[1] O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, and T. Grasser, “Direct Tunneling and Gate Current Fluctuations,” in Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 17–20, 2013.
[2] M. Bina, T. Aichinger, G. Pobegen, W. Gös, and T. Grasser, “Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model,” in Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011), pp. 27–31, 2011.
[3] M. Bina, K. Rupp, S. Tyaginov, O. Triebl, and T. Grasser, “Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation,” in Proceedings of the 2012 IEEE International Electron Devices Meeting (IEDM), pp. 713–716, 2012.
[4] M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, and T. Grasser, “Simulation of Reliability on Nanoscale Devices,” in Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices, pp. 109–112, 2012.
[5] J. Franco, B. Kaczer, M. Toledano-Luque, P. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, and T. Grasser, “Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias,” in Conference Proceedings of International Reliability Physics Symposium (IRPS 2013), pp. 1–6, 2013.
[6] W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, and T. Grasser, “Understanding Correlated Drain and Gate Current Fluctuations,” in Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits, pp. 51–56, 2013.
[7] Y. Illarionov, S. Tyaginov, M. Bina, and T. Grasser, “A method to determine the lateral trap position in ultra-scaled MOSFETs,” in Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM), pp. 728–729, 2013.
[8] B. Kaczer, J. Franco, M. Toledano-Luque, P. J. Roussel, M. F. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, and G. Groeseneken, “The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes,” in Conference Proceedings of International Reliability Physics Symposium (IRPS 2012), 2012.
[9] K. Rupp, C. Jungemann, M. Bina, A. Jüngel, and T. Grasser, “Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation,” in Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices, pp. 19–22, 2012.
[10] M. Bina, “Extension of a Parallel Nonlinear Finite Element Simulation Software for Human Bone,” Master’s thesis, Institut für Leichtbau und Struktur-Biomechanik, 2013.
[11] M. Bina, “Simulation of Interface States Generated During Stress in MOSFETs,” Master’s thesis, Institut für Mikroelektronik, 2010.