Hole emission also occurs at the rising edge 
of the gate pulse.
(1) For a weak electron capture at the top level this effect is important
when the rise time cannot be neglected in comparison with the top-level
duration. In this case 
should be computed
by 3.61 with 
replaced by 
.
(2) For a strong electron capture at the top level, the hole emission at the
rising edge increases the bottom boundary
as determined by 3.60,
thus reducing the energy interval available for the electron capture.
As a consequence, the charge-pumping current is reduced in both cases. We
assume that the non-steady-state hole emission starts at the gate bias
and ends at the level 
when the electron capture becomes
dominant. The voltage can be calculated in an equivalent way as
is done for 
at the falling edge.
After [154][97] the hole emission level in the step approximation of
the non-steady-state occupancy function is given by
where 
is the time for the hole non-steady-state emission.
is the emission level at the transition between the
steady-state and the non-steady-state hole emission mode.
Expression 3.81 reduces to
where 
is the hole capture time constant associated with the
level at the onset of the non-steady-state emission. The hole emission level
lies above , but close to it for short
emission times and/or long . If the interface goes
into strong accumulation at the gate bottom level,
holds and the second term in the brackets at
the right-hand-side in 3.81 becomes negligible. This case is
shown in Figure 3.5.
The time and the onset level for the non-steady-state hole emission at the rising edge of the gate pulse are given by expressions equivalent with 3.68, 3.77 and 3.78:
The transition level 
is the solution of the equation
where 
. The sign 
holds for
and 
for 
. Since the
right-hand-side in 3.88 is a contraction, a linear iteration
scheme can be employed. The expression for the calculation of the onset voltage
follows evidently and is omitted here.
The variations of with the rising time has also been presented
in [97].
