5.3  Random Discrete Doping and a SHE of the BTE

To test the hypothesis from Section 5.2.3 the density gradient quantum correction model as well as the random discrete dopant algorithm detailed in Section 5.1.1 have been employed. As a proof of concept a n-channel MOSFET in inversion has been simulated using ViennaSHE  [65] (cf. Figure 5.16).


PIC

Figure 5.16: A 25nm n-channel MOSFET simulated using SHE, density gradient and random discrete doping in inversion. The MOSFET featured a channel doping of ND = 5 × 1018cm-3 and an effective oxide thickness of 1nm. The potential fluctuations are clearly visible.