Publications

[P13]

P. Fleischmann, R. Kosik, B. Haindl, and S. Selberherr.
Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements.
In 8th International Meshing Roundtable, pages 241-246, South Lake Tahoe, California, 1999. Sandia National Labs.

[P12]

P. Fleischmann, W. Pyka, and S. Selberherr.
Mesh Generation for Application in Technology CAD.
IEICE Trans.Electron., E82-C(6):937-947, 1999.

[P11]

W. Pyka, P. Fleischmann, B. Haindl, and S. Selberherr.
Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation.
IEEE Trans.Computer-Aided Design, 1999.
accepted for publication.

[P10]

P. Fleischmann, B. Haindl, R. Kosik, and S. Selberherr.
Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation.
In International Conference on Simulation of Semiconductor Processes and Devices, pages 71-74, Kyoto, Japan, 1999. Business Center for Academic Societies Japan.

[P9]

W. Pyka, P. Fleischmann, B. Haindl, and S. Selberherr.
Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics.
In International Conference on Simulation of Semiconductor Processes and Devices, pages 199-202, Kyoto, Japan, 1999. Business Center for Academic Societies Japan.

[P8]

B. Haindl, R. Kosik, P. Fleischmann, and S. Selberherr.
Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS.
In International Conference on Simulation of Semiconductor Processes and Devices, pages 131-134, Kyoto, Japan, 1999. Business Center for Academic Societies Japan.

[P7]

P. Fleischmann and S. Selberherr.
Three-Dimensional Delaunay Triangulation Constrained to Boundaries by a Modified Advancing Front Algorithm.
IEEE Trans.Computer-Aided Design.
submitted December 1998.

[P6]

P. Fleischmann, E. Leitner, and S. Selberherr.
Optimized Geometry Preprocessing for Three-Dimensional Semiconductor Process Simulation.
In IASTED Int. Conf. on Applied Modelling and Simulation, pages 317-321, Honolulu, Hawaii, USA, August 1998.

[P5]

P. Fleischmann and S. Selberherr.
Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach.
In 6th International Meshing Roundtable, pages 267-276, Park City, Utah, 1997. Sandia National Labs.

[P4]

P. Fleischmann and S. Selberherr.
Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD.
IEEE J.Technology Computer Aided Design, August 1997.

http://www.ieee.org/journal/tcad/accepted/fleischmann-aug97/.

[P3]

P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, and S. Selberherr.
Grid Generation for Three Dimensional Process and Device Simulation.
In International Conference on Simulation of Semiconductor Processes and Devices, pages 161-166, Tokyo, Japan, 1996. Business Center for Academic Societies Japan.

[P2]

P. Fleischmann and S. Selberherr.
A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality.
In International Conference on Simulation of Semiconductor Processes and Devices, pages 129-130, Tokyo, Japan, 1996. Business Center for Academic Societies Japan.

[P1]

E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, and S. Selberherr.
3D TCAD at TU Vienna.
In J. Lorenz, editor, 3-Dimensional Process Simulation, pages 136-161, Wien, 1995. Springer.

Curriculum Vitae

PETER A. FLEISCHMANN

GOLDSCHLAGSTRASSE 78/22
A-1150 VIENNA, AUSTRIA/EUROPE
TEL: +43-1-9855344, +43-664-3262390, FAX: +43-1-8765207

fleischmann@iue.tuwien.ac.at

December 1994 to date

Ph.D. studies under the supervision of Prof. Siegfried Selberherr at the Institute for Microelectronics, Technical University Vienna, Austria.

December 1997

Internship at NEC Corp., Silicon Systems Research Labs., Sagamihara - Kanagawa, Japan. Setup of a parallel simulation environment including porting of a TCAD framework to NEC proprietary workstations (EWS-UX).

July 1992 - October 1994

M.S. studies with specialization in Communications and Radio-Frequency Engineering at the Technical University Vienna, Austria. Diplom-Ingenieur in Electrical Engineering conferred on October 14, 1994 with honors. (Thesis deals with Voronoi diagrams)

September 1993

Work for the ECANSE project, a C++ based graphical user environment for computer-aided neural software engineering, Program and System development - PSE, Siemens AG, Austria.

October 1987 - June 1992

B.S. in Electrical Engineering, Technical University Vienna, Austria (with honors).

July 1988

Installation and maintenance of electrical power supply systems, Elsont CO.KG., Vienna, Austria

1979 - 1987

High school/college: Bundesrealgymnasium XIII,
Wenzgasse - 1130 Vienna, scientific branch. Matura June 1987 (A-Levels, with honors)

1975 - 1979

Elementary/primary school: Volksschule Am Platz - 1130 Vienna

June 1, 1969

born to Austrian parents in Kabul, Afghanistan