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3.3 Carrier Mobility

The carrier mobilities $ \mu_n$ and $ \mu_p$ account for the scattering mechanisms in carrier transport. In this section a large number of experimental and Monte Carlo (MC) simulation results reported to date have been evaluated, and serve as the basis for the model development. The model describes the dependence of the carrier mobility on the doping concentration, temperature and electric field.
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T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation