5.3.2 Fitting Procedure
 
In the previous section the most critical parameters for the intrinsic g_{m max} have been identified. The results are also applicable to the extrinsic characteristics. The basic problem of the fitting procedure is, that the set of unknowns is large enough that a given characteristics can be modeled by different combinations of geometry and model parameters. For instance a certain current density j can be obtained by different products of carrier concentrations and velocities . Therefore as many as possible different characteristics have to be modeled with one consistent set of parameters to get confidence for a simulation set up.

The characteristics used in the following are the drain current and the gate capacitances versus the terminal voltages as well as electron transport properties obtained from Monte Carlo simulations. This way important parameters can be separated from each other and uncertainties can be reduced substantially.
 

• 5.3.2.1 Simulation of the Transfer Characteristics
• 5.3.2.2 Simulation of the Output Characteristics
• 5.4 Model Parameters used for Simulation
• 5.5 Investigated Parameters

   
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