4. Implementation

FOR A RIGOROUS STUDY of tunneling effects in modern semiconductor devices it is mandatory to consider arbitrary device geometries, which is only possible using a general-purpose device simulator. This chapter describes the implementation of the outlined tunneling models into the device simulator MINIMOS-NT. First, a brief description of MINIMOS-NT is given. Then, the discretization of the tunneling current density in dielectrics is described, covering tunneling through single segments and stacked segments and followed by the trap-assisted tunneling interface. Finally, the developed closed- and open-boundary SCHRÖDINGER solver is briefly explained.

Subsections

• 4.1 The Device Simulator MINIMOS-NT
• 4.2 The Tunneling Model
  • 4.2.1 Single Segment Tunneling
  • 4.2.2 Stacked Segment Tunneling
  • 4.2.3 Trap-Assisted Tunneling
  
  
• 4.3 The SCHRÖDINGER Solver
  • 4.3.1 Open and Closed Boundary conditions
  • 4.3.2 System HAMILTONian
  • 4.3.3 The Eigenvalue Solver

A. Gehring: Simulation of Tunneling in Semiconductor Devices