Contents

• List of Figures
• 1. Introduction and Overview
• 2. Semiconductor Equations
  • 2.1 MAXWELL's Equations
    • 2.1.1 POISSON's Equation
  • 2.2 Phenomenological Approach
    • 2.2.1 Balance Equations
    • 2.2.2 Drift-Diffusion Transport Model
    • 2.2.3 Carrier Continuity Equations
  • 2.3 Systematic Approach
    • 2.3.1 BOLTZMANN's Transport Equation
    • 2.3.2 Moments Method
    • 2.3.3 Closure
    • 2.3.4 Generation/Recombination Processes
  
  
• 3. Discretization
  • 3.1 Grid Generation
  • 3.2 Finite Difference Method
    • 3.2.1 One-Dimensional TAYLOR Expansion
    • 3.2.2 One-Dimensional POISSON's Equation
    • 3.2.3 Final Remarks
  • 3.3 Box Integration Method
    • 3.3.1 POISSON's Equation
    • 3.3.2 Six Moments Transport Model
    • 3.3.3 Final Remarks
  
  
• 4. Standard Energy Transport Simulations
  • 4.1 Devices Used
  • 4.2 Body and Bipolar Effect
  • 4.3 Anomalous Output Characteristic
  • 4.4 Body Contact
  • 4.5 Cause of the Effect
  • 4.6 Transient Behavior
  • 4.7 Doping Dependence
  • 4.8 Impact-Ionization
  
  
• 5. Modified Energy Transport Model
  • 5.1 Monte Carlo Simulations
    • 5.1.1 Anisotropic Distribution Function
    • 5.1.2 Non-MAXWELLian Closure
  • 5.2 Model Derivation
    • 5.2.1 Anisotropic Distribution Function
    • 5.2.2 Non-MAXWELLian Closure
  • 5.3 Combining the Modifications
  
  
• 6. Modeling and Application
  • 6.1 Temperature Tensor Modeling
  • 6.2 Closure Relation Modeling
    • 6.2.1 Six Moments Transport Model
    • 6.2.2 Bulk Case
    • 6.2.3 Inhomogeneous Case
  • 6.3 Summarizing the Models
  • 6.4 Using the Modified Energy Transport Model
  • 6.5 "Well-Tempered" SOI MOSFET
  • 6.6 Grid Matters
  
  
• 7. Summary and Conclusion
• A. Vector and Tensor Notation
• B. Driving Force Discretization
• Bibliography
• Own Publications

M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF