Own Publications

G12

M. Gritsch, H. Kosina, T. Grasser, and S. Selberherr.
Revision of the Standard Hydrodynamic Transport Model for SOI Simulation.
IEEE Trans. Electron Devices, vol. 49, no. 10, pages 1814-1820, October 2002.
PDF

G11

M. Gritsch, H. Kosina, T. Grasser, and S. Selberherr.
Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model.
In Proc. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002), pages 195-198, Kobe, Japan, September 2002.
PDF, Poster

G10

M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, and M.D. Giles.
The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision.
In Proc. 5th Intl. Conf. on Modeling and Simulation of Microsystems (MSM 2002), pages 544-547, San Juan, Puerto Rico, April 2002.
PDF

G9

H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M.D. Giles, and S. Selberherr.
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs.
J.Comp.Electron., vol. 1, no. 2, 2002.
(In print).
PDF

G8

M. Gritsch, H. Kosina, T. Grasser, and S.Selberherr.
Simulation of partially depleted SOI MOSFETs using an improved hydrodynamic transport model.
In Proc. Physics of Semiconductor Devices (IWPSD 2001), pages 664-667, New Delhi, India, December 2001.
PDF

G7

H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M.D. Giles, and S. Selberherr.
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs.
In Proc. 8th Intl. Workshop on Computational Electronics, (IWCE-8), Urbana, Illinois, October 2001. Beckman Institute.
PDF, Poster

G6

T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr.
Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population.
In H. Ryssel, G. Wachutka, and H. Grünbacher, editors, Proc. 31th European Solid-State Device Research Conference, pages 215-218, Nuremberg, Germany, September 2001. Frontier Group.
PDF

G5

T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr.
Using Six Moments of Boltzmann's Transport Equation for Device Simulation.
J. Appl. Phys., vol. 90, no. 5, pages 2389-2396, September 2001.
PDF

G4

T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr.
A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation.
In Proc. 4th Intl. Conf. on Modeling and Simulation of Microsystems (MSM 2001), pages 474-477, Hilton Head Island, South Carolina, USA, March 2001.
PDF

G3

M. Gritsch, H. Kosina, T. Grasser, and S. Selberherr.
Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs.
Solid-State Electron., vol. 45, no. 4, pages 621-627, 2001.
PDF, online

G2

M. Gritsch, H. Kosina, T. Grasser, and S.Selberherr.
A Simulation Study of Partially Depleted SOI MOSFETs.
In Proc. Silicon-On-Insulator Technology and Devices X (ECSSOI 2001), pages 181-186, Washington DC, USA, March 2001.
PDF

G1

M. Gritsch, H. Kosina, C. Fischer, and S. Selberherr.
Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs.
In Proc. European Meeting on Silicon on Insulator Devices (EUROSOI 2000), Granada, Spain, October 2000.
PDF

Table 1: Publication Statistics

	Author	Co-Author	Total
Journals	2	2	4
Conferences	5	3	8
Total	7	5	12

M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF