D I S S E R T A T I O N


SiC Semiconductor Devices
Technology, Modeling, and Simulation


ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften

eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik und Informationstechnik
von


Tesfaye Ayalew


Lorenz Müller Gasse 1A/225
A-1200 Wien, Österreich

Matr. Nr. 9427747
geboren am 12. Juni 1966 in Addis Ababa, Äthiopien


Wien, im Januar 2004

• Kurzfassung
• Abstract
• Acknowledgments
• Contents
• List of Figures
• List of Tables
• List of Acronyms
• List of Symbols
  • Physical Quantities
  • Physical Constants
  
  
• 1. Introduction
  • 1.1 History of SiC
  • 1.2 SiC Semiconductor Crystal Growth
  • 1.3 SiC Physical and Electrical Properties
  • 1.4 SiC Device Applications and Benefits
  • 1.5 SiC Device Numerical Simulation
  • 1.6 Scope of the Dissertation
  
  
• 2. SiC Technology
  • 2.1 SiC Material Properties
    • 2.1.1 Crystallography
    • 2.1.2 Electrical Properties
  • 2.2 SiC Device Applications
    • 2.2.1 High Temperature Device Operation
    • 2.2.2 High Power Device Operation
    • 2.2.3 High Frequency Device Operation
    • 2.2.4 Optoelectronic Device Operation
  • 2.3 SiC Semiconductor Crystal Growth
    • 2.3.1 Historical Lack of Wafers
    • 2.3.2 Sublimation Growth of Wafers
    • 2.3.3 Epitaxy
  • 2.4 SiC Device Fundamentals
    • 2.4.1 Choice of Polytype for Devices
    • 2.4.2 Selective Doping- Ion Implantation
  • 2.5 SiC Contacts and Interconnect
    • 2.5.1 Ohmic Contacts
    • 2.5.2 Schottky Contacts
  • 2.6 SiC Patterned Etching
  • 2.7 SiC Insulators
  • 2.8 SiC Device Packaging
  
  
• 3. SiC Physical Modeling
  • 3.1 Electronic Transport Model
    • 3.1.1 Basic Semiconductor Equations
    • 3.1.2 Drift-Diffusion Current Equations
    • 3.1.3 Hydrodynamic Transport Equations
    • 3.1.4 Lattice Heat Flow Equation
    • 3.1.5 Quasi-Fermi Potential
    • 3.1.6 Metal-Semiconductor Contacts
    • 3.1.7 Insulator-Metal Contact
    • 3.1.8 Semiconductor-Insulator Interface
  • 3.2 Electronic Band Structure
    • 3.2.1 Bandgap-Energy
    • 3.2.2 Effective Masses and Intrinsic Carrier Density
    • 3.2.3 Bandgap Narrowing
  • 3.3 Carrier Mobility
    • 3.3.1 Low-Field Carrier Mobility
    • 3.3.2 Mobility Degradation due to Scattering
    • 3.3.3 High-Field Mobility and Velocity Saturation
  • 3.4 Dielectric and Thermal Properties
    • 3.4.1 Dielectric Permittivity
    • 3.4.2 Thermal Properties
  • 3.5 Generation and Recombination
    • 3.5.1 Shockley-Read-Hall Recombination
    • 3.5.2 Auger Recombination
    • 3.5.3 Impact Ionization
  • 3.6 Incomplete Ionization
  
  
• 4. SiC Device Simulation
  • 4.1 State-of-the-Art SiC Devices
  • 4.2 Device Design Considerations
  • 4.3 Simulation Considerations
  • 4.4 Rectifiers
    • 4.4.1 Schottky Barrier Diodes
    • 4.4.2 PiN Junction Diodes
    • 4.4.3 Merged PiN Schottky Diodes
  • 4.5 Unipolar Transistors
    • 4.5.1 UMOSFET
    • 4.5.2 DMOSFET
    • 4.5.3 ACCUFET
    • 4.5.4 MESFET
  
  
• 5. Summary and Conclusions
• A. Summary of Model Parameters
• B. Best Reported SiC Devices
• C. MESFET Operation
  • C.1 IV Characteristics
  • C.2 RF Performance
  
  
• Bibliography
• List of Publications
• Curriculum Vitae
• About this document ...

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation