Practical computations have shown that, on average, the additional energy introduced per scattering event lies in the order of 10-10eV, when using a coherence length of 100nm. This equates to about 2 - 3meV over 100ps using scattering rates for silicon at room temperature. This error will increase for coarser k-grids (shorter coherence lengths). Nonetheless, the error can be considered negligible for typical simulation times, which do not surpass a few picoseconds.