List of Figures

• 2.1. Fundamental types of uniaxial instabilities of centrosymmetric crystals (after Lines and Glass [LG96])
• 2.2. Fundamental types of biaxial instabilities of centrosymmetric crystals (after Lines and Glass [LG96])
• 2.3. Lattice structure of a symmetric perovskite crystal
• 2.4. Polarization of a tetragonally distorted crystal
• 2.5. Tetragonally distorted crystal
• 2.6. Potential distribution in the direction of the spontaneous polarization
• 2.7. Rhombohedrally distorted crystal
• 2.8. Monoclinicly distorted crystal
• 2.9. Hysteresis loop
• 2.10. Structural model of a $180^\circ$ and a $90^\circ$ domain wall
• 2.11. Head to head domain wall
• 2.12. Scheme of a zigzagged domain wall
• 2.13. Periodic domain structure
• 3.1. Parallelogram shaped hysteresis
• 3.2. SPICE based compact model with parallelogram shaped hysteresis
• 3.3. Hysteresis loop for an individual particle
• 3.4. Polarization density function $F(E_d,E_u)$
• 3.5. Preisach-Everett diagram, increasing electric field
• 3.6. Hysteresis loop, increasing electric field
• 3.7. Preisach-Everett diagram, turning point
• 3.8. Resulting hysteresis loop for a single turning point
• 3.9. Preisach-Everett diagram after two turning points
• 3.10. Preisach-Everett diagram, depolarization
• 3.11. Hysteresis loop for depolarization
• 3.12. Minor loop
• 3.13. Memory wipe out
• 3.14. One-dimensional lattice model, atoms in the double minimum potential interact with their neighbors, cyclic boundary condition $p_1=p_{n+1}$
• 3.15. Hysteresis of the free energy model
• 4.1. Comparison of the $\textsf {arctan}$ and the $\textsf {tanh}$ shape function
• 4.2. Location of the center ion, first axis of anisotropy
• 4.3. Location of the center ion, second axis of anisotropy
• 4.4. Application of an electric field orthogonal to the remanent polarization
• 4.5. Construction of the polarization components
• 4.6. Construction of the lag angle
• 4.7. Algorithm for materials with more than one axis of anisotropy
• 4.8. Splitting of the field vectors
• 4.9. Calculation of the initial guess
• 4.10. Calculation of the polarization
• 4.11. Reduction of the orthogonal component
• 4.12. Non-ferroelectric blocking layer
• 5.1. Comparison simulation to measurement, Supplier 1
• 5.2. Comparison simulation to measurement, Supplier 2
• 5.3. Comparison simulation to measurement, coercive field
• 5.4. Algorithm to fit the parameters
• 5.5. Coercive voltage as a function of frequency and peak voltage
• 5.6. Signal response as function of frequency, sinusoidal pulse
• 5.7. Signal response as function of frequency, triangular pulse
• 5.8. Signal response as function of amplitude, sinusoidal input with 1MHz
• 5.9. Charge and current response of a voltage step
• 5.10. Charge and current response of a transient simulation
• 5.11. Sawyer-Tower circuit
• 5.12. Equivalent circuit diagram
• 5.13. Initial oscillations of the Sawyer-Tower circuit for different ratios of the resistors
• 5.14. Distorted output signal
• 6.1. Schematic overview of preprocessing
• 6.2. Control concept
• 6.3. Data flow of preprocessing
• 6.4. Possible locus curves in an operating point
• 6.5. Detection of the change of the electric field, electric field decreases.
• 6.6. Detection of the change of the electric field, electric field increases.
• 6.7. Modified trivial iteration scheme
• 6.8. Data flow of the numerical calculation
• 6.9. Overview of postprocessing
• 6.10. Data flow of postprocessing
• 7.1. Overview of the different ferroelectric memory designs
• 7.2. Cross section of a stacked transistor-capacitor structure
• 7.3. 2C2T circuit
• 7.4. Sense scheme of a 2C2T circuit
• 7.5. 1C1T circuit
• 7.6. Sensing scheme of the write operation of the 1C1T circuit
• 7.7. Approximation of the hysteresis loop with capacitors
• 7.8. Timing diagram of the read operation of the 1C1T circuit
• 7.9. Ferroelectric non-volatile memory field effect transistor
• 7.10. ON state of the FEMFET
• 7.11. OFF state of the FEMFET
• 8.1. Cross section of a finger structure and the simulated area
• 8.2. 'One-dimensional' capacitor versus finger structure
• 8.3. Polarization reversal near the edge of the contact
• 8.4. Comparison of the transfer characteristics of a finger structure and the 'one-dimensional' capacitor with fitted hysteresis parameters
• 8.5. Definition of the angle $\alpha$ of the axis of anisotropy
• 8.6. Hysteresis curves for different angles of the anisotropy axis
• 8.7. Distribution of the polarization field, angle = $45^\circ$
• 8.8. Distribution of the electric field, angle = $45^\circ$
• 8.9. Distribution of the potential, angle = $45^\circ$
• 8.10. Hysteresis curves for different angles of the anisotropy axes; two perpendicular anisotropy axes are applied
• 8.11. Total polarization in a device with two anisotropy axes
• 8.12. Polarization in the first anisotropy direction, angle = $15^\circ$
• 8.13. Polarization in the second anisotropy direction, angle = $75^\circ$
• 8.14. Geometry of the gate area
• 8.15. Acceptor doping distribution of NMOS and FEMFET
• 8.16. Donor doping distribution of NMOS and FEMFET
• 8.17. Transfer characteristics for different peak voltages, linear scale
• 8.18. Transfer characteristics for different peak voltage, logarithmic scale
• 8.19. Space charge density in the ON state
• 8.20. Current density in the ON state
• 8.21. Space charge density in the OFF state
• 8.22. Current density in the OFF state