Contents

• 1. Introduction
• 2. Strained Si Technology
  • 2.1 Substrate Strain
    • 2.1.1 Strained Si on SOI
  • 2.2 Process-Induced Strain
    • 2.2.1 Stress Liners
    • 2.2.2 STI Stress
    • 2.2.3 Heteroepitaxial Strain
  • 2.3 External Mechanical and Package Strain
  • 2.4 Recent Developments
  
  
• 3. Strain Effects on the Electronic Band Structure
  • 3.1 Theory of Elasticity
    • 3.1.1 Stress
    • 3.1.2 Strain
    • 3.1.3 Stress-Strain Dependence
    • 3.1.4 Miller Indices
    • 3.1.5 Coordinate Transformation
    • 3.1.6 Strain from Epitaxy
  • 3.2 Structure of Relaxed Si
    • 3.2.1 Band Structure
  • 3.3 Effect of Strain
    • 3.3.1 Strain-induced Energy Splitting
    • 3.3.2 Valence Band Splitting
    • 3.3.3 Different Stress Configurations
    • 3.3.4 Stress-induced Degeneracy Lifting
  
  
• 4. Mobility Modeling
  • 4.1 Semiconductor Device Equations
    • 4.1.1 Maxwell's Equations
    • 4.1.2 Transport Equations and Mobility
    • 4.1.3 Current Density
    • 4.1.4 Basic MOS Equations
  • 4.2 Modeling Approaches
    • 4.2.1 Monte Carlo Method
  • 4.3 Bulk Mobility of Strained Si
    • 4.3.1 Piezoresistance Model
    • 4.3.2 Physically Based Mobility Model for Strained Si
    • 4.3.3 Doping Dependence
    • 4.3.4 Mobility under Shear Stress
  • 4.4 Bulk Mobility of Strained Ge
  • 4.5 Inversion Layer Mobility
    • 4.5.1 Universal Mobility
    • 4.5.2 Semi-Empirical Modeling
  • 4.6 High-Field Mobility
    • 4.6.1 Analytical High Field Velocity Model
    • 4.6.2 Parallel Velocity Model
    • 4.6.3 Perpendicular Velocity Model
    • 4.6.4 Total Velocity for Arbitrary Field Direction
    • 4.6.5 Simplification to Two-Dimensional Simulation Domains
    • 4.6.6 Implementation Issues
    • 4.6.7 Discussion
  • 4.7 The Onion Model
  
  
• 5. Results
  • 5.1 Low-Field Mobility Modeling Results
    • 5.1.1 Doping Dependence
    • 5.1.2 Strained Ge
  • 5.2 High-Field Electron Transport in Strained Si
    • 5.2.1 Analytical High Field Velocity Model
    • 5.2.2 Total Velocity for Arbitrary Field Direction
  • 5.3 Device Simulation
    • 5.3.1 Effective Mobility
    • 5.3.2 The dotFET Structure
  
  
• 6. Summary and Conclusions
• Bibliography