic device structures.