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8.3.2 Field and Charge Distribution

Using the new simulator allows to take a closer look at the properties inside the device and verify the operating principle outlined in Section 7.2.1.

The gate voltage used for sensing was set to $V_\mathrm{g}=0V$. The applied peak values of the gate voltage pulses were $V_g=\pm1\mathrm{V}$. Fig. 8.19 and Fig. 8.21 show the space charge density and the current density in the ON state, Fig. 8.21 and Fig. 8.22 in the OFF state.

Figure 8.19: Space charge density in the ON state
\resizebox{\fulllength}{!}{
\includegraphics[width=\fulllength]{charge_on_mod.eps}
}

Figure 8.20: Current density in the ON state
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\includegraphics[width=\fulllength]{current_on_mod.eps}
}

Figure 8.21: Space charge density in the OFF state
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\includegraphics[width=\fulllength]{charge_off_mod.eps}
}

Figure 8.22: Current density in the OFF state
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\includegraphics[width=\fulllength]{current_off_mod.eps}
}


next up previous contents
Next: 8.3.3 Discussion Up: 8.3 Analysis of a Previous: 8.3.1 Transfer Characteristics   Contents
Klaus Dragosits
2001-02-27